Patents by Inventor Chun-Han Chen

Chun-Han Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200405636
    Abstract: An ophthalmic product having an antioxidative function includes an ophthalmic composition. The ophthalmic composition includes gold nanoparticles and at least one antioxidative auxiliary ingredient. The effective concentration of the gold nanoparticles is from 0.01 ppm to 3000 ppm. The content of the at least one antioxidative auxiliary ingredient is greater than 0 wt % and less than 20 wt % based on 100 wt % of the ophthalmic composition.
    Type: Application
    Filed: June 9, 2020
    Publication date: December 31, 2020
    Inventors: CHUN-HAN CHEN, WAN-YING GAO
  • Publication number: 20200405751
    Abstract: An ophthalmic product having a cornea repair function includes an ophthalmic composition. The ophthalmic composition includes gold nanoparticles serving as the main repairing ingredient and at least one auxiliary repairing ingredient. The effective concentration of the gold nanoparticles is from 0.01 ppm to 3000 ppm. The content of the at least one auxiliary repairing ingredient is greater than 0 wt % and less than 20 wt % based on 100 wt % of the ophthalmic composition.
    Type: Application
    Filed: June 10, 2020
    Publication date: December 31, 2020
    Inventors: CHUN-HAN CHEN, WAN-YING GAO
  • Patent number: 10804173
    Abstract: The present disclosure relates to a semiconductor device package, which includes a carrier, a lid, a first adhesive layer and a constraint structure. The carrier includes a surface and a first conductive pad on the surface of the carrier. The lid includes a first portion and a second portion separated from the first portion on the surface of the carrier. The first conductive pad is disposed between the first portion of the lid and the surface of the carrier. The first adhesive layer includes a first portion between the first portion of the lid and the first conductive pad. The constraint structure surrounds the first adhesive layer.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: October 13, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Chun-Han Chen, Hsun-Wei Chan, Mei-Yi Wu
  • Patent number: 10797050
    Abstract: A FinFET device structure is provided. The FinFET device structure includes a first gate structure formed over a fin structure, and a first capping layer formed over the first gate structure. The FinFET device structure includes a first etching stop layer formed over the first capping layer and the first gate structure, and a top surface and a sidewall surface of the first capping layer are in direct contact with the first etching stop layer.
    Type: Grant
    Filed: October 8, 2019
    Date of Patent: October 6, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Han Chen, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang, Jr-Hung Li, Bo-Cyuan Lu
  • Patent number: 10770624
    Abstract: A semiconductor package includes a first substrate having a first surface, a second substrate on the first surface of the first substrate, the second substrate having a first surface and a second surface adjacent to the first surface, and the first surface of the second substrate being disposed on the first surface of the first substrate, and a light source on the second surface of the second substrate. A method for manufacturing the semiconductor device package is also provided.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: September 8, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Chang Chin Tsai, Chun-Han Chen, Hsin-Ying Ho
  • Publication number: 20200135550
    Abstract: In an embodiment, a method includes: forming a differential contact etch stop layer (CESL) having a first portion over a source/drain region and a second portion along a gate stack, the source/drain region being in a substrate, the gate stack being over the substrate proximate the source/drain region, a first thickness of the first portion being greater than a second thickness of the second portion; depositing a first interlayer dielectric (ILD) over the differential CESL; forming a source/drain contact opening in the first ILD; forming a contact spacer along sidewalls of the source/drain contact opening; after forming the contact spacer, extending the source/drain contact opening through the differential CESL; and forming a first source/drain contact in the extended source/drain contact opening, the first source/drain contact physically and electrically coupling the source/drain region, the contact spacer physically separating the first source/drain contact from the first ILD.
    Type: Application
    Filed: June 3, 2019
    Publication date: April 30, 2020
    Inventors: Chun-Han Chen, I-Wen Wu, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang, Chung-Ting Ko, Jr-Hung Li, Chi On Chui
  • Patent number: 10624897
    Abstract: The invention provides a series of chlorobenzene substituted azaaryl compounds having activity in inhibiting cancer cell growth and low toxicity to normal cells. Particularly, the compounds of the invention have stronger inhibition effect on bladder cancer and liver cancer.
    Type: Grant
    Filed: July 20, 2016
    Date of Patent: April 21, 2020
    Assignee: Taipei Medical University
    Inventors: Yun Yen, Jing-Ping Liou, Chun-Han Chen
  • Publication number: 20200043924
    Abstract: A FinFET device structure is provided. The FinFET device structure includes a first gate structure formed over a fin structure, and a first capping layer formed over the first gate structure. The FinFET device structure includes a first etching stop layer formed over the first capping layer and the first gate structure, and a top surface and a sidewall surface of the first capping layer are in direct contact with the first etching stop layer.
    Type: Application
    Filed: October 8, 2019
    Publication date: February 6, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Han CHEN, Chen-Ming LEE, Fu-Kai YANG, Mei-Yun WANG, Jr-Hung LI, Bo-Cyuan LU
  • Patent number: 10475788
    Abstract: A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate and a first gate structure formed over the fin structure. The FinFET device structure also includes a first capping layer formed over the first gate structure and a first etching stop layer over the first capping layer and the first gate structure. The FinFET device structure further includes a first source/drain (S/D) contact structure formed over the fin structure and adjacent to the first gate structure. A portion of the first etching stop layer which is directly above the first capping layer is higher than another portion of the first etching stop layer which is directly above the first gate spacer layer.
    Type: Grant
    Filed: November 24, 2017
    Date of Patent: November 12, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Han Chen, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang, Jr-Hung Li, Bo-Cyuan Lu
  • Publication number: 20190194701
    Abstract: A method for producing butyric acid and/or a butyrate is provided, wherein the method comprises fermenting a saccharide-containing substrate in the presence of a first strain and a second strain, wherein the first strain is a butyric acid bacterium and the second strain is at least one of a homofermentative lactic acid bacterium and a facultative heterofermentative lactic acid bacterium.
    Type: Application
    Filed: December 17, 2018
    Publication date: June 27, 2019
    Inventors: Chiang-Hsiung TONG, Chun-Han CHEN, Wan-Shan CHIEN, Ruey-Fu SHIH, Jheng-Jin LUO
  • Publication number: 20190164960
    Abstract: A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate and a first gate structure formed over the fin structure. The FinFET device structure also includes a first capping layer formed over the first gate structure and a first etching stop layer over the first capping layer and the first gate structure. The FinFET device structure further includes a first source/drain (S/D) contact structure formed over the fin structure and adjacent to the first gate structure. A portion of the first etching stop layer which is directly above the first capping layer is higher than another portion of the first etching stop layer which is directly above the first gate spacer layer.
    Type: Application
    Filed: November 24, 2017
    Publication date: May 30, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Han CHEN, Chen-Ming LEE, Fu-Kai YANG, Mei-Yun WANG, Jr-Hung LI, Bo-Cyuan LU
  • Patent number: 10297632
    Abstract: A design method for an image sensor device includes providing an initial design for an image sensor device. The initial design includes a pixel array region and a through-via region disposed proximate the pixel array region. The initial design has a first length between the pixel array region and the through-via region. The initial design has a second length that is a width of the through-via region. The design method includes analyzing a ratio of the second length and the first length, and modifying the initial design to achieve a ratio of the second length and the first length within a particular range.
    Type: Grant
    Filed: December 18, 2017
    Date of Patent: May 21, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chun-Han Chen, Szu-Ying Chen, Dun-Nian Yaung
  • Publication number: 20190115505
    Abstract: A semiconductor package includes a first substrate having a first surface, a second substrate on the first surface of the first substrate, the second substrate having a first surface and a second surface adjacent to the first surface, and the first surface of the second substrate being disposed on the first surface of the first substrate, and a light source on the second surface of the second substrate. A method for manufacturing the semiconductor device package is also provided.
    Type: Application
    Filed: September 14, 2018
    Publication date: April 18, 2019
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Chang Chin TSAI, Chun-Han CHEN, Hsin-Ying HO
  • Patent number: 10243431
    Abstract: The present disclosure relates to a heat dispersion apparatus for motors, which comprises: a cooling fan, and a guide cover. The cooling fan has a plurality of fan blades disposed radially on a back plate, the outside portion of the fan blades axially extend beyond the periphery of the back plate, and the back plate is a cone structure. The guide cover has air inlet, a plurality of holes opened on the surface of the air inlet with slots, the slots arranged in accordance with the rotation direction of the cooling fan, and each slot set up a chamfer for leading into more air to reduce temperature. With this device, airflow supercharging and peripheral axial flow are improved, and the slot structure and the cooling fan blades can introduce a large scale of air; thereby the present invention provides a significant improvement to motors.
    Type: Grant
    Filed: March 31, 2015
    Date of Patent: March 26, 2019
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ying-Che Weng, Chun-Han Chen, Hung-Cheng Yen, Yung-Jen Cheng
  • Publication number: 20190083499
    Abstract: The invention provides a series of chlorobenzene substituted azaaryl compounds having activity in inhibiting cancer cell growth and low toxicity to normal cells. Particularly, the compounds of the invention have stronger inhibition effect on bladder cancer and liver cancer.
    Type: Application
    Filed: July 20, 2016
    Publication date: March 21, 2019
    Inventors: Yun YEN, Jing-Ping LIOU, Chun-Han CHEN
  • Patent number: 10215784
    Abstract: A measuring system, during a measurement process thereof, uses a phase-locked loop mechanism of a stator phase voltage and a stator phase current of a three-phase AC motor to effectively remove harmonics and to sense and obtain the amplitude effective values of the phase voltage and the phase current of the three-phase AC motor and the phase difference between the phase voltage and phase current. Therefore, the measuring apparatus is capable of quickly and accurately calculating the input power of the motor without having to measure the parameters of the motor.
    Type: Grant
    Filed: December 6, 2017
    Date of Patent: February 26, 2019
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chun-Han Chen, Chun-Hsiang Yang, Yung-Jen Cheng, Ming-Fa Tsai, Ying-Che Weng
  • Patent number: 10138987
    Abstract: A speed reducer used in a server is disclosed to include a first planetary gear set, a planet gear carrier, an internal gear surrounding the first planetary gear set, and an output gear. The first planet gear includes a first sun gear mounted on the motor output shaft, at least one first planet gear pivotally coupled at the first planet gear carrier and meshed with the first sun gear and the internal gear for driving the first planet gear carrier and the output gear to rotate. Thus, the first planetary gear set reduces the revolving speed of the rotary driving force outputted by the motor output shaft, and effectively transfer the rotary driving force to the output gear, achieving the advantages of low backlash and long service life, reducing power transfer loss, increasing server output torque, and providing high speed ratio, high design flexibility and high assembly yields.
    Type: Grant
    Filed: April 26, 2016
    Date of Patent: November 27, 2018
    Assignee: TRICORE CORPORATION
    Inventors: Yen-Fu Chen, Chien-Min Huang, Chun-Han Chen
  • Publication number: 20180125092
    Abstract: A method for preparing a feedstuff comprising butyric acid and/or butyrate, comprising: adding a microorganism into a light corn steepwater to provide a mixture, wherein the microorganism comprises a first strain and the first strain is able to metabolize saccharides and/or organic compounds in a fermentation to produce butyric acid; keeping the mixture under an anaerobic atmosphere to conduct the fermentation to provide a fermentation broth; and optionally condensing the fermentation broth. Optionally, the microorganism further comprises a second strain, wherein the second strain is able to fix a carbon oxide.
    Type: Application
    Filed: October 23, 2017
    Publication date: May 10, 2018
    Inventors: Chiang-Hsiung TONG, Shih-Chan TSENG, Chun-Han CHEN, Wan-Shan CHIEN, Jheng-Jin LUO, Ruey-Fu SHIH
  • Publication number: 20180108699
    Abstract: A design method for an image sensor device includes providing an initial design for an image sensor device. The initial design includes a pixel array region and a through-via region disposed proximate the pixel array region. The initial design has a first length between the pixel array region and the through-via region. The initial design has a second length that is a width of the through-via region. The design method includes analyzing a ratio of the second length and the first length, and modifying the initial design to achieve a ratio of the second length and the first length within a particular range.
    Type: Application
    Filed: December 18, 2017
    Publication date: April 19, 2018
    Inventors: Chun-Han Chen, Szu-Ying Chen, Dun-Nian Yaung
  • Patent number: 9847364
    Abstract: Image sensor devices, design methods thereof, and manufacturing methods thereof are disclosed. In some embodiments, a design method for an image sensor device includes providing an initial design for an image sensor device. The initial design includes a pixel array region and a through-via region disposed proximate the pixel array region. The initial design has a first length between the pixel array region and the through-via region. The initial design has a second length that is a width of the through-via region. The design method includes analyzing a ratio of the second length and the first length, and modifying the initial design to achieve an optimal ratio of the second length and the first length.
    Type: Grant
    Filed: August 20, 2014
    Date of Patent: December 19, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Han Chen, Szu-Ying Chen, Dun-Nian Yaung