Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

Abstract: A photolithography model used in an optical proximity correction process modifies an image output intensity of a point disposed along a two dimensional plane and having coordinates (x,y) in accordance with a gradient of a convolution of a mask value at the point and a sampling pattern function selected at the point. The sampling pattern function includes, in part, a first subset of sampling patterns and a second subset of sampling patterns. The first subset of sampling patterns includes first and second nodes. The second subset of sampling patterns include first and second antinodes. The gradient of the convolution of the mask value and the first and second nodes of the first subset are scaled by a first coefficient. The gradient of the convolution of the mask value and the first and second antinodes of the second subset are scaled by a second coefficient.

Abstract: A flicker-free linear LED drive circuit is disclosed. The flicker-free linear LED drive circuit converts the input voltage of the external power supply to form an output current to the LED. The flicker-free linear LED drive circuit includes a measuring module, a regulating module and a rectifier module. The flicker-free linear LED drive circuit is characterized in that the measuring module is configured to measure the phase angle of the input voltage after full-wave rectification; the regulating module is used to form the complex voltage signal according to the measurement signal in the voltage waveform of the regulating module for the half-wave period, the conduction angle range formed at the fixed power is used as the basis for electrical conduction in the half-wave period of the input voltage.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

Abstract: A garbage collection method for a data storage device includes steps of: entering a background mode from a foreground mode; selecting a plurality of source data blocks from a plurality of in-use data blocks; dividing a mapping table into a plurality of sub-mapping tables and selecting one of the sub-mapping tables as a target sub-mapping table, wherein the target sub-mapping table is used to manage one of the source data blocks; selecting a destination data block from a plurality of spare data blocks; and sequentially updating a correspondence relationship of data stored in the target sub-mapping table from the source data blocks to the destination data block, wherein the updating comprises copying the data stored in the source data blocks to the destination data block.

Abstract: A garbage collection method for a data storage device includes steps of: entering a background mode from a foreground mode; selecting a plurality of source data blocks from a plurality of in-use data blocks; dividing a mapping table into a plurality of sub-mapping tables and selecting one of the sub-mapping tables as a target sub-mapping table, wherein the target sub-mapping table is used to manage one of the source data blocks; selecting a destination data block from a plurality of spare data blocks; and sequentially updating a correspondence relationship of data stored in the target sub-mapping table from the source data blocks to the destination data block, wherein the updating comprises copying the data stored in the source data blocks to the destination data block.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode.

Abstract: A photolithography model used in an optical proximity correction process modifies an image output intensity of a point disposed along a two dimensional plane and having coordinates (x,y) in accordance with a gradient of a convolution of a mask value at the point and a sampling pattern function selected at the point. The sampling pattern function includes, in part, a first subset of sampling patterns and a second subset of sampling patterns. The first subset of sampling patterns includes first and second nodes. The second subset of sampling patterns include first and second antinodes. The gradient of the convolution of the mask value and the first and second nodes of the first subset are scaled by a first coefficient. The gradient of the convolution of the mask value and the first and second antinodes of the second subset are scaled by a second coefficient.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

Abstract: A garbage collection method for a data storage device includes steps of: entering a background mode from a foreground mode; selecting a plurality of source data blocks from a plurality of in-use data blocks; dividing a mapping table into a plurality of sub-mapping tables and selecting one of the sub-mapping tables as a target sub-mapping table, wherein the target sub-mapping table is used to manage one of the source data blocks; selecting a destination data block from a plurality of spare data blocks; and sequentially updating a correspondence relationship of data stored in the target sub-mapping table from the source data blocks to the destination data block, wherein the updating comprises copying the data stored in the source data blocks to the destination data block.

Abstract: A high performance linear driving circuit converting an AC voltage of an external power supply into a DC output current and then outputs the DC current to at least one LED includes a detection unit, a control unit and a current unit. In a 180-degree phase sine wave period of the AC voltage, the total current of the output current is formed by a first working section, an energy saving section and a second working section, and the detection unit detects at least a voltage value of the AC voltage or a current value of the output current to generate a detection signal, and drives the control unit to modulate the duty cycle and current value of the first working section, energy saving section and second working section, and the amounts of current of the first and second working sections are greater than that of the energy saving section.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

Abstract: A self-excited power conversion circuit for secondary side control output power includes a comparator unit and a transistor installed directly in a secondary side output module, and the comparator unit is electrically coupled to at least one load, and the transistor is electrically coupled between to a conversion module of the circuit and the load. The comparator unit is provided for adjusting the duty cycle of the transistor after detecting the amount of energy outputted from the conversion module to the load from, so as to adjust the amount of energy actually received by the load to achieve a constant power effect.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.