Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

Abstract: A temperature monitor system for semiconductor substrates in a front opening unified pod (FOUP) includes a temperature detector and a programmable controller. The temperature detector is in the FOUP and configured to obtain temperature data of semiconductor substrates. The programmable controller is coupled to the temperature detector and configured to control operation of the temperature detector.

Abstract: A method of making a semiconductor device includes plating a first conductive material over a first passivation layer, wherein the first conductive material fills an opening in the first passivation layer and electrically connects to an interconnect structure. The method further includes planarizing the first conductive material, wherein a top surface of the planarized first conductive material is coplanar with a top surface of the first passivation layer. The method further includes depositing a second conductive material over the first passivation layer, wherein the second conductive material is different from the first conductive material, and the second conductive material is electrically connected to the first conductive material in the opening. The method further includes patterning the second conductive material to define a redistribution line (RDL).

Abstract: A semiconductor device includes a first passivation layer over an interconnect structure. The semiconductor device further includes a first redistribution line (RDL) via extending through an opening in the first passivation layer to electrically connect to the interconnect structure. The first RDL via includes a first conductive material. The semiconductor device further includes an RDL over the first passivation layer and electrically connected to the first RDL via. The RDL comprises a second conductive material different from the first conductive material. The RDL extends beyond the first RDL via in a direction parallel to a top surface of the first passivation layer.

Abstract: A method of manufacturing a semiconductor device includes depositing a first passivation layer over a substrate, depositing a conductive material over the first passivation layer, patterning the conductive material to form a redistribution layer (RDL) structure, and depositing a second passivation layer configured to change a shape of a top portion of the RDL structure.

Abstract: A semiconductor device includes a first passivation layer over an interconnect structure. The semiconductor device further includes a first redistribution line (RDL) via extending through an opening in the first passivation layer to electrically connect to the interconnect structure. The first RDL via includes a first conductive material. The semiconductor device further includes an RDL over the first passivation layer and electrically connected to the first RDL via. The RDL comprises a second conductive material different from the first conductive material. The RDL extends beyond the first RDL via in a direction parallel to a top surface of the first passivation layer.

Abstract: A temperature monitor system for semiconductor substrates in a front opening unified pod (FOUP) includes a temperature detector and a programmable controller. The temperature detector is in the FOUP and configured to obtain temperature data of semiconductor substrates. The programmable controller is coupled to the temperature detector and configured to control operation of the temperature detector.

Abstract: The present invention discloses a system for compressing a video, and comprises a capture module, a first analysis module, a clustering module and a compressing module. The system of the present invention can capture a background portion from the video and reserve characteristics such as the moving route or speed of the target object. Based on the non-collision among the objects, the objects existing at different times can be re-synthesized into the same time slice to generate a compressed video with the shortest duration while still retaining the full content of the original video according to the system of the present invention.