Abstract: A unit for use within a furnace which is absent a controlled atmosphere, for carrying out a synthesizing process for synthesizing precursors to form a synthesized product at elevated temperatures. The unit consists of a vessel, having at least one opening, for containing materials of the synthesizing process, and a solid reductive material. The materials of the synthesizing process are separated from the atmosphere of the furnace by either the vessel or the reductive material. The unit is especially suited for synthesizing LiFePO4 from Fe2O3, Li2CO3, carbon black, and phosphoric acid precursors.

Abstract: A method of making a transistor device having silicided source/drain is provided. A gate electrode is formed on a substrate with a gate dielectric layer therebetween. A spacer is formed on sidewalls of the gate electrode. A source/drain is implanted into the substrate. A pre-amorphization implant (PAI) is performed to form an amorphized layer on the source/drain. A post-PAI annealing process is performed to repair defects formed during the PAI process. A metal silicide layer is then formed from the amorphized layer.

Abstract: A method of stripping a remnant metal is disclosed. The remnant metal is formed on a transitional silicide of a silicon substrate. Firstly, a surface oxidation process is performed on the transitional silicide, so as to form a protective layer on the transitional silicide. Then, a HPM stripping process is performed on the silicon substrate in order to strip the remnant metal.

Abstract: A method for fabricating a metal silicide is described. First, a silicon material layer is provided. An alloy layer is formed on the silicon material layer, and the alloy layer is made from a first metal and a second metal, wherein, the first metal is a refractory metal, and the second metal is selected from a group consisting of Pt, Pd, Mo, Ru, and Ta. A first rapid thermal process (RTP) is performed at a first temperature. A first cleaning process is performed by using a cleaning solution. A second RTP is performed at a second temperature, wherein the second temperature is higher than the first temperature. A second cleaning process is performed by using a cleaning solution including a hydrochloric acid.

Abstract: A Li-ion polymer battery and methods for its fabrication. A first and second layer, of a polymer/particulate material composition, separate and bind each anode and cathode. The polymer of the first layer and its associated solvent differ from the polymer of the second layer and its associated solvent. Solubility requirements are such that the polymer of the first layer is non-soluble in the solvent of the second layer, and the polymer of the second layer is non-soluble in the solvent of the first layer. The polymers and particulate materials of the layers form a porous structure for containing the electrolyte of the battery so as to eliminate the need for a substantial case for enclosing the battery.

Abstract: A family of Li-ion battery cathode materials and methods of synthesizing the materials. The cathode material is a defective crystalline lithium transition metal phosphate of a specific chemical form. The material can be synthesized in air, eliminating the need for a furnace having an inert gas atmosphere. Excellent cycling behavior and charge/discharge rate capabilities are observed in batteries utilizing the cathode materials.

Abstract: An optical sub-assembly (OSA) module for suppressing optical back-reflection and effectively guiding light from a light source to an optical waveguide is disclosed. The module comprises a light source for emitting light to said optical waveguide and at least one light transmitting element installed between said light source and said optical waveguide. The at least one light transmitting element is arranged to have a configuration for avoiding light to reflect back to the light source and to cause a light beam from said light source to point to said core of said optical waveguide. Thereby, the working distance is increased, and the assembling process of the OSA module is simplified. This new optical design scheme will greatly improve the optical characteristics of an OSA module, increase the optical transceiver propagation distance, and reduce the difficulty of OSA assembly process.

Abstract: An optical sub-assembly (OSA) module for suppressing optical back-reflection and effectively guiding light from a light source to an optical waveguide is disclosed. The module comprises a light source for emitting light to said optical waveguide and at least one light transmitting element installed between said light source and said optical waveguide. The at least one light transmitting element is arranged to have a configuration for avoiding light to reflect back to the light source and to cause a light beam from said light source to point to said core of said optical waveguide. Thereby, the working distance is increased, and the assembling process of the OSA module is simplified. This new optical design scheme will greatly improve the optical characteristics of an OSA module, increase the optical transceiver propagation distance, and reduce the difficulty of OSA assembly process.

Abstract: A Li-ion polymer battery and methods for its fabrication. A first and second layer, of a polymer/particulate material composition, separate and bind each anode and cathode. The polymer of the first layer and its associated solvent differ from the polymer of the second layer and its associated solvent. Solubility requirements are such that the polymer of the first layer is non-soluble in the solvent of the second layer, and the polymer of the second layer is non-soluble in the solvent of the first layer. The polymers and particulate materials of the layers form a porous structure for containing the electrolyte of the battery so as to eliminate the need for a substantial case for enclosing the battery.

Abstract: A Li-ion polymer battery and methods for its fabrication. A first and second layer, of a polymer/particulate material composition, separate and bind each anode and cathode. The polymer of the first layer and its associated solvent differ from the polymer of the second layer and its associated solvent. Solubility requirements are such that the polymer of the first layer is non-soluble in the solvent of the second layer, and the polymer of the second layer is non-soluble in the solvent of the first layer. The polymers and particulate materials of the layers form a porous structure for containing the electrolyte of the battery so as to eliminate the need for a substantial case for enclosing the battery.

Abstract: An improved method for depositing the polysilicon layer from which a gate pedestal is later formed is described. Deposition takes place in two stages. Initially, the conventional deposition temperature of about 630° C. is used. Then, when the intended thickness of polysilicon has been grown, the temperature is ramped down to about 560° C., without interrupting the deposition process, and growth of the film continues to completion. This is followed by a standard doping step using POCl3. Polysilicon films formed in this way have been found to have very smooth surfaces because the topmost layer is less subject to uncontrolled grain growth. As a consequence, dielectric layers obtained by oxidizing such films exhibit superior breakdown voltages.

Abstract: A simplified cleaning method for the removal of particulates and adherent residues resulting from the incorporation of laser identification marks onto silicon wafers is described. The cleaning method consists of first immersing the wafers in a heated ammoniacal/hydrogen peroxide RCA-SC-1 cleaning solution in the presence of megasonic agitation. This is followed by a immersion rinse in de-ionized water heated to at least 50° C. Finally the wafers are subjected to at least three quick-dump rinses in room temperature de-ionized water and dried. It is found that the hot de-ionized water rinse provides adequate removal of chemical residues remaining after the particle dislodging action of the megasonically agitated RCA SC-1 solution to eliminate the need for application of the acidic/hydrogen peroxide RCA SC-2 treatment.

Abstract: A simplified cleaning method for the removal of particulates and adherent residues resulting from the incorporation of laser identification marks onto silicon wafers is described. The cleaning method consists of first immersing the wafers in a heated ammoniacal/hydrogen peroxide RCA-SC-1 cleaning solution in the presence of megasonic agitation. This is followed by a immersion rinse in de-ionized water heated to at least 50° C. Finally the wafers are subjected to at least three quick-dump rinses in room temperature de-ionized water and dried. It is found that the hot de-ionized water rinse provides adequate removal of chemical residues remaining after the particle dislodging action of the megasonically agitated RCA SC-1 solution to eliminate the need for application of the acidic/hydrogen peroxide RCA SC-2 treatment.

Abstract: Crystalline lithiated transition metal oxide materials having a rhombohedral R-3m crystal structure includes divalent cations selected and added in amounts so that all or a portion of the divalent cations occupy sites in transition metal atom layers within the materials' crystal lattice. The lithiated transition metal oxides are useful as cathode materials in lithium-ion secondary cells. The materials include, but are not limited to, Li.sub.1+x Ni.sub.1-y M.sub.y N.sub.x O.sub.2(1+x) and Li.sub.1 Ni.sub.1-y M.sub.y N.sub.x O.sub.p, wherein M is a transition metal selected from titanium, vanadium, chromium, manganese, iron, cobalt, and aluminum, and N is a group II element selected from magnesium, calcium, strontium, barium, and zinc. The materials provide improved cyclability and high voltage capacity as cathodes in lithium-ion secondary cells. Processes for producing the divalent cation-containing lithium transition metal oxide materials of the invention are also disclosed.

Abstract: An improved method for depositing the polysilicon layer from which a gate pedestal is later formed is described. Deposition takes place in two stages. Initially, the conventional deposition temperature of about 630.degree. C. is used. Then, when the intended thickness of polysilicon has been grown, the temperature is ramped down to about 560.degree. C., without interrupting the deposition process, and growth of the film continues to completion. This is followed by a standard doping step using POCl.sub.3. Polysilicon films formed in this way have been found to have very smooth surfaces because the topmost layer is less subject to uncontrolled grain growth. As a consequence, dielectric layers obtained by oxidizing such films exhibit superior breakdown voltages.