Abstract: Improving endurance for non-volatile memory by dynamic erase depth is disclosed. A group of memory cells are erased. Then, at least some of the erased memory cells are programmed. Programming the memory cells typically impacts the erase threshold distribution of those memory cells that were intended to stay erased. The erase depth of the next erase can be adjusted based on how the program operation affects the erase threshold distribution. As one example, the upper tail of the erase distribution is measured after programming. The higher the upper tail, the shallower the next erase, in one embodiment. This helps to improve endurance. In one embodiment, the erase depth is adjusted by determining a suitable erase verify level. Rather than (or in addition to) adjusting the erase verify level, the number of erase pulses that are performed after erase verify passes can be adjusted to adjust the erase depth.

Abstract: A set of memory cells can be erased by individually erasing portions of the set in order to normalize the erase behavior of each memory cell and provide more consistent erase rates. An erase voltage pulse can be applied to the set of memory cells with a first group of cells biased for erase and a second group biased to inhibit erase. The erase depth is made shallower as the device is cycled more.

Abstract: Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming. Applying a selected word line dependent program condition may reduce or eliminate program disturb. The voltage applied to a common source line may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction, which may prevent or reduce program disturb. The voltage applied to bit lines of unselected NAND strings may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction.

Abstract: A television is manipulated by a control device. The control device transmits position information mapped with a position on the control device in response to an operation. The television includes a screen to display a number of icons associated with a plurality of functions. Positions on the screen are mapped with positions on the control device correspondingly. A control method is applied to the television to cause the television to detect whether the position information is received from the control device; generate a cursor and calculate a position on the screen based on the position information; and display the cursor on the calculated position on the screen to select the icon located on the calculated position.

Abstract: A control method is applied to a handheld electronic device. The handheld electronic device comprising a display module, and a back light to drive the display module, the display module displaying information and sensing touches on the display module; the control method includes steps of: generating a power saving instruction in response to a user's command; turning off the backlight in response to the power saving instruction; determining whether an operation occurs; determining whether the operation is a predetermined operation and generating a control instruction to manipulate a household electronic device when the operation is the predetermined operation.

Abstract: Techniques disclosed herein may prevent program disturb by preventing a select transistor of an unselected NAND string from unintentionally turning on. The Vgs of a select transistor of a NAND string may be lowered from one programming pulse to the next programming pulse multiple times. The select transistor may be a drain side select transistor or a source side select transistor. Progressively lowering the Vgs of the select transistor of an unselected NAND string as programming progresses may prevent the select transistor from unintentionally turning on. Therefore, program disturb is prevented or reduced. Vgs may be lowered by applying a lower voltage to a select line associated with the select transistor. Vgs may be lowered by applying a higher voltage to bit lines associated with the unselected NAND strings as programming progresses. Vgs may be lowered by applying a higher voltage to a common source line as programming progresses.

Abstract: A television is manipulated by a control device. The control device transmits position information mapped with a position on the control device in response to an operation. The television includes a screen to display a number of icons associated with a plurality of functions. Positions on the screen are mapped with positions on the control device correspondingly. A control method is applied to the television to cause the television to detect whether the position information is received from the control device; generate a cursor and calculate a position on the screen based on the position information; and display the cursor on the calculated position on the screen to select the icon located on the calculated position.

Abstract: A control system for controlling an external device based on images obtained by a control device comprises a detecting module, an obtaining module, and a determining module. The detecting module generates an obtaining signal when the control device establishes a communication with the external device. The obtaining module obtains an image of the current environment around the external device in response to the obtaining signal. The determining module determines whether at least one predefined object contained in the obtained image. When there is no predefined object contained in the obtained image, the determining module further determines whether the external device is in a first state and generates a first control signal when the external device is not in the first state. The external device switches to a first state for powering off the backlight of the external device in response to the first control signal.

Abstract: A method for manufacturing an aluminum nitride particle includes the steps of wet-milling an aluminum nitride material to form a solution containing aluminum nitride powders; blending a binding agent and a dispersing agent with the solution to gain a slurry; and granulating the slurry to obtain the aluminum nitride particle.

Abstract: An electronic device for controlling a display device includes a computing module, an adjusting module and a first communication module. The computing module computes a distance D between the electronic device and the display device capable of communicating with the electronic device. The adjusting module generates an adjusting signal according to the distance D. The first communicating module is configured to transmit the adjusting signal to the display device, for adjusting the size of an image displayed on the display device corresponding to the adjusting signal.

Abstract: Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming, which may reduce or eliminate program disturb. The voltage applied to the gate of a select transistor of a NAND string may depend on the location of the selected word line. This could be either a source side or drain side select transistor. This may prevent or reduce program disturb that could result due to DIBL. This may also prevent or reduce program disturb that could result due to GIDL. A negative bias may be applied to the gate of a source side select transistor when programming at least some of the word lines. In one embodiment, progressively lower voltages are used for the gate of the drain side select transistor when programming progressively higher word lines.

Abstract: Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming, which may reduce or eliminate program disturb. The voltage applied to the gate of a select transistor of a NAND string may depend on the location of the selected word line. This could be either a source side or drain side select transistor. This may prevent or reduce program disturb that could result due to DIBL. This may also prevent or reduce program disturb that could result due to GIDL. A negative bias may be applied to the gate of a source side select transistor when programming at least some of the word lines. In one embodiment, progressively lower voltages are used for the gate of the drain side select transistor when programming progressively higher word lines.

Abstract: Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming. Applying a selected word line dependent program condition may reduce or eliminate program disturb. The voltage applied to a common source line may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction, which may prevent or reduce program disturb. The voltage applied to bit lines of unselected NAND strings may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction.

Abstract: An image sensor device is disclosed. The image sensor device includes a semiconductor substrate having a first pixel region and a second pixel region. A first photo-conversion device is disposed within the first pixel region of the semiconductor substrate to receive a first light source. A second photo-conversion device is disposed within the second pixel region of the semiconductor substrate to receive a second light source different from the first light source. The surface of the semiconductor substrate corresponding to the first photo-conversion device and the second photo-conversion device has a first microstructure and a second microstructure, respectively, permitting a reflectivity of the first pixel region with respect to the first light source to be lower than a reflectivity of the second pixel region with respect to the first light source. The invention also discloses a fabrication method of the image sensor device.

Abstract: A 3D color image sensor and a 3D optical imaging system including the 3D color image sensor are provided. The 3D color image sensor includes a semiconductor substrate, having a plurality of first photodiodes and a plurality of second photodiodes, and a wiring layer formed under the first photodiodes and the second photodiodes. A light filter array layer is disposed on the first and the second photodiodes, having a plurality of color filter patterns and infrared (IR) light filter patterns, wherein each of the IR light filter patterns receives depth information of 3D color image of an object and corresponds to the first photodiode, and each of the color filter patterns receives color image information of 3D color image of the object and corresponds to the second photodiode.

Abstract: An image sensor device is disclosed. The image sensor device includes a semiconductor substrate having a first pixel region and a second pixel region. A first photo-conversion device is disposed within the first pixel region of the semiconductor substrate to receive a first light source. A second photo-conversion device is disposed within the second pixel region of the semiconductor substrate to receive a second light source different from the first light source. The surface of the semiconductor substrate corresponding to the first photo-conversion device and the second photo-conversion device has a first microstructure and a second microstructure, respectively, permitting a reflectivity of the first pixel region with respect to the first light source to be lower than a reflectivity of the second pixel region with respect to the first light source. The invention also discloses a fabrication method of the image sensor device.

Abstract: A method for enhancing surface smoothness of a ball valve stem comprises contacting and pressing a surface of the ball valve stem with a pressing roller so as to even tool marks on the surface of the ball valve stem, thereby enhancing surface smoothness of the ball valve stem.

Abstract: A glass pane connector comprises a pane holding assembly, a positioning assembly, a supporting assembly connecting the pane holding assembly and the positioning assembly, and at least one pivot assembly serving to changing an angle where the supporting assembly connects the pane holding assembly and the positioning assembly. The glass pane connector serves to position a glass pane at a predetermined installation site or to connect glass panes into a glass curtain wall.

Abstract: A method for photo-detecting and an apparatus for the same are provided. The apparatus for photo-detecting includes a first P-N diode and a second P-N diode. The first P-N diode, has a first P-N junction which has a first thickness, by which a first electrical signal is generated when irradiated by light, and the second P-N diode has a second P-N junction which has a second thickness, by which a second electrical signal is generated when irradiated by light. The second thickness is larger than the first thickness and an operation of the first electrical signal and the second electrical signal is proceeded for obtaining a third electrical signal.

Abstract: A flash memory cell includes a substrate and a gate structure formed on the substrate. The gate structure includes a tunneling layer over the substrate, a storage layer over the tunneling layer, a blocking layer over the storage layer, and a gate electrode over the dielectric. The storage layer preferably has a conduction band lower than a conduction band of silicon. The blocking layer is preferably formed of a high-k dielectric material.