Abstract: Provided is a model training method, a data processing method and related apparatuses, relating to the technical fields of large model, image processing, and computer vision. The method includes: obtaining a historical process flow card set for spinning process; extracting a handwritten area from each historical process flow card; classifying the handwritten area to obtain a handwritten digit image block and a handwritten text image block; constructing a digit recognition model of different handwritten digit categories based on the handwritten digit image block, to extract a target digit from a newly-added process flow card; and constructing a text recognition model of different handwritten text categories based on the handwritten text image block, to extract a target text from the newly-added process flow card; wherein the target digit and the target text are used to construct a process flow database for the spinning process.

Abstract: A method of transferring semiconductor wafers and a semiconductor wafer support device including lift pins having a first end configured to contact a backside surface of the semiconductor wafer and at least one stress reduction feature. The stress reduction feature may be configured to reduce contact stress between the lift pins and the wafer.

Abstract: This disclosure provides systems, methods, and devices for image signal processing that provide transitioning between cameras of different dynamic range capability. In a first aspect, a method of image processing includes receiving first image data comprising first image frames from a first camera having a first dynamic range capability and second image data comprising second image frames from a second camera having a second dynamic range capability; determining a dynamic range of a representation of a scene in the first image frames satisfies first criteria; when the dynamic range satisfies the first criteria, determining output image frames based on a first image frames and the second image frames by processing the first image frames and the second image frames to determine the output image frames having a transition from the first dynamic range capability to the second dynamic range capability. Other aspects and features are also claimed and described.

Abstract: A method of forming a semiconductor device includes implanting dopants of a first conductivity type into a semiconductor substrate to form a first well, epitaxially growing a channel layer over the semiconductor substrate, forming a fin from the second semiconductor material, and forming a gate structure over a channel region of the fin. The semiconductor substrate includes a first semiconductor material. Implanting the dopants may be performed at a temperature in a range of 150° C. to 500° C. The channel layer may include a second semiconductor material. The channel layer may be doped with dopants of the first conductivity type.

Abstract: This disclosure provides systems, methods, and devices for image processing that support enhanced variable aperture (VA) camera operations. In a first aspect, a method of image processing includes determining first image statistics for first image data representing a first scene captured at a first aperture; and determining whether the first image data satisfies a first criteria. When the first image data satisfies the first criteria, the image processing includes determining an updated lens shading correction (LSC) corresponding to the first aperture based on the first image statistics and on a current LSC corresponding to the first aperture; and determining a first output image frame based on the updated LSC and the first image data. Other aspects and features are also claimed and described.

Abstract: This disclosure provides systems, methods, and devices for image processing. In a first aspect, a method of image processing includes receiving first image data from a first camera of an image capture device, wherein the first camera is different from a second camera of the image capture device; determining a first portion of the first image data; transforming the first portion of the first image data with a first strength based on an alignment difference between the first camera and the second camera; transforming a second portion of the first image data with a second strength based on the alignment difference between the first camera and the second camera; and determining a first output image frame based on the first image data after transforming the first portion of the first image data and transforming the second portion of the first image data. Other aspects and features are also described.

Abstract: Provided is a spinning workshop inspection method, an electronic device and a storage medium, relating to technical fields of computers. The spinning workshop inspection method includes: acquiring first image information of an inspection passage when an inspection robot inspects a first position corresponding to the first spinning box in the inspection passage; determining a second spinning box from spinning boxes when the first image information includes a first detection object; acquiring second image information of the inspection passage when the inspection robot inspects a second position corresponding to the second spinning box in the inspection passage; and determining state information of the first detection object based on the first and second image information.

Abstract: Disclosed are systems, apparatuses, processes, and computer-readable media for processing image data. One illustrative method of processing image data includes: capturing a first image of a subject using a variable aperture lens configured with a first aperture and a first exposure value; capturing a second image of the subject using the variable aperture lens configured with a second aperture and a second exposure value, wherein the second aperture is smaller than the first aperture and the second exposure value is smaller than the first exposure value; and generating a high dynamic range (HDR) image at least in part by fusing the first image and the second image fusing the first image and the second image.

Abstract: Imaging systems and techniques are described. An imaging system receives image data captured by an image sensor according to one or more image capture settings, for instance according to an aperture size, temperature, lux, lens position, and/or region of interest. The image data includes image pixel data and focus pixel data. The imaging system determines a first focus setting based on phase detection using the focus pixel data. The imaging system determines a focus offset based on use of the one or more image capture settings as inputs to a trained model (e.g., decision tree, random forest, neural network). The imaging system determines a second focus setting at least in part by adjusting the first focus setting according to the focus offset, and causes a focus control mechanism to set a focus parameter to the second focus setting.

Abstract: A nanoFET transistor includes doped channel junctions at either end of a channel region for one or more nanosheets of the nanoFET transistor. The channel junctions are formed by a iterative recessing and implanting process which is performed as recesses are made for the source/drain regions. The implanted doped channel junctions can be controlled to achieve a desired lateral straggling of the doped channel junctions.

Abstract: Provided is a transfer vehicle, including: a vehicle body; a rotating mechanism, including an annular track vertically arranged above the vehicle body, a crawler belt arranged along an end surface of the annular track, and a first driving device connected to the crawler belt; a plurality of material receiving rods arranged at intervals on a side of the rotating mechanism, wherein each material receiving rod includes an inner rod and an outer rod sleeved on the inner rod, and the inner rod is connected to the crawler belt; a docking auxiliary mechanism arranged beside a docking station on the side of the rotating mechanism, including a pushing device and a positioning device, wherein the positioning device is configured to determine an orientation of a target docking position; and a control mechanism configured to control movement of the vehicle body.

Abstract: The present invention discloses a method for dynamically assessing slope safety, and the method comprises the following steps: S1, carrying out geologic model generalization to the slope according to slope type, surface elevation, slope structure, stratum characteristics and a deformation failure mode to obtain a slope geologic model, creating a slope geometric model according to the said slope geologic model, carrying out the subdivision of computational grid, and selecting a reasonable numerical simulation method, mechanical constitutive and initial boundary value conditions to form a computational model; and S2, adjusting stratum parameters, structural plane parameters and activating factor strength based on the said computational model, carrying out a large amount of numerical simulation, summarizing results of the said numerical simulation, normalizing input quantities and output quantities to establish machine learning samples.

Abstract: A semiconductor device may include a semiconductor fin, a source/drain region extending from the semiconductor fin, and a gate electrode over the semiconductor fin. The semiconductor fin may include a first well and a channel region over the first well. The first well may have a first dopant at a first dopant concentration and the channel region may have the first dopant at a second dopant concentration smaller than the first dopant concentration. The first dopant concentration may be in range from 1017 atoms/cm3 to 1019 atoms/cm3.

Abstract: A semiconductor device and method of manufacture are provided. In some embodiments a divergent ion beam is utilized to implant ions into a capping layer, wherein the capping layer is located over a first metal layer, a dielectric layer, and an interfacial layer over a semiconductor fin. The ions are then driven from the capping layer into one or more of the first metal layer, the dielectric layer, and the interfacial layer.

Abstract: A multi-point measurement of a scene captured in an image frame may be used to process the image frame, such as by applying white balance corrections to the image frame. In some examples, the image frame may be segmented into portions that are illuminated by different illumination sources. Different portions of the image frame may be white balanced differently based on the color temperature of the illumination source for the corresponding portion. Infrared measurements of multiple points in the scene may be used to determine a characteristic of the illumination source of different portions of the scene. For example, a picture that includes indoor and outdoor portions may be illuminated by at least two illumination sources that produce different infrared measurements values. White balancing may be applied differently to these two portions to correct for color temperature of the different sources.

Abstract: Various examples of the present disclosure relate to a transmitter apparatus, device, method, and computer program, to a receiver apparatus, device, method, and computer program, and to corresponding source and destination devices and communication devices. The transmitter apparatus comprises a plurality of ports for data to be transmitted to a destination device, with each port being associated with a transmission data rate. The transmitter apparatus comprises processing circuitry configured to obtain data to be transmitted to the destination device via the plurality of ports. The processing circuitry is configured to multiplex the data to be transmitted to the destination device according to a weighted round-robin scheme to generate a multiplexed data stream. The weights of the weighted round-robin scheme are based on the transmission data rate of the respective port the data is obtained over. The processing circuitry is configured to transmit the multiplexed data stream to the destination device.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a semiconductor fin extending from a substrate. A dummy gate stack is formed over the semiconductor fin. The dummy gate stack extends along sidewalls and a top surface of the semiconductor fin. The semiconductor fin is patterned to form a recess in the semiconductor fin. A semiconductor material is deposited in the recess. An implantation process is performed on the semiconductor material. The implantation process includes implanting first implants into the semiconductor material and implanting second implants into the semiconductor material. The first implants have a first implantation energy. The second implants have a second implantation energy different from the first implantation energy.

Abstract: A method includes forming a source/drain region in a semiconductor fin; after forming the source/drain region, implanting first impurities into the source/drain region; and after implanting the first impurities, implanting second impurities into the source/drain region. The first impurities have a lower formation enthalpy than the second impurities. The method further includes after implanting the second impurities, annealing the source/drain region.

Abstract: This disclosure provides systems, methods, and devices for image processing that support noise reduction in low-light video sequences. The noise reduction is accomplished through a cascaded set of operations that are configured based on each set of operations location within the cascaded pipeline. The cascade may be implemented as a series of cascaded image post-processing engines (IPEs) within an image signal processor (ISP).

Abstract: A FinFET is provided including a channel region containing a constituent element and excess atoms, the constituent element belonging to a group of the periodic table of elements, wherein said excess atoms are nitrogen, or belong to said group of the periodic table of elements, and a concentration of said excess atoms in the channel region is in the range between about 1019 cm?3 and about 1020 cm?3.