Abstract: The invention shows a photosensitive resin composition which can be used in protective film and liquid crystal display element and provides good transparency and high chemical resistance. The composition includes a complex resin (A), an o-naphthoquinone diazide sulfonate (B), and a solvent (C). The complex resin (A) includes a main chain and a side chain. The main chain includes a repeating unit derived from siloxane (meth)acrylate based monomer (a1-2). The side chain includes a repeating unit derived from siloxane based monomer (a2), and is bonded to the repeating unit derived from siloxane (meth)acrylate based monomer (a1-2). The complex resin (A) satisfies at least one of the following conditions (I) and (II): Condition (I): the main chain further includes a repeating unit derived from unsaturated monomer (a1-1) including a carboxylic acid or a carboxylic anhydride. Condition (II): the siloxane based monomer (a2) includes a monomer (a2-1) represented by formula (A-4).

Abstract: The invention relates to a photosensitive polysiloxane composition and a thin film formed by the aforementioned photosensitive polysiloxane composition. The thin film is a planarization film of a TFT substrate, an interlayer insulating film or an overcoat of a core material or a protective material in a waveguide. The invention is to provide a photosensitive polysiloxane composition having excellent surface flatness and high tapered angle of a pattern. The photosensitive polysiloxane composition comprises a polysiloxane (A), an o-naphthoquinone diazide sulfonic acid ester (B), an alkali-soluble resin containing a silyl group (C) and a solvent (D).

Abstract: The invention shows a photosensitive resin composition which can be used in protective film and liquid crystal display element and provides good transparency and high chemical resistance. The composition includes a complex resin (A), an o-naphthoquinone diazide sulfonate (B), and a solvent (C). The complex resin (A) includes a main chain and a side chain. The main chain includes a repeating unit derived from siloxane (meth)acrylate based monomer (a1-2). The side chain includes a repeating unit derived from siloxane based monomer (a2), and is bonded to the repeating unit derived from siloxane (meth)acrylate based monomer (a1-2). The complex resin (A) satisfies at least one of the following conditions (I) and (II): Condition (I): the main chain further includes a repeating unit derived from unsaturated monomer (a1-1) including a carboxylic acid or a carboxylic anhydride. Condition (II): the siloxane based monomer (a2) includes a monomer (a2-1) represented by formula (A-4).

Abstract: The invention relates to a photosensitive polysiloxane composition and a thin film formed by the aforementioned photosensitive polysiloxane composition. The thin film is a planarization film of a TFT substrate, an interlayer insulating film or an overcoat of a core material or a protective material in a waveguide. The invention is to provide a photosensitive polysiloxane composition having excellent surface flatness and high tapered angle of a pattern. The photosensitive polysiloxane composition comprises a polysiloxane (A), an o-naphthoquinone diazide sulfonic acid ester (B), an alkali-soluble resin containing a silyl group (C) and a solvent (D).

Abstract: The present invention relates to a photosensitive resin composition, a protective film and an element having the same. The aforementioned photosensitive resin composition includes a polysiloxane resin (A), an alkali-soluble resin (B), an ortho-naphthoquinone diazide sulfonic acid ester (C) and a solvent (D). The alkali-soluble resin (B) is copolymerized by an unsaturated carboxylic acid or unsaturated carboxylic anhydride compound (b1), a fluorene derivative having a double-bond group (b2) and an unsaturated compound having an acid-decomposable group (b3).

Abstract: A photosensitive composition, a protective film, and an element having the protective film are provided. The photosensitive composition includes a polysiloxane (A), an o-naphthoquinonediazidesulfonate (B), and a solvent (C). The polysiloxane (A) is obtained by polycondensing a mixture, wherein the mixture includes a silane monomer (a-1) represented by formula (1), a silane monomer (a-2) represented by formula (2), and a silicon-containing compound (a-3). The silicon-containing compound (a-3) is selected from the group consisting of a silane monomer represented by formula (3), a siloxane prepolymer, and a silica particle. The photosensitive composition can be made into a protective film with excellent chemical resistance.

Abstract: A photosensitive polysiloxane composition having good adhesion during development, a protective film, and an element having the protective film are provided. The photosensitive polysiloxane composition includes a polysiloxane (A), an o-naphthoquinonediazidesulfonate (B), and a solvent (C). The polysiloxane (A) is obtained via the polycondensation of a monomer component, wherein the monomer component includes a titanium-containing compound (a-1) and a silane monomer (a-2) represented by formula (2). The titanium-containing compound (a-1) is selected from the group consisting of a compound represented by formula (1-1) and a hydrolyzable titanium dimer.

Abstract: A positive photosensitive resin composition, a pattern forming method, a thin film transistor array substrate, and a liquid crystal display device are provided. The positive photosensitive resin includes a novolac resin (A), an alkali-soluble resin (B), an ester (C) of an o-naphthoquinone diazide sulfonic acid, and a solvent (D). The alkali-soluble resin (B) includes a first alkali-soluble resin (B-1) produced by polymerizing a mixture. The mixture includes an epoxy compound (i) and a compound (ii), wherein the epoxy compound (i) has at least two epoxy groups, and the compound (ii) has at least one carboxylic acid group and at least one ethylenically unsaturated group.

Abstract: The present invention relates to a photosensitive resin composition, a protective film and an element having the same. The aforementioned photosensitive resin composition includes an alkali-soluble resin (A), an ortho-naphthoquinone diazide sulfonic acid ester (B) and a solvent (C). The alkali-soluble resin (A) is copolymerized by an unsaturated carboxylic acid or unsaturated carboxylic anhydride compound (a1), a fluorene derivative having a double-bond group (a2) and an unsaturated compound having an acid-decomposable group (a3).

Abstract: The present invention relates to a positive photosensitive resin composition and a method for forming a pattern by using the same. The positive photosensitive resin composition includes a novolac resin (A), a polysiloxane (B), an ortho-naphthoquinone diazide sulfonic acid ester (C) and a solvent (D). The novolac resin (A) includes a xylenol-type novolac resin (A-1). The xylenol-type novolac resin (A-1) is synthesized by polycondensing an aldehyde compound with a xylenol compound.

Abstract: A photosensitive polysiloxane composition, a protecting film and an element having the protecting film are provided. The photosensitive polysiloxane composition includes a polysiloxane (A), an o-naphthoquinonediazidesulfonate (B), a silane compound (C) containing an amic acid group and a solvent (D). When the photosensitive polysiloxane composition is used for forming a protecting film, the protecting film shows favorable cross-section shape and heat resistance.

Abstract: A photosensitive polysiloxane composition having good developing properties and good operational reliability of development, a protective film, and an element having the protective film are provided. The photosensitive polysiloxane composition includes an alkali-soluble resin (A), a compound (B) having an ethylenically unsaturated group, a photoinitiator (C), and a solvent (D). The alkali-soluble resin (A) includes a polysiloxane (A-1). The compound (B) having an ethylenically unsaturated group includes a compound (B-1) having an ethylenically unsaturated group, wherein the compound (B-1) having an ethylenically unsaturated group includes at least one of a (meth)acrylate monomer represented by formula (1) and a (meth)acrylate monomer represented by formula (2).

Abstract: The present invention relates to a photosensitive resin composition for a black matrix and an application thereof. The aforementioned photosensitive resin composition includes an alkali-soluble resin (A), a compound having an ethylenically unsaturated group (B), a photo-initiator (C), a solvent (D), a black pigment (E) and an oxetane compound having silicon atom (F). The aforementioned alkali-soluble resin (A) includes a first alkali-soluble resin (A-1) having a fluorine atom. The photosensitive resin composition for the black matrix has excellent development resistance and lower surface resistance.

Abstract: The present invention relates to a photosensitive resin composition, a protective film and an element having the same. The aforementioned photosensitive resin composition includes a polysiloxane resin (A), an alkali-soluble resin (B), an ortho-naphthoquinone diazide sulfonic acid ester (C) and a solvent (D). The alkali-soluble resin (B) is copolymerized by an unsaturated carboxylic acid or unsaturated carboxylic anhydride compound (b2), a fluorene derivative having a double-bond group (b2) and an unsaturated compound having an acid-decomposable group (b3).

Abstract: The present invention relates to a photosensitive resin composition, a protective film and an element having the same. The aforementioned photosensitive resin composition includes an alkali-soluble resin (A), an ortho-naphthoquinone diazide sulfonic acid ester (B) and a solvent (C). The alkali-soluble resin (A) is copolymerized by an unsaturated carboxylic acid or unsaturated carboxylic anhydride compound (a1), a fluorene derivative having a double-bond group (a2) and an unsaturated compound having an acid-decomposable group (a3).

Abstract: A photosensitive polysiloxane composition including a nitrogen-containing heterocyclic compound (A), a polysiloxane (B), an o-naphthoquinone diazide sulfonate (C), and a solvent (D) is provided.

Abstract: The present invention relates to a positive photosensitive resin composition and a method for forming patterns by using the same. The positive photosensitive resin composition includes a novolac resin (A), an ortho-naphthoquinone diazide sulfonic acid ester (B), a dye (C) and a solvent (D). The novolac resin (A) further includes hydroxy-type novolac resin (A-1), which is synthesized by condensing hydroxylbenzaldehyde compound with aromatic hydroxyl compound. The dye (C) includes at least one (C-1) selected from the group consisting of diazo dye, anthraquinone dye and chromium (III, Cr3+) azo dye, as well as triarylmethane dye (C-2). Since the positive photosensitive resin composition can form colorfully fine patterns on metal circuits, and such patterns are not decolored after being etched, thereby beneficially blocking the reflected light of the metal circuits.

Abstract: The invention relates to a positive photosensitive resin composition without color off after etching. The invention also provides a method for manufacturing a thin-film transistor array substrate, a thin-film transistor array substrate and a liquid crystal display device.

Abstract: A photosensitive composition, a protective film, and an element having the protective film are provided. The photosensitive composition includes a polysiloxane (A), an o-naphthoquinonediazidesulfonate (B), and a solvent (C). The polysiloxane (A) is obtained by polycondensing a mixture, wherein the mixture includes a silane monomer (a-1) represented by formula (1), a silane monomer (a-2) represented by formula (2), and a silicon-containing compound (a-3). The silicon-containing compound (a-3) is selected from the group consisting of a silane monomer represented by formula (3), a siloxane prepolymer, and a silica particle. The photosensitive composition can be made into a protective film with excellent chemical resistance.

Abstract: The invention relates to a photosensitive polysiloxane composition and a thin film formed by the aforementioned photosensitive polysiloxane composition. The thin film is a planarization film of a TFT substrate, an interlayer insulating film or an overcoat of a core material or a protective material in a waveguide. The thin film is cured at low temperature. The photosensitive polysiloxane composition comprises a polysiloxane (A), an o-naphthoquinone diazide sulfonic acid ester (B), a thermal base generator (C) and a solvent (D).