Abstract: A battery device comprises a case, a core pack, a signal unit and a non-volatile memory, wherein the core pack, the signal unit and the non-volatile memory are disposed in the case. The case has a first transmission terminal and a second transmission terminal. The signal unit is electrically connected to the core pack and the first transmission terminal, and is configured to output a voltage signal associated with the state of the core pack through the first transmission terminal. The non-volatile memory is electrically connected to the second transmission terminal, and is configured to receive and store information associate with the core pack through the second transmission terminal.

Abstract: A lighting device having intelligent predicting function is provided, which includes a driving module, a light source and an intelligent predicting control module. The light source is connected to the driving module. The intelligent predicting control module is connected to the driving module and communicates with an intelligent predicting sensing device disposed at a position away from the intelligent predicting control module. The intelligent predicting sensing device detects a moving object to generate a first sensing signal and transmits the first sensing signal to the intelligent predicting control module, such that the intelligent predicting control module turns on the light source via the driving module.

Abstract: A negative electrode and a battery employing the same are provided. The negative electrode includes a negative electrode active layer and a protective layer. The protective layer is disposed on the negative electrode active layer, wherein the protective layer includes a nanopowder and a binder. The nanopowder has a specific surface area of 30 m2/g to 1,000 m2/g. The nanopowder has a binding energy less than or equal to ?2.5 eV. The weight ratio of the nanopowder to the binder is from 51:49 to 99:1. The nanopowder is a compound having a structure represented by Formula (I) MiXj??Formula (I) wherein M is Al, Mg, Zr, Zn, or Si, and X is O or N; i is 1, 2 or 3, and j is 1, 2, 3 or 4.

Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.

Abstract: A display device and a luminance and color compensation method thereof are provided. The luminance and color compensation method includes: calculating a plurality of compensation values of a plurality of display pixels of a plurality of setting grayscale values based on at least one selected color; recording the compensation values to obtain look-up information; receiving a plurality of image grayscale values of a display image, and obtaining a plurality of selected compensation values respectively corresponding to the display pixels according to the look-up information based on the image grayscale values; and respectively compensating display luminance of the display pixels according to the selected compensation values.

Abstract: A method includes forming a material layer over a substrate, forming a first hard mask (HM) layer over the material layer, forming a first trench, along a first direction, in the first HM layer. The method also includes forming first spacers along sidewalls of the first trench, forming a second trench in the first HM layer parallel to the first trench, by using the first spacers to guard the first trench. The method also includes etching the material layer through the first trench and the second trench, removing the first HM layer and the first spacers, forming a second HM layer over the material layer, forming a third trench in the second HM layer. The third trench extends along a second direction that is perpendicular to the first direction and overlaps with the first trench. The method also includes etching the material layer through the third trench.

Abstract: A hearing aiding apparatus integrating image-acoustics positioning, omnidirectional acoustic reception, and warning includes an apparatus body, an acoustic-receiving unit, an image-capturing unit, a warning device, and a control unit. The apparatus body has a playing unit. The acoustic-receiving unit captures audio signals around the apparatus body in a 360-degree range. The audio signals include ambient sounds and speaking voices. The image-capturing unit captures human-face images around the apparatus body. The control unit stores human-face images, speaking voices, and special ambient sound audios. The control unit receives the audio signals and the human-face images and uses computer vision to identify and enhance the speaking voices associated with the human-face images. Then the playing unit plays the speaking voices. The control unit issues a warning message via the warning device when receiving an ambient sound identical to a pre-stored special ambient sound.

Abstract: In accordance with some embodiments, a method includes placing a semiconductor wafer over a wafer stage; pressing a brush assembly against a backside surface of the semiconductor wafer, wherein the brush assembly comprises an inner brush member and an outer brush member laterally surrounding the inner brush member, and the outer brush member is made of a material having a lower rigidity than the inner brush member; rotating the brush assembly relative to the semiconductor wafer.

Abstract: In an embodiment, a method includes: immersing a wafer in a bath within a cleaning chamber, removing the wafer out of the bath through a solvent and into a gas within the cleaning chamber, determining a parameter value from the gas; and performing remediation within the cleaning chamber in response to determining that the parameter value is beyond a threshold value.

Abstract: The present disclosure relates to a semiconductor structure. The semiconductor structure includes a dielectric layer having a first dielectric surface and a second dielectric surface opposite to the first dielectric surface. The dielectric layer defines a recess in the first dielectric surface, and the recess includes a sidewall of the dielectric layer. A first conductive layer contacts a bottom surface of the dielectric layer. The sidewall of the dielectric layer is directly over the first conductive layer. A second conductive layer contacts the first conductive layer and the dielectric layer. The second conductive layer vertically extends from the first conductive layer to above the dielectric layer. A third conductive layer contacts the second conductive layer. The third conductive layer is laterally separated from a sidewall of the second conductive layer that faces the third conductive layer by a non-zero distance.

Abstract: A conductive polyester composition is provided, which includes a polyester base material and a conductive reinforcing material. The conductive reinforcing material includes a plurality of carbon nanotubes, and the plurality of carbon nanotubes are dispersed in the polyester base material. In each of the carbon nanotubes, a length of the carbon nanotube is defined as L, a diameter of the carbon nanotube is defined as D and is between 1 nanometer and 30 nanometers, and an L/D value of the carbon nanotube is between 300 and 2,000. The plurality of carbon nanotubes are in contact with each other to form a plurality of contact points, so that the conductive polyester composition has a surface impedance of not greater than 107 ?/sq.

Abstract: A functional resin material is manufactured by the following reagents including a polyol, a polyamine, a first cross-linking agent, a second cross-linking agent, and a nanocellulose. Each of the first cross-linking agent and the second cross-linking agent includes an isocyanate block.

Abstract: A method includes forming a conductive feature through a first dielectric layer, sequentially forming a second dielectric layer and a third dielectric layer over the first dielectric layer, and etching the third dielectric layer to form an opening. A first width of the opening at a top surface of the third dielectric layer is greater than a second width of the opening at a first interface between the third dielectric layer and the second dielectric layer. The method also includes etching the second dielectric layer until the opening extends to the conductive feature, thereby forming an enlarged opening, and forming a metal material in the enlarged opening. A third width of the enlarged opening at the first interface is equal to or less than a fourth width of the enlarged opening at a second interface between the second dielectric layer and the first dielectric layer.

Abstract: The present disclosure provides a thermoplastic resin composition having high rigidity and a low coefficient of linear thermal expansion and a molded article including the same. Specifically, the thermoplastic resin composition includes a base resin including at least two polypropylene-based resins having different melt indexes, an elastomer having a melt index (190° C., 2.16 kg) of 20 g/10 min to 35 g/10 min as measured by ASTM D1238, and inorganic particles, and has a flexural modulus (FM) of 2,500 MPa or more and a coefficient of linear thermal expansion (CLTE) of 60 ?m/m° C. or less.

Abstract: A semiconductor structure includes a semiconductor fin protruding from a substrate, an S/D feature disposed over the semiconductor fin, and a first dielectric fin and a second dielectric fin disposed over the substrate, where the semiconductor fin is disposed between the first dielectric fin and the second dielectric fin, where a first air gap is enclosed by a first sidewall of the epitaxial S/D feature and the first dielectric fin, and where a second air gap is enclosed by a second sidewall of the epitaxial S/D feature and the second dielectric fin.

Abstract: An image display system includes a display device, a second memory circuit, and an image processor circuit. The display device includes a panel and a first memory circuit, in which the first memory circuit is configured to store first predetermined data for controlling the panel. The second memory circuit is configured to store second predetermined data. The image processor circuit is configured to read first part data in the first predetermined data and second part data in the second predetermined data and compare the first part data with the second part data. If the first part data is identical to the second part data, the image processor circuit is further configured to output a driving signal according to the second predetermined data to control the panel to start displaying an image.

Abstract: A buckle locking structure device for a rear compartment cover of a pickup truck includes: a cross rod aluminum extrusion (1); a slider (2); a T-rod (3); a buckle block (4); a handle (5); a T-insertion block (7); and a frame body aluminum extrusion (8); a lug (403) provided center of a bottom surface of the buckle block (4); left and right semi-circular arc flanges (4031) provided on the center of the bottom surface of the buckle block (4) on a and to left and right sides of the lug (403), respectively; a left edge part slot (5031) extending towards lug (403) and being engageable with the left semi-circular arc flange (4031) of the buckle block (4) so that the left edge part slot (5031) slides on the left semi-circular arc flange (4031) of the buckle block (4) for fastening.

Abstract: A method of forming a semiconductor device includes: forming a semiconductor feature over a substrate, the semiconductor feature includes a conductive region; forming a dielectric layer over the semiconductor feature; patterning the dielectric layer to form a contact opening exposing a top surface of the conductive region; forming a monolayer over the dielectric layer, the top surface of the conductive region remaining exposed; and depositing a conductive material in the contact opening.