Patents by Inventor Chun-Hao Chang

Chun-Hao Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12237028
    Abstract: A memory circuit includes a non-volatile memory cell, a comparator and a detection circuit. The comparator is coupled to the non-volatile memory cell, and configured to generate a first output signal. The comparator including a first input terminal and a first output terminal. The first input terminal is coupled to the non-volatile memory cell by a first node, and configured to receive a first voltage. The first output terminal is configured to output the first output signal. The detection circuit is coupled to the comparator and the non-volatile memory cell. The detection circuit is configured to latch the first output signal and disrupt a current path between at least the non-volatile memory cell and the comparator. The detection circuit includes a first inverter coupled to the first output terminal of the comparator and configured to generate an inverted first output signal.
    Type: Grant
    Filed: November 29, 2023
    Date of Patent: February 25, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Hao Chang, Gu-Huan Li, Shao-Yu Chou
  • Publication number: 20250062621
    Abstract: A system includes at least one server and a power supply having multiple power supply units. After system boot-up, all power supply units in the power supply are turned on for supplying power to the at least one server. Next, the maximum output power value of the power supply and the conversion efficiency table containing the relationship between the loading rate and the conversion efficiency of the power supply are acquired, and the real-time conversion efficiency of the power supply is calculated. When it is determined based on the real-time conversion efficiency and the conversion efficiency table of the power supply that the power supply is not currently operating with an optimized conversion efficiency, one or more power supply units in the power supply are turned off or turned on according to a predetermined rule.
    Type: Application
    Filed: February 1, 2024
    Publication date: February 20, 2025
    Applicant: Wiwynn Corporation
    Inventors: Chia-Hung Yen, Chun-Hao Chang, Cheng-Kuang Hsieh
  • Publication number: 20250049316
    Abstract: An optical biometer includes a light-source module, a light-splitting module, a reference-arm, a sensing-arm and a sensing module. The light-source module emits incident-light. The light-splitting module, disposed corresponding to light-source module, divides the incident-light into reference light and sensing light. The reference-arm, disposed corresponding to light-splitting module, generates a first reflected-light according to the reference light. The sensing-arm, disposed corresponding to the light-splitting module, emits the sensing light to the eye and receives a second reflected-light from the eye. The sensing module generates a sensing result according to the first reflected-light and second reflected-light. In a first mode, the sensing light is emitted to a first position of the eye. In a second mode, the sensing light is emitted to a second position of the eye.
    Type: Application
    Filed: August 2, 2024
    Publication date: February 13, 2025
    Inventors: Yen-Jen CHANG, Tung-Yu LEE, Chun-Nan LIN, Che-Liang TSAI, Sung-Yang WEI, Hsuan-Hao CHAO, William WANG, Ching Hung LIN
  • Publication number: 20250048710
    Abstract: An integrated circuit includes a substrate having a semiconductor layer. The integrated circuit includes a transistor. The transistor includes stacked channels above the semiconductor layer, a first source/drain region in contact with the channels, and a second source/drain region in contact with the channels. A backside source/drain contact is positioned in the substrate directly below and electrically coupled to the first source/drain region. A frontside source/drain contact is directly above and electrically coupled to the first source/drain region. A bottom semiconductor structure is positioned below the second source/drain region and in contact with the semiconductor layer.
    Type: Application
    Filed: January 12, 2024
    Publication date: February 6, 2025
    Inventors: Lo-Heng CHANG, Huan-Chieh SU, Chun-Yuan CHEN, Kuo-Cheng CHIANG, Chih-Hao WANG
  • Patent number: 12211871
    Abstract: The present disclosure relates to an integrated chip including a substrate and a pixel. The pixel includes a photodetector. The photodetector is in the substrate. The integrated chip further includes a first inner trench isolation structure and an outer trench isolation structure that extend into the substrate. The first inner trench isolation structure laterally surrounds the photodetector in a first closed loop. The outer trench isolation structure laterally surrounds the first inner trench isolation structure along a boundary of the pixel in a second closed loop and is laterally separated from the first inner trench isolation structure. Further, the integrated chip includes a scattering structure that is defined, at least in part, by the first inner trench isolation structure and that is configured to increase an angle at which radiation impinges on the outer trench isolation structure.
    Type: Grant
    Filed: March 18, 2021
    Date of Patent: January 28, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Hau Wu, Chih-Kung Chang
  • Publication number: 20250022802
    Abstract: An integrated circuit (IC) with conductive structures and a method of fabricating the IC are disclosed. The method includes depositing a first dielectric layer on a semiconductor device, forming a conductive structure in the first dielectric layer, removing a portion of the first dielectric layer to expose a sidewall of the conductive structure, forming a barrier structure surrounding the sidewall of the conductive structure, depositing a conductive layer on the barrier structure, and performing a polishing process on the barrier structure and the conductive layer.
    Type: Application
    Filed: July 13, 2023
    Publication date: January 16, 2025
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Tzu Pei Chen, Sung-Li Wang, Shin-Yi Yang, Po-Chin Chang, Yuting Cheng, Chia-Hung Chu, Chun-Hung Liao, Harry CHIEN, Chia-Hao Chang, Pinyen LIN
  • Publication number: 20240297101
    Abstract: A packaging method, includes: providing a continuous multi-package structure, which includes a lead frame and a molding layer formed on the lead frame, wherein the lead frame includes a plurality of recesses formed on a bottom surface on a side of the lead frame opposite to the molding layer; forming a coating layer on the bottom surface, to cover the bottom surface and the recesses on the bottom surface; and mechanically cutting the continuous multi-package structure through the recesses, to separately form a plurality of packaging units, wherein in each of the packaging units, an exposed portion of the lead frame exposed in the recesses includes a step shape.
    Type: Application
    Filed: April 27, 2023
    Publication date: September 5, 2024
    Inventors: Yu-Lin Yang, Ming-Chih Hsu, Chun-Hao Chang
  • Publication number: 20240149057
    Abstract: A device for treating a user's skin using plasma is provided. The device comprises a plasma generation assembly and a power supply. The plasma generation assembly comprises a discharge electrode including a first surface; a first dielectric material layer provided on the first surface of the discharge electrode and the first surface, a ground electrode surrounding the discharge electrode, and an insulation member spacing around the discharge electrode from the ground electrode. The power supply configured to apply power to the plasma generation assembly so that plasma is generated from the first surface of the discharge electrode to the ground electrode and between the first dielectric material layer and the user's skin.
    Type: Application
    Filed: November 4, 2022
    Publication date: May 9, 2024
    Inventors: HUI-FANG LI, YU-TING LIN, CHUN-HAO CHANG, CHIH-TUNG LIU, CHUN-PING HSIAO, YU-PIN CHENG
  • Publication number: 20240096431
    Abstract: A memory circuit includes a non-volatile memory cell, a comparator and a detection circuit. The comparator is coupled to the non-volatile memory cell, and configured to generate a first output signal. The comparator including a first input terminal and a first output terminal. The first input terminal is coupled to the non-volatile memory cell by a first node, and configured to receive a first voltage. The first output terminal is configured to output the first output signal. The detection circuit is coupled to the comparator and the non-volatile memory cell. The detection circuit is configured to latch the first output signal and disrupt a current path between at least the non-volatile memory cell and the comparator. The detection circuit includes a first inverter coupled to the first output terminal of the comparator and configured to generate an inverted first output signal.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 21, 2024
    Inventors: Chun-Hao CHANG, Gu-Huan LI, Shao-Yu CHOU
  • Patent number: 11926901
    Abstract: A method for fabricating nonenzymatic glucose sensor, which comprises steps of: (a) providing a bottom substrate; (b) preparing a graphene layer on the bottom substrate; (c) depositing plural amount of zinc oxide (ZnO) seed crystals on the graphene layer; (d) growing the ZnO seed crystals into columnar nanorods with hydrothermal method; (e) coating a thin film of cuprous oxide (Cu2O) on the surface of the ZnO nanorods by electrochemistry-based electrodeposition; and (f) grafting single-walled carbon nanotubes (SWCNTs) on surface of the Cu2O thin film, by using Nafion fixative composited with SWCNTs. The structure of the above sensor, therefore, comprises a bottom substrate and other components orderly assembled on it, including, from inside to outside, a graphene layer, plural amount of ZnO nanorods, a Cu2O thin film, plural amount of SWCNTs, and the Nafion fixative. Accordingly, the sensor has advantages of low cost, rapid response, and easy for preservation.
    Type: Grant
    Filed: January 10, 2020
    Date of Patent: March 12, 2024
    Assignee: NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Hsi-Chao Chen, Wei-Rong Su, Yun-Cheng Yeh, Chun-Hao Chang
  • Patent number: 11877378
    Abstract: An apparatus includes a fine bubble generator, a gas supplying source, a first plasma generator, a second plasma generator, a power source and a control module. The fine bubble generator is configured to generate fine bubbles in a liquid. The gas supplying source is configured to supply a working gas. The first plasma generator is configured to generate a first plasma gas from the working gas. The second plasma generator is configured to generate a second plasma gas from the working gas. The power source is configured to supply electricity to the first plasma generator and the second plasma generator. The control module is configured to adjust the power source to provide power to the first plasma generator and the second plasma generator. The first plasma gas and the second plasma gas are directed into the liquid.
    Type: Grant
    Filed: October 8, 2021
    Date of Patent: January 16, 2024
    Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Jong-Shinn Wu, Chih-Tung Liu, Chun-Ping Hsiao, Chun-Hao Chang
  • Patent number: 11862264
    Abstract: A memory circuit includes a sense amplifier coupled to a non-volatile memory cell, and a detection circuit coupled to the sense amplifier and the non-volatile memory cell. The sense amplifier includes a comparator. The comparator includes a first input terminal coupled to the non-volatile memory cell by a first node, and configured to receive a first voltage, a second input terminal configured to receive a second voltage, and a first output terminal configured to output a first output signal. The detection circuit is configured to latch the first output signal and disrupt a current path between the non-volatile memory cell and the sense amplifier. The detection circuit includes a first inverter. A first input terminal of the first inverter is configured to receive the first output signal. A first output terminal of the first inverter is configured to generate an inverted first output signal.
    Type: Grant
    Filed: January 18, 2023
    Date of Patent: January 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Hao Chang, Gu-Huan Li, Shao-Yu Chou
  • Publication number: 20230274154
    Abstract: Aspects of the disclosure provide for interpretable anomaly detection using a generalized additive model (GAM) trained using unsupervised and supervised learning techniques. A GAM is adapted to detect anomalies using an anomaly detection partial identification (AD PID) loss function for handling noisy or heterogeneous features in model input. A semi-supervised data interpretable anomaly detection (DIAD) system can generate more accurate results over models trained for anomaly detection using strictly unsupervised techniques. In addition, output from the DIAD system includes explanations, for example as graphs or plots, of relatively important input features that contribute to the model output by different factors, providing interpretable results from which the DIAD system can be improved upon.
    Type: Application
    Filed: February 23, 2023
    Publication date: August 31, 2023
    Inventors: Jinsung Yoon, Sercan Omer Arik, Madeleine Richards Udell, Chun-Hao Chang
  • Publication number: 20230230635
    Abstract: Methods for reading a memory are provided. In response to a first address signal, a first signal is obtained according to first data of the memory and a second signal is obtained according to second data of the memory by a decoding circuit. Binary representation of the first signal is complementary to that of the second signal. A first sensing signal is provided according to a reference signal and the first signal and a second sensing signal is provided according to the reference signal and the second signal by a sensing circuit. An output corresponding to the first sensing signal or the second sensing signal is output in response to a control signal, by an output buffer.
    Type: Application
    Filed: March 23, 2023
    Publication date: July 20, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yuhsiang CHEN, Shao-Yu CHOU, Chun-Hao CHANG, Min-Shin WU, Yu-Der CHIH
  • Publication number: 20230154557
    Abstract: A memory circuit includes a sense amplifier coupled to a non-volatile memory cell, and a detection circuit coupled to the sense amplifier and the non-volatile memory cell. The sense amplifier includes a comparator. The comparator includes a first input terminal coupled to the non-volatile memory cell by a first node, and configured to receive a first voltage, a second input terminal configured to receive a second voltage, and a first output terminal configured to output a first output signal. The detection circuit is configured to latch the first output signal and disrupt a current path between the non-volatile memory cell and the sense amplifier. The detection circuit includes a first inverter. A first input terminal of the first inverter is configured to receive the first output signal. A first output terminal of the first inverter is configured to generate an inverted first output signal.
    Type: Application
    Filed: January 18, 2023
    Publication date: May 18, 2023
    Inventors: Chun-Hao CHANG, Gu-Huan LI, Shao-Yu CHOU
  • Publication number: 20230116658
    Abstract: An apparatus includes a fine bubble generator, a gas supplying source, a first plasma generator, a second plasma generator, a power source and a control module. The fine bubble generator is configured to generate fine bubbles in a liquid. The gas supplying source is configured to supply a working gas. The first plasma generator is configured to generate a first plasma gas from the working gas. The second plasma generator is configured to generate a second plasma gas from the working gas. The power source is configured to supply electricity to the first plasma generator and the second plasma generator. The control module is configured to adjust the power source to provide power to the first plasma generator and the second plasma generator. The first plasma gas and the second plasma gas are directed into the liquid.
    Type: Application
    Filed: October 8, 2021
    Publication date: April 13, 2023
    Inventors: Jong-Shinn WU, Chih-Tung LIU, Chun-Ping HSIAO, Chun-Hao CHANG
  • Patent number: 11621037
    Abstract: Memories are provided. A memory includes a first memory array, a second memory array and a read circuit. The first memory array is configured to store first data. The second memory array is configured to store second data that is complementary to the first data. The read circuit includes a decoding circuit, a sensing circuit and an output buffer. The decoding circuit is configured to provide a first signal according to the first data and a second signal according to the second data in response to an address signal. The sensing circuit is configured to provide a first sensing signal according to a reference signal and the first signal, and a second sensing signal according to the reference signal and the second signal. The output buffer is configured to provide the first sensing signal or the second sensing signal as an output according to a control signal.
    Type: Grant
    Filed: July 14, 2021
    Date of Patent: April 4, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yuhsiang Chen, Shao-Yu Chou, Chun-Hao Chang, Min-Shin Wu, Yu-Der Chih
  • Patent number: 11568948
    Abstract: A memory circuit includes a non-volatile memory cell, a sense amplifier coupled to the non-volatile memory cell, and configured to generate a first output signal, and a detection circuit coupled to the sense amplifier and the non-volatile memory cell. The detection circuit is configured to latch the first output signal and disrupt a current path between the non-volatile memory cell and the sense amplifier.
    Type: Grant
    Filed: May 13, 2021
    Date of Patent: January 31, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Hao Chang, Gu-Huan Li, Shao-Yu Chou
  • Publication number: 20220337391
    Abstract: A encryption method comprising: (a) segmenting a data stream into a plurality of equal length blocks, wherein each equal length block of the plurality of equal length blocks has a fixed length; (b) verifying the readability of the plurality of blocks segmented form the data stream, and then performing step (c) if any of blocks segmented from the data stream is sorted to be readable, and performing step (d) if the blocks segmented from the data stream are all un-readable; (c) encrypting the block that is readable; (d) encrypting the block in specific order in the sequence.
    Type: Application
    Filed: July 22, 2021
    Publication date: October 20, 2022
    Inventors: Chang Hsien Sung, Chun Hao Chang, Yu Cheng Wu
  • Publication number: 20220262446
    Abstract: A memory circuit includes a non-volatile memory cell, a sense amplifier coupled to the non-volatile memory cell, and configured to generate a first output signal, and a detection circuit coupled to the sense amplifier and the non-volatile memory cell. The detection circuit is configured to latch the first output signal and disrupt a current path between the non-volatile memory cell and the sense amplifier.
    Type: Application
    Filed: May 13, 2021
    Publication date: August 18, 2022
    Inventors: Chun-Hao CHANG, Gu-Huan LI, Shao-Yu CHOU