Patents by Inventor Chun-Hao Chang

Chun-Hao Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170345486
    Abstract: Systems and methods for controlling a sense amplifier are provided. First and second MOS transistors of a first type are connected in series between a first voltage potential and a node. A gate terminal of the first MOS transistor is coupled to a first data. A gate terminal of the second MOS transistor is coupled to a second data line. A third MOS transistor of a second type is connected between the node and a second voltage potential. The third MOS transistor has a gate terminal coupled to the first data line. A fourth MOS transistor of the second type is connected between the node and the second voltage potential in a parallel arrangement with the third MOS transistor. The fourth MOS transistor has a gate terminal coupled to the second data line. A control signal provided to a sense amplifier is based on a voltage of the node.
    Type: Application
    Filed: December 1, 2016
    Publication date: November 30, 2017
    Inventors: CHUN-HAO CHANG, SHAO-YU CHOU, SHAWN CHEN
  • Patent number: 9830979
    Abstract: Systems and methods for controlling a sense amplifier are provided. First and second MOS transistors of a first type are connected in series between a first voltage potential and a node. A gate terminal of the first MOS transistor is coupled to a first data. A gate terminal of the second MOS transistor is coupled to a second data line. A third MOS transistor of a second type is connected between the node and a second voltage potential. The third MOS transistor has a gate terminal coupled to the first data line. A fourth MOS transistor of the second type is connected between the node and the second voltage potential in a parallel arrangement with the third MOS transistor. The fourth MOS transistor has a gate terminal coupled to the second data line. A control signal provided to a sense amplifier is based on a voltage of the node.
    Type: Grant
    Filed: December 1, 2016
    Date of Patent: November 28, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chun-Hao Chang, Shao-Yu Chou, Shawn Chen
  • Patent number: 9536827
    Abstract: The present disclosure relates to a semiconductor structure which includes a first row of diffusion strap having two sections separated by a first distance, a second row of diffusion strap having two sections separated by the first distance, a third row of diffusion strap having two sections separated by the first distance, a fourth row of diffusion strap having two sections separated by the first distance, a first row of conductive strap over the first row of diffusion strap and the second row of diffusion strap, and a second row of conductive strap over the third row of diffusion strap and the fourth row of diffusion strap. The first row of conductive strap has two sections separated by a second distance. The second row of conductive strap has having two sections separated by the second distance, wherein the second distance is greater than the first distance.
    Type: Grant
    Filed: February 26, 2016
    Date of Patent: January 3, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yu Hsiang Chen, Shao-Yu Chou, Chun-Hao Chang, Liang-Chuan Chang
  • Publication number: 20160226023
    Abstract: A laminate device is provided. The laminate device includes a substrate having a surface; a luminescent component over the surface of the substrate; a poly(p-xylylene) film over the surface of the substrate and covering the luminescent component; an interposer layer between the luminescent component and the substrate, wherein the interposer layer is bonded to both the substrate and the poly(p-xylylene) film in a covalent manner, wherein a ratio of Si—C bonds and Si—X bonds in the interposer layer is in a range from about 0.3 to about 0.8, wherein X is O or N; and a first barrier layer covering the poly(p-xylylene) film.
    Type: Application
    Filed: April 14, 2016
    Publication date: August 4, 2016
    Inventors: Tai-Hung Chen, Chun-Hao Chang, Li-Wen Lai, Kun-Wei Lin
  • Publication number: 20150298262
    Abstract: Systems and methods are provided for edge bead removal. A laser beam of approximately a wavelength is received. The laser beam is delivered along a predetermined beam path. The laser beam is projected on an edge portion of a wafer for edge bead removal.
    Type: Application
    Filed: April 22, 2014
    Publication date: October 22, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: CHUN-HAO CHANG, HSUEH-YI CHUNG, SHANG-YUN HUANG, JUI-PING CHUANG, LI-KONG TURN, FEI-GWO TSAI
  • Publication number: 20150206741
    Abstract: Embodiments of an apparatus for in situ steam generation oxidation are provided. The apparatus includes a reactor chamber. The apparatus also includes a radiant source over the chamber. The radiant source includes a plurality of lamps for heating the reactor chamber. The apparatus further includes a lamphead over the radiant source for adjusting the temperature of the radiant source. In addition, the apparatus includes a gas inlet system coupled to the lamphead. The gas inlet system includes a mass flow controller for adjusting the flow rate of cooling gas into the lamphead. The apparatus includes a gas outlet system, on the opposite side of the cooling gas inlet system, coupled to the lamphead. The gas outlet system includes a pressure controller for accelerating the exhaust rate of the cooling gas.
    Type: Application
    Filed: January 17, 2014
    Publication date: July 23, 2015
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventor: Chun-Hao CHANG
  • Patent number: 8975534
    Abstract: The invention provides a flexible base material and a flexible electronic device. The flexible base material includes a flexible substrate having a first surface and a second surface opposite to the first surface. A first organic composite barrier layer is deposited on the first surface of the flexible substrate, wherein the first organic composite barrier layer applies a first stress to the flexible substrate. An anti-curved layer is deposited on the second surface of the flexible substrate, wherein the anti-curved layer applies a second stress to the flexible substrate, and wherein the second stress applied by the anti-curved layer cancels off more than 90% of the first stress.
    Type: Grant
    Filed: December 27, 2011
    Date of Patent: March 10, 2015
    Assignee: Industrial Technology Research Institute
    Inventors: Li-Wen Lai, Kun-Wei Lin, Chun-Ting Chen, Chun-Hao Chang
  • Publication number: 20150034011
    Abstract: A chemical vapor deposition apparatus and a method for forming a parylene film are provided. The chemical vapor deposition apparatus includes a buffer chamber, a deposition chamber, a pyrolysis chamber, an evaporator, and a sorter. The buffer chamber has a first valve, a second valve, and a carrying apparatus. The evaporator is connected with the second valve. The pyrolysis chamber is connected with the evaporator through a first pipe, wherein the first pipe has a third valve. The deposition chamber is connected with the pyrolysis chamber. The sorter is connected with the buffer chamber through the first valve.
    Type: Application
    Filed: October 16, 2014
    Publication date: February 5, 2015
    Inventors: Chun-Hao Chang, Chuan-Sheng Chuang
  • Patent number: 8889224
    Abstract: A method for forming a parylene film is provided, which includes following steps. Providing a chemical vapor deposition apparatus including a buffer chamber having first and second valves and a rotative carrying apparatus, an evaporator connected with the second valve, a pyrolysis chamber connected with the evaporator, and a deposition chamber connected with the pyrolysis chamber. Placing a parylene material in the rotative carrying apparatus of the buffer chamber through the first valve. Turning off the first and second valves and balancing a pressure in the buffer chamber and a pressure in the evaporator. Turning on the second valve and delivering the parylene material into the evaporator. Evaporating the parylene material in the evaporator to form a parylene gas. Pyrolyzing the parylene gas in the pyrolysis chamber to form a parylene monomer. Delivering the parylene monomer to the deposition chamber for deposition so as to form a parylene film.
    Type: Grant
    Filed: September 6, 2010
    Date of Patent: November 18, 2014
    Assignee: Industrial Technology Research institute
    Inventors: Chun-Hao Chang, Chuan-Sheng Zhuang
  • Publication number: 20140162054
    Abstract: An embodiment of the present disclosure provides a laminate structure, including a substrate having a surface; a poly(p-xylylene) film over the surface of the substrate; and an interposer layer between the substrate and the poly(p-xylylene) film. The interposer layer is bonded to both the substrate and the poly(p-xylylene) film in a covalent manner, and a ratio of Si—C bonds and Si—X bonds in the interposer layer is in a range from about 0.3 to about 0.8, wherein X is O or N.
    Type: Application
    Filed: December 10, 2013
    Publication date: June 12, 2014
    Applicant: Industrial Technology Research Institute
    Inventors: Tai-Hung Chen, Chun-Hao Chang, Li-Wen Lai, Kun-Wei Lin
  • Publication number: 20140144382
    Abstract: A plasma apparatus including a chamber, an electrode set and a gas supplying tube set is provided. The chamber has a supporting table. The gas supplying tube set is disposed in the chamber and located between the supporting table and the electrode set. The gas supplying tube set includes at least one outer gas supplying tube and at least one first inner gas supplying tube. The first inner gas supplying tube is telescoped within the outer gas supplying tube. The outer gas supplying tube and the first inner gas supplying tube both have a plurality of gas apertures, and an amount of the gas apertures of the outer gas supplying tube is greater than an amount of the gas apertures of the first inner gas supplying tube.
    Type: Application
    Filed: December 26, 2012
    Publication date: May 29, 2014
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ming-Hsien Ko, Li-Wen Lai, Kun-Wei Lin, Chun-Hao Chang, Tai-Hung Chen
  • Patent number: 8661040
    Abstract: A grid-based data clustering method performed by a computer system includes a setup step, a dividing step, a categorizing step and an expanding/clustering step. The setup step sets a grid quantity and a threshold value. The dividing step divides a space containing a data set having a plurality of data points into a two-dimensional matrix. The matrix has a plurality of grids G(i,j) comprising a plurality of target sequences and a plurality of non-target sequences interlaced with the plurality of target sequences. The indices “i” and “j” of each grid G(i,j) represents the coordinate thereof. The categorizing step determines whether each of the grids is valid based on the threshold value. The expanding/clustering step respectively retrieves each of the grids of the target sequences, performs an expansion operation on each of the grids retrieved and clusters the plurality grids G(i,j).
    Type: Grant
    Filed: May 10, 2012
    Date of Patent: February 25, 2014
    Assignee: National Pingtung University of Science & Technology
    Inventors: Cheng-Fa Tsai, Chun-Hao Chang
  • Patent number: 8604696
    Abstract: A plasma excitation module including a chamber, a plurality of coils and a multi-duct gas intake system is provided. The chamber has a dielectric layer. The coils are disposed at an outer side of the dielectric layer, and the coils are separated from each other by an interval and in parallel connection. The multi-duct gas intake system surrounds the dielectric layer and is communicated with the chamber.
    Type: Grant
    Filed: June 16, 2009
    Date of Patent: December 10, 2013
    Assignee: Industrial Technology Research Institute
    Inventors: Tung-Ying Lin, Ming-Hsien Ko, Hui-Ta Chen, Chun-Hao Chang
  • Publication number: 20130298833
    Abstract: An evaporation apparatus proposed includes a gas storage chamber, a first evaporator, a pressure gauge, a pyrolysis chamber and a deposition chamber. The first evaporator is connected with the gas storage chamber through a first pipe and the first pipe has a first valve. The pressure gauge is connected with the gas storage chamber through a second pipe. The pyrolysis chamber is connected with the gas storage chamber through a third pipe and the third pipe has a second valve, wherein the first evaporator is connected with the pyrolysis chamber through the gas storage chamber, and the gas storage chamber is disposed between the first evaporator and the pyrolysis chamber. The deposition chamber is connected with the pyrolysis chamber through a fourth pipe.
    Type: Application
    Filed: July 11, 2013
    Publication date: November 14, 2013
    Inventors: Li-Wen Lai, Yi-Long Wang, Chun-Hao Chang, Tai-Hung Chen
  • Patent number: 8518487
    Abstract: A method of forming an organic film is provided and includes followings. An apparatus is provided and includes a gas storage chamber, an evaporator, a pressure gauge, a pyrolysis chamber connected with the gas storage chamber, and a deposition chamber. The evaporator connects with the pyrolysis chamber through the gas storage. An organic material in the evaporator is evaporated to form organic gas, wherein the organic gas is passed into the gas storage chamber. When pressure of the organic gas in the gas storage chamber, measured by the pressure gauge, reaches a predetermined value, a valve between the evaporator and the gas storage chamber is turned off and another valve is turned on for passing the organic gas into the pyrolysis chamber. The organic gas is pyrolyzed in the pyrolysis chamber to form a monomer. The monomer is delivered to the deposition chamber for deposition to form an organic film.
    Type: Grant
    Filed: December 27, 2011
    Date of Patent: August 27, 2013
    Assignee: Industrial Technology Research Institute
    Inventors: Li-Wen Lai, Yi-Long Wang, Chun-Hao Chang, Tai-Hung Chen
  • Publication number: 20130089667
    Abstract: An evaporation apparatus proposed includes a gas storage chamber, a first evaporator, a pressure gauge, a pyrolysis chamber and a deposition chamber. The first evaporator is connected with the gas storage chamber through a first pipe and the first pipe has a first valve. The pressure gauge is connected with the gas storage chamber through a second pipe. The pyrolysis chamber is connected with the gas storage chamber through a third pipe and the third pipe has a second valve. The deposition chamber is connected with the pyrolysis chamber through a fourth pipe.
    Type: Application
    Filed: December 27, 2011
    Publication date: April 11, 2013
    Applicant: Industrial Technology Research Institute
    Inventors: Li-Wen Lai, Yi-Long Wang, Chun-Hao Chang, Tai-Hung Chen
  • Publication number: 20120292084
    Abstract: The invention provides a flexible base material and a flexible electronic device. The flexible base material includes a flexible substrate having a first surface and a second surface opposite to the first surface. A first organic composite barrier layer is deposited on the first surface of the flexible substrate, wherein the first organic composite barrier layer applies a first stress to the flexible substrate. An anti-curved layer is deposited on the second surface of the flexible substrate, wherein the anti-curved layer applies a second stress, which is cancelled off more than 90% of the first stress, to the flexible substrate.
    Type: Application
    Filed: December 27, 2011
    Publication date: November 22, 2012
    Inventors: Li-Wen LAI, Kun-Wei Lin, Chun-Ting Chen, Chun-Hao Chang
  • Publication number: 20120296906
    Abstract: A grid-based data clustering method performed by a computer system includes a setup step, a dividing step, a categorizing step and an expanding/clustering step. The setup step sets a grid quantity and a threshold value. The dividing step divides a space containing a data set having a plurality of data points into a two-dimensional matrix. The matrix has a plurality of grids G(i,j) comprising a plurality of target sequences and a plurality of non-target sequences interlaced with the plurality of target sequences. The indices “i” and “j” of each grid G(i,j) represents the coordinate thereof. The categorizing step determines whether each of the grids is valid based on the threshold value. The expanding/clustering step respectively retrieves each of the grids of the target sequences, performs an expansion operation on each of the grids retrieved and clusters the plurality grids G(i,j).
    Type: Application
    Filed: May 10, 2012
    Publication date: November 22, 2012
    Inventors: Cheng-Fa TSAI, Chun-Hao CHANG
  • Patent number: 8235002
    Abstract: A plasma assisted apparatus for organic film deposition, comprising: a plasma chamber, capable of thermally cracking a precursor in the plasma chamber; and a deposition chamber, being channeled with the plasma chamber for receiving the thermally cracked precursor. In an exemplary embodiment, the deposition chamber further comprises a substrate device, being provided for the thermally cracked precursor to deposit thereon to form an organic film. As the plasma chamber is separated from the deposition chamber in the aforesaid apparatus, a low-temperature film deposition process can be used for forming organic films while preventing the substrate device from being bombarded directly by plasma. In addition, as there is a flow guiding device arranged at the outlet of the plasma chamber, the thermally cracked precursor is guided or disturbed and thus is prevented from overly concentrating at the outlet or the center of the substrate device.
    Type: Grant
    Filed: March 11, 2008
    Date of Patent: August 7, 2012
    Assignee: Industrial Technology Research Institute
    Inventors: Guo-Shing Huang, Tung-Ying Lin, Chun-Hao Chang, Herrison Wang, Teng-Yen Wabg
  • Publication number: 20120145325
    Abstract: A plasma apparatus including a chamber, an electrode set and a gas supplying tube set is provided. The chamber has a supporting table for supporting a substrate. The gas supplying tube set is disposed in the chamber and has a plurality of gas apertures. The gas supplying tube set is located between the supporting table and the electrode set.
    Type: Application
    Filed: March 10, 2011
    Publication date: June 14, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Hui-Ta Chen, Chun-Hao Chang, Tung-Ying Lin, Ming-Hsien Ko