Patents by Inventor Chun-Hao Chang
Chun-Hao Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170345486Abstract: Systems and methods for controlling a sense amplifier are provided. First and second MOS transistors of a first type are connected in series between a first voltage potential and a node. A gate terminal of the first MOS transistor is coupled to a first data. A gate terminal of the second MOS transistor is coupled to a second data line. A third MOS transistor of a second type is connected between the node and a second voltage potential. The third MOS transistor has a gate terminal coupled to the first data line. A fourth MOS transistor of the second type is connected between the node and the second voltage potential in a parallel arrangement with the third MOS transistor. The fourth MOS transistor has a gate terminal coupled to the second data line. A control signal provided to a sense amplifier is based on a voltage of the node.Type: ApplicationFiled: December 1, 2016Publication date: November 30, 2017Inventors: CHUN-HAO CHANG, SHAO-YU CHOU, SHAWN CHEN
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Patent number: 9830979Abstract: Systems and methods for controlling a sense amplifier are provided. First and second MOS transistors of a first type are connected in series between a first voltage potential and a node. A gate terminal of the first MOS transistor is coupled to a first data. A gate terminal of the second MOS transistor is coupled to a second data line. A third MOS transistor of a second type is connected between the node and a second voltage potential. The third MOS transistor has a gate terminal coupled to the first data line. A fourth MOS transistor of the second type is connected between the node and the second voltage potential in a parallel arrangement with the third MOS transistor. The fourth MOS transistor has a gate terminal coupled to the second data line. A control signal provided to a sense amplifier is based on a voltage of the node.Type: GrantFiled: December 1, 2016Date of Patent: November 28, 2017Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chun-Hao Chang, Shao-Yu Chou, Shawn Chen
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Patent number: 9536827Abstract: The present disclosure relates to a semiconductor structure which includes a first row of diffusion strap having two sections separated by a first distance, a second row of diffusion strap having two sections separated by the first distance, a third row of diffusion strap having two sections separated by the first distance, a fourth row of diffusion strap having two sections separated by the first distance, a first row of conductive strap over the first row of diffusion strap and the second row of diffusion strap, and a second row of conductive strap over the third row of diffusion strap and the fourth row of diffusion strap. The first row of conductive strap has two sections separated by a second distance. The second row of conductive strap has having two sections separated by the second distance, wherein the second distance is greater than the first distance.Type: GrantFiled: February 26, 2016Date of Patent: January 3, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Yu Hsiang Chen, Shao-Yu Chou, Chun-Hao Chang, Liang-Chuan Chang
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Publication number: 20160226023Abstract: A laminate device is provided. The laminate device includes a substrate having a surface; a luminescent component over the surface of the substrate; a poly(p-xylylene) film over the surface of the substrate and covering the luminescent component; an interposer layer between the luminescent component and the substrate, wherein the interposer layer is bonded to both the substrate and the poly(p-xylylene) film in a covalent manner, wherein a ratio of Si—C bonds and Si—X bonds in the interposer layer is in a range from about 0.3 to about 0.8, wherein X is O or N; and a first barrier layer covering the poly(p-xylylene) film.Type: ApplicationFiled: April 14, 2016Publication date: August 4, 2016Inventors: Tai-Hung Chen, Chun-Hao Chang, Li-Wen Lai, Kun-Wei Lin
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Publication number: 20150298262Abstract: Systems and methods are provided for edge bead removal. A laser beam of approximately a wavelength is received. The laser beam is delivered along a predetermined beam path. The laser beam is projected on an edge portion of a wafer for edge bead removal.Type: ApplicationFiled: April 22, 2014Publication date: October 22, 2015Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: CHUN-HAO CHANG, HSUEH-YI CHUNG, SHANG-YUN HUANG, JUI-PING CHUANG, LI-KONG TURN, FEI-GWO TSAI
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Publication number: 20150206741Abstract: Embodiments of an apparatus for in situ steam generation oxidation are provided. The apparatus includes a reactor chamber. The apparatus also includes a radiant source over the chamber. The radiant source includes a plurality of lamps for heating the reactor chamber. The apparatus further includes a lamphead over the radiant source for adjusting the temperature of the radiant source. In addition, the apparatus includes a gas inlet system coupled to the lamphead. The gas inlet system includes a mass flow controller for adjusting the flow rate of cooling gas into the lamphead. The apparatus includes a gas outlet system, on the opposite side of the cooling gas inlet system, coupled to the lamphead. The gas outlet system includes a pressure controller for accelerating the exhaust rate of the cooling gas.Type: ApplicationFiled: January 17, 2014Publication date: July 23, 2015Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventor: Chun-Hao CHANG
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Patent number: 8975534Abstract: The invention provides a flexible base material and a flexible electronic device. The flexible base material includes a flexible substrate having a first surface and a second surface opposite to the first surface. A first organic composite barrier layer is deposited on the first surface of the flexible substrate, wherein the first organic composite barrier layer applies a first stress to the flexible substrate. An anti-curved layer is deposited on the second surface of the flexible substrate, wherein the anti-curved layer applies a second stress to the flexible substrate, and wherein the second stress applied by the anti-curved layer cancels off more than 90% of the first stress.Type: GrantFiled: December 27, 2011Date of Patent: March 10, 2015Assignee: Industrial Technology Research InstituteInventors: Li-Wen Lai, Kun-Wei Lin, Chun-Ting Chen, Chun-Hao Chang
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Publication number: 20150034011Abstract: A chemical vapor deposition apparatus and a method for forming a parylene film are provided. The chemical vapor deposition apparatus includes a buffer chamber, a deposition chamber, a pyrolysis chamber, an evaporator, and a sorter. The buffer chamber has a first valve, a second valve, and a carrying apparatus. The evaporator is connected with the second valve. The pyrolysis chamber is connected with the evaporator through a first pipe, wherein the first pipe has a third valve. The deposition chamber is connected with the pyrolysis chamber. The sorter is connected with the buffer chamber through the first valve.Type: ApplicationFiled: October 16, 2014Publication date: February 5, 2015Inventors: Chun-Hao Chang, Chuan-Sheng Chuang
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Patent number: 8889224Abstract: A method for forming a parylene film is provided, which includes following steps. Providing a chemical vapor deposition apparatus including a buffer chamber having first and second valves and a rotative carrying apparatus, an evaporator connected with the second valve, a pyrolysis chamber connected with the evaporator, and a deposition chamber connected with the pyrolysis chamber. Placing a parylene material in the rotative carrying apparatus of the buffer chamber through the first valve. Turning off the first and second valves and balancing a pressure in the buffer chamber and a pressure in the evaporator. Turning on the second valve and delivering the parylene material into the evaporator. Evaporating the parylene material in the evaporator to form a parylene gas. Pyrolyzing the parylene gas in the pyrolysis chamber to form a parylene monomer. Delivering the parylene monomer to the deposition chamber for deposition so as to form a parylene film.Type: GrantFiled: September 6, 2010Date of Patent: November 18, 2014Assignee: Industrial Technology Research instituteInventors: Chun-Hao Chang, Chuan-Sheng Zhuang
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Publication number: 20140162054Abstract: An embodiment of the present disclosure provides a laminate structure, including a substrate having a surface; a poly(p-xylylene) film over the surface of the substrate; and an interposer layer between the substrate and the poly(p-xylylene) film. The interposer layer is bonded to both the substrate and the poly(p-xylylene) film in a covalent manner, and a ratio of Si—C bonds and Si—X bonds in the interposer layer is in a range from about 0.3 to about 0.8, wherein X is O or N.Type: ApplicationFiled: December 10, 2013Publication date: June 12, 2014Applicant: Industrial Technology Research InstituteInventors: Tai-Hung Chen, Chun-Hao Chang, Li-Wen Lai, Kun-Wei Lin
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Publication number: 20140144382Abstract: A plasma apparatus including a chamber, an electrode set and a gas supplying tube set is provided. The chamber has a supporting table. The gas supplying tube set is disposed in the chamber and located between the supporting table and the electrode set. The gas supplying tube set includes at least one outer gas supplying tube and at least one first inner gas supplying tube. The first inner gas supplying tube is telescoped within the outer gas supplying tube. The outer gas supplying tube and the first inner gas supplying tube both have a plurality of gas apertures, and an amount of the gas apertures of the outer gas supplying tube is greater than an amount of the gas apertures of the first inner gas supplying tube.Type: ApplicationFiled: December 26, 2012Publication date: May 29, 2014Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ming-Hsien Ko, Li-Wen Lai, Kun-Wei Lin, Chun-Hao Chang, Tai-Hung Chen
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Patent number: 8661040Abstract: A grid-based data clustering method performed by a computer system includes a setup step, a dividing step, a categorizing step and an expanding/clustering step. The setup step sets a grid quantity and a threshold value. The dividing step divides a space containing a data set having a plurality of data points into a two-dimensional matrix. The matrix has a plurality of grids G(i,j) comprising a plurality of target sequences and a plurality of non-target sequences interlaced with the plurality of target sequences. The indices “i” and “j” of each grid G(i,j) represents the coordinate thereof. The categorizing step determines whether each of the grids is valid based on the threshold value. The expanding/clustering step respectively retrieves each of the grids of the target sequences, performs an expansion operation on each of the grids retrieved and clusters the plurality grids G(i,j).Type: GrantFiled: May 10, 2012Date of Patent: February 25, 2014Assignee: National Pingtung University of Science & TechnologyInventors: Cheng-Fa Tsai, Chun-Hao Chang
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Patent number: 8604696Abstract: A plasma excitation module including a chamber, a plurality of coils and a multi-duct gas intake system is provided. The chamber has a dielectric layer. The coils are disposed at an outer side of the dielectric layer, and the coils are separated from each other by an interval and in parallel connection. The multi-duct gas intake system surrounds the dielectric layer and is communicated with the chamber.Type: GrantFiled: June 16, 2009Date of Patent: December 10, 2013Assignee: Industrial Technology Research InstituteInventors: Tung-Ying Lin, Ming-Hsien Ko, Hui-Ta Chen, Chun-Hao Chang
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Publication number: 20130298833Abstract: An evaporation apparatus proposed includes a gas storage chamber, a first evaporator, a pressure gauge, a pyrolysis chamber and a deposition chamber. The first evaporator is connected with the gas storage chamber through a first pipe and the first pipe has a first valve. The pressure gauge is connected with the gas storage chamber through a second pipe. The pyrolysis chamber is connected with the gas storage chamber through a third pipe and the third pipe has a second valve, wherein the first evaporator is connected with the pyrolysis chamber through the gas storage chamber, and the gas storage chamber is disposed between the first evaporator and the pyrolysis chamber. The deposition chamber is connected with the pyrolysis chamber through a fourth pipe.Type: ApplicationFiled: July 11, 2013Publication date: November 14, 2013Inventors: Li-Wen Lai, Yi-Long Wang, Chun-Hao Chang, Tai-Hung Chen
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Patent number: 8518487Abstract: A method of forming an organic film is provided and includes followings. An apparatus is provided and includes a gas storage chamber, an evaporator, a pressure gauge, a pyrolysis chamber connected with the gas storage chamber, and a deposition chamber. The evaporator connects with the pyrolysis chamber through the gas storage. An organic material in the evaporator is evaporated to form organic gas, wherein the organic gas is passed into the gas storage chamber. When pressure of the organic gas in the gas storage chamber, measured by the pressure gauge, reaches a predetermined value, a valve between the evaporator and the gas storage chamber is turned off and another valve is turned on for passing the organic gas into the pyrolysis chamber. The organic gas is pyrolyzed in the pyrolysis chamber to form a monomer. The monomer is delivered to the deposition chamber for deposition to form an organic film.Type: GrantFiled: December 27, 2011Date of Patent: August 27, 2013Assignee: Industrial Technology Research InstituteInventors: Li-Wen Lai, Yi-Long Wang, Chun-Hao Chang, Tai-Hung Chen
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Publication number: 20130089667Abstract: An evaporation apparatus proposed includes a gas storage chamber, a first evaporator, a pressure gauge, a pyrolysis chamber and a deposition chamber. The first evaporator is connected with the gas storage chamber through a first pipe and the first pipe has a first valve. The pressure gauge is connected with the gas storage chamber through a second pipe. The pyrolysis chamber is connected with the gas storage chamber through a third pipe and the third pipe has a second valve. The deposition chamber is connected with the pyrolysis chamber through a fourth pipe.Type: ApplicationFiled: December 27, 2011Publication date: April 11, 2013Applicant: Industrial Technology Research InstituteInventors: Li-Wen Lai, Yi-Long Wang, Chun-Hao Chang, Tai-Hung Chen
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Publication number: 20120292084Abstract: The invention provides a flexible base material and a flexible electronic device. The flexible base material includes a flexible substrate having a first surface and a second surface opposite to the first surface. A first organic composite barrier layer is deposited on the first surface of the flexible substrate, wherein the first organic composite barrier layer applies a first stress to the flexible substrate. An anti-curved layer is deposited on the second surface of the flexible substrate, wherein the anti-curved layer applies a second stress, which is cancelled off more than 90% of the first stress, to the flexible substrate.Type: ApplicationFiled: December 27, 2011Publication date: November 22, 2012Inventors: Li-Wen LAI, Kun-Wei Lin, Chun-Ting Chen, Chun-Hao Chang
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Publication number: 20120296906Abstract: A grid-based data clustering method performed by a computer system includes a setup step, a dividing step, a categorizing step and an expanding/clustering step. The setup step sets a grid quantity and a threshold value. The dividing step divides a space containing a data set having a plurality of data points into a two-dimensional matrix. The matrix has a plurality of grids G(i,j) comprising a plurality of target sequences and a plurality of non-target sequences interlaced with the plurality of target sequences. The indices “i” and “j” of each grid G(i,j) represents the coordinate thereof. The categorizing step determines whether each of the grids is valid based on the threshold value. The expanding/clustering step respectively retrieves each of the grids of the target sequences, performs an expansion operation on each of the grids retrieved and clusters the plurality grids G(i,j).Type: ApplicationFiled: May 10, 2012Publication date: November 22, 2012Inventors: Cheng-Fa TSAI, Chun-Hao CHANG
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Patent number: 8235002Abstract: A plasma assisted apparatus for organic film deposition, comprising: a plasma chamber, capable of thermally cracking a precursor in the plasma chamber; and a deposition chamber, being channeled with the plasma chamber for receiving the thermally cracked precursor. In an exemplary embodiment, the deposition chamber further comprises a substrate device, being provided for the thermally cracked precursor to deposit thereon to form an organic film. As the plasma chamber is separated from the deposition chamber in the aforesaid apparatus, a low-temperature film deposition process can be used for forming organic films while preventing the substrate device from being bombarded directly by plasma. In addition, as there is a flow guiding device arranged at the outlet of the plasma chamber, the thermally cracked precursor is guided or disturbed and thus is prevented from overly concentrating at the outlet or the center of the substrate device.Type: GrantFiled: March 11, 2008Date of Patent: August 7, 2012Assignee: Industrial Technology Research InstituteInventors: Guo-Shing Huang, Tung-Ying Lin, Chun-Hao Chang, Herrison Wang, Teng-Yen Wabg
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Publication number: 20120145325Abstract: A plasma apparatus including a chamber, an electrode set and a gas supplying tube set is provided. The chamber has a supporting table for supporting a substrate. The gas supplying tube set is disposed in the chamber and has a plurality of gas apertures. The gas supplying tube set is located between the supporting table and the electrode set.Type: ApplicationFiled: March 10, 2011Publication date: June 14, 2012Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Hui-Ta Chen, Chun-Hao Chang, Tung-Ying Lin, Ming-Hsien Ko