Abstract: The disclosure discloses a layout design method, chip and terminal of power device, wherein the non-top metal layout design: the metal is routed along the first direction and several metal wires that fully occupy the available area of the die unit are thereby obtained, and the wiring properties of the metal wires are sequentially changed at intervals, making the source ends and the drain ends of the device are alternately distributed at intervals, and the metal routing in two or more layers of non-top metal are arranged vertically; the top metal layout design: the source end region and drain end region in the top metal are formed into sheets independently and the pad is arranged in the top metal region; eventually realize the interconnection of metal layers and complete the layout design.

Abstract: Compositions and methods for the management and treatment of inflammatory disorders including SLE are disclosed.

Abstract: In a cryogenic workbench, a cryogenic laser peening system and a control method, a tapered surface gap d is adjusted, based on the electromagnetic principle, to control the gasification volume of liquid nitrogen, then the temperatures of the copious cooling workbench and the surface of a sample are precisely controlled by means of the adjustment of the heat absorption amount of liquid nitrogen gasification, the temperature adjustment range and the temperature rising/lowering rate of the cryogenic laser peening system are effectively extended, and the precision of the control of the surface temperature of the sample is increased in combination with a closed-loop control. Additionally, an intelligent control of a cryogenic laser peening process is realized by means of a computer and a PLC control unit, whereby the usage amount of liquid nitrogen in the experiment process is reduced and the processing efficiency is improved.

Abstract: In a cryogenic workbench, a cryogenic laser peening system and a control method. A a tapered surface gap d is adjusted, based on the electromagnetic principle, to control the gasification volume of liquid nitrogen, then the temperatures of the copious cooling workbench and the surface of a sample are precisely controlled by means of the adjustment of the heat absorption amount of liquid nitrogen gasification, the temperature adjustment range and the temperature rising/lowering rate of the cryogenic laser peening system are effectively extended, and the precision of the control of the surface temperature of the sample is increased in combination with a closed-loop control. Additionally, an intelligent control of a cryogenic laser peening process is realized by means of a computer and a PLC control unit, whereby the usage amount of liquid nitrogen in the experiment process is reduced and the processing efficiency is improved.

Abstract: A cryogenic laser shock strengthening method and apparatus based on a laser-induced high temperature plasma technology includes: liquid nitrogen doped with absorber powder is irradiated using high power laser beams, to generate partial high temperature plasma, the liquid nitrogen quickly vaporizes and expands under the action of the high temperature plasma to form high-speed high-pressure air streams, and the high-speed high-pressure air streams shock a metal surface in a low temperature environment to implement the strengthening of the surface. In addition, continuous pressure accumulation of a vaporization cavity can be implemented by means of multiple laser pulses to further increase the shock wave pressure of a metal surface, thereby improving the surface strengthening effect of the metal surface.

Abstract: A method and a device for increasing a laser induced shock wave pressure. According to the method, plasmas (21) are generated by impinging an aluminium foil (20) using lasers; a high-voltage pulse electrode (22) discharges to the plasmas (21) to induce and form a photoelectric combined energy field and then high-temperature plasmas (21) having the characteristics of an ultra-high density and an ultra-high speed expansion are induced and generated; a surface to be processed is impacted by the high-temperature plasmas (21) in a restrained state; the laser induced shock wave pressure is increased substantially; the surface of a high-strength material is reinforced, and the strength, hardness, abrasion resistance and anti-fatigue performances of the high-strength material are improved. The device comprises a laser, the electrode (22), a high-voltage power supply (4), a discharging medium (12), a moving platform, etc.

Abstract: A method and a device for increasing a laser induced shock wave pressure. According to the method, plasmas (21) are generated by impinging an aluminium foil (20) using lasers; a high-voltage pulse electrode (22) discharges to the plasmas (21) to induce and form a photoelectric combined energy field and then high-temperature plasmas (21) having the characteristics of an ultra-high density and an ultra-high speed expansion are induced and generated; a surface to be processed is impacted by the high-temperature plasmas (21) in a restrained state; the laser induced shock wave pressure is increased substantially; the surface of a high-strength material is reinforced, and the strength, hardness, abrasion resistance and anti-fatigue performances of the high-strength material are improved. The device comprises a laser, the electrode (22), a high-voltage power supply (4), a discharging medium (12), a moving platform, etc.

Abstract: A NAND type multi-bit charge storage memory array comprises a first and a second memory strings each of which includes one or more charge storage memory cells and two select transistors. The charge storage memory cells are connected in series to form a memory cell string. The two select transistors are connected in series to both ends of the memory cell string, respectively. The NAND type multi-bit charge storage memory array further comprises a shared bit line and a first and a second bit lines. The shared bit line is connected with the first ends of the first and the second memory strings. The first and the second bit lines are connected to the second ends of the first and the second memory strings, respectively. The first select transistor and the second select transistor of each memory string are controlled by a first and a second select transistor control lines, respectively.