Patents by Inventor Chun-Hung Lee
Chun-Hung Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210190853Abstract: A method for testing mass-produced PCBs and other electronic components more efficiently, the method includes setting testing parameters based on historical test data and a target decision index, obtaining a first specified number of the target objects to have the full test, and calculating a first yield based on the current test result. The method determine whether the first yield is less than the first yield threshold yield, and obtaining a second specified number of the target objects from the remaining target objects to have the full test, and calculate a second yield when the first yield is larger than or equal to the first yield threshold value. The method further determine whether the second yield is less than the second yield threshold value according to a second comparing command and select some of the remaining target objects to have a sampling test.Type: ApplicationFiled: April 8, 2020Publication date: June 24, 2021Inventors: MENG-CHU CHANG, YI-HUA CHIU, CHUN-HUNG LEE
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Publication number: 20210191375Abstract: A method for carrying out measurements on a virtual basis to decrease the frequency of taking and analyzing actual physical samples and interruptions caused thereby includes obtaining production information of at least one production device; and generating prediction data of measured products and unmeasured products using the production information and a prediction model, the prediction data comprising critical dimension data of the product. A virtual metrology device and a computer readable storage medium are also provided.Type: ApplicationFiled: April 16, 2020Publication date: June 24, 2021Inventors: HSUEH-FANG AI, CHUN-HUNG LEE, SHANG-YI LIN
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Publication number: 20210074579Abstract: A method for shallow trench isolation structures in a semiconductor device and a semiconductor device including the shallow trench isolation structures are disclosed. In an embodiment, the method may include forming a trench in a substrate; depositing a first dielectric liner in the trench; depositing a first shallow trench isolation (STI) material over the first dielectric liner, the first STI material being deposited as a conformal layer; etching the first STI material; depositing a second STI material over the first STI material, the second STI material being deposited as a flowable material; and planarizing the second STI material such that top surfaces of the second STI material are co-planar with top surfaces of the substrate.Type: ApplicationFiled: November 23, 2020Publication date: March 11, 2021Inventors: Shiang-Bau Wang, Chun-Hung Lee
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Publication number: 20210050430Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.Type: ApplicationFiled: November 4, 2020Publication date: February 18, 2021Inventors: DE-FANG CHEN, TENG-CHUN TSAI, CHENG-TUNG LIN, LI-TING WANG, CHUN-HUNG LEE, MING-CHING CHANG, HUAN-JUST LIN
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Patent number: 10897126Abstract: A storage device includes a base and a plurality of wire management modules. Each of the wire management modules includes a partition and a pivotal member. The partition is disposed to the base and has a supporting surface and a wire management groove. The supporting surface is located at the partition. The wire management groove is located at the supporting surface for accommodating wire. The pivotal member includes a fastening part and a pivotal part. The pivotal part is pivoted on the partition for a fastening position and a releasing position. When the pivotal member is at the fastening position, the fastening part covers the supporting surface for fastening wire between the surface and the fastening part. When the pivotal member is at the releasing position, the fastening part is spaced apart from the surface for releasing wire. The partitions and the base together form accommodation spaces.Type: GrantFiled: December 19, 2018Date of Patent: January 19, 2021Assignee: AVER INFORMATION INC.Inventors: Chun-Hung Lee, Yi-Cheng Chien
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Patent number: 10879129Abstract: A method includes forming a pattern-reservation layer over a semiconductor substrate. The semiconductor substrate has a major surface. A first self-aligned multi-patterning process is performed to pattern a pattern-reservation layer. The remaining portions of the pattern-reservation layer include pattern-reservation strips extending in a first direction that is parallel to the major surface of the semiconductor substrate. A second self-aligned multi-patterning process is performed to pattern the pattern-reservation layer in a second direction parallel to the major surface of the semiconductor substrate. The remaining portions of the pattern-reservation layer include patterned features. The patterned features are used as an etching mask to form semiconductor nanowires by etching the semiconductor substrate.Type: GrantFiled: November 13, 2019Date of Patent: December 29, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Feng Fu, De-Fang Chen, Yu-Chan Yen, Chia-Ying Lee, Chun-Hung Lee, Huan-Just Lin
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Patent number: 10854728Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.Type: GrantFiled: December 9, 2019Date of Patent: December 1, 2020Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: De-Fang Chen, Teng-Chun Tsai, Cheng-Tung Lin, Li-Ting Wang, Chun-Hung Lee, Ming-Ching Chang, Huan-Just Lin
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Patent number: 10847409Abstract: A method for shallow trench isolation structures in a semiconductor device and a semiconductor device including the shallow trench isolation structures are disclosed. In an embodiment, the method may include forming a trench in a substrate; depositing a first dielectric liner in the trench; depositing a first shallow trench isolation (STI) material over the first dielectric liner, the first STI material being deposited as a conformal layer; etching the first STI material; depositing a second STI material over the first STI material, the second STI material being deposited as a flowable material; and planarizing the second STI material such that top surfaces of the second STI material are co-planar with top surfaces of the substrate.Type: GrantFiled: November 1, 2018Date of Patent: November 24, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shiang-Bau Wang, Chun-Hung Lee
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Publication number: 20200312663Abstract: A method of forming an integrated circuit includes forming a patterned mask layer on a material layer, wherein the patterned mask layer has a plurality of first features, and a first distance between adjacent first features of the plurality of first features. The method further includes patterning the material layer to form the first features in the material layer. The method further includes increasing the first distance between adjacent first features of the plurality of first features to a second distance. The method further includes treating portions of the material layer exposed by the patterned mask layer. The method further includes removing the patterned mask layer; and removing non-treated portions of the material layer.Type: ApplicationFiled: May 22, 2020Publication date: October 1, 2020Inventors: Tzu-Yen Hsieh, Ming-Ching Chang, Chun-Hung Lee, Yi-Ann Lin, De-Fang Chen, Chao-Cheng Chen
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Patent number: 10748768Abstract: A method includes forming mandrel patterns over a substrate; depositing a spacer layer over the mandrel patterns and onto sidewalls of the mandrel patterns; trimming the spacer layer to reduce a thickness of the spacer layer along a pattern width direction; and etching the spacer layer to expose the mandrel patterns, resulting in a patterned spacer layer on the sidewalls of the mandrel patterns. The trimming of the spacer layer and the etching of the spacer layer are performed in separate processes. After the trimming of the spacer layer and the etching of the spacer layer, the method further includes removing the mandrel patterns.Type: GrantFiled: December 12, 2018Date of Patent: August 18, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu Chao Lin, Chao-Cheng Chen, Chun-Hung Lee, Yu-Lung Yang
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Patent number: 10665457Abstract: A method of forming an integrated circuit includes forming a patterned mask layer on a material layer, wherein the patterned mask layer has a plurality of first features, and a first distance between adjacent first features of the plurality of first features. The method further includes patterning the material layer to form the first features in the material layer. The method further includes increasing the first distance between adjacent first features of the plurality of first features to a second distance. The method further includes treating portions of the material layer exposed by the patterned mask layer. The method further includes removing the patterned mask layer; and removing non-treated portions of the material layer.Type: GrantFiled: March 29, 2018Date of Patent: May 26, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tzu-Yen Hsieh, Ming-Ching Chang, Chun-Hung Lee, Yih-Ann Lin, De-Fang Chen, Chao-Cheng Chen
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Publication number: 20200111887Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.Type: ApplicationFiled: December 9, 2019Publication date: April 9, 2020Inventors: DE-FANG CHEN, TENG-CHUN TSAI, CHENG-TUNG LIN, LI-TING WANG, CHUN-HUNG LEE, MING-CHING CHANG, HUAN-JUST LIN
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Publication number: 20200105583Abstract: A method for shallow trench isolation structures in a semiconductor device and a semiconductor device including the shallow trench isolation structures are disclosed. In an embodiment, the method may include forming a trench in a substrate; depositing a first dielectric liner in the trench; depositing a first shallow trench isolation (STI) material over the first dielectric liner, the first STI material being deposited as a conformal layer; etching the first STI material; depositing a second STI material over the first STI material, the second STI material being deposited as a flowable material; and planarizing the second STI material such that top surfaces of the second STI material are co-planar with top surfaces of the substrate.Type: ApplicationFiled: November 1, 2018Publication date: April 2, 2020Inventors: Shiang-Bau Wang, Chun-Hung Lee
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Publication number: 20200083110Abstract: A method includes forming a pattern-reservation layer over a semiconductor substrate. The semiconductor substrate has a major surface. A first self-aligned multi-patterning process is performed to pattern a pattern-reservation layer. The remaining portions of the pattern-reservation layer include pattern-reservation strips extending in a first direction that is parallel to the major surface of the semiconductor substrate. A second self-aligned multi-patterning process is performed to pattern the pattern-reservation layer in a second direction parallel to the major surface of the semiconductor substrate. The remaining portions of the pattern-reservation layer include patterned features. The patterned features are used as an etching mask to form semiconductor nanowires by etching the semiconductor substrate.Type: ApplicationFiled: November 13, 2019Publication date: March 12, 2020Inventors: Ching-Feng Fu, De-Fang Chen, Yu-Chan Yen, Chia-Ying Lee, Chun-Hung Lee, Huan-Just Lin
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Publication number: 20200075342Abstract: Generally, this disclosure provides examples relating to tuning etch rates of dielectric material. In an embodiment, a dielectric material is conformally deposited in first and second trenches in a substrate. Merged lateral growth fronts of the first dielectric material in the first trench form a seam in the first trench. The dielectric material is treated. The treating causes a species to be on first and second upper surfaces of the dielectric material in the first and second trenches, respectively, to be in the seam, and to diffuse into the respective dielectric material in the first and second trenches. After the treating, the respective dielectric material is etched. A ratio of an etch rate of the dielectric material in the second trench to an etch rate of the dielectric material in the first trench is altered by presence of the species in the dielectric material during the etching.Type: ApplicationFiled: August 31, 2018Publication date: March 5, 2020Inventors: Shih-Chiang Chen, Chun-Hung Lee, Ryan Chia-jen Chen, Hung-Wei Lin, Lung-Kai Mao
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Publication number: 20200058765Abstract: Devices are described herein that include an epitaxial layer, a cap layer above the epitaxial layer, a gate layer adjacent to the epitaxial layer on which an etching process is performed, a trench above the cap layer, and a source/drain portion includes the epitaxial layer.Type: ApplicationFiled: October 28, 2019Publication date: February 20, 2020Inventors: Ching-Feng Fu, Yu-Chan Yen, Chih-Hsin Ko, Chun-Hung Lee, Huan-Just Lin, Hui-Cheng Chang
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Publication number: 20200020593Abstract: An embodiment is a method including forming a first fin in a first region of a substrate and a second fin in a second region of the substrate, forming a first isolation region on the substrate, the first isolation region surrounding the first fin and the second fin, forming a first dummy gate over the first fin and a second dummy gate over the second fin, the first dummy gate and the second dummy gate having a same longitudinal axis, replacing the first dummy gate with a first replacement gate and the second dummy gate with a second replacement gate, forming a first recess between the first replacement gate and the second replacement gate, and a filling an insulating material in the first recess to form a second isolation region.Type: ApplicationFiled: September 26, 2019Publication date: January 16, 2020Inventors: Chih-Han Lin, Jr-Jung Lin, Chun-Hung Lee
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Patent number: 10504792Abstract: A method includes forming a pattern-reservation layer over a semiconductor substrate. The semiconductor substrate has a major surface. A first self-aligned multi-patterning process is performed to pattern a pattern-reservation layer. The remaining portions of the pattern-reservation layer include pattern-reservation strips extending in a first direction that is parallel to the major surface of the semiconductor substrate. A second self-aligned multi-patterning process is performed to pattern the pattern-reservation layer in a second direction parallel to the major surface of the semiconductor substrate. The remaining portions of the pattern-reservation layer include patterned features. The patterned features are used as an etching mask to form semiconductor nanowires by etching the semiconductor substrate.Type: GrantFiled: December 18, 2018Date of Patent: December 10, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Feng Fu, De-Fang Chen, Yu-Chan Yen, Chia-Ying Lee, Chun-Hung Lee, Huan-Just Lin
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Patent number: 10505014Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.Type: GrantFiled: March 29, 2017Date of Patent: December 10, 2019Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: De-Fang Chen, Teng-Chun Tsai, Cheng-Tung Lin, Li-Ting Wang, Chun-Hung Lee, Ming-Ching Chang, Huan-Just Lin
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Patent number: 10468308Abstract: An embodiment is a method including forming a first fin in a first region of a substrate and a second fin in a second region of the substrate, forming a first isolation region on the substrate, the first isolation region surrounding the first fin and the second fin, forming a first dummy gate over the first fin and a second dummy gate over the second fin, the first dummy gate and the second dummy gate having a same longitudinal axis, replacing the first dummy gate with a first replacement gate and the second dummy gate with a second replacement gate, forming a first recess between the first replacement gate and the second replacement gate, and a filling an insulating material in the first recess to form a second isolation region.Type: GrantFiled: February 19, 2018Date of Patent: November 5, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Han Lin, Jr-Jung Lin, Chun-Hung Lee