Abstract: A portable power storage and supply system having means for AC charging, DC charging, AC discharging and DC discharging wherein any one or any combination of the AC and DC charging and discharging can be carried at one time. The system includes an inverter, one or more battery modules and control means for controlling the AC and DC charging and discharging functions for safe and efficient operation. DC charging can include energy from a renewable energy source. The battery modules are separable from the system for providing DC energy for energizing automotive battery jumper cables or for energizing DC powered devices.

Abstract: A family of Li-ion battery cathode materials and methods of synthesizing the materials. The cathode material is a defective crystalline lithium transition metal phosphate of a specific chemical form. The material can be synthesized in air, eliminating the need for a furnace having an inert gas atmosphere. Excellent cycling behavior and charge/discharge rate capabilities are observed in batteries utilizing the cathode materials.

Abstract: A unit for use within a furnace which is absent a controlled atmosphere, for carrying out a synthesizing process for synthesizing precursors to form a synthesized product at elevated temperatures. The unit consists of a vessel, having at least one opening, for containing materials of the synthesizing process, and a solid reductive material. The materials of the synthesizing process are separated from the atmosphere of the furnace by either the vessel or the reductive material. The unit is especially suited for synthesizing LiFePO4 from Fe2O3, Li2CO3, carbon black, and phosphoric acid precursors.

Abstract: The invention provides a method for forming a metal silicide layer. The method comprises steps of providing a substrate and forming a nickel-noble metal layer over the substrate. A grain boundary sealing layer is formed on the nickel-noble metal layer and then an oxygen diffusion barrier layer is formed on the grain boundary sealing layer. Thereafter, a rapid thermal process is performed to transform a portion of the nickel-noble metal layer into a metal silicide layer. Finally, the oxygen diffusion barrier layer, the grain boundary sealing layer and the rest portion of the nickel-noble metal layer are removed.

Abstract: A family of Li-ion battery cathode materials and methods of synthesizing the materials. The cathode material is a defective crystalline lithium transition metal phosphate of a specific chemical form. The material can be synthesized in air, eliminating the need for a furnace having an inert gas atmosphere. Excellent cycling behavior and charge/discharge rate capabilities are observed in batteries utilizing the cathode materials.

Abstract: A family of Li-ion battery cathode materials and methods of synthesizing the materials. The cathode material is a defective crystalline lithium transition metal phosphate of a specific chemical form. The material can be synthesized in air, eliminating the need for a furnace having an inert gas atmosphere. Excellent cycling behavior and charge/discharge rate capabilities are observed in batteries utilizing the cathode materials.

Abstract: A family of Li-ion battery cathode materials and methods of synthesizing the materials. The cathode material is a defective crystalline lithium transition metal phosphate of a specific chemical form. The material can be synthesized in air, eliminating the need for a furnace having an inert gas atmosphere. Excellent cycling behavior and charge/discharge rate capabilities are observed in batteries utilizing the cathode materials.

Abstract: A rechargeable battery, battery set or battery pack having a circuit or a plurality of circuits for providing self-discharging thereof electrically connected in parallel are used to form rechargeable battery assemblies and electric power supply systems for use in electric and hybrid vehicles and the like.

Abstract: A family of Li-ion battery cathode materials and methods of synthesizing the materials. The cathode material is a defective crystalline lithium transition metal phosphate of a specific chemical form. The material can be synthesized in air, eliminating the need for a furnace having an inert gas atmosphere. Excellent cycling behavior and charge/discharge rate capabilities are observed in batteries utilizing the cathode materials.

Abstract: A semiconductor device is provided. A transistor is formed on a substrate, and a metal silicide layer is formed on the surface of a gate conductor layer and a source/drain region. Next, a surface treatment process is performed to selectively form a protection layer on the surface of the metal silicide layer. Then, a spacer of the transistor is partially removed using the protection layer as a mask, so as to reduce the width of the spacer. Then, a stress layer is formed on the substrate.

Abstract: A rechargeable battery, battery set or battery pack having a circuit or a plurality of circuits for providing self-discharging thereof electrically connected in parallel are used to form rechargeable battery assemblies and electric power supply systems for use in electric and hybrid vehicles and the like.

Abstract: A method of removing material layer is disclosed. First, a semiconductor substrate is fixed on a rotating platform, where a remnant material layer is included on the surface of the semiconductor substrate. Afterward, an etching process is carried out. In the etching process, the rotating platform is rotated, and an etching solution is sprayed from a center region and a side region of the rotating platform toward the semiconductor substrate until the material layer is removed. Since the semiconductor substrate is etched by the etching solution sprayed from both the center region and the side region of the rotating platform, the etching uniformity of the semiconductor substrate is improved.

Abstract: A silicidation process for a MOS transistor and a resulting transistor structure are described. The MOS transistor includes a silicon substrate, a gate dielectric layer, a silicon gate, a cap layer on the silicon gate, a spacer on the sidewalls of the silicon gate and the cap layer, and S/D regions in the substrate beside the silicon gate. The process includes forming a metal silicide layer on the S/D regions, utilizing plasma of a reactive gas to react a surface layer of the metal silicide layer into a passivation layer, removing the cap layer and then reacting the silicon gate into a fully silicided gate.

Abstract: The invention provides a method for forming a metal silicide layer. The method comprises steps of providing a substrate and forming a nickel-noble metal layer over the substrate. A grain boundary sealing layer is formed on the nickel-noble metal layer and then an oxygen diffusion barrier layer is formed on the grain boundary sealing layer. Thereafter, a rapid thermal process is performed to transform a portion of the nickel-noble metal layer into a metal silicide layer. Finally, the oxygen diffusion barrier layer, the grain boundary sealing layer and the rest portion of the nickel-noble metal layer are removed.

Abstract: A method for cleaning suicide includes providing a substrate having at least an intergraded silicide and residues, sequentially performing an ammonia hydrogen peroxide (APM) mixture cleaning process and a vaporized hydrochloric acid-hydrogen peroxide mixture (HPM) cleaning process to remove the residues, and performing a sulfuric acid-hydrogen peroxide mixture (SPM) cleaning process to remove residuals of the vaporized HPM cleaning process.

Abstract: A method of stripping a remnant metal is disclosed. The remnant metal is formed on a transitional silicide of a silicon substrate. Firstly, a surface oxidation process is performed on the transitional silicide, so as to form a protective layer on the transitional silicide. Then, a HPM stripping process is performed on the silicon substrate in order to strip the remnant metal.

Abstract: A method of fabricating semiconductor device is provided. A transistor is formed on a substrate, and a metal silicide layer is formed on the surface of a gate conductor layer and a source/drain region. Next, a surface treatment process is performed to selectively form a protection layer on the surface of the metal silicide layer. Then, a spacer of the transistor is partially removed using the protection layer as a mask, so as to reduce the width of the spacer. Then, a stress layer is formed on the substrate.

Abstract: A semiconductor process is provided. The semiconductor process includes providing a substrate. Then, a surface treatment is performed to the substrate to form a buffer layer on the substrate. Next, a first pre-amorphous implantation is performed to the substrate.

Abstract: A method of fabricating semiconductor device is provided. A transistor is formed on a substrate, and a metal suicide layer is formed on the surface of a gate conductor layer and a source/drain region. Next, a surface treatment process is performed to selectively form a protection layer on the surface of the metal silicide layer. Then, a spacer of the transistor is partially removed using the protection layer as a mask, so as to reduce the width of the spacer. Then, a stress layer is formed on the substrate.

Abstract: A semiconductor device is provided. A transistor is formed on a substrate, and a metal silicide layer is formed on the surface of a gate conductor layer and a source/drain region. Next, a surface treatment process is performed to selectively form a protection layer on the surface of the metal silicide layer. Then, a spacer of the transistor is partially removed using the protection layer as a mask, so as to reduce the width of the spacer. Then, a stress layer is formed on the substrate.