Abstract: A display device includes an in-cell touch display panel, a flexible printed circuit board, and a source driver. The in-cell touch display panel includes touch sensing electrodes, touch sensing pins, pixel electrodes, and source pins. The touch sensing pins are electrically connected to the touch sensing electrodes. The source pins are electrically connected to the pixel electrodes. The flexible circuit board includes dummy pads, touch sensing leads, input pads, output pads, and output signal leads. The touch sensing leads are electrically connected to the dummy pads and the touch sensing pins. The output signal leads are electrically connected to the output pads and the source pins. The source driver includes input terminals and output terminals. The input terminals are electrically connected to the input pads. The output terminals are electrically connected to the output pads. The source driver does not include a touch sensing terminal.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a MRAM region of a substrate, forming a first inter-metal dielectric (IMD) layer around the MTJ, forming a patterned mask on a logic region of the substrate, performing a nitridation process to transform part of the first IMD layer to a nitride layer, forming a first metal interconnection on the logic region, forming a stop layer on the first IMD layer, forming a second IMD layer on the stop layer, and forming a second metal intercom in the second IMD layer to connect to the MTJ.

Abstract: A method for skin protection by applying a zinc oxide-on-silicate platelet composite (ZnO/NSP composite) is formulated in a cosmetic composition, to the skin of a subject. The ZnO/NSP composite is made of silicate platelet and ZnO particles adsorbed thereon, in which the ZnO particles are created by the dehydration of Zn(OH)2 formed on the silicate platelet. The ZnO particles adhering on the silicate platelet can effectively improve the dispersibility of zinc oxide particles in water, and the average particle size can reach near nanometer size. Moreover, the ZnO/NSP composite exhibits better antimicrobial and UV light-absorbing properties than ZnO itself, and are not toxic or irritating to the skin.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.

Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: Various solutions for reporting aggregated bandwidth capability with respect to an apparatus in mobile communications are described. The apparatus may transmit a plurality of capability signaling of aggregated bandwidth in band combination level to a network node. Each of capability signaling of aggregated bandwidth may indicate a maximum aggregated bandwidth across component carriers. The apparatus may transmit a feature set per component-carrier, which includes channel bandwidths, to the network node for determining a channel bandwidth configuration set according to the plurality of capability signaling of aggregated bandwidth and the feature set per component-carrier. The apparatus may communicate with the network node based on the channel bandwidth configuration set.

Abstract: A User Equipment (UE) including a wireless transceiver and a controller is provided. The wireless transceiver performs wireless transmission and reception to and from a first service network utilizing a first RAT or a second service network utilizing a second RAT. The controller sends an indicator of a connection release request to the first service network via the wireless transceiver in response to terminating a first communication service with the first service network or in response to leaving the first service network for the second service network. Also, the controller releases a Radio Resource Control (RRC) connection with the first service network after sending the indicator of the connection release request.

Abstract: A biological hair shape change composition including a macromolecular component, a small molecular component and an alkali agent component is provided. The macromolecular component includes a protease belonging to the class of alkaline proteases, and the small molecular component includes a peptide with reduction activity. Both the macromolecular component and the small molecular component are obtained from a fermentation product of Bacillus licheniformis and a keratin and/or keratin polymer-containing medium. Molecular weights of ingredients in the macromolecular component are greater than or equal to 3 kDa and are 3-1000 kDa, and molecular weights of ingredients in the small molecular component are less than 3 kDa and are 0.01-2.99 kDa.

Abstract: A display device includes an in-cell touch display panel, a flexible printed circuit board, and a source driver. The in-cell touch display panel includes touch sensing electrodes, touch sensing pins, pixel electrodes, and source pins. The touch sensing pins are electrically connected to the touch sensing electrodes. The source pins are electrically connected to the pixel electrodes. The flexible circuit board includes dummy pads, touch sensing leads, input pads, output pads, and output signal leads. The touch sensing leads are electrically connected to the dummy pads and the touch sensing pins. The output signal leads are electrically connected to the output pads and the source pins. The source driver includes input terminals and output terminals. The input terminals are electrically connected to the input pads. The output terminals are electrically connected to the output pads. The source driver does not include a touch sensing terminal.

Abstract: A recyclable crosslinked polymeric foam includes a reaction product of 0.1 to 10 parts by weight of a crosslinking agent and 0.1 to 5 parts by weight of a radical initiator, based on 100 parts by weight of a polymeric material. The crosslinking agent is represented by the following formula: wherein R is an alkylene group having 2 to 10 carbon atoms, an arylene group having 6 to 18 carbon atoms, or a cycloalkylene group having 6 to 18 carbon atoms.

Abstract: A method of managing access to a first memory via a second memory includes autonomously copying data from one or more of the data blocks in the first plurality of data blocks in the first memory to corresponding one or more of the data blocks in the second plurality of data blocks in the second memory sequentially. Access to the first memory with a first plurality of data blocks is at a first speed and access to the second memory with a second plurality of data blocks is at a second speed. A command is received for reading from the second memory. Responsive to receiving the command, a pointer is obtained indicating an address of a data block in the second memory that contains data copied from the first memory and that is first available for access. The data is obtained from the data block based on the pointer.

Abstract: Methods and apparatus are provided for UE-triggered handover and early preparation with coexistence of the network-triggered handover. In one novel aspect, the UE is configured early measurement report configuration, receives an early handover command from the serving base station with a handover candidate cell list, monitors handover triggering conditions for each candidate cell on the handover candidate cell list based on a UE-triggered handover configuration and performs the UE-triggered handover to a candidate cell when the corresponding triggering condition is met for the candidate cell. In one embodiment, the UE receives a network-triggered handover command to a target cell, suspends the UE-triggered handover configuration and performs the network-triggered handover to the target cell. The UE discards the UE-triggered handover configuration upon success of the network-triggered handover and resumes the UE-triggered handover configuration upon failure of the network-triggered handover.

Abstract: A method of manufacturing a hybrid random access memory in a system-on-chip, including steps of providing a semiconductor substrate with a magnetoresistive random access memory (MRAM) region and a resistive random-access memory (ReRAM) region, forming multiple ReRAM cells in the ReRAM region on the semiconductor substrate, forming a first dielectric layer on the semiconductor substrate, wherein the ReRAM cells are in the first dielectric layer, forming multiple MRAM cells in the MRAM region on the first dielectric layer, and forming a second dielectric layer on the first dielectric layer, wherein the MRAM cells are in the second dielectric layer.

Abstract: Methods and apparatus are provided for UE-triggered handover and early preparation with coexistence of the network-triggered handover. In one novel aspect, the UE is configured early measurement report configuration, receives an early handover command from the serving base station with a handover candidate cell list, monitors handover triggering conditions for each candidate cell on the handover candidate cell list based on a UE-triggered handover configuration and performs the UE-triggered handover to a candidate cell when the corresponding triggering condition is met for the candidate cell. In one embodiment, the UE receives a network-triggered handover command to a target cell, suspends the UE-triggered handover configuration and performs the network-triggered handover to the target cell. The UE discards the UE-triggered handover configuration upon success of the network-triggered handover and resumes the UE-triggered handover configuration upon failure of the network-triggered handover.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.

Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts top surfaces of the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.

Abstract: Examples pertaining to secure transmission in mobile communications are described. A UE receives an RRC reconfiguration message from a master network node. The RRC reconfiguration message comprises information regarding candidate cells and predefined reconfigurations, and each candidate cell is associated with one predefined reconfiguration. The UE evaluates a triggering condition for at least one candidate cell to determine whether to trigger a conditional cell change procedure and performs the conditional cell change procedure to switch a PSCell associated with the apparatus to a target cell in an event that the triggering condition for the target cell is met. The UE derives a security key according to a counter value and a key of the master network node. The counter value is obtained from a sequence of distinct counter values of the target cell or of a target secondary node stored by the processor or is generated by the processor.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a UE. In certain configurations, the UE enters a first radio resource control (RRC) connection with a first base station of a first network. The UE receives, from the first base station, an indication that enables the UE to send a first request for deactivating or releasing resources used for communications with the first base station. In response to a determination to enter a second RRC connection with a second base station of a second network, the UE sends, to the first base station, the first request for deactivating or releasing the resources. The UE enters the second RRC connection with the second base station while maintaining the first RRC connection with the first base station.

Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: A hybrid random access memory for a system-on-chip (SOC), including a semiconductor substrate with a MRAM region and a ReRAM region, a first dielectric layer on the semiconductor substrate, multiple ReRAM cells in the first dielectric layer on the ReRAM region, a second dielectric layer above the first dielectric layer, and multiple MRAM cells in the second dielectric layer on the MRAM region.