Patents by Inventor Chun-Hsiang Tu
Chun-Hsiang Tu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10038129Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: December 26, 2017Date of Patent: July 31, 2018Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Publication number: 20180138380Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: ApplicationFiled: December 26, 2017Publication date: May 17, 2018Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
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Patent number: 9893257Abstract: A light-emitting device comprises a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises an adhesion layer on the second semiconductor layer, a conductive layer on the adhesion layer, and a bonding layer on the conductive layer, and wherein the electrode structure comprises a center region and an edge region, a thickness of each layer of the edge region of the electrode structure is smaller than that of the center region.Type: GrantFiled: November 21, 2016Date of Patent: February 13, 2018Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Publication number: 20170179341Abstract: A manufacturing method of a light-emitting device comprising a first light semiconductor stack and a second semiconductor stack on thereof comprises steps of: providing a substrate with a top surface; forming a semiconductor stack on the substrate; forming a trench in the semiconductor stack to define multiple second semiconductor stacks and expose a first upper surface; forming a scribing region in the first upper surface to define multiple first semiconductor stacks; etching the scribing region to form a first side wall of each of the first semiconductor stack; and dividing the substrate along the scribing region to form multiple light-emitting devices, wherein the first side wall and the top surface form an acute angle ? between thereof, and 30°???80°, and a side surface of the substrate directly connects the top surface after the dividing step.Type: ApplicationFiled: January 23, 2017Publication date: June 22, 2017Inventors: Yen-Tai CHAO, Sen-Jung HSU, Tao-Chi CHANG, Wei-Chih WEN, Ou CHEN, Chun-Hsiang TU
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Patent number: 9640731Abstract: A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.Type: GrantFiled: August 13, 2015Date of Patent: May 2, 2017Assignee: EPISTAR CORPORATIONInventors: Chen Ou, Chun-Hsiang Tu, De-Shan Kuo, Chun-Teng Ko, Po-Shun Chiu, Chia-Liang Hsu
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Publication number: 20170077358Abstract: A light-emitting element comprises a sapphire substrate, a light-emitting stacked layer on the sapphire substrate, a first window layer under the sapphire substrate, and a DBR under the first window layer, wherein a material of the first window layer is an insulating material, wherein a thickness of the first window layer is between 300 nm and 1000 nm, wherein the DBR comprises a plurality of sublayers, and wherein a material of one of the plurality of sublayers is the same as the insulating material of the first window layer.Type: ApplicationFiled: November 22, 2016Publication date: March 16, 2017Inventors: Po-Shun Chiu, De-Shan Kuo, Chun-Hsiang Tu, Chun-Teng Ko
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Publication number: 20170069810Abstract: A light-emitting device comprises a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises an adhesion layer on the second semiconductor layer, a conductive layer on the adhesion layer, and a bonding layer on the conductive layer, and wherein the electrode structure comprises a center region and an edge region, a thickness of each layer of the edge region of the electrode structure is smaller than that of the center region.Type: ApplicationFiled: November 21, 2016Publication date: March 9, 2017Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
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Publication number: 20170040491Abstract: A light-emitting device comprises a substrate having an top surface; a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the top surface and exposes an exposing portion of the top surface; a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the exposing portion of the top surface form an acute angle a between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle ? between thereof.Type: ApplicationFiled: October 21, 2016Publication date: February 9, 2017Inventors: Yen-Tai CHAO, Sen-Jung HSU, Tao-Chi CHANG, Wei-Chih WEN, Ou CHEN, Yu-Shou WANG, Chun-Hsiang TU, Jing-Feng HUANG
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Patent number: 9548420Abstract: A light-emitting device comprises a substrate comprising a top surface; a light-emitting stack formed on a portion of the top surface of the substrate; and a plurality of pores formed in an area of the substrate, wherein the area is under another portion of the top surface where the light-emitting stack is not formed thereon.Type: GrantFiled: April 20, 2015Date of Patent: January 17, 2017Assignee: EPISTAR CORPORATIONInventors: Chun-Hsiang Tu, De-Shan Kuo, Po-Shun Chiu, Chi-Shiang Hsu
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Patent number: 9530948Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: February 22, 2016Date of Patent: December 27, 2016Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Patent number: 9508901Abstract: A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern.Type: GrantFiled: August 29, 2013Date of Patent: November 29, 2016Assignee: EPISTAR CORPORATIONInventors: Juin-Yang Chen, De-Shan Kuo, Chun-Hsiang Tu, Po-Shun Chiu, Chien-Kai Chung, Hui-Chun Yeh, Min-Yen Tsai, Tsun-Kai Ko, Chun-Teng Ko
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Publication number: 20160308095Abstract: A light-emitting device comprises a substrate comprising a top surface; a light-emitting stack formed on a portion of the top surface of the substrate; and a plurality of pores formed in an area of the substrate, wherein the area is under another portion of the top surface where the light-emitting stack is not formed thereon.Type: ApplicationFiled: April 20, 2015Publication date: October 20, 2016Inventors: Chun-Hsiang TU, De-Shan KUO, Po-Shun CHIU, Chi-Shiang HSU
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Publication number: 20160276535Abstract: A light emitting device, includes: a substrate, including a top surface, a bottom surface, a first side surface connecting the top surface and the bottom surface, a first group of deteriorated region, and a second group of deteriorated region; and a semiconductor stack formed on the top surface of the substrate, wherein the first side surface includes a first group of convex region and a first group of concave region, wherein the first group of convex region includes the first group of deteriorated region, and the first group of concave region includes the second group of deteriorated region.Type: ApplicationFiled: March 18, 2016Publication date: September 22, 2016Inventors: Tzu-Chin LIN, Ying-Chieh CHEN, Chi-Shiang HSU, De Shan KUO, Chun-Hsiang TU, Po-Shun CHIU
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Publication number: 20160172557Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: ApplicationFiled: February 22, 2016Publication date: June 16, 2016Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
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Patent number: 9293656Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: April 1, 2013Date of Patent: March 22, 2016Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Patent number: 9231164Abstract: A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region.Type: GrantFiled: April 12, 2013Date of Patent: January 5, 2016Assignee: EPISTAR CORPORATIONInventors: Ting-Chia Ko, De-Shan Kuo, Chun-Hsiang Tu, Po-Shun Chiu, Chien-Kai Chung, Hui-Chun Yeh, Min-Yen Tsai, Tsun-Kai Ko
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Publication number: 20150349210Abstract: A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.Type: ApplicationFiled: August 13, 2015Publication date: December 3, 2015Inventors: Chen Ou, Chun-Hsiang Tu, De-Shan Kuo, Chun-Teng Ko, Po-Shun Chiu, Chia-Liang Hsu
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Patent number: 9112117Abstract: A light-emitting diode structure comprising: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrical pad on the substrate, wherein the first electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the first semiconductor layer; and a second electrical pad on the substrate, wherein the second electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the second semiconductor layer, wherein the first electrical pad and the second electrical pad are not higher than the light-emitting semiconductor stack.Type: GrantFiled: March 15, 2013Date of Patent: August 18, 2015Assignee: EPISTAR CORPORATIONInventors: Chia-Liang Hsu, Chen Ou, Chun-Hsiang Tu, De-Shan Kuo, Ting-Chia Ko, Po-Shun Chiu
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Publication number: 20150060909Abstract: A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern.Type: ApplicationFiled: August 29, 2013Publication date: March 5, 2015Applicant: Epistar CorporationInventors: Juin-Yang CHEN, De-Shan KUO, Chun-Hsiang TU, Po-Shun CHIU, Chien-Kai CHUNG, Hui-Chun YEH, Min-Yen TSAI, Tsun-Kai KO, Chun-Teng KO
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Patent number: 8928022Abstract: A light-emitting device comprising: a light-emitting stacked layer having a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer; a transparent conductive oxide layer formed on the second conductivity type semiconductor layer wherein the transparent conductive oxide layer having a first portion and a second portion and the upper surface of the transparent conductive oxide layer is a textured surface; a first electrode formed on the second portion of the transparent conductive oxide layer, and a second electrode formed on the first conductivity type semiconductor layer; a planarization layer formed on the first portion of the transparent conductive oxide layer, and the second electrode; and a reflective layer formed on the planarization layer that is devoid of the first electrode and the second electrode.Type: GrantFiled: July 2, 2013Date of Patent: January 6, 2015Assignee: Epistar CorporationInventors: De-Shan Kuo, Chun-Hsiang Tu, Po-Shun Chiu, Chun-Teng Ko, Min-Hsun Hsieh