Abstract: A method for designing a stressor pattern is described, wherein the stressor pattern is used to form S/D regions of a second-type MOS transistor. A first distance between a boundary of the stressor pattern and a first active area of a first-type MOS transistor is derived. If the first distance is less than a safe distance, the stressor pattern is shrunk to make the first distance at least equal to the safe distance.

Abstract: A method of manufacturing doping patterns includes providing a substrate having a plurality of STIs defining and electrically isolating a plurality of active regions in the substrate, forming a patterned photoresist having a plurality of exposing regions for exposing the active regions and the STIs in between the active regions on the substrate, and performing an ion implantation to form a plurality of doping patterns in the active regions.

Abstract: A method for fabricating a semiconductor layout includes providing a first layout having a plurality of line patterns and a second layout having a plurality of connection patterns, defining at least a first to-be-split pattern overlapping with the connection pattern among the line patterns, splitting the first to-be-split pattern at where the first to-be-split pattern overlapping with the connection pattern, decomposing the first layout to form a third layout and a fourth layout, and outputting the third layout and the further layout to a first mask and a second mask respectively.

Abstract: A method to compensate optical proximity correction adapted for a photolithography process includes providing an integrated circuit (IC) layout. The IC layout includes active regions, a shallow trench isolation (STI) region and ion implant regions overlapped with a part of the STI region and at least a part of the active regions. Subsequently, at least a photoresist line width compensation region disposed in the STI region is acquired in a photoresist covering region outside the ion implant regions according to the IC layout. Afterwards, the IC layout is corrected according to a width of the photoresist line width compensation region, a length of a side of the active region facing a side of the photoresist line width compensation region and a distance from the side of the photoresist line width compensation region to the active region facing the side. Then, the corrected IC layout is transferred to a photomask.

Abstract: A replaceable assembling element for fixing structures is suitable for an electronic device. The electronic device has a first structure component and a second structure component. The assembling element includes a main part and a hook part. The main part is fixed at the first structure component, the hook part is connected to the main part and buckled to the second structure component so as to lock the first structure component to the second structure component firmly. In addition, an assembling method for structure components of an electronic device is also involved.

Abstract: A method to compensate optical proximity correction adapted for a photolithography process includes providing an integrated circuit (IC) layout. The IC layout includes active regions, a shallow trench isolation (STI) region and ion implant regions overlapped with a part of the STI region and at least a part of the active regions. Subsequently, at least a photoresist line width compensation region disposed in the STI region is acquired in a photoresist covering region outside the ion implant regions according to the IC layout. Afterwards, the IC layout is corrected according to a width of the photoresist line width compensation region, a length of a side of the active region facing a side of the photoresist line width compensation region and a distance from the side of the photoresist line width compensation region to the active region facing the side. Then, the corrected IC layout is transferred to a photomask.

Abstract: A layout pattern is disclosed. The layout pattern includes: a polygon pattern having at least one segment; and at least one notch formed in the polygon pattern, wherein at least one side of the notch is less than the length of the segment.

Abstract: A method to compensate optical proximity correction adapted for a photolithography process is provided. An integrated circuit (IC) layout firstly is provided. The IC layout includes active regions and a shallow trench isolation (STI) region. The STI region is a region except the active regions. The IC layout further includes ion implant regions which are overlapped with a part of the STI region and at least a part of the active regions. Subsequently, at least a photoresist line width compensation region is acquired in a photoresist covering region outside the ion implant regions according to the IC layout. Each photoresist line width compensation region is disposed in the STI region. Afterwards, the IC layout is corrected according to a width of the photoresist line width compensation region, a length of a side of the active region facing a side of the photoresist line width compensation region and a distance from the side of the photoresist line width compensation region to the active region facing the side.

Abstract: A method for correcting layout pattern is disclosed. The method includes the steps of: providing a layout pattern having at least one segment; forming a rule-checking rectangle from the segment, wherein the rule-checking rectangle comprises at least one square; verifying whether the square of the rule-checking rectangle overlaps other layout pattern; removing the portion of other layout pattern overlapped by the square to obtain a corrected layout pattern; and outputting the corrected layout pattern to a mask.

Abstract: A method to compensate optical proximity correction adapted for a photolithography process is provided. An integrated circuit (IC) layout firstly is provided. The IC layout includes active regions and a shallow trench isolation (STI) region. The STI region is a region except the active regions. The IC layout further includes ion implant regions which are overlapped with a part of the STI region and at least a part of the active regions. Subsequently, at least a photoresist line width compensation region is acquired in a photoresist covering region outside the ion implant regions according to the IC layout. Each photoresist line width compensation region is disposed in the STI region. Afterwards, the IC layout is corrected according to a width of the photoresist line width compensation region, a length of a side of the active region facing a side of the photoresist line width compensation region and a distance from the side of the photoresist line width compensation region to the active region facing the side.

Abstract: A method of manufacturing doping patterns includes providing a substrate having a plurality of STIs defining and electrically isolating a plurality of active regions in the substrate, forming a patterned photoresist having a plurality of exposing regions for exposing the active regions and the STIs in between the active regions on the substrate, and performing an ion implantation to form a plurality of doping patterns in the active regions.

Abstract: The present invention provides a microphone's quick-coupling wireless structure, which combines a wireless module with a quick-coupling switching device, whereby a wired microphone of common dimension is integrated so as to become a multi-functional quick-coupling wireless microphone; in practice, the switching device is incorporated onto the main body of the microphone by means of quick-coupling so as to form a wireless microphone; the switching device can modulate the audio signals received by original wired microphone into RF waves, which are transmitted by wireless module and received by a wireless receiver for tuning and demodulation; finally, the signals are processed with respect to the quality and volume, and then audio signals are output as a way of switching the wired microphone into a wireless one.

Abstract: A method for correcting layout pattern is disclosed. The method includes the steps of: providing a layout pattern having at least one segment; forming a rule-checking rectangle from the segment, wherein the rule-checking rectangle comprises at least one square; verifying whether the square of the rule-checking rectangle overlaps other layout pattern; removing the portion of other layout pattern overlapped by the square to obtain a corrected layout pattern; and outputting the corrected layout pattern to a mask.

Abstract: A heat dissipating unit includes a hat-shaped body of a metal layered structure having: a copper alloy layer having upper and lower surfaces; a nickel layer formed on the upper surface of the copper alloy layer; a chrome layer formed on the nickel layer; and a metal oxide layer formed on the lower surface of the copper alloy layer. A semiconductor device includes: a substrate; a semiconductor chip mounted on the substrate; and a hat-shaped body of a metal layered structure mounted on the substrate and defining an inner space to receive the semiconductor chip therein.

Abstract: In a heat dissipating assembly, a base frame is disposed underneath a circuit board and includes a bottom part with opposite first and second sides that are formed with first and second engaging units, respectively. The first and second engaging units extend upwardly through a set of through holes in the circuit board. A heat-dissipating module is mounted on the circuit board and includes a heat transfer plate to establish heat-conductive contact with an electronic component on the circuit board. An anchoring device includes a first anchoring unit that engages the first engaging unit, a second anchoring unit that engages the second engaging unit, and an abutting unit connected to the first and second anchoring units. The anchoring device biases the heat transfer plate toward the electronic component when the first and second anchoring units engage the first and second engaging units.

Abstract: Novel immunogenic &bgr;-propionamido-linked polysaccharide- and N-propionamido-linked oligosaccharide-protein conjugates are provided as well as method of producing the conjugates. The conjugation procedure is simple, rapid, reproducible and applicable to a variety of polysaccharides or oligosaccharides derived from bacterial species, yeast, cancer cells or chemically synthesized. Vaccines and methods of immunization against infection or cancer using the immunogenic &bgr;-propionamido-linked polysaccharide- and &bgr;-propionamido-linked oligosaccharide-protein conjugates are also disclosed.

Abstract: In a heat dissipating assembly, a base frame is disposed underneath a circuit board and includes a bottom part with opposite first and second sides that are formed with first and second engaging units, respectively. The first and second engaging units extend upwardly through a set of through holes in the circuit board. A heat-dissipating module is mounted on the circuit board and includes a heat transfer plate to establish heat-conductive contact with an electronic component on the circuit board. An anchoring device includes a first anchoring unit that engages the first engaging unit, a second anchoring unit that engages the second engaging unit, and an abutting unit connected to the first and second anchoring units. The anchoring device biases the heat transfer plate toward the electronic component when the first and second anchoring units engage the first and second engaging units.

Abstract: A parallel transmission device for reflection means and scanning means of a scanner, comprises fixing stage, reflection means, scanning means, fixing module, belt wheel, idle wheel, belt, tight wire, and driving means, wherein the reflection means is driven by the belt and can drive the scanning means by the tight wire to ensure that the scanning means and reflection means has a parallel movement therebetween, and has a speed ratio 2:1, i.e. the reflection means moves only half of the distance of the scanning means, thus reducing the space reserved for the movement of the reflection means and saving the internal space of the scanner.

Abstract: Immunoassay for isothiazolones based on monoclonal antibodies that react with isothiazolones, particularly, 5-chloro-2-methyl-3-isothiazolone, hybridomas that produce such antibodies, especially ATCC HB 11435, a method of preparing an immunogenic conjugate of isothiazolones and a macromolecule carrier, a method of producing monoclonal antibodies reactive with isothiazolones, and compositions comprising monoclonal or polyclonal antibodies reactive with isothiazolones.