Abstract: An organic light emitting diode display including a substrate; a light blocking layer disposed on the substrate and having a semiconductor opening; a first semiconductor pattern disposed in the semiconductor opening; a gate insulating layer disposed on the light blocking layer and the first semiconductor pattern; a first gate electrode disposed on the gate insulating layer; a first source electrode electrically connected to the first semiconductor pattern; a first drain electrode spaced apart from the first source electrode; a protective insulating layer disposed on the first source electrode and the first drain electrode, the protective insulating layer having a contact portion; a pixel electrode disposed on the protective insulating layer contacting the first drain electrode through the contact portion; an emitting layer disposed on the pixel electrode; and a common electrode disposed on the emitting layer.

Abstract: A thin film transistor, a display device including the same, and a method of manufacturing the display device, the thin film transistor including a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; and source/drain electrodes electrically connected with the semiconductor layer, wherein the gate electrode has a thickness of about 500 ? to about 1500 ? and the gate insulating layer has a thickness of about 1600 ? to about 2500 ?.

Abstract: A thin-film transistor (TFT) array substrate comprises: a substrate; an active layer and a capacitor first electrode formed on the substrate; a gate insulating film formed on the substrate, the active layer and the capacitor first electrode; a gate electrode formed on the gate insulating film corresponding to the active layer and a capacitor second electrode formed on the gate insulating film corresponding to the capacitor first electrode; an interlayer insulating film formed on the gate insulating film, the gate electrode, and the capacitor second electrode; and a pixel electrode, a source electrode, and a drain electrode formed on the interlayer insulating film; wherein at least one of the source electrode and the drain electrode is formed on the pixel electrode. A method of fabricating the TFT array substrate is also disclosed.

Abstract: A thin film transistor (TFT) array substrate includes a TFT including an active layer, a gate electrode, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer and a third insulating layer between the gate electrode and the source and drain electrodes, the first insulating layer and the second insulating layer extending in the TFT, a pixel electrode including a transparent conductive oxide material, the pixel electrode being on the first insulating layer and the second insulating layer and being connected to the source or drain electrodes via an opening in the third insulating layer, a capacitor including a first electrode on a same layer as the gate electrode and a second electrode on a same layer as the pixel electrode; and a fourth insulating layer covering the source and drain electrodes and exposing the pixel electrode via an opening.

Abstract: An OLED device includes an active layer on a substrate; a first insulating layer covering the active layer, and including a first opening and a first insulation island in the first opening, separated from an inner surface of the first opening; a gate electrode on the first insulating layer including gate bottom and top electrodes; a pixel electrode on the first insulation island on the same layer as the gate bottom electrode; source and drain electrodes insulated from the gate electrode and electrically connected to the active layer; a second insulating layer between the gate and the source and drain electrodes, and including a second opening exposing the pixel electrode; a light-reflecting portion in the openings, and surrounding the pixel electrode; an intermediate layer on the pixel electrode and including an organic emissive layer; and an opposite electrode facing the pixel electrode with the intermediate layer interposed between them.

Abstract: An organic light-emitting diode (OLED) display apparatus including a substrate, an insulation layer on the substrate, and an align mark formed of an insulation material, wherein an upper surface of the insulation layer contacts a lower surface of the align mark.

Abstract: An organic light emitting display device includes a substrate, a thin film transistor formed on the substrate and including an active layer, a gate electrode including a gate lower electrode and a gate upper electrode, a source electrode, and a drain electrode, an organic light emitting device electrically connected to the thin film transistor, wherein a pixel electrode formed of the same material as at least a part of the gate electrode in the same layer, an intermediate layer including a light emitting layer, and an opposed electrode arranged to face the pixel electrode are sequentially deposited.

Abstract: An organic light emitting diode (OLED) display includes: a first substrate including a display area and a non-display area; a driving element on the display area of the first substrate, and including a driving thin film transistor, a switching thin film transistor, and a capacitor; a circuit unit on the non-display area of the first substrate; an organic light emitting element on the driving element, and including a pixel electrode, an organic emission layer, and a common electrode; an inorganic protective layer covering the circuit unit and the common electrode of the organic light emitting diode; a sealing member on the inorganic protective layer in the non-display area of the first substrate; and a second substrate on the sealing member.

Abstract: A display apparatus for improving corrosion resistance of a pad area and a method of manufacturing the same. The display apparatus includes a first substrate including a display area, a non-display area, and a pad area, and a second substrate facing the first substrate and corresponding to at least the display area, wherein the pad area includes, a connection area connected to a driving circuit; an exposed area spaced from the connection area; and a plurality of blocking areas between the connection area and the exposed area.

Abstract: The present invention relates to an organic light emitting device and a manufacturing method thereof. The present invention discloses an organic light emitting device including: a plurality of scanning signal lines; a first and second contact assistant; a plurality of data lines crossing the scanning signal lines; a driving voltage line; and a first pixel, a second pixel, and a third pixel alternately arranged, wherein each pixel includes: a switching transistor, a driving transistor including an output terminal, a pixel electrode connected to the output terminal, the pixel electrode including at least two layers including a transflective electrode, an organic light emitting member arranged on the pixel electrode, and a common electrode arranged on the organic light emitting member, wherein the first pixel further includes a supplementary member arranged on the pixel electrode, and wherein the first and second contact assistants include the same material as the supplementary member.

Abstract: A flat panel display device including a substrate including first and second regions; an active layer on the first region of the substrate including a semiconductor material; a lower electrode on the second region of the substrate including the semiconductor material; a first insulating layer on the substrate including the active layer and the lower electrode thereon; a gate electrode on the first insulating layer overlying the active layer and including a first conductive layer pattern and a second conductive layer pattern; an upper electrode on the first insulating layer overlying the lower electrode and including the first conductive layer pattern and the second conductive layer pattern; a second insulating layer on the gate electrode and the upper electrode exposing portions of the active layer and portions of the upper electrode; and a source electrode and a drain electrode connected to the exposed portions of the active layer.

Abstract: A thin-film transistor (TFT) array substrate comprises: a substrate; an active layer and a capacitor first electrode formed on the substrate; a gate insulating film formed on the substrate, the active layer and the capacitor first electrode; a gate electrode formed on the gate insulating film corresponding to the active layer and a capacitor second electrode formed on the gate insulating film corresponding to the capacitor first electrode; an interlayer insulating film formed on the gate insulating film, the gate electrode, and the capacitor second electrode; and a pixel electrode, a source electrode, and a drain electrode formed on the interlayer insulating film; wherein at least one of the source electrode and the drain electrode is formed on the pixel electrode. A method of fabricating the TFT array substrate is also disclosed.

Abstract: A thin film transistor (TFT) and a flat panel display device including the same. The TFT includes a substrate, a gate electrode formed over the substrate, the gate electrode formed with silicon doped with impurities, a gate wiring connected to the gate electrode, an active layer formed over the gate electrode, and source and drain electrodes connected to the active layer. According to such a structure, since heat flow to the gate electrode during crystallization of the active layer may be prevented, stable crystallization of the active layer may be performed, and thus an error rate of a product may be decreased.

Abstract: A display device and a method of manufacturing the same. In one embodiment, a display device includes a substrate having a pixel region, a transistor region and a capacitor region, a transistor arranged within the transistor region of the substrate and a capacitor arranged within the capacitor region of the substrate, wherein the capacitor includes a lower electrode arranged on the substrate, a gate insulating layer arranged on the lower electrode and an upper electrode arranged on the gate insulating layer and overlapping the lower electrode, the upper electrode includes a first conductive layer and a second conductive layer arranged on the first conductive layer, wherein the first conductive layer is opaque.

Abstract: A thin film transistor array panel includes a passivation layer formed on a plurality of end portions of a plurality of gate lines. A portion of the passivation layer has a porous structure formed between a connection portion of a flexible printed circuit substrate and a thin film transistor substrate such that when the flexible printed circuit substrate and the thin film transistor array panel are connected to each other, the passivation layer having a porous structure and which is formed at the connection portion therebetween connects the flexible printed circuit substrate with the thin film transistor array panel thereby minimizing an exposed area of the metal of the connection portion to improve a corrosion resistance thereof.

Abstract: Provided is an organic light-emitting display device. The organic light-emitting display device includes: a substrate; a buffer layer formed on the substrate; a gate insulating layer formed on the buffer layer; a conductive layer formed on the gate insulating layer; and a pixel defined layer exposing a portion of the conductive layer to form a pad portion connected to bumps of a drive integrated circuit (IC) chip, wherein protrusions and recesses are formed on a surface of the conductive layer.

Abstract: Making an OLED display, includes forming a first storage plate and a gate insulating layer covering the first storage plate on a substrate; sequentially forming a second storage plate covering the first storage plate and a capacitor intermediate on the gate insulating layer; forming a first doping region by injecting an impurity to a part that is not covered by the capacitor intermediate in the first storage plate; forming an interlayer insulating layer having a capacitor opening exposing the capacitor intermediate, and a plurality of erosion preventing layers on an edge of the capacitor intermediate toward the first doping region in the capacitor opening; removing the capacitor intermediate including the erosion preventing layer and a lower region of the erosion preventing layer, and injecting an impurity in the first storage plate through the second storage plate to form a second doping region contacting the first doping region.

Abstract: An organic light-emitting display device includes: a substrate; an active layer on the substrate; a gate electrode insulated from the active layer and overlapping with the active layer; a source electrode including a first source electrode layer, connected to the active layer, and a second source electrode layer connected to the first source electrode layer, the second source electrode layer being larger than the first source electrode layer; a drain electrode including a first drain electrode layer connected to the active layer, and a second drain electrode layer connected to the first drain electrode layer, the second drain electrode layer being larger than the first drain electrode layer; a first electrode directly connected to a top surface of the source electrode or the drain electrode; an intermediate layer on the first electrode and including an organic emission layer; and a second electrode on the intermediate layer.

Abstract: An organic light-emitting display device is manufactured via a simple process and has an improved aperture ratio. The organic light-emitting display device comprising: a substrate; an auxiliary electrode formed on the substrate; a thin film transistor (TFT) formed on the auxiliary electrode, the TFT comprising an active layer, a gate electrode, a source electrode and a drain electrode; an organic electroluminescent (EL) device electrically connected to the TFT and formed by sequentially stacking a pixel electrode formed on the same layer by using the same material as portions of the source and drain electrodes, an intermediate layer comprising an organic light emission layer (EML), and an opposite electrode disposed to face the pixel electrode; and a contact electrode formed on the same layer by a predetermined distance by using the same material as the source and drain electrodes, and electrically connecting the auxiliary electrode and the opposite electrode.

Abstract: A thin film transistor TFT, including a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, an active layer on the gate insulating layer, the active layer corresponding to the gate electrode and including a channel region, source and drain electrodes contacting the active layer, the source and drain electrodes being separate from each other, and an ohmic contact layer between the active layer and at least one of the source and drain electrodes, the ohmic contact layer including an oxide semiconductor material.