Abstract: A two-phase immersion-type heat dissipation structure having fins for facilitating bubble generation is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate, and a plurality of fins. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other, the non-fin surface is configured to be in contact with a heat source immersed in a two-phase coolant, and the fin surface is connected with the plurality of fins. More than half of the fins are functional fins, and at least one side surface of each of the functional fins and the fin surface have an included angle therebetween that is from 80 degrees to 100 degrees. A center line average roughness (Ra) of the side surface is less than 3 ?m, and a ten-point average roughness (Rz) of the side surface is not less than 12 ?m.

Abstract: A two-phase immersion-cooling heat-dissipation composite structure is provided. The heat-dissipation composite structure includes a heat dissipation base, a plurality of high-thermal-conductivity fins, and at least one high-porosity solid structure. The heat dissipation base has a first surface and a second surface that face away from each other. The second surface of the heat dissipation base is in contact with a heating element immersed in a two-phase coolant. The first surface of the heat dissipation base is connected to the high-thermal-conductivity fins. The at least one high-porosity solid structure is located at the first surface of the heat dissipation base, and is connected and alternately arranged between side walls of two adjacent ones of the high-thermal-conductivity fins. Each of the high-porosity solid structure includes a plurality of closed holes and a plurality of open holes.

Abstract: A two-phase immersion-type heat dissipation structure having acute-angle notched structures is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate, and a plurality of fins. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other, the non-fin surface is configured to be in contact with a heat source immersed in a two-phase coolant, and the fin surface is connected with the fins. More than half of the fins are functional fins, and at least one side surface of each of the functional fins has first and second surfaces defined thereon and connected to each other. An angle between the first surface and the fin surface is from 80 degrees to 100 degrees, and an angle between the second surface and the fin surface is less than 75 degrees.

Abstract: A two-phase immersion-type heat dissipation structure is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate and a plurality of non-vertical fins. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other. The non-fin surface is configured to be in contact with a heating element immersed in a two-phase coolant. The fin surface is connected with the non-vertical fins, a cross-sectional contour of one of the non-vertical fins has a top end point and a bottom end point connected with the fin surface, and the top and bottom end points are opposite to each other. A length of a cross-sectional contour line defined from the top end point to the bottom end point is greater than a perpendicular line length of a perpendicular line defined from the top end point to the fin surface.

Abstract: A two-phase immersion-type heat dissipation structure having skived fin with high porosity is provided. The two-phase immersion-type heat dissipation structure having skived fin with high porosity includes a porous heat dissipation structure having a total porosity that is equal to or greater than 5%. The porous heat dissipation structure includes a porous substrate and a plurality of porous and skived fins. The porous substrate has a first surface and a second surface that face away from each other. The second surface of the porous substrate is configured to be in contact with a heating element that is immersed in a two-phase coolant. The plurality of porous and skived fins are integrally formed on the first surface of the porous substrate by skiving. A first porosity of the plurality of porous and skived fins is greater than a second porosity of the porous substrate.

Abstract: A two-phase immersion-type heat dissipation structure having a porous structure is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate, a plurality of fins, and a reinforcement frame. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other, the non-fin surface is configured to be in contact with a heat source immersed in a two-phase coolant, and the fins are integrally formed on the fin surface. A porous structure is covered onto at least one portion of the fin surface and at least one portion of the plurality of fins, and has a porosity of from 10% to 50% and a thickness that is from 0.1 mm to 1 mm. The reinforcement frame is bonded to the heat dissipation substrate and surrounds another one portion of the plurality of fins.

Abstract: A heat dissipation structure having a heat pipe is provided. The heat dissipation structure includes a heat dissipation base, a plurality of fins, at least one heat pipe, and at least a first heat dissipation contact material and a second heat dissipation contact material that are different from one another. The heat dissipation base has a first and a second heat dissipation surface opposite to each other. The second heat dissipation surface is connected to the fins. At least one recessed trough is concavely formed on the first heat dissipation surface. The at least one heat pipe is located in the at least one recessed trough. The first and the second heat dissipation contact material are filled in the at least one recessed trough. A melting point of the second heat dissipation contact material is smaller than a melting point of the first heat dissipation contact material.

Abstract: In an embodiment, a device includes: a gate electrode; a epitaxial source/drain region adjacent the gate electrode; one or more inter-layer dielectric (ILD) layers over the epitaxial source/drain region; a first source/drain contact extending through the ILD layers, the first source/drain contact connected to the epitaxial source/drain region; a contact spacer surrounding the first source/drain contact; and a void disposed between the contact spacer and the ILD layers.

Abstract: A method for forming a multi-gate semiconductor structure is provided. A substrate including a fin structure is received. First portions of the fin structure are removed to expose a source/drain region of the fin structure. A semiconductor layer is formed in the source/drain region. Second portions of the fin structure are removed to expose a channel region of the fin structure. A surface of the channel region of the fin structure is cleaned. An interfacial layer is formed over the cleaned surface of the channel region of the fin structure.

Abstract: The present disclosure describes structure and method of a fin field-effect transistor (finFET) device. The finFET device includes: a substrate, a fin over the substrate, and a gate structure over the fin. The gate structure includes a work-function metal (WFM) layer over an inner sidewall of the gate structure. A topmost surface of the WFM layer is lower than a top surface of the gate structure. The gate structure also includes a filler gate metal layer over the topmost surface of the WFM layer. A top surface of the filler gate metal layer is substantially co-planar with the top surface of the gate structure. The gate structure further includes a self-assembled monolayer (SAM) between the filler gate metal layer and the WFM layer.

Abstract: Provided is a device with a replacement spacer structure and a method for forming such a structure. The method includes forming an initial spacer structure, wherein the initial spacer structure has an initial etch rate for a selected etchant. The method further includes removing a portion of the initial spacer structure, wherein a remaining portion of the initial spacer structure is not removed. Also, the method includes forming a replacement spacer structure adjacent to the remaining portion of the initial spacer structure to form a combined spacer structure, wherein the combined spacer structure has an intermediate etch rate for the selected etchant that is less than the initial etch rate for a selected etchant. Further, the method includes etching the combined spacer structure with the selected etchant to form a final spacer structure.

Abstract: The present disclosure describes structure and method of a fin field-effect transistor (finFET) device. The finFET device includes: a substrate, a fin over the substrate, and a gate structure over the fin. The gate structure includes a work-function metal (WFM) layer over an inner sidewall of the gate structure. A topmost surface of the WFM layer is lower than a top surface of the gate structure. The gate structure also includes a filler gate metal layer over the topmost surface of the WFM layer. A top surface of the filler gate metal layer is substantially co-planar with the top surface of the gate structure. The gate structure further includes a self-assembled monolayer (SAM) between the filler gate metal layer and the WFM layer.

Abstract: A device and a method for detecting states of a linear guideway including a sliding block and a slide rail are provided. The device includes a sensor located at a position corresponding to a side surface of the slide rail, and an analysis processer communicated with the sensor. The sensor detects the vibrating of the slide rail to generate a sensing signal. The analysis processer compares the sensing signal with at least one threshold, to determines occurrence of abnormalities. Therefore, the sensitivity for detection may be increased.

Abstract: In a method and device for extracting joint line of shoe, a contact end of a contouring tool is provided to contact a joint contour of a shoe sample, an encoder is provided to generate a plurality of first trajectory coordinate signals of the contact end while the contact end is moved along the joint contour, and a signal processor is provided to receive the first trajectory coordinate signals to create a digital joint line.

Abstract: A device and a method for detecting states of a linear guideway including a sliding block and a slide rail are provided. The device includes a sensor located at a position corresponding to a side surface of the slide rail, and an analysis processer communicated with the sensor. The sensor detects the vibrating of the slide rail to generate a sensing signal. The analysis processer compares the sensing signal with at least one threshold, to determines occurrence of abnormalities. Therefore, the sensitivity for detection may be increased.

Abstract: An automatic positioning method and an automatic control device are provided. The automatic control device includes a processing unit, a memory unit, and a camera unit to automatically control a robotic arm. When the processing unit executes a positioning procedure, the camera unit obtains a first image of the robotic arm. The processing unit analyzes the first image to establish a three-dimensional working environment model and obtains first spatial positioning data. The processing unit controls the robotic arm to move a plurality of times to sequentially obtain a plurality of second images of the robotic arm by the camera unit and analyzes the second images and encoder information of the robotic arm to obtain second spatial positioning data. The processing unit determines whether an error parameter between the first spatial positioning data and the second spatial positioning data is less than a specification value to end the positioning procedure.

Abstract: The present disclosure describes structure and method of a fin field-effect transistor (finFET) device. The finFET device includes: a substrate, a fin over the substrate, and a gate structure over the fin. The gate structure includes a work-function metal (WFM) layer over an inner sidewall of the gate structure. A topmost surface of the WFM layer is lower than a top surface of the gate structure. The gate structure also includes a filler gate metal layer over the topmost surface of the WFM layer. A top surface of the filler gate metal layer is substantially coplanar with the top surface of the gate structure. The gate structure further includes a self-assembled monolayer (SAM) between the filler gate metal layer and the WFM layer.

Abstract: The present disclosure describes structure and method of a fin field-effect transistor (finFET) device. The finFET device includes: a substrate, a fin over the substrate, and a gate structure over the fin. The gate structure includes a work-function metal (WFM) layer over an inner sidewall of the gate structure. A topmost surface of the WFM layer is lower than a top surface of the gate structure. The gate structure also includes a filler gate metal layer over the topmost surface of the WFM layer. A top surface of the filler gate metal layer is substantially co-planar with the top surface of the gate structure. The gate structure further includes a self-assembled monolayer (SAM) between the filler gate metal layer and the WFM layer.

Abstract: An automatic control method and an automatic control device are provided. The automatic control device includes a processing unit, a memory unit and a camera unit. The memory unit records an object database and a behavior database. When the automatic control device is operated in an automatic learning mode, the camera unit obtains a continuous image, and the processing unit analyzes the continuous image to determine whether there is an object being moved and matching an object model recorded in the object database in a first placement area. When the continuous image displays the object is moved, the processing unit obtain control data corresponding to moving the object from the first placement area to a second placement area, and the processing unit records the control data to the behavior database. The control data includes trajectory data and motion posture data of the object.

Abstract: An automatic positioning method and an automatic control device are provided. The automatic control device includes a processing unit, a memory unit, and a camera unit to automatically control a robotic arm. When the processing unit executes a positioning procedure, the camera unit obtains a first image of the robotic arm. The processing unit analyzes the first image to establish a three-dimensional working environment model and obtains first spatial positioning data. The processing unit controls the robotic arm to move a plurality of times to sequentially obtain a plurality of second images of the robotic arm by the camera unit and analyzes the second images and encoder information of the robotic arm to obtain second spatial positioning data. The processing unit determines whether an error parameter between the first spatial positioning data and the second spatial positioning data is less than a specification value to end the positioning procedure.