Patents by Inventor Chun-Chieh Chuang
Chun-Chieh Chuang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8390089Abstract: Provided is a back side illuminated image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the front side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a deep trench isolation feature that is disposed adjacent to the radiation-detection device. The image sensor device further includes a doped layer that at least partially surrounds the deep trench isolation feature in a conformal manner.Type: GrantFiled: July 27, 2010Date of Patent: March 5, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Szu-Ying Chen, Chun-Chieh Chuang, Jen-Cheng Liu, Dun-Nian Yaung
-
Publication number: 20130020662Abstract: Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second portion. The method includes bonding the first portion of the second substrate to the first substrate. The method includes after the bonding, removing the second portion of the second substrate. The method includes after the removing, forming one or more microelectronic devices in the first portion of the second substrate. The method includes forming an interconnect structure over the first portion of the second substrate, the interconnect structure containing interconnect features that are electrically coupled to the microelectronic devices.Type: ApplicationFiled: July 18, 2011Publication date: January 24, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Min-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Chun-Chieh Chuang, Wen-De Wang
-
Publication number: 20120280346Abstract: The present disclosure provides various embodiments of an image sensor device. An exemplary image sensor device includes an image sensing region disposed in a substrate; a multilayer interconnection structure disposed over the substrate; and a color filter formed in the multilayer interconnection structure and aligned with the image sensing region. The color filter has a length and a width, where the length is greater than the width.Type: ApplicationFiled: July 16, 2012Publication date: November 8, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTDInventors: Jhy-Ming Hung, Jen-Cheng Liu, Dun-Nian Yaung, Chun-Chieh Chuang
-
Publication number: 20120280348Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the first side. The substrate has a pixel region and a periphery region. The image sensor device includes a plurality of radiation-sensing regions disposed in the pixel region of the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes a reference pixel disposed in the periphery region. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers. The image sensor device includes a film formed over the back side of the substrate. The film causes the substrate to experience a tensile stress. The image sensor device includes a radiation-blocking device disposed over the film.Type: ApplicationFiled: May 2, 2011Publication date: November 8, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Keng-Yu CHOU, Dun-Nian YAUNG, Jen-Cheng LIU, Pao-Tung CHEN, Wen-De WANG, Chun-Chieh CHUANG, Min-Feng KAO
-
Publication number: 20120273914Abstract: Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.Type: ApplicationFiled: July 10, 2012Publication date: November 1, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wen-De Wang, Dun-Nian Yaung, Jen-Cheng Liu, Chun-Chieh Chuang, Jeng-Shyan Lin
-
Patent number: 8293122Abstract: A method for fabricating a semiconductor device with improved bonding ability is disclosed. The method comprises providing a substrate having a front surface and a back surface; forming one or more sensor elements on the front surface of the substrate; forming one or more metallization layers over the front surface of the substrate, wherein forming a first metallization layer comprises forming a first conductive layer over the front surface of the substrate; removing the first conductive layer from a first region of the substrate; forming a second conductive layer over the front surface of the substrate; and removing portions of the second conductive layer from the first region and a second region of the substrate, wherein the first metallization layer in the first region comprises the second conductive layer and the first metallization layer in the second region comprises the first conductive layer and the second conductive layer.Type: GrantFiled: January 21, 2009Date of Patent: October 23, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Jyh-Ming Hung, Pao-Tung Chen
-
Patent number: 8227288Abstract: Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.Type: GrantFiled: March 30, 2009Date of Patent: July 24, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-De Wang, Dun-Nian Yaung, Jen-Cheng Liu, Chun-Chieh Chuang, Jeng-Shyan Lin
-
Patent number: 8222710Abstract: The present disclosure provides an image sensor semiconductor device. The image sensor semiconductor device includes an image sensor disposed in a semiconductor substrate, an inter-level dielectric (ILD) layer disposed on the semiconductor substrate, inter-metal-dielectric (IMD) layers and multi-layer interconnects (MLI) formed on the ILD layer, and a color filter formed in at least one of the IMD layers and overlying the image sensor.Type: GrantFiled: June 12, 2009Date of Patent: July 17, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jhy-Ming Hung, Jen-Cheng Liu, Dun-Nian Yaung, Chun-Chieh Chuang
-
Patent number: 8218475Abstract: A transmitting power level control method and system are provided, whereby the power of a terminal device in a wireless sensor network is saved and the lifetime thereof is extended. The control method includes the steps of: (A) broadcasting a plurality of transmitting power level (TPL) messages, each of which represents a respective TPL and the respective TPLs are different from one another, wherein each of the plurality of TPL messages is broadcasted at the respective TPL thereof; and (B) setting a TPL for the terminal device at a minimum one of the TPLs represented by the TPL messages received by the terminal device.Type: GrantFiled: March 26, 2009Date of Patent: July 10, 2012Assignee: Industrial Technology Research InstituteInventors: Jin-Shyan Lee, Chun-Chieh Chuang
-
Patent number: 8202791Abstract: A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first hard mask layer over the substrate; patterning the first hard mask layer to form one or more first openings having a first critical dimension; performing a first implantation process on the substrate; forming a second hard mask layer over the first hard mask layer to form one or more second openings having a second critical dimension; and performing a second implantation process.Type: GrantFiled: March 16, 2009Date of Patent: June 19, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Jeng-Shyan Lin, Wen-De Wang
-
Patent number: 8164124Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate; a first epitaxy semiconductor layer disposed on the semiconductor substrate and having a first type of dopant and a first doping concentration; a second epitaxy semiconductor layer disposed over the first epitaxy semiconductor layer and having the first type of dopant and a second doping concentration less than the first doping concentration; and an image sensor on the second epitaxy semiconductor layer.Type: GrantFiled: May 22, 2007Date of Patent: April 24, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jen-Cheng Liu, Dun-Nian Yaung, Jyh-Ming Hung, Wen-De Wang, Chun-Chieh Chuang
-
Publication number: 20120025199Abstract: Provided is a back side illuminated image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the front side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a deep trench isolation feature that is disposed adjacent to the radiation-detection device. The image sensor device further includes a doped layer that at least partially surrounds the deep trench isolation feature in a conformal manner.Type: ApplicationFiled: July 27, 2010Publication date: February 2, 2012Applicant: Taiwan Semiconductor Manufacturing Company, LtdInventors: Szu-Ying Chen, Chun-Chieh Chuang, Jen-Cheng Liu, Dun-Nian Yaung
-
Publication number: 20120007156Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.Type: ApplicationFiled: September 21, 2011Publication date: January 12, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Chieh Chuang, Chin-Min Lin, Ken Wen-Chien Fu, Dun-Nian Yaung
-
Publication number: 20110298072Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.Type: ApplicationFiled: June 4, 2010Publication date: December 8, 2011Applicant: Taiwan semiconductor manufacturing company, Ltd.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Keng-Yu Chou, Wen-De Wang, Pao-Tung Chen
-
Publication number: 20110260280Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystalized silicon layer is formed on the back side of the substrate. The recrystalized silicon layer has different photoluminescence intensity than the substrate.Type: ApplicationFiled: April 23, 2010Publication date: October 27, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Yeur-Luen Tu, Jen-Cheng Liu, Keng-Yu Chou, Chung Chien Wang
-
Patent number: 8030114Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.Type: GrantFiled: April 10, 2007Date of Patent: October 4, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Chieh Chuang, Chin-Min Lin, Ken Wen-Chien Fu, Dun-Nian Yaung
-
Patent number: 7968424Abstract: Provided is a method of implanting dopant ions to an integrated circuit. The method includes forming a first pixel and a second pixel in a substrate, forming an etch stop layer over the substrate, forming a hard mask layer over the etch stop layer, patterning the hard mask layer to include an opening between the first pixel and the second pixel, and implanting a plurality of dopants through the opening to form an isolation feature.Type: GrantFiled: January 16, 2009Date of Patent: June 28, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Chun-Chieh Chuang, Pao-Tung Chen, Wen-De Wang, Jyh-Ming Hung
-
Patent number: 7927301Abstract: A safety syringe includes an outer barrel, a needle unit, an outer barrel plug, an inner barrel, an inner barrel plug, a needle clamper, and a vacuum generating device. The needle unit is disposed within the front end of the outer barrel. The outer barrel plug is disposed within the outer barrel; the outer barrel plug is connected with the needle unit so as to fix the needle unit. The inner barrel plug is disposed within the front end of the inner barrel. The needle clamper is connected with the inner barrel plug. The needle clamper is able to clamp a rear opening of the needle unit. The vacuum generating device is disposed within the inner barrel, and the needle unit can be retracted into the inner barrel by the low pressure which is generated by the vacuum generating device.Type: GrantFiled: April 3, 2009Date of Patent: April 19, 2011Inventors: Hsi-Hsun Tseng, Chih-Ming Wang, Po-Liang Lee, Chun-Chieh Chuang
-
Publication number: 20110049589Abstract: A backside illuminated image sensor includes a semiconductor substrate having a front side and backside, a sensor element formed overlying the frontside of the semiconductor substrate, and a capacitor formed overlying the sensor element.Type: ApplicationFiled: June 22, 2010Publication date: March 3, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Chieh CHUANG, Dun-Nian YAUNG, Jen-Cheng LIU, Jeng-Shyan LIN, Wen-De WANG
-
Publication number: 20100252870Abstract: Embodiments of the invention relate to dual shallow trench isolations (STI). In various embodiments related to CMOS Image Sensor (CIS) technologies, the dual STI refers to one STI structure in the pixel region and another STI structure in the periphery or logic region. The depth of each STI structure depends on the need and/or isolation tolerance of devices in each region. In an embodiment, the pixel region uses NMOS devices and the STI in this region is shallower than that of in the periphery region that includes both NMOS and PMOS device having different P- and N-wells and that desire more protective isolation (i.e., deeper STI). Depending on implementations, different numbers of masks (e.g., two, three) are used to generate the dual STI, and are disclosed in various method embodiments.Type: ApplicationFiled: March 31, 2010Publication date: October 7, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jeng-Shyan LIN, Dun-Nian YAUNG, Jen-Cheng LIU, Chun-Chieh CHUANG, Volume CHIEN