Abstract: In a method of fabricating a semiconductor device on a substrate having a pillar pattern, a gate electrode is formed on the pillar pattern without etching the latter. A conductive pattern is filled between adjacent pillar patterns, a spacer is formed above the conductive pattern and surrounding sidewalls of each pillar pattern, and the gate electrode is formed by etching the conductive pattern using the spacer as an etch barrier.

Abstract: A method for fabricating a vertical channel transistor includes forming a structure including a plurality of trimmed pillar patterns, forming a conductive layer for a gate electrode including a seam over a resultant structure with the pillar patterns, performing an etch-back process until the seam is exposed, and forming a gate electrode by etching the etch-backed conductive layer.

Abstract: A vertical channel transistor includes a plurality of active pillar patterns extending perpendicularly from the top surface of the substrate toward an upper part. A gate insulating layer is deposited on the side wall of the active pillar pattern and serves as an ion diffusion barrier between the pillar patterns and surrounding lower gate electrodes. The resultant pillar pattern structure is encapsulated with a metal. The resultant pillar pattern is surrounded on all sides by a specified height by a sacrificial layer of Spin-On Dielectric (SOD). The metal layer is etched-back to the height of the sacrificial layer, thus forming the lower gate electrodes. A spacer layer of an insulating mater is deposited surrounding the upper part of the pillar patterns and the sacrificial layer is removed exposing a part of the lower gate electrodes. The exposed gate electrode is etched to facilitate semiconductor integration.

Abstract: The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHxFy(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CH2F2 and H2 gases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.

Abstract: The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHxFy(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CH2F2 and H2 gases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.

Abstract: A speaker for a portable phone capable of being assembled without bonding by adhesives is disclosed. The speaker has a protector having a plurality of sound holes, and having an annular tension extension formed at a periphery thereof and extended upwardly and outwardly; a frame having a stepped portion and a cylindrical wall extended upwardly from the periphery of the stepped portion and having locking means; a diaphragm seated on the stepped portion of the frame and intended to generate sound; a voice coil attached to a lower surface of the diaphragm and adapted to vibrate; a top plate disposed in the voice coil; and a magnet fixedly disposed between the top plate and the frame and adapted to generate a predetermined magnetic field.

Abstract: A speaker for a portable phone capable of being assembled without bonding by adhesives is disclosed. The speaker has a protector having a plurality of sound holes, and having an annular tension extension formed at a periphery thereof and extended upwardly and outwardly; a frame having a stepped portion and a cylindrical wall extended upwardly from the periphery of the stepped portion and having locking means; a diaphragm seated on the stepped portion of the frame and intended to generate sound; a voice coil attached to a lower surface of the diaphragm and adapted to vibrate; a top plate disposed in the voice coil; and a magnet fixedly disposed between the top plate and the frame and adapted to generate a predetermined magnetic field.