Abstract: A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region.

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

Abstract: A light-emitting element includes a substrate; a light-emitting stacked layer on the substrate; a first window layer under the substrate; and a DBR under the first window layer; wherein the first window layer has a width substantially equal to that of the substrate in a cross-sectional view.

Abstract: A light-emitting device comprising: a light-emitting stacked layer having a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer; a transparent conductive oxide layer formed on the second conductivity type semiconductor layer wherein the transparent conductive oxide layer having a first portion and a second portion and the upper surface of the transparent conductive oxide layer is a textured surface; a first electrode formed on the second portion of the transparent conductive oxide layer, and a second electrode formed on the first conductivity type semiconductor layer; a planarization layer formed on the first portion of the transparent conductive oxide layer, and the second electrode; and a reflective layer formed on the planarization layer that is devoid of the first electrode and the second electrode.

Abstract: A light-emitting diode structure comprising: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrical pad on the substrate, wherein the first electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the first semiconductor layer; and a second electrical pad on the substrate, wherein the second electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the second semiconductor layer, wherein the first electrical pad and the second electrical pad are not higher than the light-emitting semiconductor stack.

Abstract: A method of fabricating a light emitting device comprising: providing a substrate; forming an epitaxial stack on the substrate wherein the epitaxial stack comprising a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer; forming a mesa on the epitaxial stack to expose partial of the first conductivity semiconductor layer; and etching the surface of the first conductivity semiconductor layer and forming a least one rough structure on the surface of the first conductivity semiconductor layer wherein the first conductivity semiconductor layer is sandwiched by the substrate and the active layer.

Abstract: A method of fabricating a light emitting device comprising: providing a substrate; forming an epitaxial stack on the substrate wherein the epitaxial stack comprising a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer; forming a mesa on the epitaxial stack to expose partial of the first conductivity semiconductor layer; layer and etching the surface of the first conductivity semiconductor layer and forming a least one rough structure on the surface of the first conductivity semiconductor layer wherein the first conductivity semiconductor layer is sandwiched by the substrate and the active layer.