Patents by Inventor Chun Feng

Chun Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12021082
    Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.
    Type: Grant
    Filed: February 6, 2023
    Date of Patent: June 25, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Hou-Yu Chen, Yong-Yan Lu
  • Publication number: 20240205180
    Abstract: Techniques for determining a status of exchange of audio messages between a source computing device and a destination computing device are described. In an example, an audio input is received from a user from a source computing device. A source audio message and a source text file are then generated based on the audio input. The source audio message is then sent to the destination computing device. A destination text file is then received from the source computing device, where the destination text file is generated based on a destination audio message received at the destination computing device, and where the destination audio message is received by the destination computing device corresponding to the source audio message. The source text file is then compared to the destination text file to determine a status of transmission of the source audio message to the destination computing device.
    Type: Application
    Filed: June 15, 2021
    Publication date: June 20, 2024
    Applicant: Hewlett-Packard Development Company, L.P.
    Inventors: CHUN FENG LI, XINHANG YANG, HSIANG-TA KE
  • Publication number: 20240206185
    Abstract: The present disclosure relates to an integrated chip device. The integrated chip device includes a plurality of conductive lines disposed over a substrate. The plurality of conductive lines are stacked onto one another and are separated from one another by dielectric layers interleaved between adjacent ones of the plurality of conductive lines. A ferroelectric layer is along sidewalls of the plurality of conductive lines and the dielectric layers. The ferroelectric layer separates a channel layer from the plurality of conductive lines. A species is disposed within the ferroelectric layer. The species has a concentration that decreases from the channel layer towards a surface of the ferroelectric layer that faces away from the channel layer.
    Type: Application
    Filed: February 29, 2024
    Publication date: June 20, 2024
    Inventors: Chun-Chieh Lu, Sai-Hooi Yeong, Bo-Feng Young, Yu-Ming Lin, Chih-Yu Chang
  • Publication number: 20240203976
    Abstract: Provided is a tap cell including a substrate, a first well, a second well, a first doped region, and the second doped region. The substrate has a first region and a second region. The first well has a first dopant type and includes a first portion disposed in the first region and a second portion extending into the second region. The second well has a second dopant type and includes a third portion disposed in the second region and a fourth portion extending into the first region. The first doped region having the first dopant type is disposed in the second portion of the first well and the third portion of the second well along the second region. The second doped region having the second dopant type is disposed in the first portion of the first well and the fourth portion of the second well along the first region.
    Type: Application
    Filed: February 29, 2024
    Publication date: June 20, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Feng Chang, Bao-Ru Young, Tung-Heng Hsieh, Chun-Chia Hsu
  • Publication number: 20240200854
    Abstract: A refrigeration appliance includes: a body, where the body is configured to define at least one storage compartment; a first door connected to the body through a first hinge, where the first door is configured to open to enable access and close to inhibit access to one of the at least one storage compartment; and a second door connected to a front of the first door through a second hinge. The refrigeration appliance further includes a connection accommodating portion. A first wire harness located in the first door and a second wire harness located in the second door are electrically connected to each other in the connection accommodating portion. The connection accommodating portion is located on the second hinge. Ideally, a structural layout on the first door can be optimized.
    Type: Application
    Filed: December 14, 2023
    Publication date: June 20, 2024
    Inventors: Han Feng, Ping Lv, Chun Hu, Chuanxin Wang
  • Publication number: 20240205609
    Abstract: The present disclosure provides a voice coil structure and a loudspeaker. The voice coil structure includes a substrate, a first wiring layer disposed on the substrate, and a first insulation layer disposed on the first wiring layer. The first wiring layer has a winding structure. The first wiring layer further includes a first end and a second end. The first insulation layer defines a through hole and a first notch. The first end is exposed from the through hole, and the second end is exposed from the first notch.
    Type: Application
    Filed: November 28, 2023
    Publication date: June 20, 2024
    Inventors: TSENG-FENG WEN, CHUN-HAN HUANG, CHUNG-HSIEN TSENG
  • Patent number: 12010988
    Abstract: This invention provides a low-temperature semen cryopreservation device, comprising: a box body for containing low-temperature cryoprotectant fluid; a tray, one end of which is pivotally connected to the inner side wall of the box body, and a limiting portion is provided on the tray for limiting the movement of the cryoprotectant tube. Two openings are sequentially arranged along the height direction on one side of the box body relative to the hinge end, with the height of one opening higher than that of the hinge end, and the height of the other opening lower than that of the hinge end; a limiting plate, which can be detachably inserted into either opening. When the limiting plate is switched from one opening to the other, the tray tilts to drive the cryopreservation tube to rotate 180 degrees, thereby ensuring the low-temperature cryoprotectant fluid to evenly fumigate the cryopreservation tube, improving the pre-cooling effect.
    Type: Grant
    Filed: October 19, 2023
    Date of Patent: June 18, 2024
    Assignee: ZHEJIANG UNIVERSITY
    Inventors: Jin-peng Rao, Shen Tian, Min Jin, Chun Feng, Fan Jin, Jian Chen, Feng Qiu
  • Patent number: 12010919
    Abstract: A heterogeneous integration chip of a micro fluid actuator is disclosed and includes a first substrate, a first insulation layer, a first conductive layer, a piezoelectric layer, a second conductive layer, a second substrate, a control element, a perforated trench and a conductor. The first substrate includes a first chamber. The first insulation layer is disposed on the first substrate. The first conductive layer is disposed on the first insulation layer and includes an electrode pad. The piezoelectric layer and the second conductive layer are stacked on the first conductive layer sequentially. The second substrate is assembled to the first substrate through a bonding layer to define a second chamber and includes an orifice, a fluid flowing channel and a third chamber. The control element is disposed in the second substrate. The perforated trench filled with the conductor is penetrated from the electrode pad to the second substrate.
    Type: Grant
    Filed: April 27, 2021
    Date of Patent: June 11, 2024
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Hao-Jan Mou, Hsien-Chung Tai, Lin-Huei Fang, Yung-Lung Han, Chi-Feng Huang, Chun-Yi Kuo, Tsung-I Lin, Chin-Wen Hsieh
  • Patent number: 12008763
    Abstract: This disclosure provides systems, methods, and devices for image capture and image processing that support capture using a variable aperture (VA) camera. In a first aspect, a method of image processing includes determining a plurality of depths for a scene, the plurality of depths corresponding to a plurality of regions of interest; determining an aperture size for a camera based on the plurality of depths; determining a lens position for the camera based on the aperture size and the plurality of depths; and controlling the camera to adjust a variable aperture (VA) of the camera based on the aperture size and to adjust a lens associated with the variable aperture (VA) based on the lens position. Other aspects and features are also claimed and described.
    Type: Grant
    Filed: August 4, 2022
    Date of Patent: June 11, 2024
    Assignee: QUALCOMM Incorporated
    Inventors: Wen-Chun Feng, Micha Galor Gluskin, Hui Shan Kao, Hang-Wei Liaw
  • Patent number: 12010408
    Abstract: Aspects of the present disclosure relate to systems and methods for image focusing for devices including multiple cameras. An example method includes estimating a focus distance associated with an image captured by a first camera, determining, based at least in part on the estimated focus distance, to switch from the first camera to a second camera, switching from the first camera to the second camera, completing a focusing operation using the second camera and presenting an updated image captured by the second camera.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: June 11, 2024
    Assignee: QUALCOMM Incorporated
    Inventors: Wen-Chun Feng, Mian Li
  • Publication number: 20240187350
    Abstract: A device and a method for communicating with a link partner device. The device may include a fragmentation unit configured to fragment a packet into multiple fragments if a size of the packet is greater than a maximum fragment size, a packet control header unit configured to generate a packet control header for a packet or each fragment of the packet, and a transceiver configured to send the packet or the fragments of the packet with the packet control header via a connection between the device and the link partner device. The packet control header may include a data flow control field for congestion control between the device and the link partner device, the data flow control field including a configuration parameter indicative of a flow control capability being supported by the device.
    Type: Application
    Filed: February 13, 2024
    Publication date: June 6, 2024
    Applicant: MAXLINEAR ASIA SINGAPORE PRIVATE LIMITED
    Inventors: Chun Feng Hu, Ingo Volkening
  • Patent number: 12001026
    Abstract: A head-mounted display includes a display device, a connecting structure and a head abutting portion. The connecting structure is in a shape of strip. The connecting structure has two opposite ends. The ends are respectively connected with the display device. The connecting structure and the display device define an accommodation space. The accommodation space is configured to accommodate a head of a user. The head abutting portion is pivotally connected with the connecting structure. The head abutting portion is at least partially located between the connecting structure and the display device. The head abutting portion is configured to abut against the head of the user.
    Type: Grant
    Filed: September 13, 2021
    Date of Patent: June 4, 2024
    Assignee: Quanta Computer Inc.
    Inventors: Hung-Yu Lin, Chun-Feng Yeh, Jia-Cheng Chang, Bing-Kai Huang, Chun-Nan Huang, Chun-Lung Chen
  • Publication number: 20240170437
    Abstract: A package structure is disclosed. The package structure includes a first substrate, a second substrate, a gap, and a directing structure. The second substrate is disposed under the first substrate. The gap is between the first substrate and the second substrate. The gap includes a first region and a second region. The first region is configured to accommodate a filling material. The directing structure is disposed in a flow path of the filling material and configured to reduce a migration of the filling material from the first region to the second region.
    Type: Application
    Filed: November 23, 2022
    Publication date: May 23, 2024
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Chun Fu KUO, Shang Min CHUANG, Ching Hung CHUANG, Hsu Feng TSENG, Jia Zhen WANG
  • Publication number: 20240171296
    Abstract: An optical receiving device includes a substrate; an optical receiving chip arranged on the substrate; an optical demultiplexer arranged on the substrate and used to distinguish optical signals into optical signals with different wavelengths; an optical transmission structure optically coupled to the optical demultiplexer and providing the optical signals to the optical demultiplexer; and an optical fiber array fused with optical fibers of the optical demultiplexer, and transmitting the optical signals with different wavelengths to the optical receiving chip.
    Type: Application
    Filed: January 5, 2023
    Publication date: May 23, 2024
    Inventor: CHUN-FENG LI
  • Patent number: 11986763
    Abstract: A remote control system for gas detection and purification is disclosed and includes a remote control device, a gas detection module and a gas purification device. The remote control device includes a gas inlet and a gas outlet. The gas detection module is disposed in the remote control device and in communication with the gas outlet to detect the gas located in an indoor space. The gas detection module provides and outputs a gas detection datum, and the remote control device transmits an operation command via wireless transmission. The gas purification device is disposed in the indoor space and receives the operating instruction transmitted from the remote control device to be operated. When the gas purification device is under the activated state, the gas in the indoor space is purified, and the purification operation mode of the gas purification device is adjusted according to the first gas detection datum.
    Type: Grant
    Filed: November 30, 2020
    Date of Patent: May 21, 2024
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Hao-Jan Mou, Yung-Lung Han, Chi-Feng Huang, Chun-Yi Kuo, Yang Ku, Chang-Yen Tsai, Wei-Ming Lee
  • Publication number: 20240157032
    Abstract: A high-strength medical fiber composite material includes a sodium alginate hydrogel matrix and a fiber framework. The fiber framework is completely embedded in the sodium alginate hydrogel matrix and formed by compounding supporting layer fibers and reinforcing layer fibers. The reinforcing layer fibers are located above the supporting layer fibers. The reinforcing layer fibers and the supporting layer fibers are orthogonal to each other. According to the high-strength medical fiber composite material prepared in the present invention, the stiffness is improved by 3-4 orders of magnitude, the tensile strength is improved by 2-3 orders of magnitude, and the high-strength medical fiber composite material has high biocompatibility and safety and a great application prospect.
    Type: Application
    Filed: November 29, 2021
    Publication date: May 16, 2024
    Applicant: CHANGZHOU INSTITUTE OF TECHNOLOGY
    Inventors: Che ZHAO, Songxue LIU, Chun FENG, Zhiwei WU, Yiwei ZHANG, Wenbiao JIANG, Xiaozhen LI
  • Publication number: 20240161818
    Abstract: The invention provides a layout pattern of static random access memory (SRAM), which at least comprises a plurality of gate structures located on a substrate and spanning the plurality of fin structures to form a plurality of transistors distributed on the substrate, wherein the plurality of transistors comprise two pull-up transistors (PU), two pull-down transistors (PD) to form a latch circuit, and two access transistors (PG) connected to the latch circuit. In each SRAM memory cell, the fin structure included in the pull-up transistor (PU) is defined as a PU fin structure, the fin structure included in the pull-down transistor (PD) is defined as a PD fin structure, and the fin structure included in the access transistor (PG) is defined as a PG fin structure, wherein a width of the PD fin structure is wider than a width of the PG fin structure.
    Type: Application
    Filed: November 30, 2022
    Publication date: May 16, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Hsien Huang, Yu-Tse Kuo, Shu-Ru Wang, Li-Ping Huang, Yu-Fang Chen, Chun-Yen Tseng, Tzu-Feng Chang, Chun-Chieh Chang
  • Patent number: 11984419
    Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.
    Type: Grant
    Filed: July 26, 2022
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-Hung Chen, Yu-Nu Hsu, Chun-Chen Liu, Heng-Chi Huang, Chien-Chen Li, Shih-Yen Chen, Cheng-Nan Hsieh, Kuo-Chio Liu, Chen-Shien Chen, Chin-Yu Ku, Te-Hsun Pang, Yuan-Feng Wu, Sen-Chi Chiang
  • Patent number: 11984322
    Abstract: A manufacturing method of a semiconductor device, comprises the following steps: providing a semiconductor substrate; forming a dummy insulation layer and a dummy electrode sequentially stacked on the semiconductor substrate; forming spacers on sidewalls of the dummy electrode; removing the dummy electrode to exposes inner sidewalls of the spacers; and performing an ion implantation process to the inner sidewalls of the spacers and the dummy insulation layer.
    Type: Grant
    Filed: May 6, 2022
    Date of Patent: May 14, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tien-Shun Chang, Chun-Feng Nieh, Huicheng Chang, Yee-Chia Yeo
  • Patent number: 11978634
    Abstract: A method of forming a semiconductor device includes performing a first implantation process on a semiconductor substrate to form a deep p-well region, performing a second implantation process on the semiconductor substrate with a diffusion-retarding element to form a co-implantation region, and performing a third implantation process on the semiconductor substrate to form a shallow p-well region over the deep p-well region. The co-implantation region is spaced apart from a top surface of the semiconductor substrate by a portion of the shallow p-well region, and the dee p-well region and the shallow p-well region are joined with each other. An n-type Fin Field-Effect Transistor (FinFET) is formed, with the deep p-well region and the shallow p-well region acting as a well region of the n-type FinFET.
    Type: Grant
    Filed: May 25, 2022
    Date of Patent: May 7, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Sih-Jie Liu, Chun-Feng Nieh, Huicheng Chang