Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a reader. The reader broadcasts a radio signal indicating an available slot set. The reader transmits an acknowledge (ACK) signal including a decoded sequence to an ambient internet of things (A-IoT) device. The reader receives an identifier from the A-IoT device. The identifier is a reply of the A-IoT device when there is a match between the decoded sequence and a chosen sequence, and the chosen sequence is a random sequence that responds to the radio signal in a random slot chosen from the available slot set.

Abstract: A metal compound thin film, a method of forming the same and a thin film catalyst for water electrolysis are provided. The method includes providing a substrate; and performing plural ink-jet printing operations to the substrate to form the metal compound thin film on the substrate. The substrate is a non-hydrophobic substrate. Each of the ink-jet printing operations includes depositing a first precursor on the substrate by using a first nozzle of an ink-jet system; and depositing a second precursor on the substrate by using a second nozzle of the ink-jet system. A chemical reaction occurs between the first precursor and the second precursor to form a metal compound, and the metal compound thin film includes plural layers of the metal compound. Therefore, patterning the thin film can be easily accomplished, and chemical solution can be effectively saved.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a reader. The reader receives a response signal set that responds to a radio signal, from an ambient internet of things (A-IoT) device set, a response signal in the response signal set being modulated by a corresponding A-IoT device in the A-IoT device set to include an identification of the corresponding A-IoT device. The reader identifies the corresponding A-IoT device based on the identification of the corresponding A-IoT device, and performs measurement for a positioning parameter. The reader executes a positioning related operation based on the identified A-IoT device and the measurement for the positioning parameter.

Abstract: A key structure is applicable to an electronic device having a housing. The key structure includes a seat, a switch, a button, and an elastic sheet. The seat is disposed in the housing and has a first through hole. The switch is disposed on the seat. A key pillar of the button passes through the first through hole to abut against the switch. The elastic sheet includes a body, and a plurality of first elastic arms, second elastic arms and third elastic arms. The first elastic arms extending from the body are abutting against the housing. The second elastic arms extending from an inner edge of the second through hole are engaged with the key pillar. The third elastic arms abutting against the keycap are configured to support the button and provide a restoring force that can restore the button from a pressed position to an initial position.

Abstract: A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a first conductive plug disposed in the first dielectric layer, and a second conductive plug disposed in the second dielectric layer and directly over the first conductive plug. The semiconductor device structure further includes a silicide portion disposed between the first conductive plug and the second conductive plug.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a UE. The UE receiving a unified waveform signal from a base station, wherein the unified waveform signal comprises an On-Off Keying (OOK) signal and an Orthogonal Frequency Division Multiplexing (OFDM) signal; determining whether an indicator in the OFDM signal indicates that the unified waveform signal is a low-power wake-up signal (LP-WUS); decoding the LP-WUS when the indicator indicates that the unified waveform signal is the LP-WUS; and terminating a decoding operation when the indicator indicates that the unified waveform signal is not the LP-WUS.

Abstract: A semiconductor structure including device structures arranged in a stack is provided. The device structures include substrates and through-substrate vias (TSVs). The TSVs are located in the substrates. The TSVs includes first TSVs. Each of the device structures includes the corresponding substrate and the corresponding first TSV. Each of the first TSVs passes through the corresponding substrate. The number of the TSVs in the endmost device structure is less than the number of the TSVs in another of the device structures. The first TSV in the endmost device structure and the first TSV in another of the device structures are aligned with each other and electrically connected to each other.

Abstract: The present invention discloses a cooling device including an accommodating tank, a turbulence plate, an adjustment structure and a control mechanism. The accommodating tank is adapted to accommodate a coolant. The turbulence plate divides the accommodating tank into a liquid inlet space and a cooling space. The turbulence plate includes a groove that divides the turbulence plate into a first plate portion and a second plate portion. The adjustment structure includes an adjustment plate corresponding to the groove. The control mechanism controls the adjustment plate to move between a first position and a second position, where when the adjustment plate moves from the first position to the second position, the adjustment plate passes through the groove and enters the liquid inlet space, to divide the liquid inlet space into a first chamber corresponding to the first plate portion and a second chamber corresponding to the second plate portion.

Abstract: The present invention discloses a cooling system which is suitable for being used in cooperation with a heat dissipation tank, and includes a filter unit, two working units, and two control valve groups arranged at the working units. The filter unit includes a filter, an inlet end, and an outlet end. The outlet end of the filter unit is connected to a liquid inlet of the heat dissipation tank. Each of the working units includes a driving assembly and a heat exchange assembly, each of the driving assemblies includes a first end, a second end, and a driving pump, the first end is connected to a liquid outlet of the heat dissipation tank, the second end is connected to the inlet end of the filter unit and one end of the heat exchange assembly, and another end of the heat exchange assembly is connected to the liquid inlet.

Abstract: A method of fabricating a semiconductor structure includes the following steps. A semiconductor wafer is provided. A plurality of first surface mount components and a plurality of second surface mount components are bonded onto the semiconductor wafer, wherein a first portion of each of the second surface mount components is overhanging a periphery of the semiconductor wafer. A first barrier structure is formed in between the second surface mount components and the semiconductor wafer. An underfill structure is formed under a second portion of each of the second surface mount components, wherein the first barrier structure blocks the spreading of the underfill structure from the second portion to the first portion.

Abstract: A stocking vehicle is provided. The stocking vehicle is configured to perform a stocking operation to transfer a first product unit from a first location to a second location. The stocking vehicle includes a stocking component. The stocking vehicle includes a motor coupled to the stocking component to facilitate performance of the stocking operation by the stocking component. The stocking vehicle includes an energy storage device configured to supply first energy to the motor during a first state of the motor and store second energy of the motor during a second state of the motor.

Abstract: Various solutions for using on-demand reference signal (RS) or system information block (SIB) for network energy saving with respect to user equipment and network apparatus in mobile communications are described. An apparatus may determine whether to trigger an on-demand RS/SIB or SIB request according to a trigger condition. The apparatus may transmit the on-demand RS/SIB or SIB request to a network node in an event that the trigger condition is satisfied. The apparatus may receive a response of the on-demand RS/SIB or SIB request from the network node. The apparatus may perform an on-demand RS/SIB or SIB measurement according to the response.

Abstract: Various solutions for wake-up signal (WUS) transmission based on timing information with respect to user equipment and network apparatus in mobile communications are described. An apparatus may receive a system information and a timing information for waking up a non-anchor cell from an anchor cell. The apparatus may transmit a WUS based on the system information and the timing information to wake up the non-anchor cell. The anchor cell comprises a cell where the apparatus is capable of receiving the system information and the timing information and performing a timing and frequency synchronization. The non-anchor cell comprises a cell where the apparatus cannot receive the system information and the timing information.

Abstract: An adaptive-bias metal-oxide-semiconductor (MOS) device comprises a first terminal, a second terminal, a third terminal, a first MOS device, and a second MOS device. The first MOS device generally may have a first width and a first gate length. The second MOS device generally may have a second width and a second gate length. The first terminal may be connected to a first source terminal of the first MOS device and a second source terminal of the second MOS device. The second terminal may be connected to a first drain terminal of the first MOS device, a first gate terminal of the first MOS device, and a second gate terminal of the second MOS device. The third terminal may be connected to a second drain terminal of the second MOS device. The first MOS device and the second MOS device are generally configured to operate in a sub-threshold operating region.

Abstract: A semiconductor device is provided, including a substrate, a transistor structure, a metal silicide layer, and a metal silicon nitride layer. The transistor structure is formed on the substrate. The transistor structure includes a source region, a drain region and a gate structure. The gate structure is located between the source region and the drain region. The metal silicide layer is formed on the top surface of the source region and the top surface of the drain region, and the metal silicon nitride layer is formed on the surface of the metal silicide layer.

Abstract: Disclosed is a microfluidic detection device including a circuit substrate and a transparent substrate. The circuit substrate is provided with at least one first light-emitting device used to emit a detection beam, a photodetector used to receive the detection beam and send out a sensing signal, and a control circuit electrically connected to the first light-emitting device and the photodetector. The transparent substrate overlaps the circuit substrate and is provided with a microfluidic channel and a light guide structure. The light guide structure has a light incident surface disposed corresponding to the first light-emitting device and a light exiting surface disposed corresponding to the photodetector. The light guide structure extends from each of the light incident surface and the light exiting surface to the microfluidic channel and is adapted to transmit the detection beam into and out of the microfluidic channel.

Abstract: A method includes forming a multi-layer stack over a semiconductor substrate, the multi-layer stack comprising a plurality of sacrificial layers that alternate with a plurality of channel layers, forming a dummy gate stack over a top surface and sidewalls of the multi-layer stack, forming first spacers on sidewalls of the dummy gate stack, growing an epitaxial source/drain region that extends through the plurality of sacrificial layers and the plurality of channel layers, forming a metal-semiconductor alloy region on first portions of the epitaxial source/drain region, forming a coating layer on the metal-semiconductor alloy region, wherein during the forming of the metal-semiconductor alloy region and the coating layer, a residual layer is formed on sidewalls of the first spacers, and performing a wet clean process to selectively etch the residual layer from the sidewalls of the first spacers.

Abstract: A method for beam management performed by a UE is provided. The method includes: receiving a DCI format in a first BWP based on a first QCL assumption specific to the first BWP, the DCI format scheduling a PDSCH reception in a second BWP; receiving an RRC configuration that includes a plurality of candidate TCI states associated with a serving cell in which the PDSCH is scheduled; receiving a MAC CE that indicates a subset of the plurality of candidate TCI states for activation in the second BWP; determining a second QCL assumption specific to the second BWP based on one TCI state in the subset; and receiving the PDSCH in the second BWP based on the second QCL assumption.

Abstract: An electronic device is provided. The electronic device includes a first substrate; a second substrate disposed opposite to the first substrate; a liquid crystal layer disposed between the first substrate and the second substrate; a plurality of first electrodes disposed between the first substrate and the liquid crystal layer; a plurality of second electrodes disposed between the second substrate and the liquid crystal layer; a first signal line disposed between the first substrate and the liquid crystal layer, and electrically connected to one of the plurality of first electrodes; and a second signal line disposed between the second substrate and the liquid crystal layer, and electrically connected to one of the plurality of second electrodes. The first signal line and the second signal line include a blackened metal.