Abstract: A display apparatus includes a first pad group, a first light-emitting element, a pixel driving structure, a first conductive layer and a second conductive layer. The first conductive layer is disposed between the first pad group and the pixel driving structure. The first conductive layer includes a first conductive pattern and a second conductive pattern. The first conductive pattern is electrically connected to one of the plurality of first pads and the pixel driving structure. The second conductive pattern is electrically connected to another one of the plurality of first pads. The first conductive pattern and the second conductive pattern have a first light-transmitting gap. The first light-transmitting gap is located below the first light-emitting element. The second conductive layer is disposed between the first conductive layer and the pixel driving structure. The second conductive layer includes a third conductive pattern shielding the first light-transmitting gap.

Abstract: The present invention provides a wearable device and an operating method thereof. A power circuit provides an analog voltage source to a touch display driver integrated circuit through a first pin; the power circuit provides a digital voltage source to the touch display driver integrated circuit and a fingerprint on display (FOD) recognition circuit through a second pin; and the power circuit provides a first OLED voltage to an organic light-emitting diode (OLED) and the FOD recognition circuit through a third pin, wherein the FOD recognition circuit uses the first OLED voltage as an analog voltage source.

Abstract: The present invention provides a wearable device and an operating method thereof. A power circuit provides an analog voltage source to a touch display driver integrated circuit through a first pin; the power circuit provides a digital voltage source to the touch display driver integrated circuit and a fingerprint on display (FOD) recognition circuit through a second pin; and the power circuit provides a first OLED voltage to an organic light-emitting diode (OLED) and the FOD recognition circuit through a third pin, wherein the FOD recognition circuit uses the first OLED voltage as an analog voltage source.

Abstract: A pneumatic puller includes a shell unit, a pulling member that has a fixed section and an exposed section, a piston that is fixedly connected to the fixed section, a directional valve assembly that is movably mounted to the piston, and a cylinder that is sleeved on the fixed section. The cylinder and the piston define a first chamber and a second chamber. The cylinder is movable along the fixed section between a first reverse position and a second reverse position relative to the piston when urged by pressure of a gas. The cylinder abuts against one side of the piston and the directional valve assembly releases the gas into the second chamber when the cylinder is in the first reverse position. The cylinder moves along the fixed section away from the exposed section and hits the piston when moving from the first reverse position to the second reverse position.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The method includes providing a substrate including an array area and a peripheral area adjacent to the array area, forming word line structures and source/drain regions in the array area, and a word line protection layer on the array area, forming a first hard mask layer over the substrate and having a step height adjacent to a border between the array area and the peripheral area, forming a bit line contact in the array area and between the word line structures by using the first hard mask layer as a pattern guide, and forming a gate electrode layer on the peripheral area.

Abstract: The present application discloses a semiconductor device and a semiconductor device. The method includes providing a substrate including an array area and a peripheral area adjacent to the array area, forming word line structures and source/drain regions in the array area, and a word line protection layer on the array area, forming a first hard mask layer over the substrate and having a step height adjacent to a border between the array area and the peripheral area, forming a bit line contact in the array area and between the word line structures by using the first hard mask layer as a pattern guide, and forming a gate electrode layer on the peripheral area.

Abstract: A fluid heat dissipation device includes a first cold plate, a first adapter and a fluid delivery pipeline. The first cold plate is used to cool a first heat source, the first adapter is connected to the first cold plate, and the fluid delivery pipeline is connected to the first adapter and fluidly communicated with the first cold plate to improve the production efficiency and quality of the fluid heat dissipation device.

Abstract: A method for fabricating a semiconductor device includes forming a trench extending from a top surface of a semiconductor substrate into the semiconductor substrate, and forming a gate dielectric layer lining the trench. The method also includes forming a gate electrode layer in the trench and over the top surface of the semiconductor substrate, and forming a bit line structure over a S/D region of the semiconductor structure. The bit line structure includes a protection liner having a U-shaped profile and in direct contact with an upper portion of the gate dielectric layer. The formation of the gate electrode layer includes performing a first deposition process, performing a first etching process after the first deposition process, and performing a second deposition process after the first etching process.

Abstract: A method for fabricating a semiconductor device includes forming a trench extending from a top surface of a semiconductor substrate into the semiconductor substrate, and forming a gate dielectric layer lining the trench. The method also includes forming a gate electrode layer in the trench and over the top surface of the semiconductor substrate, and forming a bit line structure over a S/D region of the semiconductor structure. The bit line structure includes a protection liner having a U-shaped profile and in direct contact with an upper portion of the gate dielectric layer. The formation of the gate electrode layer includes performing a first deposition process, performing a first etching process after the first deposition process, and performing a second deposition process after the first etching process.

Abstract: The disclosure provides an electronic device including a host control circuit, a display driving circuit, a touch driving circuit and a logic circuit. The host control circuit is configured to provide a first reset control signal. The display driving circuit is configured to reset according to the first reset control signal. The logic circuit is configured to generate a second reset control signal to the touch driving circuit according to the first reset control signal and an enable signal. During a sleep mode of the electronic device, the enable signal has a first logic level. In response to the enable signal at the first logic level, the logic circuit generates the second reset control signal at the first logic level. The touch driving circuit does not reset according to the second reset control signal at the first logic level.

Abstract: The present disclosure provides a semiconductor structure including a base layer, a first conductive line disposed on the base layer, a first dielectric pillar disposed on the base layer, a second dielectric pillar disposed on the base layer, a first liner, and a second liner. The first conductive line is disposed between the first dielectric pillar and the second dielectric pillar. The first liner encloses a first air gap, and is disposed between the first dielectric pillar and the first conductive line. The second liner encloses a second air gap, and is disposed between the second dielectric pillar and the first conductive line.

Abstract: A touch display and a sensing method are provided. The touch display includes a substrate, a display array disposed on the substrate and having an upper layer which includes a shielding metal layer, a touch sensor disposed above the display array, and a controller coupled to the display array and the touch sensor. The controller is configured to enable the display array to display and obtain a first sensing result from the touch sensor during a first time interval, and disable the display array and obtain a second sensing result from the touch sensor during a second time interval. According to the first sensing result and the second sensing result, a touch determination result of whether the touch display receives a touch from a user is generated.

Abstract: The present disclosure provides a semiconductor structure including a base layer, a first conductive line disposed on the base layer, a first dielectric pillar disposed on the base layer, a second dielectric pillar disposed on the base layer, a first liner, and a second liner. The first conductive line is disposed between the first dielectric pillar and the second dielectric pillar. The first liner encloses a first air gap, and is disposed between the first dielectric pillar and the first conductive line. The second liner encloses a second air gap, and is disposed between the second dielectric pillar and the first conductive line.

Abstract: The present disclosure provides a semiconductor structure for reducing capacitive coupling between adjacent conductive features. The semiconductor structure includes a base layer, a plurality of conductive lines, a plurality of dielectric pillars, and a sealing layer having a plurality of sealing caps. The conductive lines are disposed on the base layer. The dielectric pillars are disposed on the base layer and separated from the conductive layer. The sealing caps are disposed between the conductive lines and the dielectric pillars, wherein the sealing caps are in contact with the conductive lines and the dielectric pillars, and separated from the base layer.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The method includes providing a substrate including an array area and a peripheral area adjacent to the array area, forming word line structures and source/drain regions in the array area, and a word line protection layer on the array area, forming a first hard mask layer over the substrate and having a step height adjacent to a border between the array area and the peripheral area, forming a bit line contact in the array area and between the word line structures by using the first hard mask layer as a pattern guide, and forming a gate electrode layer on the peripheral area.

Abstract: The present application discloses a method for fabricating a semiconductor device. The method includes forming a fin on a substrate; forming a gate structure on the fin; forming impurity regions on two sides of the fin; forming contacts correspondingly on the impurity regions; and forming conductive covering layers correspondingly on the contacts. Forming the contacts includes forming lower portions correspondingly on the impurity regions and below the first dielectric layer; forming middle portions correspondingly on the lower portions; and forming upper portions correspondingly on the middle portions, and protruding from the top surface of the second dielectric layer.

Abstract: A heat dissipation module is provided and includes a cold plate having a housing, and a frame body disposed on the housing and having two sidewalls and at least one first rib, where the two sidewalls are positioned at two sides of the housing, respectively, and the first rib is used to provide a deformation resistance so that the heat dissipation module will not be seriously deformed when secured.

Abstract: A striking device includes a swing arm unit, an impact member and two restoring units. Each of the restoring units includes a stationary seat removably connected to the swing arm unit, a moving seat removably and co-movably connected to the impact member, first and second coupling sets, and a resilient member interconnecting the stationary seat and the moving seat to bias the moving seat toward the stationary seat. For each of the restoring units, two portions of the first coupling set are formed respectively on the stationary seat and the swing arm unit and coupled removably with each other, and two portions of the second coupling set are formed respectively on the moving seat and the impact member and coupled removably with each other.

Abstract: A method for fabricating a semiconductor device includes forming a trench extending from a top surface of a semiconductor substrate into the semiconductor substrate, and forming a gate dielectric layer lining the trench. The method also includes forming a gate electrode layer in the trench and over the top surface of the semiconductor substrate, and forming a bit line structure over a S/D region of the semiconductor structure. The bit line structure includes a protection liner having a U-shaped profile and in direct contact with an upper portion of the gate dielectric layer. The formation of the gate electrode layer includes performing a first deposition process, performing a first etching process after the first deposition process, and performing a second deposition process after the first etching process.

Abstract: The sensing circuit comprises a plurality of first transceiver capacitors and a plurality of second transceiver capacitors. The plurality of first transceiver capacitors are configured to send and receive a plurality of first detection signals. The plurality of second transceiver capacitors, configured to send and receive a plurality of second detection signals. During a self-capacitance mode, the plurality of first transceiver capacitors are configured to output the plurality of first detection signals and receive the plurality of first detection signals, and the plurality of second transceiver capacitors are configured to output the plurality of second detection signals and receive the plurality of second detection signals. During a mutual-capacitance mode, the plurality of first transceiver capacitors are configured to output the plurality of first detection signals, and the plurality of second transceiver capacitors are configured to receive the plurality of first detection signals.