Patents by Inventor Chun Han

Chun Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240140794
    Abstract: A petroleum residue stream is heated and reacted with an oxygen stream and a carbon dioxide stream in a gasification unit to produce syngas. At least a portion of the carbon monoxide is converted into carbon dioxide to produce shifted syngas. At least a portion of the shifted syngas is separated to produce a syngas feed stream. At least a portion of the syngas feed stream is converted into methanol. At least a portion of the methanol is converted into one or more alkenes (olefins). At least a portion of the methanol is reacted with carbon monoxide to produce acetic acid. Carbon dioxide produced in the process can be recycled to the gasification unit to facilitate the production of the syngas.
    Type: Application
    Filed: September 7, 2023
    Publication date: May 2, 2024
    Inventors: Chun Han, Salahdine Idrissi
  • Publication number: 20240145865
    Abstract: The present invention relates to a secondary battery wherein a coating layer is formed by coating the surface of the outermost separator of an electrode assembly with a heat-resistant material, thereby preventing heat generated by abnormal heating of a battery cell from being transferred to the outside through a case or preventing external heat from being transferred to the inside of the battery cell.
    Type: Application
    Filed: December 15, 2020
    Publication date: May 2, 2024
    Inventors: Ji Ho LEE, Dong Han KIM, Chun Mo YANG
  • Patent number: 11971565
    Abstract: An absorption type near-infrared filter comprising a first multilayer film, a second multilayer film, and an absorption film, wherein in the ultraviolet band, the difference of between the wavelength with the transmittance at 80% of the absorbing film and the wavelength with the reflectivity at 80% of the first multilayer film falls in the range between 25 nm and 37 nm, the difference of between the wavelength with the transmittance at 50% of the absorbing film and the wavelength with the reflectivity at 50% of the first multilayer film falls in the range between 6 nm and 14 nm, and the difference of between the wavelength with the transmittance at 20% of the absorbing film and the wavelength with the reflectivity at 20% of the first multilayer film falls in the range between ?6 nm and 2.5 nm.
    Type: Grant
    Filed: May 26, 2022
    Date of Patent: April 30, 2024
    Assignees: PTOT (SUZHOU) INC., PLATINUM OPTICS TECHNOLOGY INC.
    Inventors: Chung-Han Lu, Hsiao-Ching Shen, Chun-Cheng Hsieh, Ming-Zhan Wang
  • Publication number: 20240134410
    Abstract: The present disclosure discloses a memory access interface device. A clock generation circuit generates reference signals. A transmitter transmits an output command and address signal to a memory device according to the reference signals. A signal training circuit executes a training process in a training mode that includes steps outlined below. A training signal is generated such that the training signal is transmitted as the output command and address signal. The training signal and the data signal generated by the memory device are compared to generate a comparison result indicating whether the data signal matches the training signal. The comparison result is stored. The clock generation circuit is controlled to modify a phase of at least one of the reference signals to be one of a plurality of under-test phases to execute a new loop of the training process until all the under-test phases are trained.
    Type: Application
    Filed: October 24, 2022
    Publication date: April 25, 2024
    Inventors: FU-CHIN TSAI, GER-CHIH CHOU, CHUN-CHI YU, CHIH-WEI CHANG, MIN-HAN TSAI
  • Publication number: 20240134239
    Abstract: A display device including a substrate, a cholesteric liquid crystal layer, and a transparent electrode layer that are sequentially stacked is provided. The cholesteric liquid crystal layer includes cholesteric liquid crystal molecules and a plurality of transparent photoresist structures. Each of the transparent photoresist structures is a closed structure, and the cholesteric liquid crystal molecules are respectively accommodated in a plurality of patterned areas respectively surrounded by the transparent photoresist structures, so as to form a plurality of cholesteric liquid crystal patterns. The transparent electrode layer includes a plurality of sub-electrodes. The cholesteric liquid crystal patterns are respectively driven by the sub-electrodes. An orthogonal projection of each of the transparent photoresist structures on the substrate falls in an orthogonal projection of a corresponding sub-electrode of the sub-electrodes on the substrate.
    Type: Application
    Filed: October 22, 2023
    Publication date: April 25, 2024
    Applicant: AUO Corporation
    Inventors: Chun-Han Lee, Chien-Chuan Chen, Ju-Wen Chang, Hsin Chiang Chiang, Peng-Yu Chen
  • Publication number: 20240136208
    Abstract: A light-emitting element transfer system includes raw film cutting device for forming a transfer member by cutting a raw film, a stretching device for stretching a transfer film with a plurality of light-emitting elements disposed thereon, a circuit board support member for supporting a circuit board and transport head for adsorbing the transfer member and transferring the light-emitting elements on the transfer film onto the circuit board by using the adsorbed transfer member.
    Type: Application
    Filed: July 20, 2023
    Publication date: April 25, 2024
    Inventors: Jeong Won HAN, Chung Sic CHOI, Won Hee OH, Han Chun RYU, Jae Woo LEE
  • Publication number: 20240124706
    Abstract: A liquid crystal polymer, composition, liquid crystal polymer film, laminated material and method of forming liquid crystal polymer film are provided. The liquid crystal polymer includes a first repeating unit, a second repeating unit, a third repeating unit, and a fourth repeating unit. The first repeating unit has a structure of Formula (I), the second repeating unit has a structure of Formula (II), the third repeating unit has a structure of Formula (III), and the fourth repeating unit has a structure of Formula (IV), a structure of Formula (V) or a structure of Formula (VI) wherein A1, A2, A3, Z1, R1, R2, R3 and Q are as defined in the specification.
    Type: Application
    Filed: September 22, 2023
    Publication date: April 18, 2024
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yu-Lin CHU, Jen-Chun CHIU, Po- Hsien HO, Yu-Min HAN, Meng-Hsin CHEN, Chih-Hsiang LIN
  • Patent number: 11955245
    Abstract: A method and a system for mental index prediction are provided. The method includes the following steps. A plurality of images of a subject person are obtained. A plurality of emotion tags of the subject person in the images are analyzed. A plurality of integrated emotion tags in a plurality of predetermined time periods are calculated according to the emotion tags respectively corresponding to the images. A plurality of preferred features are determined according to the integrated emotion tags. A mental index prediction model is established according to the preferred features to predict a mental index according to the emotional index prediction model.
    Type: Grant
    Filed: July 2, 2021
    Date of Patent: April 9, 2024
    Assignees: Acer Incorporated, National Yang Ming Chiao Tung University
    Inventors: Chun-Hsien Li, Szu-Chieh Wang, Andy Ho, Liang-Kung Chen, Jun-Hong Chen, Li-Ning Peng, Tsung-Han Yang, Yun-Hsuan Chan, Tsung-Hsien Tsai
  • Publication number: 20240111138
    Abstract: A catadioptric optical membrane, which is disposed on a surface of a substrate, includes a reflection membrane and a matting membrane. The reflection membrane is disposed on an effective optical path area of the substrate and includes a reflection metal membrane and a reflection oxidation membrane. The reflection oxidation membrane includes a first reflection oxidation membrane and a second reflection oxidation membrane. The reflection metal membrane is farther away from the substrate than the first reflection oxidation membrane. The second reflection oxidation membrane is farther away from the substrate than the reflection metal membrane. The matting membrane is disposed on a non-effective optical path area of the substrate. The matting membrane includes a deep-color membrane and a first anti-reflection membrane. The deep-color membrane includes a deep-color metal membrane and a deep-color oxidation membrane. The deep-color membrane is farther away from the substrate than the first anti-reflection membrane.
    Type: Application
    Filed: September 27, 2023
    Publication date: April 4, 2024
    Inventors: Wen-Yu TSAI, Shih-Han CHEN, Chun-Yen CHEN, Cheng-Yu TSAI, Chun-Hung TENG
  • Publication number: 20240111078
    Abstract: A method forming a grating device includes: providing a substrate; entering the substrate into a process chamber; and depositing a grating material on the substrate to form a grating material layer on the substrate. A refractive index of the grating material gradually changes during depositing the grating material in the process chamber. The grating material layer includes a varying refractive index.
    Type: Application
    Filed: September 29, 2022
    Publication date: April 4, 2024
    Inventors: Chun-Wei HUANG, Yu-Shan TSAI, Po-Han FU
  • Patent number: 11946802
    Abstract: An ambient light sensor includes a substrate, a metasurface disposed on the substrate, and an aperture layer disposed on the substrate. The metasurface includes a plurality of nanostructures and a filling layer laterally surrounding the plurality of nanostructures. The aperture layer laterally separates the metasurface into a plurality of sub-meta groups.
    Type: Grant
    Filed: March 29, 2023
    Date of Patent: April 2, 2024
    Assignee: VISERA TECHNOLOGIES COMPANY LIMITED
    Inventors: Shih-Liang Ku, Zi-Han Liao, Chun-Wei Huang
  • Fan
    Patent number: 11946483
    Abstract: A fan is provided herein, including a housing, a hub, and a plurality of blades. The housing includes a top case and a bottom case. The hub is rotatably disposed between the top case and the bottom case in an axial direction. The blades extend from the hub in a radial direction, located between the top case and the bottom case. Each of the blades has a proximal end and a distal end. The proximal end is connected to the hub. The distal end is opposite from the proximal end, located at the other side of the blade, having at least one recessed portion. Each of the recessed portions form a passage for air.
    Type: Grant
    Filed: May 17, 2023
    Date of Patent: April 2, 2024
    Assignee: ACER INCORPORATED
    Inventors: Jau-Han Ke, Tsung-Ting Chen, Chun-Chieh Wang, Yu-Ming Lin, Cheng-Wen Hsieh, Wen-Neng Liao
  • Patent number: 11946300
    Abstract: A lever-operated latch device includes an assembly of a case body, an actuation body mounted on the case body, a linking member and a slide body. The actuation body has a free end and a pivoted end pivotally connected with the case body in cooperation with elastic members. The free end of the actuation body is formed with two protruding arms and an opening section positioned between the protruding arms. An operation section is disposed in the opening section. The linking member has a first end pivotally connected with the free end of the actuation body (or the operation section) and a second end connected with the slide body. When an operator presses the operation section, the actuation body is permitted to move from a closed position to an opened position so as to drive the linking member and the slide body to move.
    Type: Grant
    Filed: November 3, 2021
    Date of Patent: April 2, 2024
    Assignee: Fositek Corporation
    Inventors: An Szu Hsu, Chun Han Lin, Che Wei Chang
  • Publication number: 20240105849
    Abstract: A method for forming a semiconductor structure is provided. The method for forming the semiconductor structure includes forming a fin structure over a substrate in a first direction, forming a first gate stack, a second gate stack and a third gate stack across the fin structure, removing the first gate stack to form a trench, depositing a cutting structure in the trench, and forming a first contact plug between the cutting structure and the second gate stack and a second contact plug between the second gate stack and the third gate stack. The fin structure is cut into two segments by the trench. A first dimension of the first contact plug in the first direction is greater than a second dimension of the second contact plug in the first direction.
    Type: Application
    Filed: February 10, 2023
    Publication date: March 28, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Da-Zhi ZHANG, Chun-An LU, Chung-Yu CHIANG, Po-Nien CHEN, Hsiao-Han LIU, Jhon-Jhy LIAW, Chih-Yung LIN
  • Patent number: 11942556
    Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.
    Type: Grant
    Filed: April 8, 2021
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Ru Lin, Shu-Han Chen, Yi-Shao Li, Chun-Heng Chen, Chi On Chui
  • Patent number: 11940388
    Abstract: Example methods are provided to improve placement of an adaptor (210,220) to a mobile computing device (100) to measure a test strip (221) coupled to the adaptor (220) with a camera (104) and a screen (108) on a face of the mobile computing device (100). The method may include displaying a light area on a first portion of the screen (108). The first portion may be adjacent to the camera (104). The light area and the camera (104) may be aligned with a key area of the test strip (221) so that the camera (104) is configured to capture an image of the key area. The method may further include providing first guiding information for a user to place the adaptor (210,220) to the mobile computing device (100) according to a position of the light area on the screen (108).
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: March 26, 2024
    Assignee: IXENSOR CO., LTD.
    Inventors: Yenyu Chen, An Cheng Chang, Tai I Chen, Su Tung Yang, Chih Jung Hsu, Chun Cheng Lin, Min Han Wang, Shih Hao Chiu
  • Patent number: 11935932
    Abstract: In an embodiment, a device includes: a gate electrode; a epitaxial source/drain region adjacent the gate electrode; one or more inter-layer dielectric (ILD) layers over the epitaxial source/drain region; a first source/drain contact extending through the ILD layers, the first source/drain contact connected to the epitaxial source/drain region; a contact spacer surrounding the first source/drain contact; and a void disposed between the contact spacer and the ILD layers.
    Type: Grant
    Filed: July 21, 2022
    Date of Patent: March 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Han Chen, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang
  • Publication number: 20240088223
    Abstract: In a method of manufacturing a semiconductor device, a field effect transistor (FET) having a metal gate structure, a source and a drain over a substrate is formed. A first frontside contact disposed between dummy metal gate structures is formed over an isolation insulating layer. A frontside wiring layer is formed over the first frontside contact. A part of the substrate is removed from a backside of the substrate so that a bottom of the isolation insulating layer is exposed. A first opening is formed in the isolation insulating layer from the bottom of the isolation insulating layer to expose a bottom of the first frontside contact. A first backside contact is formed by filling the first opening with a conductive material to connect the first frontside contact.
    Type: Application
    Filed: March 24, 2023
    Publication date: March 14, 2024
    Inventors: Shu-Wen SHEN, Yen-Po Lin, Chun-Han Chen
  • Publication number: 20240088054
    Abstract: A carrier structure is provided with a plurality of package substrates connected via connecting sections, and a functional element and a groove are formed on the connecting section, such that the groove is located between the package substrate and the functional element. Therefore, when a cladding layer covering a chip is formed on the package substrate, the groove can accommodate a glue material overflowing from the cladding layer to prevent the glue material from contaminating the functional element.
    Type: Application
    Filed: December 8, 2022
    Publication date: March 14, 2024
    Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.
    Inventors: Shu-Ting LAI, Chiu-Lien LI, Che-Min SU, Chun-Huan HUNG, Mu-Hung HSIEH, Cheng-Han YAO, Fajanilan Darcyjo Directo, Cheng-Liang HSU
  • Publication number: 20240088930
    Abstract: Dynamic tuning method for a specific absorption rate (SAR) is provided. The dynamic tuning method is applied to user equipment (UE). The dynamic tuning method may include the following steps: the UE may determine the back-off value corresponding to the current antenna state; and the UE may tune the conducted power of the radio frequency (RF) circuit of the UE based on the back-off value.
    Type: Application
    Filed: September 8, 2022
    Publication date: March 14, 2024
    Inventors: Chun-Yen WU, Cheng-Han LEE