Patents by Inventor Chun-Hsiang Tu

Chun-Hsiang Tu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10038129
    Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: July 31, 2018
    Assignee: EPISTAR CORPORATION
    Inventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
  • Publication number: 20180138380
    Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.
    Type: Application
    Filed: December 26, 2017
    Publication date: May 17, 2018
    Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
  • Patent number: 9893257
    Abstract: A light-emitting device comprises a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises an adhesion layer on the second semiconductor layer, a conductive layer on the adhesion layer, and a bonding layer on the conductive layer, and wherein the electrode structure comprises a center region and an edge region, a thickness of each layer of the edge region of the electrode structure is smaller than that of the center region.
    Type: Grant
    Filed: November 21, 2016
    Date of Patent: February 13, 2018
    Assignee: EPISTAR CORPORATION
    Inventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
  • Publication number: 20170179341
    Abstract: A manufacturing method of a light-emitting device comprising a first light semiconductor stack and a second semiconductor stack on thereof comprises steps of: providing a substrate with a top surface; forming a semiconductor stack on the substrate; forming a trench in the semiconductor stack to define multiple second semiconductor stacks and expose a first upper surface; forming a scribing region in the first upper surface to define multiple first semiconductor stacks; etching the scribing region to form a first side wall of each of the first semiconductor stack; and dividing the substrate along the scribing region to form multiple light-emitting devices, wherein the first side wall and the top surface form an acute angle ? between thereof, and 30°???80°, and a side surface of the substrate directly connects the top surface after the dividing step.
    Type: Application
    Filed: January 23, 2017
    Publication date: June 22, 2017
    Inventors: Yen-Tai CHAO, Sen-Jung HSU, Tao-Chi CHANG, Wei-Chih WEN, Ou CHEN, Chun-Hsiang TU
  • Patent number: 9640731
    Abstract: A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.
    Type: Grant
    Filed: August 13, 2015
    Date of Patent: May 2, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Chen Ou, Chun-Hsiang Tu, De-Shan Kuo, Chun-Teng Ko, Po-Shun Chiu, Chia-Liang Hsu
  • Publication number: 20170077358
    Abstract: A light-emitting element comprises a sapphire substrate, a light-emitting stacked layer on the sapphire substrate, a first window layer under the sapphire substrate, and a DBR under the first window layer, wherein a material of the first window layer is an insulating material, wherein a thickness of the first window layer is between 300 nm and 1000 nm, wherein the DBR comprises a plurality of sublayers, and wherein a material of one of the plurality of sublayers is the same as the insulating material of the first window layer.
    Type: Application
    Filed: November 22, 2016
    Publication date: March 16, 2017
    Inventors: Po-Shun Chiu, De-Shan Kuo, Chun-Hsiang Tu, Chun-Teng Ko
  • Publication number: 20170069810
    Abstract: A light-emitting device comprises a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises an adhesion layer on the second semiconductor layer, a conductive layer on the adhesion layer, and a bonding layer on the conductive layer, and wherein the electrode structure comprises a center region and an edge region, a thickness of each layer of the edge region of the electrode structure is smaller than that of the center region.
    Type: Application
    Filed: November 21, 2016
    Publication date: March 9, 2017
    Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
  • Publication number: 20170040491
    Abstract: A light-emitting device comprises a substrate having an top surface; a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the top surface and exposes an exposing portion of the top surface; a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the exposing portion of the top surface form an acute angle a between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle ? between thereof.
    Type: Application
    Filed: October 21, 2016
    Publication date: February 9, 2017
    Inventors: Yen-Tai CHAO, Sen-Jung HSU, Tao-Chi CHANG, Wei-Chih WEN, Ou CHEN, Yu-Shou WANG, Chun-Hsiang TU, Jing-Feng HUANG
  • Patent number: 9548420
    Abstract: A light-emitting device comprises a substrate comprising a top surface; a light-emitting stack formed on a portion of the top surface of the substrate; and a plurality of pores formed in an area of the substrate, wherein the area is under another portion of the top surface where the light-emitting stack is not formed thereon.
    Type: Grant
    Filed: April 20, 2015
    Date of Patent: January 17, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Chun-Hsiang Tu, De-Shan Kuo, Po-Shun Chiu, Chi-Shiang Hsu
  • Patent number: 9530948
    Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.
    Type: Grant
    Filed: February 22, 2016
    Date of Patent: December 27, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
  • Patent number: 9508901
    Abstract: A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern.
    Type: Grant
    Filed: August 29, 2013
    Date of Patent: November 29, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Juin-Yang Chen, De-Shan Kuo, Chun-Hsiang Tu, Po-Shun Chiu, Chien-Kai Chung, Hui-Chun Yeh, Min-Yen Tsai, Tsun-Kai Ko, Chun-Teng Ko
  • Publication number: 20160308095
    Abstract: A light-emitting device comprises a substrate comprising a top surface; a light-emitting stack formed on a portion of the top surface of the substrate; and a plurality of pores formed in an area of the substrate, wherein the area is under another portion of the top surface where the light-emitting stack is not formed thereon.
    Type: Application
    Filed: April 20, 2015
    Publication date: October 20, 2016
    Inventors: Chun-Hsiang TU, De-Shan KUO, Po-Shun CHIU, Chi-Shiang HSU
  • Publication number: 20160276535
    Abstract: A light emitting device, includes: a substrate, including a top surface, a bottom surface, a first side surface connecting the top surface and the bottom surface, a first group of deteriorated region, and a second group of deteriorated region; and a semiconductor stack formed on the top surface of the substrate, wherein the first side surface includes a first group of convex region and a first group of concave region, wherein the first group of convex region includes the first group of deteriorated region, and the first group of concave region includes the second group of deteriorated region.
    Type: Application
    Filed: March 18, 2016
    Publication date: September 22, 2016
    Inventors: Tzu-Chin LIN, Ying-Chieh CHEN, Chi-Shiang HSU, De Shan KUO, Chun-Hsiang TU, Po-Shun CHIU
  • Publication number: 20160172557
    Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.
    Type: Application
    Filed: February 22, 2016
    Publication date: June 16, 2016
    Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
  • Patent number: 9293656
    Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.
    Type: Grant
    Filed: April 1, 2013
    Date of Patent: March 22, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
  • Patent number: 9231164
    Abstract: A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region.
    Type: Grant
    Filed: April 12, 2013
    Date of Patent: January 5, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Ting-Chia Ko, De-Shan Kuo, Chun-Hsiang Tu, Po-Shun Chiu, Chien-Kai Chung, Hui-Chun Yeh, Min-Yen Tsai, Tsun-Kai Ko
  • Publication number: 20150349210
    Abstract: A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.
    Type: Application
    Filed: August 13, 2015
    Publication date: December 3, 2015
    Inventors: Chen Ou, Chun-Hsiang Tu, De-Shan Kuo, Chun-Teng Ko, Po-Shun Chiu, Chia-Liang Hsu
  • Patent number: 9112117
    Abstract: A light-emitting diode structure comprising: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrical pad on the substrate, wherein the first electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the first semiconductor layer; and a second electrical pad on the substrate, wherein the second electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the second semiconductor layer, wherein the first electrical pad and the second electrical pad are not higher than the light-emitting semiconductor stack.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: August 18, 2015
    Assignee: EPISTAR CORPORATION
    Inventors: Chia-Liang Hsu, Chen Ou, Chun-Hsiang Tu, De-Shan Kuo, Ting-Chia Ko, Po-Shun Chiu
  • Publication number: 20150060909
    Abstract: A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern.
    Type: Application
    Filed: August 29, 2013
    Publication date: March 5, 2015
    Applicant: Epistar Corporation
    Inventors: Juin-Yang CHEN, De-Shan KUO, Chun-Hsiang TU, Po-Shun CHIU, Chien-Kai CHUNG, Hui-Chun YEH, Min-Yen TSAI, Tsun-Kai KO, Chun-Teng KO
  • Patent number: 8928022
    Abstract: A light-emitting device comprising: a light-emitting stacked layer having a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer; a transparent conductive oxide layer formed on the second conductivity type semiconductor layer wherein the transparent conductive oxide layer having a first portion and a second portion and the upper surface of the transparent conductive oxide layer is a textured surface; a first electrode formed on the second portion of the transparent conductive oxide layer, and a second electrode formed on the first conductivity type semiconductor layer; a planarization layer formed on the first portion of the transparent conductive oxide layer, and the second electrode; and a reflective layer formed on the planarization layer that is devoid of the first electrode and the second electrode.
    Type: Grant
    Filed: July 2, 2013
    Date of Patent: January 6, 2015
    Assignee: Epistar Corporation
    Inventors: De-Shan Kuo, Chun-Hsiang Tu, Po-Shun Chiu, Chun-Teng Ko, Min-Hsun Hsieh