Abstract: A method includes irradiating debris deposited in an extreme ultraviolet (EUV) lithography system with laser, controlling one or more of a wavelength of the laser or power of the laser to selectively vaporize the debris and limit damage to the EUV) lithography system, and removing the vaporized debris.

Abstract: A semiconductor memory device includes a stack of alternating insulating layers and first conductive layers disposed over a substrate; a plurality of memory cell strings penetrating the stack over the substrate, each memory cell string comprising a central portion extending through the stack, a semiconductor layer surrounding the central portion, and a ferroelectric layer surrounding the semiconductor layer, and the central portion comprising a channel isolation structure and a second conductive layer and a third conductive layer at two sides of the channel isolation structure; and a plurality of cell isolation structures penetrating the conductive layers and the insulating layers over the substrate and disposed between two memory cell strings, each cell isolation structure comprising a top portion and a bottom portion adjoined to the top portion and different from the top portion.

Abstract: A lock device structure includes an assembly of a case body and an actuator body, a linking member and a slide body mounted on the case body. The actuator body has two arm sections and a notch section positioned between the two arm sections. An operation member and an elastic member are disposed in the notch section. The elastic member serves to make the operation member reciprocally move in an axial direction of the actuator body. The linking member has a first end pivotally connected with the actuator body (or the operation member) and a second end connected with the slide body. When an operator pulls (and pushes) the operation member to move, the actuator body is permitted to move from a closed position to an open position to drive the linking member and the slide body to move.

Abstract: A rotation device includes a base seat, an axle unit and a lock unit. The axle unit extends into the base seat. The lock unit includes a lock plate that is sleeved on the axle unit, and a lock member that is disposed on the base seat. The lock plate is formed with a first lock groove. The lock member has a lock portion that is operable to move into the first lock groove. The lock plate is locked by the lock portion of the lock member when the lock portion moves into the first lock groove, so that the axle unit and the lock plate are not rotatable relative to the base seat.

Abstract: A rotation device includes a base seat, an axle unit and a restoring unit. The axle unit includes an upper axle that extends into the base seat. The restoring unit permits the upper axle to extend therein. The restoring unit is for restoring the upper axle to its original position after the upper axle is rotated.

Abstract: Disclosed is an optical system using image restoration, including a light source, a pinhole, a testing platform, an image sensor and an image processing device. The pinhole is disposed on a light transmission path of the light source. The testing platform is disposed on the light transmission path of the light source and the pinhole is located between the light source and the testing platform. The testing platform is used to place a testing sample. The image sensor is disposed below the testing platform, and used to sense the testing sample so as to output an optical diffraction signal. The image processing device is electrically connected to the image sensor and used to perform signal processing and optical signal recognition on the optical diffraction signal of the testing sample so as to obtain a clear image of the testing sample.

Abstract: A three-dimensional memory device and a manufacturing method thereof are provided. The three-dimensional memory device includes first and second stacking structures, isolation pillars, gate dielectric layers, channel layers and conductive pillars. The stacking structures are laterally spaced apart from each other. The stacking structures respectively comprises alternately stacked insulating layers and conductive layers. The isolation pillars laterally extend between the stacking structures. The isolation pillars further protrude into the stacking structures, and a space between the stacking structures is divided into cell regions. The gate dielectric layers are respectively formed in one of the cell regions, and cover opposing sidewalls of the stacking structures and sidewalls of the isolation pillars. The channel layers respectively cover an inner surface of one of the gate dielectric layers.

Abstract: A semiconductor device includes a fin-shaped structure on the substrate, a shallow trench isolation (STI) around the fin-shaped structure, a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure, a second gate structure on the STI, and a third gate structure on the SDB structure. Preferably, a width of the third gate structure is greater than a width of the second gate structure and each of the first gate structure, the second gate structure, and the third gate structure includes a U-shaped high-k dielectric layer, a U-shaped work function metal layer, and a low-resistance metal layer.

Abstract: A power management integrated circuit (PMIC) soldered onto a printed circuit board, includes: a first output stage circuit and a second output stage circuit. In a separate power supply configuration, first and second current inflow pins of the first and second output stage circuits are soldered to first and second current inflow printed lines, respectively, wherein the first and second current inflow printed lines are not directly electrically connected to each other; and, first and second current outflow pins of the first and second output stage circuits are soldered to first and second current outflow printed lines respectively, wherein the first and second current outflow printed lines are not directly electrically connected to each other. In a cooperation power supply configuration, the first and second current inflow pins are both soldered to a common current inflow printed line of the PCB, to be electrically connected with each other.

Abstract: A minimum IC operating voltage searching method includes acquiring a corner type of an IC, acquiring ring oscillator data of the IC, generating a first prediction voltage according to the corner type and the ring oscillator data by using a training model, generating a second prediction voltage according to the ring oscillator data by using a non-linear regression approach under an N-ordered polynomial, and generating a predicted minimum IC operating voltage according to the first prediction voltage and the second prediction voltage. N is a positive integer.

Abstract: A rotation device includes a base seat, an axle unit, a lower rotating module and an upper rotating module. The axle unit includes an upper axle and a lower axle. The lower rotating module includes a lock unit, and an outer barrel that is disposed in the base seat and that is penetrated by the lower axle. The lock unit includes a lock plate that is sleeved on the lower axle, and a lock member that is mounted to the base seat. The lock plate is formed with a first lock groove. The lock member has a lock portion that is operable to move into the first lock groove. The upper rotating module is disposed in the base seat and is co-rotatably sleeved on the upper axle. The upper rotating module is able to be driven by the upper axle to rotate relative to the lower rotating module.

Abstract: A multi-link hinge assembly includes a link rod unit including a base rod, two supporting link rods, two synchronization link rods, two supporting rods, and a supporting plate unit. The base rod has a base rod body, two base connecting portions respectively connected to opposite ends of the base rod body, and two central connecting portions disposed between the base connecting portions. Each synchronization link rod has a first synchronization end portion pivotably connected to a respective one of the central connecting portions, and a second synchronization end portion opposite thereto. The supporting plate unit includes two supporting plates respectively connected to the supporting rods and each having inner and outer portions. The link rod unit is operable between an unfolded position and a folded position, where the second synchronization end portions are away from each other, and the inner portions define a relief space therebetween.

Abstract: A method for the surface treatment of a corrosion-resistant nickel-based alloy and the resulting surface structure of the treated alloy is disclosed. The method includes immersing a nickel-based alloy in a first neutral or alkaline solution to remove surface contaminants, followed by immersing the cleaned alloy in a second neutral or alkaline solution to form functional groups on its surface. Subsequently, a low-temperature heat treatment is performed to form a passivation layer on the surface of the nickel-based alloy. The passivation layer has a surface roughness of less than 0.04 microns and a thickness ranging from 5 nanometers to 200 nanometers. The resulting corrosion-resistant nickel-based alloy comprises a substrate made of the nickel-based alloy and a passivation layer established on at least one surface of the substrate. The nickel content of the alloy is greater than 50%, and the alloy may also contain additional metallic components such as chromium (Cr) and manganese (Mn).

Abstract: This disclosure relates to protein complexes targeting CD47 and 4-1BB, and methods of use thereof. In one aspect, the protein complexes include one or more CD47-binding domains including all or a portion of the SIRP? extracellular regions, and one or more 4-1BB-binding domains including all or a portion of the 4-1BBL extracellular region.

Abstract: A method includes irradiating debris deposited in an extreme ultraviolet (EUV) lithography system with laser, controlling one or more of a wavelength of the laser or power of the laser to selectively vaporize the debris and limit damage to the EUV) lithography system, and removing the vaporized debris.

Abstract: A synchronizing hinge includes a rotating module and a bracket plate unit. The rotating module includes two support units pivotably mounted to a base seat. Each support unit has a first support piece, a second support piece pivotably connected with the first support piece, and a moving axle extending through the first support piece and an arcuate slot of the second support piece and movably received in a moving slot of the base seat. The bracket plate unit includes two first bracket plates securely connected with the first support piece, and two second bracket plates securely connected with the second support piece. The support units and the bracket plate unit are rotatable between an initial position where the first bracket plates are flush with the second bracket plates, and a terminal position where the first bracket plates are inclined relative to the second bracket plates by an inclined angle.

Abstract: A multi-link hinge assembly includes a link rod unit including a base rod, two supporting link rods, two synchronization link rods, two supporting rods, and a supporting plate unit. The base rod has a base rod body, two base connecting portions respectively connected to opposite ends of the base rod body, and two central connecting portions disposed between the base connecting portions. Each synchronization link rod has a first synchronization end portion pivotably connected to a respective one of the central connecting portions, and a second synchronization end portion opposite thereto. The supporting plate unit includes two supporting plates respectively connected to the supporting rods and each having inner and outer portions. The link rod unit is operable between an unfolded position and a folded position, where the second synchronization end portions are away from each other, and the inner portions define a relief space therebetween.

Abstract: A bearing structure for a high-low-voltage conversion circuit is disclosed and includes an insulation carrier, a first conductor layer, a second conductor layer, a first trench and a first insulation material. The first conductor layer and the second conductor layer are coated on the first surface and the second surface of the insulation carrier, respectively. A voltage difference is formed between the first conductor layer and the second conductor layer. The first trench is disposed on the first surface and surrounds an outer peripheral edge of the first conductor layer. The first conductor layer is extended from the first surface into the first trench, and the outer peripheral edge of the first conductor layer is located at a bottom of the first trench. The first insulation material covers the outer peripheral edge of the first conductor layer and is filled in the first trench.

Abstract: A transmitter device adapted to be coupled to an image providing device and a receiver device includes first and second conversion units, a wireless module, and a processing unit. The first conversion unit and the second conversion unit are configured to be coupled to the image providing device through an HDMI transmission cable and a Type-C transmission cable, respectively, so as to respectively receive a first video and audio stream and a second video and audio stream provided by the image providing device. The wireless module is connected to the receiver device through wireless communication. The processing unit preferentially selects the first conversion unit to receive a first video and audio signal output by converting the first video and audio stream by the first conversion unit and transmits the first video and audio signal to the receiver device through the wireless module.

Abstract: A wireless briefing device includes a first antenna, a second antenna, and a ground plane. Each of the first antenna and the second antenna couples out a frequency band. A distance between the first antenna and the ground plane is between 0.2 and 0.3 times of a wavelength of the frequency band, and a distance between the second antenna and the ground plane is between 0.2 and 0.3 times of the wavelength of the frequency band.