Abstract: Provided are organometallic compounds comprising a ligand comprising at least two moieties A and B which are linked by a linking group L2, wherein the ligand is coordinated to a central metal atom M. Also provided are formulations comprising these organometallic compounds. Further provided are organic light emitting devices (OLEDs) and related consumer products that utilize these organometallic compounds.

Abstract: This disclosure provides systems, methods, and devices for image processing that support enhanced white balancing operations. In a first aspect, a method of image processing includes receiving first image data obtained at a first aperture; determining a first output image frame based on the first image data by applying a first white balancing to at least a portion of the first image data; receiving second image data obtained at a second aperture; and determining a second output image frame based on the second image data by applying a second white balancing based on the first aperture and the second aperture to at least a portion of the second image data. The second white balancing may be based on a first compensation factor based on the first aperture and the second aperture used to adjust the first white balancing. Other aspects and features are also claimed and described.

Abstract: This disclosure provides data processing methods, apparatuses, and systems. In an implementation, a method comprises receiving, by a first data processing unit (DPU), a memory allocation request from a first service process in a computing node that comprises the first DPU, wherein the first DPU stores memory address assignment information that indicates a virtual memory address corresponding to a physical memory allocated by a storage node to the computing node. Determining, by the first DPU based on the memory address assignment information and in the virtual memory address corresponding to the physical memory allocated by the storage node to the computing node, a virtual memory address range assigned to the first service process, and when the first DPU receives a data storage request from the first service process, sending, by the first DPU, a write data request to the second DPU over a communication link between the first DPU and the second DPU.

Abstract: A radiotherapy system includes a neutron acceptor, an aerosolization device for aerosolizing the neutron acceptor, and an energy beam generator. A method for treating cancer, including: administering to a subject in need thereof an effective amount of an aerosolized neutron acceptor; and irradiating the subject with neutrons. A method for diagnosing cancer, including: administering to a subject in need thereof an effective amount of an aerosolized radioactive agent; and receiving an energy beam signal from the subject. A method for delivering a neutron receptor to a subject during radiation therapy, including aerosolizing the neutron receptor and administering to the subject an effective amount of the neutron receptor.

Abstract: The embodiments of the disclosure provide a pose calibrating method, a host, and a computer readable storage medium. The method includes: receiving a first pose of each of at least one target object from an external tracking device; receiving a first reference pose of a reference object from the external tracking device; tracking a second reference pose of the reference object; determining a converting relationship between the first reference pose and the second reference pose; and converting the first pose of each of the at least one target object into a corresponding second pose based on the converting relationship and accordingly providing a visual content of a reality service.

Abstract: A method of manufacturing a transmission gate includes overlying a substrate with first through fourth adjacent metal segments in a same metal layer. Each of the first and second metal segments, second and third metal segments, and third and fourth metal segments are offset from each other by an offset distance in a first direction, the first metal segment overlies a first active area in the substrate including first and second PMOS transistors, and the fourth metal segment overlies a second active area in the substrate including first and second NMOS transistors. The method includes configuring the first and second PMOS transistors and the first and second NMOS transistors as a transmission gate by forming first through third conductive paths, the first conductive path including a fifth metal segment overlying at least three of the first through fourth metal segments along a second direction perpendicular to the first direction.

Abstract: In an embodiment, a system, includes: a first pressurized load port interfaced with a workstation body; a second pressurized load port interfaced with the workstation body; the workstation body maintained at a set pressure level, wherein the workstation body comprises an internal material handling system configured to move a semiconductor workpiece within the workstation body between the first and second pressurized load ports at the set pressure level; a first modular tool interfaced with the first pressurized load port, wherein the first modular tool is configured to process the semiconductor workpiece; and a second modular tool interfaced with the second pressurized load port, wherein the second modular tool is configured to inspect the semiconductor workpiece processed by the first modular tool.

Abstract: A reacting device of dual path synchronous immunochromatographic platform includes a seat, an upper housing, and a fluid dividing funnel. The seat contains two immunochromatographic carriers. The hollow pipe portion has two sloped structures. A force bearing portion of the fluid dividing funnel can be pressed down, so two fluid exits of the fluid dividing funnel move towards these two sloped structures. The specimen drops and is guided into these two immunochromatographic carriers respectively. A reaction result can be observable. The fluid dividing funnel can divide the specimen into two immunochromatographic carriers evenly. The sloped structure can increase the accuracy of specimen supply. Excess specimen can be scraped off for enhancing the solving accuracy. In addition, it can decrease the possibility of false positive problem.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fin structures extending in a first direction over a semiconductor substrate. Each fin structure includes a first region proximate to the semiconductor substrate and a second region distal to the semiconductor substrate. An electrically conductive layer is formed between the first regions of a first adjacent pair of fin structures. A gate electrode structure is formed extending in a second direction substantially perpendicular to the first direction over the fin structure second region, and a metallization layer including at least one conductive line is formed over the gate electrode structure.

Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.

Abstract: A composite film includes a first thermoplastic elastomer film layer and a second thermoplastic elastomer film layer, wherein the first thermoplastic elastomer film layer includes a first styrenic block copolymer. The second thermoplastic elastomer film layer is disposed on the first thermoplastic elastomer film layer, wherein the second thermoplastic elastomer film layer includes a second styrenic block copolymer, diffusion particles dispersed in the second thermoplastic elastomer film layer, and a surface microstructure disposed on the surface of the second thermoplastic elastomer film layer.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a fin structure over a substrate, forming an isolation structure surrounding a lower portion of the fin structure, forming a protection layer over the isolation structure, etching the fin structure, the protection layer and the isolation structure to form a first recess in the fin structure and a second recess in the isolation structure, forming a source/drain feature to fill the first recess, and forming an interlayer dielectric layer over the source/drain feature and filling the second recess.

Abstract: An electrostatic field strength measuring apparatus includes an electrostatic field detection device and a processor. The electrostatic field detection device includes a ring light source configured to emit a light signal to a target object, and a reflection detector disposed within and surrounded by the ring light source and configured to receive a reflection signal, of the light signal, reflected by a surface of the target object and generate an electrical signal based upon the reflection signal. The processor is configured to determine, based upon the electrical signal, measures of electrostatic field strength at the surface of the target object.

Abstract: A display device includes an emission circuit, a first control circuit and a second control circuit. The emission circuit is coupled to a first node and is configured to emit light based on an emission signal and a voltage level of the first node. The first control circuit is configured to charge the first node based on a sweep signal and the emission signal. The second control circuit is configured to discharge the first node based on the sweep signal and the emission signal.

Abstract: A mechanism for fine adjusting an angle of a semiconductor wafer fixture includes a fixture for a semiconductor wafer, a turntable, a rotating motor and a base. The top surface of the fixture is provided with a positioning portion for accommodating a semiconductor wafer, the turntable is detachably installed under the fixture, the rotating motor connects the bottom of the turntable and is installed on the base. An assembly for fine adjusting an angle of a semiconductor wafer fixture includes the above mechanism and several air bearings installed on the circumferential area of the base to support the turntable so as to fine adjust an angle of the turntable and the fixture.

Abstract: A cable connector assembly includes: a mating plug including plural conductive terminals; a circuit board being electrically connected to the mating plug and including: plural terminal pads located at a front of the circuit board and mechanically and electrically connected to the conductive terminals; plural cable pads located at a rear of the circuit board and including plural pairs of high-speed cable pads; and plural conductive traces each connecting a corresponding terminal pad and a corresponding cable pad; and a cable mechanically and electrically connected to the cable pads; wherein the cable includes plural pairs of high-speed wires for transmitting high-speed signals, the conductive traces include plural pairs of high-speed conductive traces connecting the plural pairs of high-speed cable pads and corresponding terminal pads, each pair of high-speed cable pads are connected to a nearest pair of terminal pads.

Abstract: Provided are an imaging method and system for residual stress of a basin insulator and a method for preparing a test block. The imaging method includes cutting and preparing a standard industrial sample of a basin insulator and testing the acoustoelastic coefficient of the standard industrial sample; then obtaining the residual stress data of the basin insulator and obtaining the spatial point sound velocity distribution of the basin insulator; finally, obtaining a stress distribution cloud map of the basin insulator by calculation of the attribute value and the coordinate data of a to-be-measured location, and performing reliability verification based on the residual stress data.

Abstract: The composite heat dissipation material comprises at least one artificial graphite layer and a graphitic heat dissipation layer. The graphitic heat dissipation layer includes a graphite material layer, and the graphite material layer is not formed from artificial graphite materials. Further, the graphitic heat dissipation layer is bonded to the artificial graphite layer. The composite heat dissipation material of the present application can efficiently and rapidly dissipate heat energy produced from a heating source, thereby lowering temperature thereof.