Abstract: The lockset includes a first body and a second body. The first body includes a lock body disposed in the first body, a first upper face having a lock hole and a first side face having a positioning hole. The second body includes a second upper face and a second side face. A rotatable buckle having a rotating unit and a lock unit is disposed on the second upper face. One end of the rotating unit is pivotally connected with the second upper face and the other end is connected with the lock unit. A positioning unit is disposed on the second side face. When the first side face is in a lock position, the positioning unit inserts into the positioning hole, and the rotatable unit may be rotated to insert the lock unit into the lock hole, wherein the lock body restricts the lock unit from leaving the lock hole.

Abstract: A lock for an electronic device having a lock hole includes a lock core, a fastener, and an adapter, wherein the lock core is operable and rotatable about a first axis; the fastener is connected to the lock core and is shifted away from the first axis. The adapter is connected to the lock core and the fastener. The rotation of the lock core about the first axis drives the adapter to drive the fastener to rotate about a second axis, When the lock core is locked, the locked lock core restricts the fastener from rotating, when the lock core is unlocked, the fastener is operable to rotate.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a gate stack over the semiconductor substrate. The semiconductor device structure includes spacers over opposite sidewalls of the gate stack. The spacers and the gate stack surround a recess over the gate stack. The semiconductor device structure includes a first insulating layer over the gate stack and an inner wall of the recess. The semiconductor device structure includes a second insulating layer over the first insulating layer. Materials of the first insulating layer and the second insulating layer are different, and a first thickness of the first insulating layer is less than a second thickness of the second insulating layer.

Abstract: The present disclosure provides a semiconductor structure, including a substrate, a metal gate, a dielectric layer, and an etch stop layer. The metal gate is positioned on the substrate and possesses a first surface. The dielectric layer surrounds the metal gate and possesses a second surface. The etch stop layer is in contact with both the first surface and the second surface. The first surface is higher than the second surface. The present disclosure also provides a method for manufacturing a semiconductor structure, including forming a dummy gate on a substrate; forming a second etch stop layer over the dummy gate; forming a dielectric layer over the dummy gate; replacing the dummy gate with a metal gate; etching back the dielectric layer to form a second surface of the dielectric layer lower than a first surface of the metal gate; and forming a first etch stop layer over the metal gate and the dielectric layer.

Abstract: A method includes a patterned hard mask layer formed over a substrate. The substrate is etched using the patterned hard mask layer to form a trench therein but leaving at least one elongated portion of the substrate inside the trench. A first isolation layer is formed over the patterned hard mask layer. The first isolation layer fills the trench and covers the at least one elongated portion of the substrate. A portion of the first isolation layer is removed to expose the at least one elongated portion of the substrate. The at least one elongated portion of the substrate is thereafter removed to form a first opening. A second isolation layer is formed over the first opening, the patterned hard mask layer, and the first isolation layer, the second isolation layer sealing the first opening to form an air gap.

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The semiconductor device also includes a contact plug in the dielectric layer, and a recess extending from a surface of the dielectric layer towards the contact plug. The semiconductor device further includes a capacitor element in the recess and electrically connected to the contact plug.

Abstract: A semiconductor structure includes a semiconductor substrate, a dielectric layer formed over the semiconductor substrate, a first anti-etch layer, a second anti-etch layer and a conductive material. The dielectric layer has an opening. The first anti-etch layer is formed on the sidewall of the opening and made of a material having resistance to peroxide. The second anti-etch layer is formed over the first anti-etch layer and made of a material having resistance to acid. The conductive material is formed within the opening and in contact with the second anti-etch layer.

Abstract: A semiconductor structure includes a semiconductor substrate, a dielectric layer formed over the semiconductor substrate, a first anti-etch layer, a second anti-etch layer and a conductive material. The dielectric layer has an opening. The first anti-etch layer is formed on the sidewall of the opening and made of a material having resistance to peroxide. The second anti-etch layer is formed over the first anti-etch layer and made of a material having resistance to acid. The conductive material is formed within the opening and in contact with the second anti-etch layer.

Abstract: The present disclosure provides a semiconductor structure, including a substrate, a metal gate, a dielectric layer, and an etch stop layer. The metal gate is positioned on the substrate and possesses a first surface. The dielectric layer surrounds the metal gate and possesses a second surface. The etch stop layer is in contact with both the first surface and the second surface. The first surface is higher than the second surface. The present disclosure also provides a method for manufacturing a semiconductor structure, including forming a dummy gate on a substrate; forming a second etch stop layer over the dummy gate; forming a dielectric layer over the dummy gate; replacing the dummy gate with a metal gate; etching back the dielectric layer to form a second surface of the dielectric layer lower than a first surface of the metal gate; and forming a first etch stop layer over the metal gate and the dielectric layer.

Abstract: The disclosure relates to an electronic device including a metallic shell. The electronic device is characterized in that the metallic shell has a groove. The groove separates the metallic shell into a main portion and an antenna portion. The main portion and the antenna are electrically insulated from each other.

Abstract: A burglarproof device for electronic device including a fastener, a control unit, and a lock core is provided. The fastener includes a plurality of lever arms surrounding a virtual axis. The control unit moves relative to the fastener and drives ends of the lever arms to move toward each other when approaching the fastener; the ends of the lever arms move away from each other when the control unit leaves the fastener. The lock core in an unlocked status permits the movement of the control unit relative to the fastener while the lock core in a locked status restricts the control unit from moving relative to the fastener.

Abstract: The description relates to a method of patterning a semiconductor device to create a through substrate via. The method produces a through substrate via having no photoresist material therein. An intermediate layer deposited over an interlayer dielectric prevents etching solutions from etching interlayer dielectric sidewalls to prevent peeling. The description relates to a semiconductor apparatus including a semiconductor substrate having a through substrate via therein. The semiconductor apparatus further includes an interlayer dielectric over the semiconductor substrate and an intermediate layer over semiconductor substrate and over sidewalls of the interlayer dielectric.

Abstract: A multiple function lock, which has dual, independently operated, locking mechanisms. In one embodiment, the multiple function lock is further comprised of a combination locking mechanism and a keyed locking mechanism. In one embodiment, the multiple function lock is further comprised of a gate mechanism for selectively securing and releasing a shackle of the lock.

Abstract: A lock includes a movable unit and a lock core structure including a restriction unit and a lock core. The restriction unit has a passage penetrating therethrough to form a first opening and a second opening on two opposite sides of the restriction unit. An extension wall is formed in the passage to face the second opening. The lock core is disposed in the passage to couple with the restriction unit and is selectively movable relative to the restriction unit in an axial direction. The lock core has an end face facing the extension wall and an extension portion disposed on one side of the lock core close to the first opening and selectively protruding outside the first opening. The movable unit selectively contacts the lock core and is able to reciprocally rotate, wherein rotation of the movable unit is linked to axial movement of the lock core.

Abstract: A lock structure for an electrical device is provided. The lock structure includes a rotatable fastener, a lock body, an operation device, and a housing. The lock body is disposed at least partially in the housing, connected with the operation device, and includes or couples with a driving portion. When the lock body is operated to achieve an unlocked state, the lock body allows the driving portion to move the rotatable fastener. At the same time, the operation device achieves an operable status in which the operation device can move driving portion to change the orientation of the rotatable fastener, resulting in the connection/detachment of the lock structure and the electronic device. When the lock body is in a locked state, the movement of the driving portion is restricted and the operation device is not operable to directly or indirectly rotate the rotatable fastener, resulting in the secure connection of the lock structure and the electronic device.

Abstract: A lock structure for an electrical device is provided. The lock structure includes a rotatable fastener, a lock body, an operation device, and a housing. The lock body is disposed at least partially in the housing, connected with the operation device, and couples with a driving portion. When the lock body is in an unlocked state, the lock body allows the driving portion to move the rotatable fastener. Simultaneously, the operation device can move the driving portion to change the orientation of the rotatable fastener, resulting in the connection/detachment of the lock structure and the electronic device. When the lock body is in a locked state, movement of the driving portion is restricted and the operation device cannot directly or indirectly rotate the rotatable fastener, resulting in the secure connection of the lock structure and the electronic device.

Abstract: A burglarproof device for electronic device including a fastener, a control unit, and a lock core is provided. The fastener includes a plurality of lever arms surrounding a virtual axis. The control unit moves relative to the fastener and drives ends of the lever arms to move toward each other when approaching the fastener; the ends of the lever arms move away from each other when the control unit leaves the fastener. The lock core in an unlocked status permits the movement of the control unit relative to the fastener while the lock core in a locked status restricts the control unit from moving relative to the fastener.

Abstract: A lock structure for an electrical device includes a rotatable fastener and a lock body. The rotatable fastener has an extending portion and a retaining portion, wherein the extending portion and the retaining portion form a T-shaped structure; the lock body is connected to the rotatable fastener and has a key hole. The lock body further has a first position and a second position in a radial direction of the extending portion. The key inserted in the key hole operates the lock body to displace from the second position to the first position, wherein the lock body drives the rotatable fastener to rotate to an unlocked position. When the lock body is in the first position, the lock body is pressed to displace from the first position to the second position, wherein the lock body drives the rotatable fastener to rotate to a locked position.

Abstract: A lock for an electronic device having a lock hole includes a lock core, a fastener, and an adapter, wherein the lock core is operable and rotatable about a first axis; the fastener is connected to the lock core and is shifted away from the first axis. The adapter is connected to the lock core and the fastener. The rotation of the lock core about the first axis drives the adapter to drive the fastener to rotate about a second axis, When the lock core is locked, the locked lock core restricts the fastener from rotating, when the lock core is unlocked, the fastener is operable to rotate.

Abstract: A combination lock having a combination lock mechanism and a key lock mechanism. The combination lock mechanism is able to unlock and lock the combination lock by switching a plurality of dials exposed on the surface of the combination lock, while the key lock mechanism allows the user to unlock the combination lock with a key.