Abstract: The present disclosure describes various non-planar semiconductor devices, such as fin field-effect transistors (finFETs) to provide an example, having one or more metal rail conductors and various methods for fabricating these non-planar semiconductor devices. In some situations, the one or more metal rail conductors can be electrically connected to gate, source, and/or drain regions of these various non-planar semiconductor devices. In these situations, the one or more metal rail conductors can be utilized to electrically connect the gate, the source, and/or the drain regions of various non-planar semiconductor devices to other gate, source, and/or drain regions of various non-planar semiconductor devices and/or other semiconductor devices. However, in other situations, the one or more metal rail conductors can be isolated from the gate, the source, and/or the drain regions these various non-planar semiconductor devices.

Abstract: A method includes providing a substrate, a dummy fin, and a stack of semiconductor channel layers; forming an interfacial layer wrapping around each of the semiconductor channel layers; depositing a high-k dielectric layer, wherein a first portion of the high-k dielectric layer over the interfacial layer is spaced away from a second portion of the high-k dielectric layer on sidewalls of the dummy fin by a first distance; depositing a first dielectric layer over the dummy fin and over the semiconductor channel layers, wherein a merge-critical-dimension of the first dielectric layer is greater than the first distance thereby causing the first dielectric layer to be deposited in a space between the dummy fin and a topmost layer of the stack of semiconductor channel layers, thereby providing air gaps between adjacent layers of the stack of semiconductor channel layers and between the dummy fin and the stack of semiconductor channel layers.

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor die and surrounding a sidewall of the semiconductor die with a dielectric material. The method further includes forming a post passivation interconnect (PPI) over the semiconductor die and electrically coupling the PPI with the semiconductor die. The method further includes molding the semiconductor die and the PPI into an integrated semiconductor package. The method further includes covering at least a portion of an outer surface of the integrated semiconductor package with a conductive layer, wherein the conductive layer is conformal to the morphology of the portion of the outer surface. Moreover, the method further includes forming a conductive path inside the integrated semiconductor package electrically coupled to the conductive layer and a ground terminal of the integrated semiconductor package.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a gallium nitride (GaN) layer on a substrate; an aluminum gallium nitride (AlGaN) layer disposed on the GaN layer; a gate stack disposed on the AlGaN layer; a source feature and a drain feature disposed on the AlGaN layer and interposed by the gate stack; a dielectric material layer is disposed on the gate stack; and a field plate disposed on the dielectric material layer and electrically connected to the source feature, wherein the field plate includes a step-wise structure.

Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

Abstract: A method includes forming a first protruding fin and a second protruding fin over a base structure, with a trench located between the first protruding fin and the second protruding fin, depositing a trench-filling material extending into the trench, and performing a laser reflow process on the trench-filling material. In the reflow process, the trench-filling material has a temperature higher than a first melting point of the trench-filling material, and lower than a second melting point of the first protruding fin and the second protruding fin. After the laser reflow process, the trench-filling material is solidified. The method further includes patterning the trench-filling material, with a remaining portion of the trench-filling material forming a part of a gate stack, and forming a source/drain region on a side of the gate stack.

Abstract: An imaging lens system includes a lens element and an aperture element surrounding an imaging optical path and forming an aperture. The aperture element includes a first conical surface, a second conical surface and a contact surface. The first and second conical surfaces surround the imaging optical path. The contact surface is perpendicular to the imaging optical path and contacts the lens element. When the imaging lens system is in a first environment condition, the first conical surface is in contact with the lens element, the second conical surface is spaced apart from the lens element, and the aperture is aligned with the optically effective region. When the imaging lens system is in a second environment condition, the second conical surface is in contact with the lens element, the first conical surface is spaced apart from the lens element, and the aperture is aligned with the optically effective region.

Abstract: A metal-insulator-metal (MIM) structure and methods of forming the same for reducing the accumulation of external stress at the corners of the conductor layers are disclosed herein. An exemplary device includes a substrate that includes an active semiconductor device. A stack of dielectric layers is disposed over the substrate. A lower contact is disposed over the stack of dielectric layers. A passivation layer is disposed over the lower contact. A MIM structure is disposed over the passivation layer, the MIM structure including a first conductor layer, a second conductor layer disposed over the first conductor layer, and a third conductor layer disposed over the second conductor layer. A first insulator layer is disposed between the first conductor layer and the second conductor layer. A second insulator layer is disposed between the second conductor layer and the third conductor layer. One or more corners of the third conductor layer are rounded.

Abstract: A battery module capable of suppressing spread of battery fire including a case, a plurality of battery packs, a plurality of temperature sensors, an energy consumption module and a controller. The case forms an accommodation space, and the battery packs is accommodated in the accommodation space. The temperature sensors are dispersedly configured to the accommodation space, and the temperature sensors respectively detect an ambient temperature around configure locations. The controller is coupled to the temperature sensors, and when the ambient temperature detected by one of the temperature sensors is greater than or equal to a first specific temperature range, the controller controls the energy consumption module to consume a battery capacity of at least one battery pack around the one of the temperature sensors.

Abstract: An image processing method is applied to an operation device and includes analyzing an unprocessed image to split the unprocessed image into a first region and a second region, applying a first image processing algorithm to the first region for acquiring a first processed result, applying a second image processing algorithm different from the first image processing algorithm to the second region for acquiring a second processed result, and generating a processed image via the first processed result and the second processed result.

Abstract: A method of forming a semiconductor device includes: forming an etch stop layer over a substrate; forming a first diffusion barrier layer over the etch stop layer; forming a semiconductor device layer over the first diffusion barrier layer, the semiconductor device layer including a transistor; forming a first interconnect structure over the semiconductor device layer at a front side of the semiconductor device layer, the first interconnect structure electrically coupled to the transistor; attaching the first interconnect structure to a carrier; removing the substrate, the etch stop layer, and the first diffusion barrier layer after the attaching; and forming a second interconnect structure at a backside of the semiconductor device layer after the removing.

Abstract: A filter is used for removing metallic contaminants in a solvent used in microcircuit fabrication. The filter includes a filter housing including a filter membrane for filtering solvent including metallic contaminants, and a magnet arranged about the filter housing and configured to generate a magnetic field to attract the metallic contaminants prior to the metallic contaminants entering the filter membrane. The magnet is arranged such that the magnetic field of the magnet is greater in a periphery of the filter housing compared to a central portion of the filter housing.

Abstract: The present invention discloses a display panel and a display device. The display panel comprises a plurality of common electrode blocks and a plurality of display regions. During a display period, one or more common electrode blocks corresponding to one of the display regions which is to be displayed during the display period are coupled to a common voltage; and during the display period, one or more of the common electrode blocks corresponding to the display regions which are not to be displayed during the display period are kept in a floating state.

Abstract: A data storage device includes a substrate including a number of contact pads and a number of passive component packages coupled to the contact pads. The data storage device further includes a memory controller coupled to the substrate, and one or more NAND die stacks coupled to the substrate and in electrical communication with the memory controller. One or more of the passive component packages include a first passive component, a second passive component electrically connected to the first passive component, and a first terminal coupled to the first passive component. The passive component packages further include a second terminal coupled to the second passive component, and a third terminal coupled to a common node of the first passive component and the second passive component.

Abstract: A method performed by a UE is provided. The method includes receiving DCI on a PDCCH from a BS, the DCI indicating a PDSCH; receiving a MAC CE command on the PDSCH; determining, according to the DCI, whether a HARQ ACK feedback for a data reception on the PDSCH is needed to be transmitted; and applying, after determining that the HARQ ACK feedback is needed to be transmitted, the MAC CE command after a first slot identified by a first value of n+K0+K1+Np+M, where n is an index of a slot in which the DCI is received, K0 and K1 are slot offsets, Np indicates an approximated delay determined by a TA value, and M indicates a processing delay.

Abstract: Provided are compounds having a ligand LA of Formula I that are useful as emissive compounds in organic light emitting devices.

Abstract: A method for specifying layout of subpictures in video pictures is provided. A video decoder receives data from a bitstream to be decoded as a current picture of a video. For a current subpicture of a set of subpictures of the current picture, the video decoder determines a position of the current subpicture based on a width and a height of the current picture and a previously determined width and height of a particular subpicture in the set of subpictures. The video decoder reconstructs the current picture and the current subpicture based on the determined position.

Abstract: A camera device with image compensation and autofocus function, comprising a first carrying member, a second carrying member, a camera module, a first optical compensation component, a third carrying member, and an autofocus component. The second carrying member is movably assembled to the first carrying member. The first optical compensation component comprises a first force interaction member disposed at the first carrying member and a second force interaction member disposed at the second carrying member, which generate force interaction, allowing the second carrying member to move in the direction of a first axis or/and a second axis intersecting with an optical axis of the optical lens for optical compensation for the optical lens. The third carrying member bears the optical lens and is movably disposed on the second carrying member. The third carrying member could move along an optical axis of the optical lens.

Abstract: A degradable composite, a wind turbine blade, and a manufacturing method of the wind turbine blade are provided. The degradable composite includes 30% to 40% of a degradable epoxy resin composition, 45% to 55% of a fiber raw material, 0% to 20% of a core material, and 0% to 10% of an epoxy structural adhesive in mass percentages. The degradable epoxy resin composition includes a degradable modified resin. A degradable epoxy resin is adopted as a structural layer to manufacture a wind turbine blade that has excellent mechanical properties and conforms to the requirements of blade designs and the environment, health, and safety (EHS) standards in the industry. Because the degradable epoxy resin is used, the manufactured composite component can be degraded and separated under appropriate conditions to recover a resin liquid and a fiber raw material, and the recovered resin liquid and fiber raw material can be recycled.

Abstract: A semiconductor device includes first transistor having a first gate stack and first source/drain regions on opposing sides of the first gate stack; a second transistor having a second gate stack and second source/drain regions on opposing sides of the second gate stack; and a gate isolation structure separating the first gate stack from the second gate stack. The gate isolation structure includes a dielectric liner having a varied thickness along sidewalls of the first gate stack and the second gate stack and a dielectric fill material over the dielectric liner, wherein the dielectric fill material comprises a seam.