Abstract: A light-emitting device includes a substrate, a light-emitting diode, a first layer, a color filter layer, and a second layer. The light-emitting diode is disposed on the substrate. The first layer is disposed on the substrate and has an opening. At least a portion of the light-emitting diode is disposed in the opening of the first layer. The color filter layer is disposed on the light-emitting diode. The second layer is disposed on the first layer and has an opening overlapped with the opening of the first layer. The second layer is configured to shield light emitted from the light-emitting diode. In the cross-sectional view of the light-emitting device, the minimum width of the opening of the first layer is less than the minimum width of the opening of the second layer.

Abstract: A machine learning (ML) computer model is trained on a dual-modal input sequence comprising target content data and an input user query specifying attributes for locating a portion within the target content data. The ML computer model is trained to process the dual-modal input sequence and output an output text specifying start and end indices, within the target content data, corresponding to the portion. Runtime content data, and a user spoken query, are received and the runtime content data and user spoken query are processed via the trained ML computer model to generate an output text specifying a predicted beginning index and predicted ending index within the runtime content data. The portion of the runtime content data corresponding to a range of runtime content data bounded by the beginning index and ending index, inclusively, is retrieved and stored for later retrieval and processing.

Abstract: A method of forming a semiconductor device includes performing a first implantation process on a semiconductor substrate to form a deep p-well region, performing a second implantation process on the semiconductor substrate with a diffusion-retarding element to form a co-implantation region, and performing a third implantation process on the semiconductor substrate to form a shallow p-well region over the deep p-well region. The co-implantation region is spaced apart from a top surface of the semiconductor substrate by a portion of the shallow p-well region, and the deep p-well region and the shallow p-well region are joined with each other. An n-type Fin Field-Effect Transistor (FinFET) is formed, with the deep p-well region and the shallow p-well region acting as a well region of the n-type FinFET.

Abstract: Systems and techniques are provided for processing one or more images. For instance, aspects include a process that can include determining a first region of interest corresponding to a first object depicted in an image obtained using at least one camera. The first region of interest is associated with at least one element of a multi-point grid associated with a multi-point depth sensing system. The process can include determining a first extended region of interest for the first object. The first extended region of interest is associated with a plurality of elements including the at least one element and one or more additional elements of the multi-point grid. The process can further include, based on the plurality of elements associated with the first extended region of interest, determining representative depth information representing a first distance between the at least one camera and the first object depicted in the image.

Abstract: The instant disclosure provides a gate device and an umbrella sharing system which utilizes the gate device. The gate device includes a base, an actuator, a pair of gate plates, and an identification sensor. The actuator is disposed on a top surface of the base and includes a latch extending downward through the base. The pair of gate plates are disposed on a bottom surface of the base, and each of the gate plates includes a guiding structure and a locking structure. A waiting zone for receiving an umbrella is defined between the two guiding structures. The latch of the actuator is driven to engage with the locking structures to limit the movement of the gate plates. The identification sensor is above the waiting zone and disposed on the base and is configured to identify the identity of an umbrella which enters the waiting zone.

Abstract: A filtration and purification device includes a main body and one or more filtration passage layer. A plurality of purification chambers is disposed in the filtration passage layer. Each of the purification chambers has a flow-guiding unit, a filtration unit, a gas sensor, and an outlet valve. The flow-guiding unit introduces the gas into the purification chamber, the filtration unit filters the gas, and the gas sensor determines that if the filtered gas reaches a threshold for breathing so as to determine to open the outlet valve to discharge the gas out of the filtration and purification device.

Abstract: A semiconductor device includes a substrate having a major surface. The semiconductor device includes a dielectric material having a uniform thickness on the major surface of the substrate. The semiconductor device includes a first plurality of fins extending from the major surface of the substrate, wherein each fin of the first plurality of fins has a first height from the major surface of the substrate. The semiconductor device includes a second plurality of fins extending from the major surface of the substrate, wherein a first fin of the second plurality of fins is on a first side of the first plurality of fins, a second fin of the second plurality of fins is on a second side of the first plurality of fins opposite the first side, each fin of the second plurality of fins has a second height different from the first height.

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor die and surrounding a sidewall of the semiconductor die with a dielectric material. The method further includes forming a post passivation interconnect (PPI) over the semiconductor die and electrically coupling the PPI with the semiconductor die. The method further includes molding the semiconductor die and the PPI into an integrated semiconductor package. The method further includes covering at least a portion of an outer surface of the integrated semiconductor package with a conductive layer, wherein the conductive layer is conformal to the morphology of the portion of the outer surface. Moreover, the method further includes forming a conductive path inside the integrated semiconductor package electrically coupled to the conductive layer and a ground terminal of the integrated semiconductor package.

Abstract: Techniques and systems are provided for improving one or more image capture operations. In some examples, a system determines, based on data from one or more sensors, a movement of an image capture device associated with a capture of a plurality of image frames. The systems adjust a position of at least one object in each of the plurality of image frames based on the movement of the image capture device. The system determines a motion of the at least one object based on a difference in the adjusted position among the plurality of image frames. The system selects a value for at least one image capture parameter associated with the plurality of image frames based on the motion of the at least one object.

Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer is exposed. An organic treatment to the photoresist layer is performed. After performing the organic treatment, the photoresist layer is developed. The material layer is etched using the photoresist layer as a mask.

Abstract: Provided is a ferroelectric memory device having a multi-layer stack disposed over a substrate and including a plurality of conductive layers and a plurality of dielectric layers stacked alternately. A channel layer penetrates through the plurality of conductive layers and the plurality of dielectric layers. A plurality of ferroelectric portions are discretely disposed between the channel layer and the plurality of conductive layers. The plurality of ferroelectric portions are vertically separated from one another by one or more non-zero distances.

Abstract: A button mechanism is provided, including a button element, a magnet connected to the button, a hollow tube, a first coil, and a second coil. The first and second coils are disposed on the tube. When the first coil generates a first magnetic field, the magnet is magnetically attracted by the first coil, and the button element is positioned in the first position. When the second coil generates a second magnetic field, the magnet is attracted by the second coil, and the button element is positioned in the second position.

Abstract: This invention provides a low-temperature semen cryopreservation device, comprising: a box body for containing low-temperature cryoprotectant fluid; a tray, one end of which is pivotally connected to the inner side wall of the box body, and a limiting portion is provided on the tray for limiting the movement of the cryoprotectant tube. Two openings are sequentially arranged along the height direction on one side of the box body relative to the hinge end, with the height of one opening higher than that of the hinge end, and the height of the other opening lower than that of the hinge end; a limiting plate, which can be detachably inserted into either opening. When the limiting plate is switched from one opening to the other, the tray tilts to drive the cryopreservation tube to rotate 180 degrees, thereby ensuring the low-temperature cryoprotectant fluid to evenly fumigate the cryopreservation tube, improving the pre-cooling effect.

Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.

Abstract: Techniques for determining a status of exchange of audio messages between a source computing device and a destination computing device are described. In an example, an audio input is received from a user from a source computing device. A source audio message and a source text file are then generated based on the audio input. The source audio message is then sent to the destination computing device. A destination text file is then received from the source computing device, where the destination text file is generated based on a destination audio message received at the destination computing device, and where the destination audio message is received by the destination computing device corresponding to the source audio message. The source text file is then compared to the destination text file to determine a status of transmission of the source audio message to the destination computing device.

Abstract: This invention provides a low-temperature semen cryopreservation device, comprising: a box body for containing low-temperature cryoprotectant fluid; a tray, one end of which is pivotally connected to the inner side wall of the box body, and a limiting portion is provided on the tray for limiting the movement of the cryoprotectant tube. Two openings are sequentially arranged along the height direction on one side of the box body relative to the hinge end, with the height of one opening higher than that of the hinge end, and the height of the other opening lower than that of the hinge end; a limiting plate, which can be detachably inserted into either opening. When the limiting plate is switched from one opening to the other, the tray tilts to drive the cryopreservation tube to rotate 180 degrees, thereby ensuring the low-temperature cryoprotectant fluid to evenly fumigate the cryopreservation tube, improving the pre-cooling effect.

Abstract: Aspects of the present disclosure relate to systems and methods for image focusing for devices including multiple cameras. An example method includes estimating a focus distance associated with an image captured by a first camera, determining, based at least in part on the estimated focus distance, to switch from the first camera to a second camera, switching from the first camera to the second camera, completing a focusing operation using the second camera and presenting an updated image captured by the second camera.

Abstract: This disclosure provides systems, methods, and devices for image capture and image processing that support capture using a variable aperture (VA) camera. In a first aspect, a method of image processing includes determining a plurality of depths for a scene, the plurality of depths corresponding to a plurality of regions of interest; determining an aperture size for a camera based on the plurality of depths; determining a lens position for the camera based on the aperture size and the plurality of depths; and controlling the camera to adjust a variable aperture (VA) of the camera based on the aperture size and to adjust a lens associated with the variable aperture (VA) based on the lens position. Other aspects and features are also claimed and described.

Abstract: A device and a method for communicating with a link partner device. The device may include a fragmentation unit configured to fragment a packet into multiple fragments if a size of the packet is greater than a maximum fragment size, a packet control header unit configured to generate a packet control header for a packet or each fragment of the packet, and a transceiver configured to send the packet or the fragments of the packet with the packet control header via a connection between the device and the link partner device. The packet control header may include a data flow control field for congestion control between the device and the link partner device, the data flow control field including a configuration parameter indicative of a flow control capability being supported by the device.

Abstract: A head-mounted display includes a display device, a connecting structure and a head abutting portion. The connecting structure is in a shape of strip. The connecting structure has two opposite ends. The ends are respectively connected with the display device. The connecting structure and the display device define an accommodation space. The accommodation space is configured to accommodate a head of a user. The head abutting portion is pivotally connected with the connecting structure. The head abutting portion is at least partially located between the connecting structure and the display device. The head abutting portion is configured to abut against the head of the user.