Abstract: A camera system with a full view monitoring function includes a base, a first camera apparatus, at least one second camera apparatus and a controller. The first camera apparatus is fixed on the base and invariably faces toward a first direction. The first camera apparatus is adapted to capture a panorama image. The second camera apparatus is movably disposed on the base and adjustably faces toward a detecting direction different from the first direction. The second camera apparatus is adapted to encircle around the first camera apparatus. The controller is electrically connected to the first camera apparatus and the second camera apparatus. The controller is adapted to analyze the panorama image to filter out a triggering zone, to encircle the second camera apparatus toward a detecting direction corresponding to the triggering zone, and to drive the second camera apparatus to capture a detecting image overlapping the triggering zone.

Abstract: A surveillance method is utilized in a camera system, wherein the camera system comprises a display device, a controller, a first camera disposed fixedly on a base of the camera system and constantly facing toward a first direction, and at least a second camera disposed on the base and controlled by the controller to rotate around the first camera. The surveillance method comprises the display device displaying a wide-angle image captured by the first camera; the controller receiving at least a directional instruction corresponding to at least a specific part of the wide-angle image; and the controller generating a plurality of control signals to steer the at least a second camera toward at least a second direction according to the at least a directional instruction.

Abstract: A camera system with a full view monitoring function includes a base, a first camera apparatus, at least one second camera apparatus and a controller. The first camera apparatus is fixed on the base and invariably faces toward a first direction. The first camera apparatus is adapted to capture a panorama image. The second camera apparatus is movably disposed on the base and adjustably faces toward a detecting direction different from the first direction. The second camera apparatus is adapted to encircle around the first camera apparatus. The controller is electrically connected to the first camera apparatus and the second camera apparatus. The controller is adapted to analyze the panorama image to filter out a triggering zone, to encircle the second camera apparatus toward a detecting direction corresponding to the triggering zone, and to drive the second camera apparatus to capture a detecting image overlapping the triggering zone.

Abstract: A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.

Abstract: A method for increasing the number of carbon nanotubes exposed on the triode structure device of a field emission display uses the technology of casting surface treatment. For advancing the current density and magnitude of CNT emitters, the method of casting surface treatment on the CNT emitters includes the steps of coating an adhesive material on the surface of the device; heating the adhesive material for adhibitting the surface; and lifting the adhesive material off the surface.

Abstract: A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.

Abstract: A method for forming a protective structure of active matrix triode field emission device is provided. The method comprises the steps of forming a silicon active region; depositing a gate oxide layer over the silicon active region; depositing and patterning a first metal layer over the gate oxide layer; doping impurities into portions of the said silicon active region to form a source/drain in a first conductive type and simultaneously to form a diode having a terminal in the first conductive type; forming ILD layer over the first metal layer and forming a plurality of contact holes thereon; depositing and patterning a second metal layer; forming a passivation layer over the second metal layer and forming a plurality of via holes thereon, depositing and patterning a third metal layer to form a gate and a tip structure.

Abstract: A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.

Abstract: A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.

Abstract: A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.

Abstract: A method for forming a protective structure of active matrix triode field emission device is provided. The method comprises the steps of forming a silicon active region; depositing a gate oxide layer over the silicon active region; depositing and patterning a first metal layer over the gate oxide layer; doping impurities into portions of the said silicon active region to form a source/drain in a first conductive type and simultaneously to form a diode having a terminal in the first conductive type; forming ILD layer over the first metal layer and forming a plurality of contact holes thereon; depositing and patterning a second metal layer; forming a passivation layer over the second metal layer and forming a plurality of via holes thereon, depositing and patterning a third metal layer to form a gate and a tip structure.

Abstract: A field emission device includes a first substrate, a second substrate spaced apart from the first substrate, a cathode structure formed between the first substrate and the second substrate for emitting electrons toward the second substrate, a luminescent layer formed between the first substrate and the second substrate for providing light when the electrons impinge thereon, and a reflecting layer formed between the second substrate and the luminescent layer for reflecting the light toward the first substrate.

Abstract: A field emission display (FED) having a grid plate with spacer structure and fabrication method thereof. A first wplate having first electrodes and electron emitters on a first surface is provided. A second plate having second electrodes and phosphor regions on a second surface is also provided, wherein the second surface is opposite the first surface. A grid plate with spacer structure and passages having grid electrodes is positioned between the two plates to maintain a predetermined interval. When a specific voltage is applied between the first electrode and the second electrode, electrons extracted from the electron emitters are accelerated by the grid electrodes through the passages to impact the phosphor regions.

Abstract: A method for manufacturing an electrode plate with improved reliability, comprising: (a) providing a glass substrate; (b) spreading an Indium Tin Oxide (ITO) layer on a specific area of the glass substrate; (c) exposing and developing the ITO layer; and (d) screen printing at least a thick film conductive layer on the ITO layer.

Abstract: A carbon nano-tube field emission display has a plurality of strip shaped gates, wherein the strip shaped gate of the triode structure is in place of the conventional hole shaped gate, and morecover, a plurality of cathode electrons are induced by the electric force from the side of the gate. Therefore, when the carbon nano-tube electron emission source emits electrons, which are controlled under the strip shaped gate, the diffusion direction of the electron beam is confined in the same direction. Consequently, controlling the image pixel and using the particular advantage of the triode-structure field emission display significantly improve the image uniformity and the luminous efficiency.

Abstract: A field emission display (FED) having a grid plate with spacer structure and fabrication method thereof. A first plate having first electrodes and electron emitters on a first surface is provided. A second plate having second electrodes and phosphor regions on a second surface is also provided, wherein the second surface is opposite the first surface. A grid plate with spacer structure and passages having grid electrodes is positioned between the two plates to maintain a predetermined interval. When a specific voltage is applied between the first electrode and the second electrode, electrons extracted from the electron emitters are accelerated by the grid electrodes through the passages to impact the phosphor regions.

Abstract: A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.

Abstract: A folding wheelchair includes two side frame units arranged in parallel at two sides, each side frame unit formed of two four-bar linkages arranged at different elevations, a plurality of folding bars transversely coupled between the side frame units, two sets of guide rods respectively coupled to the side frame units and adapted to guide folding of the wheelchair between the extended position and the collapsed position, and two swivel hooks for hooking on the pivot between each set of guide rods to lock the wheelchair in the extended position.

Abstract: A nanotube field emission display. The nanotube field emission display includes a nanotube field emission cell, an active device, and a capacitor. The nanotube field emission cell includes a cathode, a gate, and an anode, wherein the cathode has nanotubes for field emission where the gate is used. The active device includes a first electrode, a second electrode, and a control electrode, wherein the second electrode is coupled to the gate of the nanotube field emission cell. The capacitor is coupled between the gate of the nanotube field emission cell and a voltage source to store gate voltage to control illumination and gray level of the nanotube field emission cell.

Abstract: A carbon nano-tube field emission display has a plurality of strip shaped gate, wherein the strip shaped gate of the triode structure is now in place of the conventional hole shaped gate, moreover, pluralities of cathode electrons are induced by the electric force from the side of the gate. Therefore, when the carbon nano-tube electron emission source emits electrons, which is controlled under the strip shaped gate, and the diffusion direction of the electron beam is confined in the same direction. Consequently, controlling the image pixel and using the particular advantage of triode-structure field emission display significantly improve the image uniformity and the luminous efficiency.