Abstract: A film manufacturing equipment includes a transporting device, a filtering device, a coating device, a baking device and a blowing device. Transporting device is configured to transport a substrate. The filtering device is configured to filter a solution. The coating device is configured to squeeze and coat the filtered solution on the substrate. The baking device is configured to bake the solution coated on the substrate. The blowing device is configured to blow an air to the baked solution.

Abstract: A method for forming a semiconductor structure is provided. The method for forming the semiconductor structure includes forming a fin structure over a substrate in a first direction, forming a first gate stack, a second gate stack and a third gate stack across the fin structure, removing the first gate stack to form a trench, depositing a cutting structure in the trench, and forming a first contact plug between the cutting structure and the second gate stack and a second contact plug between the second gate stack and the third gate stack. The fin structure is cut into two segments by the trench. A first dimension of the first contact plug in the first direction is greater than a second dimension of the second contact plug in the first direction.

Abstract: A fiber composite material is provided. The fiber composite material includes 40 phr to 65 phr of a polypropylene resin, 30 phr to 60 phr of a long glass fiber, 0.5 phr to 5 phr of a black masterbatch, and 0.5 phr to 10 phr of a compatibilizer. The black masterbatch contains carbon black having a basic active group on a surface of the carbon black. The compatibilizer is grafted with maleic anhydride.

Abstract: An image sensor includes a photoelectric conversion layer, a plurality of deep trench isolations, a first color filter, a first deflector, and a covering layer. The photoelectric conversion layer includes a first photodiode and a second photodiode. The deep trench isolations separate the first photodiode and the second photodiode, in which a pixel dimension is determined by a distance between two adjacent deep trench isolations. The first color filter is disposed on the first photodiode and the second photodiode. The first deflector is disposed on the first color filter. The covering layer covers and surrounds the first deflector. A refractive index of the covering layer is greater than a refractive index of the first deflector, and a difference value between the refractive index of the covering layer and the refractive index of the first deflector is in a range from 0.15 to 0.6.

Abstract: A method includes following steps. A first precursor is pulsed over a substrate such that first precursor adsorbs on a first region and a second region of the substrate. A first plurality of the first precursor adsorbing on the first region is then removed using a plasma, while leaving a second plurality of the first precursor adsorbing on the second region. A second precursor is then pulsed to the substrate to form a monolayer of a film on the second region and a material on the first region. The material is then removed using a plasma. The substrate is biased during removing the material.

Abstract: A vacuum processing apparatus (110) for deposition of a material on a substrate is provided. The vacuum processing apparatus (110) includes a vacuum chamber comprising a processing area (111); a deposition apparatus (112) within the processing area (111) of the vacuum chamber; a cooling surface (113) inside the vacuum chamber; and one or more movable shields (220) between the cooling surface (113) and the processing area (111).

Abstract: Proposed are a method and an apparatus for receiving an A-PPDU in a wireless LAN system. Specifically, a reception STA receives an A-PPDU from a transmission STA and decodes the A-PPDU. The A-PPDU includes a first PPDU for a primary 80 MHz channel, and a second PPDU for a secondary 80 MHz channel. The first PPDU includes a first L-SIG, a first RL-SIG, an HE-SIG-A, an HE-SIG-B, and first data. The second PPDU includes a first L-SIG, a first RL-SIG, an HE-SIG-A, an HE-SIG-B, a second L-SIG, a second RL-SIG, a U-SIG, an EHT-SIG, and second data. The HE-SIG-A includes an indicator of the A-PPDU.

Abstract: A shoes care device includes a first management device, a second management device, a steam generator, and a controller. Each of the first management device and the second management device may be configured to include an inner cabinet, a connection path, a blowing part, and a dehumidifying part. A supply degree of steam, a dehumidification degree by a dehumidifying part, and a flow degree of air circulated in a connection path can be different between the first management device and the second management device, and as a result, the shoes can be managed under different conditions in the first management device and the second management device.

Abstract: A base station may communicate with one or more other base stations. A first base station may hand over one or more wireless devices served by its cell to a second base station (e.g., a neighboring base station), for example, to save overall energy consumption in the network. Feedback information (e.g., one or more messages) associated with performance of the second base station after the handover may be provided by the second base station to the first base station help further decision-making related to handing over other wireless device(s).

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first source/drain (S/D) region disposed over a substrate, a second S/D region disposed over the substrate, a dielectric wall disposed between the first and second S/D regions, a first conductive contact disposed over and electrically connected to the first S/D region, a second conductive contact disposed over and electrically connected to the second S/D region, and a first dielectric material in contact with the dielectric wall. The first dielectric material has a top surface located at a first level between a top surface of the first conductive contact and a bottom surface of the first conductive contact, and the first dielectric material extends from the first level to a second level located below the bottom surface of the first conductive contact.

Abstract: A semiconductor device is provided. The semiconductor includes a plurality of semiconductor components and at least two dielectric walls disposed among the semiconductor components. Two of the dielectric walls, which are adjacent, extended along one direction or disposed at two sides of a device isolation, have varied wall widths or offset.

Abstract: Anti-IL-12/IL-23p40 antibodies, such as ustekinumab, are used in methods and compositions for safe and effective treatment of psoriasis, particularly moderate to severe chronic plaque psoriasis, in pediatric patients. The methods and compositions address a clear unmet medical need in this patient population.

Abstract: This invention provides a carrier or submount for high power devices packaging and a method for forming the carrier or submount. The carrier comprises a thermal conductive ceramic substrate, a patterned adhesion layer on the substrate, a heat dissipation layer on the patterned adhesion layer, a conformal cover layer enclosing the heat dissipation layer and the adhesion layer, a diffusion barrier layer on the conformal cover layer, an eutectic bonding layer on the diffusion barrier layer, and a dissipation ceramic substrate with an L-shape bonding conductor, wherein one end of the L-shape bonding conductor bonds to the power device and the other end bonds to the conformal cover layer at the second region. The substrate includes a first region for bonding high power device, a second region for wire-bonding, and a third region for heat sink. The first region and second region are on a first surface of the substrate, and the third region is one the second surface, opposite to the first surface, of the substrate.

Abstract: A CMOS image sensor includes PDAF pixels distributed in an array of image pixels in plan view. Each PDAF pixel includes m×m binned photodiodes, a PDAF color filter overlying the binned photodiodes and laterally surrounded by a first isolation structure, and a PDAF micro-lens overlying the PDAF color filter. A first horizontal distance between a center of the PDAF color filter and a center of the binned photodiodes varies depending on a location of the PDAF pixel in plan view in the CMOS image sensor. Additionally, the first isolation structure includes a first low-n dielectric grid, a second low-n dielectric grid underlying the first low-n dielectric grid, and a metal grid enclosed by the second low-n dielectric grid. The second low-n dielectric grid includes a filler dielectric material different from a second low-n dielectric grid material. Thus, quantum efficiency and uniformity of the CMOS image sensor are improved.

Abstract: A display apparatus includes a display panel, a driving controller, and a data driver. The driving controller generates a data signal based on input image data. The data driver converts the data signal into a data voltage and outputs the data voltage to the display panel. The driving controller includes a deterioration compensator. The deterioration compensator generates an alpha value based on a ratio between a sensed current read from a portion of the display panel applied with a high power voltage or a portion of the display panel applied with a low power voltage and a predicted current calculated from the input image data and generates the data signal using the input image data, a stress value of a pixel, and the alpha value.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes channel structures vertically stacked over a substrate and a source/drain structure laterally attached to the channel structures in the first direction. The semiconductor structure also includes a dielectric wall structure laterally attached to the channel structures in the second direction. The second direction is different from the first direction. In addition, the dielectric wall structure includes a bottom portion and a cap layer formed over the bottom portion. The semiconductor structure also includes an isolation feature vertically overlapping the cap layer of the dielectric wall structure and a gate structure formed around the channel structures and covering a sidewall of the isolation feature.

Abstract: A method of moving a susceptor in a processing system, suitable for use in semiconductor processing, is provided. The method includes: moving a first susceptor from an interior volume of a first enclosure to an interior volume of a process chamber during a first time period; and positioning, during a second time period, a first substrate on the first susceptor when the first susceptor is in the process chamber, wherein the interior volume of the first enclosure and interior volume of the process chamber are maintained at a non-atmospheric pressure from the beginning of the first time period until the end of the second time period.

Abstract: Provided is a resistive random access memory (RRAM). The resistive random access memory includes a plurality of unit structures disposed on a substrate. Each of the unit structures includes a first electrode, and a first metal oxide layer. The first electrode is disposed on the substrate. The first metal oxide layer is disposed on the first electrode. In addition, the resistive random access memory includes a second electrode. The second electrode is disposed on the plurality of unit structures and connected to the plurality of unit structures.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes an access transistor defined within an active region of a semiconductor substrate and a storage capacitor disposed on the access transistor. A recessed gate structure of the access transistor extends into the active region from above the active region. Source/drain contacts of the access transistor are disposed on the active region at opposite sides of the recessed gate structure. The storage capacitor includes: a composite bottom electrode, formed by alternately stacked first conductive layers and second conductive layers, wherein each second conductive layer is sandwiched between a pair of the first conductive layers, and tunnels laterally extend through the second conductive layers, respectively; a capacitor dielectric layer, covering inner and outer surfaces of the composite bottom electrode; and a top electrode, in contact with the composite bottom electrode through the capacitor dielectric layer.

Abstract: A keyswitch structure includes a casing, a first support, a second support, and a pressing stem. The casing forms an accommodating space and an opening communicating with the accommodating space. The first and second supports are disposed in the accommodating space and are directly and rotatably connected with the casing; the supports are also pivotally connected with each other. The pressing stem extends into the accommodating space to be rotatably connected with the first and second supports and protrudes from the casing through the opening. The pressing stem is movable parallel to a vertical direction relative to the casing through the first and second supports. A motion of the pressing stem in the vertical direction has a top dead center and a bottom dead center. When the pressing stem is at the top dead center and the bottom dead center, it does not touch the casing in the vertical direction.