Abstract: A system and a method for parameter optimization with adaptive search space and a user interface using the same are provided. The system includes a data acquisition unit, an adaptive adjustment unit and an optimization search unit. The data acquisition unit obtains a set of executed values of several operating parameters and a target parameter. The adaptive adjustment unit includes a parameter space transformer and a search range definer. The parameter space transformer performs a space transformation on a parameter space of the operating parameters according to the executed values. The search range definer defines a parameter search range in a transformed parameter space based on the sets of the executed values. The optimization search unit takes the parameter search range as a limiting condition and takes optimizing the target parameter as a target to search for a set of recommended values of the operating parameters.

Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.

Abstract: The present disclosure provides a semiconductor structure including a base layer, a first conductive line disposed on the base layer, a first dielectric pillar disposed on the base layer, a second dielectric pillar disposed on the base layer, a first liner, and a second liner. The first conductive line is disposed between the first dielectric pillar and the second dielectric pillar. The first liner encloses a first air gap, and is disposed between the first dielectric pillar and the first conductive line. The second liner encloses a second air gap, and is disposed between the second dielectric pillar and the first conductive line.

Abstract: A touch display and a sensing method are provided. The touch display includes a substrate, a display array disposed on the substrate and having an upper layer which includes a shielding metal layer, a touch sensor disposed above the display array, and a controller coupled to the display array and the touch sensor. The controller is configured to enable the display array to display and obtain a first sensing result from the touch sensor during a first time interval, and disable the display array and obtain a second sensing result from the touch sensor during a second time interval. According to the first sensing result and the second sensing result, a touch determination result of whether the touch display receives a touch from a user is generated.

Abstract: The present disclosure provides a semiconductor structure including a base layer, a first conductive line disposed on the base layer, a first dielectric pillar disposed on the base layer, a second dielectric pillar disposed on the base layer, a first liner, and a second liner. The first conductive line is disposed between the first dielectric pillar and the second dielectric pillar. The first liner encloses a first air gap, and is disposed between the first dielectric pillar and the first conductive line. The second liner encloses a second air gap, and is disposed between the second dielectric pillar and the first conductive line.

Abstract: The present disclosure provides a semiconductor structure for reducing capacitive coupling between adjacent conductive features. The semiconductor structure includes a base layer, a plurality of conductive lines, a plurality of dielectric pillars, and a sealing layer having a plurality of sealing caps. The conductive lines are disposed on the base layer. The dielectric pillars are disposed on the base layer and separated from the conductive layer. The sealing caps are disposed between the conductive lines and the dielectric pillars, wherein the sealing caps are in contact with the conductive lines and the dielectric pillars, and separated from the base layer.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The method includes providing a substrate including an array area and a peripheral area adjacent to the array area, forming word line structures and source/drain regions in the array area, and a word line protection layer on the array area, forming a first hard mask layer over the substrate and having a step height adjacent to a border between the array area and the peripheral area, forming a bit line contact in the array area and between the word line structures by using the first hard mask layer as a pattern guide, and forming a gate electrode layer on the peripheral area.

Abstract: The present application discloses a method for fabricating a semiconductor device. The method includes forming a fin on a substrate; forming a gate structure on the fin; forming impurity regions on two sides of the fin; forming contacts correspondingly on the impurity regions; and forming conductive covering layers correspondingly on the contacts. Forming the contacts includes forming lower portions correspondingly on the impurity regions and below the first dielectric layer; forming middle portions correspondingly on the lower portions; and forming upper portions correspondingly on the middle portions, and protruding from the top surface of the second dielectric layer.

Abstract: A heat dissipation module is provided and includes a cold plate having a housing, and a frame body disposed on the housing and having two sidewalls and at least one first rib, where the two sidewalls are positioned at two sides of the housing, respectively, and the first rib is used to provide a deformation resistance so that the heat dissipation module will not be seriously deformed when secured.

Abstract: A striking device includes a swing arm unit, an impact member and two restoring units. Each of the restoring units includes a stationary seat removably connected to the swing arm unit, a moving seat removably and co-movably connected to the impact member, first and second coupling sets, and a resilient member interconnecting the stationary seat and the moving seat to bias the moving seat toward the stationary seat. For each of the restoring units, two portions of the first coupling set are formed respectively on the stationary seat and the swing arm unit and coupled removably with each other, and two portions of the second coupling set are formed respectively on the moving seat and the impact member and coupled removably with each other.

Abstract: A method for fabricating a semiconductor device includes forming a trench extending from a top surface of a semiconductor substrate into the semiconductor substrate, and forming a gate dielectric layer lining the trench. The method also includes forming a gate electrode layer in the trench and over the top surface of the semiconductor substrate, and forming a bit line structure over a S/D region of the semiconductor structure. The bit line structure includes a protection liner having a U-shaped profile and in direct contact with an upper portion of the gate dielectric layer. The formation of the gate electrode layer includes performing a first deposition process, performing a first etching process after the first deposition process, and performing a second deposition process after the first etching process.

Abstract: The sensing circuit comprises a plurality of first transceiver capacitors and a plurality of second transceiver capacitors. The plurality of first transceiver capacitors are configured to send and receive a plurality of first detection signals. The plurality of second transceiver capacitors, configured to send and receive a plurality of second detection signals. During a self-capacitance mode, the plurality of first transceiver capacitors are configured to output the plurality of first detection signals and receive the plurality of first detection signals, and the plurality of second transceiver capacitors are configured to output the plurality of second detection signals and receive the plurality of second detection signals. During a mutual-capacitance mode, the plurality of first transceiver capacitors are configured to output the plurality of first detection signals, and the plurality of second transceiver capacitors are configured to receive the plurality of first detection signals.

Abstract: The disclosure provides an electronic device including a host control circuit, a display driving circuit, a touch driving circuit and a logic circuit. The host control circuit is configured to provide a first reset control signal. The display driving circuit is configured to reset according to the first reset control signal. The logic circuit is configured to generate a second reset control signal to the touch driving circuit according to the first reset control signal and an enable signal. During a sleep mode of the electronic device, the enable signal has a first logic level. In response to the enable signal at the first logic level, the logic circuit generates the second reset control signal at the first logic level. The touch driving circuit does not reset according to the second reset control signal at the first logic level.

Abstract: The present application discloses a semiconductor device with an inverter and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a gate structure positioned on the substrate; a first impurity region and a second impurity region respectively positioned on two sides of the gate structure and positioned in the substrate; a first contact positioned on the first impurity region and including a first resistance; a second contact positioned on the first impurity region and including a second resistance less than the first resistance of the first contact. The first contact is configured to electrically couple to a power supply and the second contact is configured to electrically couple to a signal output. The gate structure, the first impurity region, the second impurity region, the first contact, and the second contact together configure an inverter.

Abstract: A display device includes a display panel, a power integrated circuit, a comparison circuit and a selection circuit. The display panel is configured to receive a system cross voltage. The power integrated circuit is configured to provide the system cross voltage to the display panel and includes a current conversion circuit configured to convert a calibration current outputted by the display panel when displaying a calibration frame into a detection voltage. The comparison circuit is configured to compare the detection voltage with a threshold to generate a comparison result. The selection circuit is configured to determine a magnitude of the system cross voltage according to the comparison result. The power integrated circuit is configured to generate the system cross voltage according to the magnitude of the system cross voltage determined by the selection circuit to provide the system cross voltage to the display panel.

Abstract: A display device includes a display panel, a power integrated circuit, a comparison circuit and a selection circuit. The display panel is configured to receive a system cross voltage. The power integrated circuit is configured to provide the system cross voltage to the display panel and includes a current conversion circuit configured to convert a calibration current outputted by the display panel when displaying a calibration frame into a detection voltage. The comparison circuit is configured to compare the detection voltage with a threshold to generate a comparison result. The selection circuit is configured to determine a magnitude of the system cross voltage according to the comparison result. The power integrated circuit is configured to generate the system cross voltage according to the magnitude of the system cross voltage determined by the selection circuit to provide the system cross voltage to the display panel.

Abstract: The present application provides a semiconductor device. The semiconductor device includes a bonding pad disposed over a semiconductor substrate; a first spacer disposed over a top surface of the bonding pad; a second spacer disposed over a sidewall of the bonding pad; a dielectric layer between the bonding pad and the semiconductor substrate. The dielectric layer includes silicon-rich oxide; and a conductive bump disposed over the first passivation layer. The conductive bump is electrically connected to a source/drain (S/D) region in the semiconductor substrate through the bonding pad. The semiconductor device also includes a dielectric liner disposed between the first spacer and the bonding pad; and a first passivation layer covering the second spacer, wherein the dielectric liner is L-shaped, and the first spacer is separated from the bonding pad by the dielectric liner.

Abstract: The present application discloses a semiconductor device with an inverter and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a gate structure positioned on the substrate; a first impurity region and a second impurity region respectively positioned on two sides of the gate structure and positioned in the substrate; a first contact positioned on the first impurity region and including a first resistance; a second contact positioned on the first impurity region and including a second resistance less than the first resistance of the first contact. The first contact is configured to electrically couple to a power supply and the second contact is configured to electrically couple to a signal output. The gate structure, the first impurity region, the second impurity region, the first contact, and the second contact together configure an inverter.

Abstract: The present application provides a semiconductor device. The semiconductor device includes a bonding pad disposed over a semiconductor substrate; a first spacer disposed over a top surface of the bonding pad; a second spacer disposed over a sidewall of the bonding pad; a dielectric layer between the bonding pad and the semiconductor substrate. The dielectric layer includes silicon-rich oxide; and a conductive bump disposed over the first passivation layer. The conductive bump is electrically connected to a source/drain (S/D) region in the semiconductor substrate through the bonding pad.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a fin, a gate structure positioned on the fin, impurity regions positioned on two sides of the fin, contacts positioned on the impurity regions, and conductive covering layers positioned on the contacts. The conductive covering layers are formed of copper germanide.