Abstract: A semiconductor device includes a semiconductor substrate, a first epitaxial feature having a first semiconductor material over the semiconductor substrate, and a second epitaxial feature having a second semiconductor material over the semiconductor substrate. The second semiconductor material being different from the first semiconductor material. The semiconductor device further includes a first silicide layer on the first epitaxial feature, a second silicide layer on the second epitaxial feature, a metal layer on the first silicide layer, a first contact feature over the metal layer, and a second contact feature over the second silicide layer. A first number of layers between the first contact feature and the first epitaxial feature is greater than a second number of layers between the second contact feature and the second epitaxial feature.

Abstract: A hybrid power supply system and a method for extending a power supply time of a secondary battery thereof are provided. The method comprises: a detection unit detecting the magnitude of a load and outputting it to a control unit; wherein when a mains electricity is normal during peak hours, an initial alternating current from the mains electricity is input to a silicon-controlled rectifier, the silicon-controlled rectifier outputs a rectified alternating current, the rectified alternating current is converted into a first direct current to be output an inverter; a control unit controlling a secondary battery to output a second direct current to the inverter during a power supply time according to the magnitude of the load; the first direct current and the second direct current being respectively converted by the inverter and supplied to the load, thereby extending the power supply time of the second battery.

Abstract: Systems, methods, circuits, and apparatus for managing multi-block operations in memory devices are provided. In one aspect, a memory device includes a memory cell array including at least two blocks, a bit line coupled to a string of memory cells in each of the at least two blocks respectively, a common source line (CSL) coupled to strings coupled to the bit line in the at least two blocks, and a circuitry configured to perform a multi-block operation in the memory cell array by at least one of: forming a first current path from the bit line through the strings to the CSL coupled to a ground to discharge a capacitor associated with the bit line that is pre-charged, or forming a second current path from the CSL coupled to a supply voltage through the strings to the bit line to charge the capacitor that is pre-discharged.

Abstract: A method for intermittently discharging an inverter in an energy storage apparatus and an energy storage apparatus using the method are disclosed. The method includes a protection step; and an intermittent discharge step, which includes having a battery management system detect a charge level of a capacitor and send it to a control unit, and when the charge level is below an activation threshold, having the control unit control a battery pack to perform a first discharge procedure to charge the capacitor for at least two times intermittently until the charge level reaches the activation threshold, thereby providing fast charge for the capacitor.

Abstract: A device includes an active region, a gate structure, a source/drain epitaxial structure, an epitaxial layer, a metal alloy layer, a contact, and a contact etch stop layer. The gate structure is across the active region. The source/drain epitaxial structure is over the active region and adjacent the gate structure. The epitaxial layer is over the source/drain epitaxial structure. The metal alloy layer is over the epitaxial layer. The contact is over the metal alloy layer. The contact etch stop layer lines sidewalls of the source/drain epitaxial structure. The metal alloy layer is spaced apart from the contact etch stop layer.

Abstract: An exposure device and method for semiconductor manufacturing, focusing on the creation of exposure patterns with High Dynamic Range (HDR) capabilities, is disclosed. The exposure device includes a laser source, a first spatial light modulator (SLM), specifically a Liquid Crystal on Silicon (LCOS) device, and a second SLM, specifically a Digital Micromirror Device (DMD). The LCOS is positioned upstream in the optical path and is optimized for modulating the phase of the laser. It also directs the laser light towards specific areas on the DMD, crucial for enhancing detail and contrast in exposure patterns. The DMD, placed downstream, is composed of micromirrors that modulate the amplitude of the reflected laser, essential for achieving HDR in exposure patterns. This cooperative interaction between the LCOS and DMD allows for the creation of exposure patterns with a wide range of light intensities, from very bright to very dark, thereby achieving high dynamic range.

Abstract: Systems, devices, methods, and circuits for managing content addressable memory (CAM) devices. In one aspect, a semiconductor device includes: a memory cell array configured to store data in memory cells, and a circuitry coupled to the memory cell array and configured to execute a search operation in the memory cell array according to a search instruction. The search instruction includes at least one of search data or an option code, and the option code specifies, for the search operation, at least one of a search length or a search depth.

Abstract: The present disclosure pertains to a photomask cleaning device suitable for cleaning a photomask. The interior of the photomask cleaning device is equipped with a cleaning area and a photomask flipping area. The photomask has a first surface and a second surface, with a pattern and a photomask protective film set on the first surface. The photomask protective film covers the pattern. The photomask cleaning device includes a photomask flipping mechanism, a transport mechanism, and at least one cleaning mechanism. The photomask flipping mechanism is located within the photomask flipping area and is configured to flip the photomask. Additionally, the transport mechanism is used to transport the photomask, enabling the photomask to move between the photomask flipping area and the cleaning area. The cleaning mechanism is located within the cleaning area and is used to clean the photomask.

Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.

Abstract: A logic cell structure includes a first portion, a second portion and a third portion. The first portion, arranged to be a first layout of a first semiconductor element, is placed in a first cell row of a substrate area extending in a first direction. The second portion, arranged to be a second layout of a second semiconductor element, is placed in a second cell row of the substrate area. The third portion is arranged to be a third layout of an interconnecting path used for coupling the first semiconductor element and the second semiconductor element. The first, second and third portions are bounded by a bounding box with a height in a second direction and a width in the first direction. Respective centers of the first portion and the second portion are arranged in a third direction different from each of the first direction and the second direction.

Abstract: Present disclosure provides a FinFET structure, including a substrate, a fin protruding from the substrate, including a first portion and a second portion below the first portion, wherein the first portion includes a first dopant concentration of a dopant, and the second portion includes a second dopant concentration of the dopant, the second dopant concentration is greater than the first dopant concentration, a gate over the fin, wherein the second portion of the fin is below a bottom surface of the gate, and an insulating layer over the substrate and proximal to the second portion of the fin, wherein at least a first portion of the insulating layer includes a third dopant concentration of the dopant, the third dopant concentration is greater than the first dopant concentration.

Abstract: A striking practice device includes a striking body, a cover, a connecting rod and an outer fixing plate. The striking body includes a hollow portion inside, an assembly hole formed along a direction of the striking body and a cover bole formed along another direction of the striking body. The assembly hole has an inner junction at the hollow portion of the striking body and an outer junction outside the striking body; the cover has a shape corresponding to the cover hole for sealing the cover hole; the connecting rod is installed to the assembly hole and has an inner fixing plate at an end; the inner fixing plate is greater than the assembly hole and disposed at the inner junction; and the outer fixing plate is fixed to the connecting rod and the outer junction of the striking body.

Abstract: A forming machine for a pulp product includes a frame unit defining a forming zone, two hot pressing zones, and two demolding zones; a forming unit disposed in the forming zone and including a forming mold for scooping pulp from a pulp tank and forming a blank unit thereon for every scoop of the pulp; a lower mold unit including four lower molds movable relative to the frame unit along a vertical direction, and an upper mold unit movable between two positions along a moving direction in a repetitive manner and including two upper hot-pressing central molds and two upper hot-pressing transfer molds. The upper mold unit is engageable with the forming mold and a corresponding one of the lower molds in different positions.

Abstract: An exposure device includes a laser source, a first spatial light modulator, a second spatial light modulator and a controller. The laser source is provided for emitting a laser. The first spatial light modulator is irradiated by the laser and used for modulating the phase of the laser irradiated on the first spatial light modulator before reflecting the laser. The second spatial light modulator is irradiated by the laser reflected from the first spatial light modulator and used for modulating the amplitude of the laser irradiated on the second spatial light modulator before reflecting the laser. The laser reflected by the second spatial light modulator is irradiated on a photoresist layer to form an exposure pattern.

Abstract: A pulp mold includes a mold main body extending along a longitudinal axis and having an inner surface that defines a chamber, an outer surface opposite to the inner surface, and a plurality of channel grooves extending inwardly from the outer surface toward the inner surface and extending along a length of the outer surface. The chamber is divided into a plurality of chamber sections decreasing in diameters gradually and upwardly from the opening along the longitudinal axis. Each channel groove does not communicate with the chamber. A plurality of air holes extend from the outer surface to the inner surface, pass through the channel grooves, and communicate the chamber with the outside.

Abstract: A pulp mold includes a mold main body extending along a longitudinal axis and having an inner surface that defines a chamber, an outer surface opposite to the inner surface, and a plurality of channel grooves extending inwardly from the outer surface toward the inner surface and extending along a length of the outer surface. The chamber is divided into a plurality of chamber sections decreasing in diameters gradually and upwardly from the opening along the longitudinal axis. Each channel groove does not communicate with the chamber. A plurality of air holes extend from the outer surface to the inner surface, pass through the channel grooves, and communicate the chamber with the outside.

Abstract: A method for cleaning semiconductor process equipment and a system thereof are provided. The method is adapted to apply to an object with at least one pollutant thereon and includes steps of providing multi-channel optical tweezers to irradiate the pollutant and locations where the pollutant is neighbor to, in order to let the optical tweezers generate a resultant force to the pollutant; and providing an airflow to the object. The resultant force is greater than a maximum static friction between the pollutant and the object so as to remove the pollutant.

Abstract: An exposure device includes a laser source, a first spatial light modulator, a second spatial light modulator and a controller. The laser source is provided for emitting a laser. The first spatial light modulator is irradiated by the laser and used for modulating the phase of the laser irradiated on the first spatial light modulator before reflecting the laser. The second spatial light modulator is irradiated by the laser reflected from the first spatial light modulator and used for modulating the amplitude of the laser irradiated on the second spatial light modulator before reflecting the laser. The laser reflected by the second spatial light modulator is irradiated on a photoresist layer to form an exposure pattern.

Abstract: The present disclosure provides a laser cutting method comprising steps of: (a) emitting a laser light to a spatial light modulator that has a plurality of pixels; (b) the laser light modulated by the spatial light modulator being irradiated on an uncut object, which is to be cut, for forming a focal point and cutting the uncut object; (c) measuring a cutting depth of the object; (d) the spatial light modulator converting a phase of each of the laser light modulated by each of the pixels to change a light pattern distribution at the focal point when the cutting depth of the object reaches a first predetermined depth; and (e) repeating the step (b) to the step (d) until the cutting depth of the object reaches a second predetermined depth; wherein the first predetermined depth is varied when the step (b) to the step (d) are repeated.

Abstract: A semiconductor device package includes a carrier, a first semiconductor device disposed on the carrier, a second semiconductor device disposed on the first semiconductor device, a conductive wire electrically connecting the first semiconductor device to the carrier, and an encapsulant encapsulating the first semiconductor device, the second semiconductor device and the conductive wire. The second semiconductor device defines a hole. The encapsulant exposes the hole. An apex of the conductive wire is lower than a surface of the second semiconductor device by a first distance (s). The apex of the conductive wire is spaced from the first surface of the encapsulant by a second distance (t). A first surface of the encapsulant is lower than a surface of the second semiconductor device by a third distance (D). The third distance is less than or equal to a difference between the first distance and the second distance.