Abstract: The present application provides a semiconductor device and the method of making the same. The method includes recessing a fin extending from a substrate, forming a base epitaxial feature on the recessed fin, forming a bar-like epitaxial feature on the base epitaxial feature, and forming a conformal epitaxial feature on the bar-like epitaxial feature. The forming of the bar-like epitaxial feature includes in-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration. The forming of the conformal epitaxial feature includes in-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration.

Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.

Abstract: An energy dissipation device includes an inner tube, a core tube, an outer tube and a fixing member. The inner tube includes a first protruding structure. The core tube includes a second protruding structure, and the core tube is sleeved outside the inner tube. The outer tube is sleeved outside the core tube. The fixing member is connected to the inner tube, the core tube and the outer tube.

Abstract: An acrylate based photopolymer with high yellowing resistance, excellent photo sensitivity, high toughness, and high glass transition temperature, methods of preparation and used thereof, and solders comprising the same.

Abstract: A light-emitting element including an epitaxial structure and a light guide structure is provided. The epitaxial structure has a first surface and a second surface opposite to each other and includes an active layer. The light guide structure is disposed on the first surface of the epitaxial structure and includes a first light reflection layer and a filter layer covering on an upper surface of the first light reflection layer. The first light reflection layer completely covers the first surface. A display panel is also provided.

Abstract: Systems and methods are provided for hopping a digitally controlled oscillator (DCO) among a plurality of channels, wherein a gain of the DCO KDCO is a nonlinear function of frequency. A first normalized tuning word (NTW) corresponding to a first channel of the plurality of channels is generated. A first normalizing gain multiplier X is generated based on the nonlinear function of frequency, on an estimate of the nonlinear function of frequency, at a first frequency corresponding to the first channel. The first NTW is multiplied by the first X to obtain a first oscillator tuning word (OTW). The first OTW is input to the DCO to cause the DCO to hop to the first channel. A system for hopping among a plurality of channels at a plurality of respective frequencies comprises a phase-locked loop (PLL), a digitally controlled oscillator (DCO), a multiplexer, and an arithmetic module.

Abstract: An integrated circuit (IC) comprising an enhanced passivation scheme for pad openings and trenches is provided. In some embodiments, an interlayer dielectric (ILD) layer covers a substrate and at least partially defines a trench. The trench extends through the ILD layer from a top of the ILD layer to the substrate. A conductive pad overlies the ILD layer. A first passivation layer overlies the ILD layer and the conductive pad, and further defines a pad opening overlying the conductive pad. A second passivation layer overlies the ILD layer, the conductive pad, and the first passivation layer, and further lines sidewalls of the first passivation layer in the pad opening and sidewalls of the ILD layer in the trench. Further, the second passivation layer has a low permeability for moisture or vapor relative to the ILD layer.

Abstract: A shift register circuit includes a driving signal generating circuit, a coupling circuit, and a sweep signal generating circuit. The driving signal generating circuit is configured to receive a plurality of first clock signals, a low voltage source, an initial signal, and a first high voltage source so as to output a driving signal. The coupling circuit is coupled to the driving signal generating circuit. The coupling circuit is configured to transmit the low voltage source. The sweep signal generating circuit is coupled to the coupling circuit. The sweep signal generating circuit is configured to receive a second clock signal, the low voltage source, and a second high voltage source so as to output a sweep signal. A waveform of the sweep signal includes an oblique waveform. The first high voltage source and the second high voltage source are electrically independent of each other.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a fin structure over a substrate. The method also includes forming a gate structure over the fin structure. The method further includes forming fin spacers over sidewalls of the fin structure and gate spacers over sidewalls of the gate structure. In addition, the method includes forming a source/drain structure over the fin structure and depositing a dummy material layer to cover the source/drain structure. The dummy material layer is removed faster than the gate spacers during the removal of the dummy material layer. The method further includes forming a salicide layer over the source/drain structure and the fin spacers, and forming a contact over the salicide layer. The dummy material layer includes Ge, amorphous silicon or spin-on carbon.

Abstract: An energy dissipation device includes an inner tube, a core tube, an outer tube and a fixing member. The inner tube includes a first protruding structure. The core tube includes a second protruding structure, and the core tube is sleeved outside the inner tube. The outer tube is sleeved outside the core tube. The fixing member is connected to the inner tube, the core tube and the outer tube.

Abstract: A method includes forming a semiconductor fin protruding higher than top surfaces of isolation regions. The isolation regions extend into a semiconductor substrate. A portion of the semiconductor fin is etched to form a trench, which extends lower than bottom surfaces of the isolation regions, and extends into the semiconductor substrate. The method further includes filling the trench with a first dielectric material to form a first fin isolation region, recessing the first fin isolation region to form a first recess, and filling the first recess with a second dielectric material. The first dielectric material and the second dielectric material in combination form a second fin isolation region.

Abstract: A coil module includes a coil assembly, a first induction substrate, a second induction substrate and an adhesive element. The coil assembly has a winding axis. The coil assembly is disposed on the first induction substrate. The first induction substrate is disposed on the second induction substrate. The adhesive element covers the first induction substrate and the second induction substrate, and the adhesive element has a first adhesive portion and a second adhesive portion. When viewed in a direction perpendicular to the winding axis, the first adhesive portion and the second adhesive portion are located on different planes.

Abstract: Aspects of the present disclosure provide methods, apparatuses, and systems for non-linearly decreasing an auditory experience output. According to an aspect, a non-linear decreasing rate is applied to an audio output of the auditory experience. The non-linear decreasing rate varies as a function of decibel amplitude over time in seconds. The non-linear decreasing rate comprises a plurality of segments connected together. The audio of the guided breathing is output at the non-linear decreasing rate until a decibel level of the audio output is below one of a decibel level of ambient noises in a user's environment or a predetermined decibel level.

Abstract: The present invention discloses a medical prediction method and system based on a semantic graph network, which recognizes an entity in an electronic medical record based on domain knowledge, and uses a two-way gated loop unit to learn a sequence features of a text. Secondly, in order to extract a semantic relation in the electronic medical record in a fine-granularity manner, the present invention defines two types of subgraphs, graph representation based on defined knowledge and graph representation based on undefined knowledge, and uses a Graph Convolution Network (GCN) and a Graph Attention Network (GAT) to extract a semantic relation representation, where the graph representation based on undefined knowledge allows the learning of a relation between an entity or an word and the graph representation based on undefined knowledge, and it also allows to learn a relation between word or entity and itself, in order to translate entity or word representation into a uniform graph embedding representation.

Abstract: The present disclosure relates to use of a lectin receptor-like kinase LecRK-IX.1 as a protein for regulating insect resistance of Arabidopsis thaliana. A. thaliana with high resistance to Bemisia tabaci can be cultivated by reducing the expression of, or knocking out, an encoding gene of the protein. Therefore, Arabidopsis thaliana with the high-level resistance to Bemisia tabaci can be cultivated. The gene and its encoded protein can be applied to plant genetic improvement.

Abstract: A Bluetooth controller circuit includes: a clock counter arranged to operably generate a first count value corresponding to a reference clock signal; a count value adjusting circuit arranged to operably generate a second count value according to the first count value; a time slot determining circuit arranged to operably determine timing of respective transmission slots according to the second count value; a transceiver circuit arranged to operably transmit Bluetooth signal in transmission slots determined by the time slot determining circuit; and a control circuit, coupled with the count value adjusting circuit, the time slot determining circuit, and the transceiver circuit, and arranged to operably control operations of the count value adjusting circuit, the time slot determining circuit, and the transceiver circuit.

Abstract: A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium.

Abstract: A system and method for improving speech conversion efficiency of Articulatory disorder, The method comprises the following steps: First generate a set of text to be recording (not considered in user difference and model difference). It will cover specific phonemes of language and tone distribution relationship. Then the user can train the voice conversion model (or other voice processing model) based on the voice recorded by the user. At the same time, the generated text will also be changed by the characteristics of the currently adopted model (For example: by changing the time-frequency resolution relationship of sentences in the text). Then generate more representative texts so that users can read more helpful training corpus to improve the processing efficiency of the system.

Abstract: A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.

Abstract: Provided is a method for locating a tumor. The method includes: performing image registration on a projection image of the tumor and a first standard image to acquire a first offset; generating a second standard image based on the first offset; performing image registration on the projection image and the second standard image to acquire a second offset; and updating the second standard image based on the second offset and executing the operation of image registration on the projection image and the second standard image again in response to the second offset satisfying a virtual re-sampling condition; or outputting an accumulated offset in response to the second offset not satisfying the virtual re-sampling condition, wherein the accumulated offset is a sum of the first offset and the second offset acquired by executing the operation of image registration.