Abstract: Resistors and method of forming the same are provided. A device structure according to the present disclosure includes a substrate, a first intermetal dielectric (IMD) layer over the substrate, a resistor that includes a first resistor layer over the first IMD layer, a second resistor layer over the first resistor layer, and a third resistor layer over the second resistor layer, a second IMD layer over the first IMD layer and the resistor, a first contact via extending through the second IMD layer and the third resistor layer and terminating in the first resistor layer, and a second contact via extending through the second IMD layer and the third resistor layer and terminating in the first resistor layer.

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

Abstract: A two-phase cold plate includes a base, an upper cover, a heat exchange cavity and a cooling fin module. The upper cover is installed on the base, the heat exchange cavity is formed between the base and the upper cover, and the cooling fin module is installed in the heat exchange cavity. The upper cover includes at least one nozzle module and a plurality of two-phase fluid channels. The two-phase fluid channels are respectively located on both sides of the nozzle module, and the nozzle module sprays a heat dissipating fluid to the cooling fin module, and the heat dissipating fluid flows along the cooling fin module to the two-phase fluid channels on both sides of the cooling fin module to cool the cooling fin module.

Abstract: A method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. Remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. A transistor is then formed based on the protruding fin.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The magnetic element has multiple sub-layers, and each sub-layer is wider than another sub-layer above it. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element, and the isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.

Abstract: Some implementations described herein include a semiconductor device including a semiconductor resistor structure having and techniques for forming the semiconductor resistor structure. The techniques include forming a layer of a silicon chromium material having different silicon/chromium ratios within the layer (e.g., a graded resistive layer) as part of forming the semiconductor resistor structure. The graded resistive layer may compensate for semiconductor manufacturing processes (e.g., etching, oxidation, thermal annealing) that may lead to film damage, thinning, crystallization, or composition drift of the graded resistive layer to enlarge process windows for fabricating the semiconductor resistor structure. The enlarged process window may improve a performance of the semiconductor resistor structure (e.g., a resistance and/or an impedance uniformity) relative to another semiconductor resistor structure fabricated using a uniform layer of a silicon chromium material.

Abstract: A process is provided to fabricate a finFET device having a semiconductor layer of a two-dimensional “2D” semiconductor material. The semiconductor layer of the 2D semiconductor material is a thin film layer formed over a dielectric fin-shaped structure. The 2D semiconductor layer extends over at least three surfaces of the dielectric fin structure, e.g., the upper surface and two sidewall surfaces. A vertical protrusion metal structure, referred to as “metal fin structure”, is formed about an edge of the dielectric fin structure and is used as a seed to grow the 2D semiconductor material.

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

Abstract: A method, system, and computer program product are configured to: create a link tracing data structure in response to receiving a request from a user interface (UI), wherein the link tracing data structure includes a synchronization identifier and information about user actions in the UI; handle the request by calling plural microservices; add respective synchronization content for each one of the plural microservices to the link tracing data structure, wherein the respective synchronization content for a respective one of the plural microservices comprises: the synchronization identifier; a respective step identifier that identifies the respective one of the plural microservices; and a respective synchronization message that describes an execution status of the respective one of the plural microservices; store the link tracing data structure; and provide the link tracing data structure to a requesting user.

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for training an image embedding model. In one aspect, a method comprises: obtaining training data comprising a plurality of training examples, wherein each training example comprises: an image pair comprising a first image and a second image; and selection data indicating one or more of: (i) a co-click rate of the image pair, and (ii) a similar-image click rate of the image pair; and using the training data to train an image embedding model having a plurality of image embedding model parameters.

Abstract: A coolant distribution unit includes a casing, a control module, a power supply module, a heat exchange module, an integrated pipe, and a fluid driving module. The power supply module is electrically connected to the control module, the integrated pipe includes a plurality of inlets and an outlet to collect and output a cooled working fluid, the fluid driving module is electrically connected to the control module and the power supply module, and the fluid driving module is in fluid communication with the heat exchange module. The control module, power supply module, heat exchange module, integrated pipe, and fluid driving module are all arranged in the casing.

Abstract: Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes a redistribution layer including a first conductive feature and a second conductive feature, a first contact feature disposed over and electrically coupled to the first conductive feature, a second contact feature disposed over and electrically coupled to the second conductive feature, and a passivation feature extending from between the first conductive feature and the second conductive feature between the first contact feature and the second contact feature. The passivation feature includes a dielectric feature and a dielectric layer. The dielectric layer is disposed on a planar top surface of the dielectric feature and a composition of the dielectric feature is different from a composition of the dielectric layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.

Abstract: A method includes forming a first metallic feature, forming a dielectric layer over the first metallic feature, etching the dielectric layer to form an opening, with a top surface of the first metallic feature being exposed through the opening, and performing a first treatment on the top surface of the first metallic feature. The first treatment is performed through the opening, and the first treatment is performed using a first process gas. After the first treatment, a second treatment is performed through the opening, and the second treatment is performed using a second process gas different from the first process gas.

Abstract: A supporting device is adapted to be mounted on a rack and includes a longitudinal portion, a first mounting portion, and an elastic member. The first mounting portion and the elastic member are both provided on the longitudinal portion. The elastic member is configured to be in one of a locking state and a non-locking state. The elastic member is provided with a second mounting portion. When the first mounting portion is mounted on the rack and the elastic member is in the non-locking state, the second mounting portion is not mounted on the rack. When the first mounting portion is mounted on the rack and the elastic member is in the locking state, the second mounting portion is mounted on the rack.

Abstract: A memory is provided with a pseudo-differential sense amplifier for single-endedly sensing a first read bit line from a first bank of bitcells. The sense amplifier compares a voltage of the first read bit line to a voltage of a pre-charged second read bit line from a second bank of bitcells to make a bit decision for a read operation through the first read bit line to the first bank of bitcells.

Abstract: A process is provided to fabricate a finFET device having a semiconductor layer of a two-dimensional “2D” semiconductor material. The semiconductor layer of the 2D semiconductor material is a thin film layer formed over a dielectric fin-shaped structure. The 2D semiconductor layer extends over at least three surfaces of the dielectric fin structure, e.g., the upper surface and two sidewall surfaces. A vertical protrusion metal structure, referred to as “metal fin structure”, is formed about an edge of the dielectric fin structure and is used as a seed to grow the 2D semiconductor material.

Abstract: A slide rail assembly includes a first rail, a second rail, a third rail, a fourth rail and a fifth rail. The second rail and the third rail are respectively movable relative to the first rail. Each of the second rail and the third rail is formed with a passage. The fourth rail and the fifth rail are configured to be accommodated in the passages of the second rail and the third rail respectively.

Abstract: A slide rail assembly comprises a first rail, a second rail and a handle. When the handle is moved from a first operating position to a second operating position, the handle is configured to unlock the second rail relative to the first rail at a predetermined position.

Abstract: The electronic device of the present disclosure includes a redistribution structure, chip units, and a protective layer. The redistribution structure includes alignment marks. The chip units are electrically connected to the redistribution structure, and include a first chip unit and a second chip unit. The protective layer surrounds the first chip unit and the second chip unit. The chip units and the alignment marks are arranged along a direction. The first chip unit is disposed between the first alignment mark and the third alignment mark, and the second chip unit is disposed between the second alignment mark and the fourth alignment mark. The second alignment mark and the third alignment mark are disposed between the first chip unit and the second chip unit. The number of the alignment marks is greater than the number of the chip units.