Patents by Inventor Chul Yoo

Chul Yoo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8637917
    Abstract: An insulating pattern is disposed on a surface of a semiconductor substrate and includes a silicon oxynitride film. A conductive pattern is disposed on the insulating pattern. A data storage pattern and a vertical channel pattern are disposed within a channel hole formed to vertically penetrate the insulating pattern and the conductive pattern. The data storage pattern and the vertical channel pattern are conformally stacked along sidewalls of the insulating pattern and the conductive pattern. A concave portion is formed in the semiconductor substrate adjacent to the insulating pattern. The concave portion is recessed relative to a bottom surface of the insulating pattern.
    Type: Grant
    Filed: August 12, 2011
    Date of Patent: January 28, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ju-Yul Lee, Han-Mei Choi, Dong-Chul Yoo, Young-Jong Je, Ki-Hyun Hwang
  • Patent number: 8605821
    Abstract: An apparatus and method for scrambling in a wireless communication system are provided. The apparatus includes a selector, a plurality of scramblers, and a plurality of modulators. The selector selects a scrambling scheme to be applied to a transmission bit stream according to a modulation scheme to be applied to the transmission bit stream. The plurality of scramblers scramble the transmission bit stream according to a scrambling scheme corresponding to each of a plurality of modulation schemes. The plurality of modulators modulate the scrambled transmission bit stream according to the plurality of modulation schemes.
    Type: Grant
    Filed: September 3, 2009
    Date of Patent: December 10, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-Chul Yoo, Bo-Rham Lee, Yun-Ju Kwon, Dong-Min Kim
  • Publication number: 20130231869
    Abstract: The present invention provides an apparatus for screening cancer, which reads low-mass ion mass spectrum for diagnosing cancer based on biostatistical analysis with respect to low-mass ions extracted from biological materials, and diagnoses cancer using the low-mass ion spectrum. An apparatus for cancer diagnosis, including a low-mass ion detecting unit which detects mass spectra of low-mass ions of biological materials; a cancer diagnosing unit which compares and analyzes patterns of mass spectra and diagnoses cancer; a display unit which displays cancer diagnosis information from the cancer diagnosing unit.
    Type: Application
    Filed: November 30, 2012
    Publication date: September 5, 2013
    Applicant: NATIONAL CANCER CENTER
    Inventors: Byong Chul YOO, Kyung Hee KIM, Dae Yong KIM, In Hoo KIM, Ji Won PARK, Jae Hwan OH, Jun Hwa LEE, Eun Sook LEE
  • Publication number: 20130206977
    Abstract: The present invention provides a method for crystallizing low mass ions for diagnosing colorectal cancer by using a MALDI-TOF mass spectrometer to biostatistically analyze low mass ions, which are extracted from a biological sample, and a method for providing information for diagnosing colorectal cancer using same. The present inventions can provide a diagnostic method, which requires low cost and a short time for analysis, can analyze large areas, and which can provide superior and credible discriminations.
    Type: Application
    Filed: August 12, 2011
    Publication date: August 15, 2013
    Applicant: NATIONAL CANCER CENTER
    Inventors: Byong Chul Yoo, In Hoo Kim, Kyung Hee Kim, Jun Hwa Lee, Kwang Gi Kim, Hee Jin Chang, Dae Yong Kim, Jae Hwan Oh, Byung Chang Kim, Ji Won PARK, Sun Young Kim
  • Patent number: 8497142
    Abstract: Methods of forming conductive patterns include forming a conductive layer including a metal element on a substrate. The conductive layer is partially etched to generate a residue including an oxide of the metal element and to form a plurality of separately formed conductive layer patterns. A cleaning gas is inflowed onto the substrate including the conductive layer pattern. The metal compound is evaporated to remove the metal element contained in the residue and to form an insulating interface layer on the conductive layer pattern and a surface portion of the substrate through a reaction of a portion of the cleaning gas and oxygen. The residue may be removed from the conductive layer pattern to suppress generation of a leakage current.
    Type: Grant
    Filed: May 6, 2011
    Date of Patent: July 30, 2013
    Assignee: SAMSUNG Electronics Co., Ltd.
    Inventors: Jun-Kyu Yang, Young-Geun Park, Ki-Hyun Hwang, Han-Mei Choi, Dong-Chul Yoo
  • Patent number: 8440527
    Abstract: A memory device and a method of fabricating the same are provided. The memory device includes a tunneling dielectric layer on a substrate, a charge storage layer on the tunneling dielectric layer, a blocking dielectric layer on the charge storage layer, the blocking dielectric layer including a first dielectric layer having silicon oxide, a second dielectric layer on the first dielectric layer and having aluminum silicate, and a third dielectric layer formed on the second dielectric layer and having aluminum oxide, and an upper electrode on the blocking dielectric layer.
    Type: Grant
    Filed: March 5, 2010
    Date of Patent: May 14, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Chul Yoo, Eun-Ha Lee, Hyung-Ik Lee, Ki-Hyun Hwang, Sung Heo, Han-Mei Choi, Yong-Koo Kyoung, Byong-Ju Kim
  • Patent number: 8432855
    Abstract: A method for transmitting data using a hybrid automatic repeat request (HARQ) is provided. The method includes receiving scheduling information, the scheduling information comprising information regarding a radio resource; transmitting data by using the radio resource; and retransmitting the data or transmitting new data by reusing the radio resource if a received scheduling change indicator indicates that the radio resource is reused. The scheduling change indicator is control information different from the scheduling information. Resources can be effectively used by decreasing an amount of radio resources required for scheduling information.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: April 30, 2013
    Assignee: LG Electronics Inc.
    Inventor: Hee Chul Yoo
  • Patent number: 8426304
    Abstract: Methods of manufacturing a semiconductor device include forming a stopping layer pattern in a first region of a substrate. A first mold structure is formed in a second region of the substrate that is adjacent the first region. The first mold structure includes first sacrificial patterns and first interlayer patterns stacked alternately. A second mold structure is formed on the first mold structure and the stopping layer pattern. The second mold structure includes second sacrificial patterns and second interlayer patterns stacked alternately. The second mold structure partially covers the stopping layer pattern. A channel pattern is formed and passes through the first mold structure and the second mold structure.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: April 23, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Chul Yoo, Chan-Jin Park, Ki-Hyun Hwang, Han-Mei Choi, Joon-Suk Lee
  • Patent number: 8410542
    Abstract: Nonvolatile memory devices include a tunnel insulating layer on a substrate and a charge storing layer on the tunnel insulating layer. A charge transfer blocking layer is provided on the charge storing layer. The charge transfer blocking layer is formed as a composite of multiple layers, which include a first oxide layer having a thickness of about 1 ? to about 10 ?. This first oxide layer is formed directly on the charge storing layer. The charge transfer blocking layer includes a first dielectric layer on the first oxide layer. The charge transfer blocking layer also includes a second oxide layer on the first dielectric layer and a second dielectric layer on the second oxide layer. The first and second dielectric layers have a higher dielectric constant relative to the first and second oxide layers, respectively. The memory cell includes an electrically conductive electrode on the charge transfer blocking layer.
    Type: Grant
    Filed: November 2, 2010
    Date of Patent: April 2, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Chul Yoo, Byong-Ju Kim, Han-Mei Choi, Ki-Hyun Hwang
  • Publication number: 20130065266
    Abstract: The present invention relates to a disease diagnosis method, a marker screening method, and a marker using a time-of-flight secondary ion mass spectrometry (TOF-SIMS), and more particularly, to a large intestine cancer diagnosis method, a large intestine cancer marker screening method, and a large intestine cancer marker using a time-of-flight secondary ion mass spectrometry (TOF-SIMS). Specifically, the present invention provides a method diagnosing a disease using a pattern of secondary ion mass (m/z) peaks of biological samples measured using a time-of-flight secondary ion mass spectrometry (TOF-SIMS) as a marker, a marker screening method being a reference judging an existence or non-existence of a disease, and a marker configured of specific secondary ion mass peaks.
    Type: Application
    Filed: August 9, 2012
    Publication date: March 14, 2013
    Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
    Inventors: Tae Geol Lee, Dae Won Moon, Byong Chul Yoo, In Hoo Kim
  • Publication number: 20130051574
    Abstract: A method of removing a microphone noise and a portable terminal supporting the same are provided. The portable terminal supporting removal of a microphone noise includes a microphone for collecting an audio signal, a controller for processing the audio signal collected by the microphone, a microphone signal line for transferring a microphone signal collected by the microphone to the controller, and a noise collecting circuit disposed at a neighboring region of the microphone signal line for collecting and providing a noise signal similar to a noise induced in the microphone signal line to the controller, wherein the controller controls such that the noise induced in the microphone signal line is removed based on the noise signal collected by the noise collecting circuit.
    Type: Application
    Filed: July 5, 2012
    Publication date: February 28, 2013
    Applicant: SAMSUNG ELECTRONICS CO. LTD.
    Inventor: Chul YOO
  • Patent number: 8308467
    Abstract: Provided is a parallelism control apparatus of a movable platen of an electric injection molding machine, to which a new arrangement type using a wedge to control the parallelism of a movable platen is applied to reduce the size of the parallelism control apparatus, ensure an installation space, and solve a difficulty during installation, which ensures rigidity of the movable platen in directions of forward and rearward movements, and enables parallelism adjustment and firm position fixing by controlling a vertical amount, a horizontal amount, and a combination of vertical and horizontal amounts even in a narrow space, thereby further enhancing precision and quality reliability of molded products.
    Type: Grant
    Filed: August 2, 2011
    Date of Patent: November 13, 2012
    Assignee: LS Mtron Ltd.
    Inventors: Jin Won Jung, Kyong Ho Park, Sung Chul Yoo
  • Publication number: 20120276696
    Abstract: A vertical structure non-volatile memory device in which a gate dielectric layer is prevented from protruding toward a substrate; a resistance of a ground selection line (GSL) electrode is reduced so that the non-volatile memory device is highly integrated and has improved reliability, and a method of manufacturing the same are provided. The method includes: sequentially forming a polysilicon layer and an insulating layer on a silicon substrate; forming a gate dielectric layer and a channel layer through the polysilicon layer and the insulating layer, the gate dielectric layer and the channel layer extending in a direction perpendicular to the silicon substrate; forming an opening for exposing the silicon substrate, through the insulating layer and the polysilicon layer; removing the polysilicon layer exposed through the opening, by using a halogen-containing reaction gas at a predetermined temperature; and filling a metallic layer in the space formed by removing the polysilicon layer.
    Type: Application
    Filed: April 26, 2012
    Publication date: November 1, 2012
    Inventors: Jun-Kyu Yang, Ki-Hyun Hwang, Phil-Ouk Nam, Jae-Young Ahn, Han-Mei Choi, Dong-Chul Yoo
  • Patent number: 8294198
    Abstract: A semiconductor integrated circuit device is provided. The semiconductor integrated circuit device includes a plurality of isolation regions which are formed within a semiconductor substrate and define active regions. A tunnel layer and a trap seed layer are formed in each of the active regions and are sequentially stacked between the isolation regions. A trap layer is formed on the trap seed layer and protrudes further than a top surface of each of the isolation regions. A blocking layer is formed on the trap layer. A gate electrode is formed on the blocking layer.
    Type: Grant
    Filed: February 11, 2010
    Date of Patent: October 23, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Chul Yoo, Eun-Ha Lee, Byong-Ju Kim, Hyung-Ik Lee, Sung Heo, Han-Mei Choi, Chan-Hee Park, Ki-Hyun Hwang
  • Publication number: 20120258193
    Abstract: Provided is a parallelism control apparatus of a movable platen of an electric injection molding machine, to which a new arrangement type using a wedge to control the parallelism of a movable platen is applied to reduce the size of the parallelism control apparatus, ensure an installation space, and solve a difficulty during installation, which ensures rigidity of the movable platen in directions of forward and rearward movements, and enables parallelism adjustment and firm position fixing by controlling a vertical amount, a horizontal amount, and a combination of vertical and horizontal amounts even in a narrow space, thereby further enhancing precision and quality reliability of molded products.
    Type: Application
    Filed: August 2, 2011
    Publication date: October 11, 2012
    Inventors: Jin Won JUNG, Kyong Ho Park, Sung Chul Yoo
  • Patent number: 8283117
    Abstract: The present invention relates to a disease diagnosis method, a marker screening method, and a marker using a time-of-flight secondary ion mass spectrometry (TOF-SIMS), and more particularly, to a large intestine cancer diagnosis method, a large intestine cancer marker screening method, and a large intestine cancer marker using a time-of-flight secondary ion mass spectrometry (TOF-SIMS). Specifically, the present invention provides a method diagnosing a disease using a pattern of secondary ion mass (m/z) peaks of biological samples measured using a time-of- flight secondary ion mass spectrometry (TOF-SIMS) as a marker, a marker screening method being a reference judging an existence or non-existence of a disease, and a marker configured of specific secondary ion mass peaks.
    Type: Grant
    Filed: June 25, 2008
    Date of Patent: October 9, 2012
    Assignee: Korea Research Institute of Standards and Science
    Inventors: Tae Geol Lee, Dae Won Moon, Byong Chul Yoo, In Hoo Kim
  • Patent number: 8274936
    Abstract: An apparatus and method for uplink transmission in a wireless communication system are provided. The method comprises detecting an expiry of a time alignment timer in a MAC (Medium Access Control) layer, the time alignment timer being used to control how long the UE is considered uplink time aligned, notifying a release of PUCCH (Physical Uplink Control Channel) resources from the MAC layer to a RRC (Radio Resource Control) layer when the expiry of the time alignment timer is detected and keeping a part of the PUCCH (Physical Uplink Control Channel) resources in the RRC layer.
    Type: Grant
    Filed: May 5, 2009
    Date of Patent: September 25, 2012
    Assignee: LG Electronics Inc.
    Inventor: Hee Chul Yoo
  • Patent number: 8205128
    Abstract: An apparatus and a method for Hybrid Automatic Repeat reQuest (HARQ) in a wireless communication system are provided. A receiver includes a Media Access Control (MAC) layer part for error-checking each MAC Packet Data Units (PDUs) extracted from a physical layer burst, and generating HARQ combination control information according to a result of the error check; a receiving part for receiving a retransmit burst; and a combiner for selecting one or more Forward Error Correction (FEC) blocks from the retransmit burst according to the HARQ combination control information, and HARQ-combining the selected one or more FEC blocks.
    Type: Grant
    Filed: October 8, 2008
    Date of Patent: June 19, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-Chul Yoo, Jin-Woo Roh, Bong-Gee Song, Dong-Min Kim, Jung-Ho Lee
  • Publication number: 20120149185
    Abstract: Methods of manufacturing semiconductor devices include forming an integrated structure and a first stopping layer pattern in a first region. A first insulating interlayer and a second stopping layer are formed. A second preliminary insulating interlayer is formed by partially etching the second stopping layer and the first insulating interlayer in the first region. A first polishing is performed to remove a protruding portion. A second polishing is performed to expose the first and second stopping layer patterns.
    Type: Application
    Filed: December 7, 2011
    Publication date: June 14, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyo-Jung Kim, Ki-Hyun Hwang, Kyung-Hyun Kim, Han-Mei Choi, Dong-Chul Yoo, Chan-Jin Park, Jong-Heun Lim, Myung-Jung Pyo, Byoung-Moon Yoon, Chang-Sup Mun
  • Patent number: D675907
    Type: Grant
    Filed: May 18, 2012
    Date of Patent: February 12, 2013
    Assignee: Eugene High-Tech Co., Ltd.
    Inventor: Chul Yoo