Abstract: A method of manufacturing a hybrid random access memory in a system-on-chip, including steps of providing a semiconductor substrate with a magnetoresistive random access memory (MRAM) region and a resistive random-access memory (ReRAM) region, forming multiple ReRAM cells in the ReRAM region on the semiconductor substrate, forming a first dielectric layer on the semiconductor substrate, wherein the ReRAM cells are in the first dielectric layer, forming multiple MRAM cells in the MRAM region on the first dielectric layer, and forming a second dielectric layer on the first dielectric layer, wherein the MRAM cells are in the second dielectric layer.

Abstract: Methods and apparatus are provided for UE-triggered handover and early preparation with coexistence of the network-triggered handover. In one novel aspect, the UE is configured early measurement report configuration, receives an early handover command from the serving base station with a handover candidate cell list, monitors handover triggering conditions for each candidate cell on the handover candidate cell list based on a UE-triggered handover configuration and performs the UE-triggered handover to a candidate cell when the corresponding triggering condition is met for the candidate cell. In one embodiment, the UE receives a network-triggered handover command to a target cell, suspends the UE-triggered handover configuration and performs the network-triggered handover to the target cell. The UE discards the UE-triggered handover configuration upon success of the network-triggered handover and resumes the UE-triggered handover configuration upon failure of the network-triggered handover.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.

Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts top surfaces of the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.

Abstract: Examples pertaining to secure transmission in mobile communications are described. A UE receives an RRC reconfiguration message from a master network node. The RRC reconfiguration message comprises information regarding candidate cells and predefined reconfigurations, and each candidate cell is associated with one predefined reconfiguration. The UE evaluates a triggering condition for at least one candidate cell to determine whether to trigger a conditional cell change procedure and performs the conditional cell change procedure to switch a PSCell associated with the apparatus to a target cell in an event that the triggering condition for the target cell is met. The UE derives a security key according to a counter value and a key of the master network node. The counter value is obtained from a sequence of distinct counter values of the target cell or of a target secondary node stored by the processor or is generated by the processor.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a UE. In certain configurations, the UE enters a first radio resource control (RRC) connection with a first base station of a first network. The UE receives, from the first base station, an indication that enables the UE to send a first request for deactivating or releasing resources used for communications with the first base station. In response to a determination to enter a second RRC connection with a second base station of a second network, the UE sends, to the first base station, the first request for deactivating or releasing the resources. The UE enters the second RRC connection with the second base station while maintaining the first RRC connection with the first base station.

Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: A hybrid random access memory for a system-on-chip (SOC), including a semiconductor substrate with a MRAM region and a ReRAM region, a first dielectric layer on the semiconductor substrate, multiple ReRAM cells in the first dielectric layer on the ReRAM region, a second dielectric layer above the first dielectric layer, and multiple MRAM cells in the second dielectric layer on the MRAM region.

Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.

Abstract: A method of L1/L2-based mobility with signaling optimization using base (reference) configuration and replaceable (delta) configuration for candidate cells is proposed. All candidates can be configured at different levels provided by Radio Resource Control (RRC) signaling. To support L1/L2-triggered mobility (LTM), there is a common base configuration for candidates, and the candidates are modelled as replaceable configurations which are delta configurations on top of the common base configuration (instead of UE's current RRC configuration). The common and replaceable configurations are also referred to as reference configuration and candidate delta configuration. The candidate delta configuration is applied on top of the reference configuration to form a complete candidate configuration for handover.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.

Abstract: Aspects of the disclosure provide a method to activate secondary cell group (SCG) selectively. For example, the method can include receiving a radio resource control (RRC) reconfiguration message including first and second radio resource configurations of first and second primary secondary cells (PSCells) and conditional PSCell addition (CPA) and conditional PSCell change (CPC) triggering conditions, setting a current triggering condition to be the CPA triggering condition, evaluating the current triggering condition and determining that the first PSCell satisfies the current triggering condition, and performing a CPA step to add the first PSCell as a current SCG, updating the current triggering condition to be the CPC triggering condition, the UE still keeping the first and second radio resource configurations and the CPA and CPC triggering conditions for subsequent CPC step, without releasing the second radio resource configuration and the CPA and CPC triggering conditions associated with the second PSCell.

Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: A User Equipment (UE) including a wireless transceiver and a controller is provided. The wireless transceiver performs wireless transmission and reception to and from a first service network utilizing a first RAT or a second service network utilizing a second RAT. The controller sends an indicator of a connection release request to the first service network via the wireless transceiver in response to terminating a first communication service with the first service network or in response to leaving the first service network for the second service network. Also, the controller releases a Radio Resource Control (RRC) connection with the first service network after sending the indicator of the connection release request.

Abstract: Provided are a resistive random access memory and a manufacturing method thereof. The resistive random access memory includes a substrate having a pillar protruding from a surface of the substrate, a gate surrounding a part of a side surface of the pillar, a gate dielectric layer, a first electrode, a second electrode, a variable resistance layer, a first doped region and a second doped region. The gate dielectric layer is disposed between the gate and the pillar. The first electrode is disposed on a top surface of the pillar. The second electrode is disposed on the first electrode. The variable resistance layer is disposed between the first electrode and the second electrode. The first doped region is disposed in the pillar below the gate and in a part of the substrate below the pillar. The second doped region is disposed in the pillar between the gate and the first electrode.

Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts top surfaces of the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.

Abstract: A User Equipment (UE) including a wireless transceiver and a controller is provided. The wireless transceiver performs wireless transmission and reception to and from a first service network utilizing a first RAT or a second service network utilizing a second RAT. The controller sends an indicator of a connection release request to the first service network via the wireless transceiver in response to terminating a first communication service with the first service network or in response to leaving the first service network for the second service network. Also, the controller releases a Radio Resource Control (RRC) connection with the first service network after sending the indicator of the connection release request.

Abstract: A memory array includes at least one strap region having therein a plurality of source line straps and a plurality of word line straps, and at least two sub-arrays having a plurality of staggered, active magnetic storage elements. The at least two sub-arrays are separated by the strap region. A plurality of staggered, dummy magnetic storage elements is disposed within the strap region.

Abstract: A method for expediting Secondary Cell (SCell) activation is proposed. Under the proposed enhanced direct SCell activation procedure, while adding an SCell to be activated state, the network can add transmission configuration indication (TCI) state information for the SCell in a radio resource control (RRC) signaling message, in addition to TCI state information for a list of candidate TCI states. Upon receiving the RRC signaling message, UE adds the SCell accordingly, and then activates the SCell based on the received TCI state information. Because there is no additional time required for receiving and processing the TCI state information via a media access control (MAC) control element (CE), the SCell activation time is reduced.

Abstract: A method for expediting Secondary Cell (SCell) or Primary cell of a secondary cell group (PSCell) addition or activation is proposed. A User Equipment (UE) receives a command that indicates adding or activating an SCell or a PSCell, wherein the command comprises information of a temporary Reference Signal (RS). The UE detects the temporary RS according to the information, and uses the temporary RS to add or activate the SCell or the PSCell.