Abstract: The invention provides a semiconductor structure, which comprises a plurality of metal circuit layers stacked with each other, the multi-layer metal circuit layer comprises an aluminum circuit layer which is located at the position closest to a surface among the plurality of circuit layers, the material of the aluminum circuit layer is made of aluminum, and the aluminum circuit layer comprises a concave portion.

Abstract: A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.

Abstract: A method for fabricating a semiconductor device includes the steps of first providing a wafer, forming a scribe line on a front side of the wafer, performing a plasma dicing process to dice the wafer along the scribe line without separating the wafer completely, performing a laminating process to form a tape on the front side of the wafer, performing a grinding process on a backside of the wafer, and then performing an expanding process to divide the wafer into chips.

Abstract: A semiconductor device includes a substrate having a bonding area and a pad area, a first inter-metal dielectric (IMD) layer on the substrate, a metal interconnection in the first IMD layer, a first pad on the bonding area and connected to the metal interconnection, and a second pad on the pad area and connected to the metal interconnection. Preferably, the first pad includes a first portion connecting the metal interconnection and a second portion on the first portion, and the second pad includes a third portion connecting the metal interconnection and a fourth portion on the third portion, in which top surfaces of the second portion and the fourth portion are coplanar.

Abstract: A method for fabricating a micro display device includes the steps of providing a wafer comprising a first area, a second area, and a third area, forming first bonding pads on the first area, forming second bonding pads on the second area, and forming third bonding pads on the third area. Preferably, the first bonding pads and the second bonding pads are made of different materials and the first bonding pads and the third bonding pads are made of different materials.

Abstract: The present invention provides a separator formed by hydrolysis of a resin film. The resin film comprises a non-hydrolyzable organic polymer; and a hydrolyzable organic polymer being hydrolyzable by treatment with at least one of an acid aqueous solution, an alkaline aqueous solution and pure water, wherein the content of the hydrolyzable organic polymer ranges from 10 parts by weight to 70 parts by weight relative to 100 parts by weight of the resin film. The separator of the present invention has good ion conductivity and thus, is extremely suitable for use in various types of batteries.

Abstract: A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.

Abstract: A semiconductor device, including a first semiconductor substrate and a second semiconductor substrate, is provided. A first bonding structure is located on the first semiconductor substrate and includes a first pad having an elongated shape. A second bonding structure is located on the second semiconductor substrate and includes a second pad having an elongated shape. The first semiconductor substrate is bonded to the second semiconductor substrate by bonding the first bonding structure and the second bonding structure. The first pad is bonded to the second pad, and an extension direction of the first pad is different from an extension direction of the second pad.

Abstract: A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.

Abstract: A semiconductor device, including a first semiconductor substrate and a second semiconductor substrate, is provided. A first bonding structure is located on the first semiconductor substrate and includes a first pad having an elongated shape. A second bonding structure is located on the second semiconductor substrate and includes a second pad having an elongated shape. The first semiconductor substrate is bonded to the second semiconductor substrate by bonding the first bonding structure and the second bonding structure. The first pad is bonded to the second pad, and an extension direction of the first pad is different from an extension direction of the second pad.

Abstract: A proton-conductive membrane includes a hydrophobic organic polymer and a hydrophilic proton-conductive component. The hydrophilic proton-conductive component includes one of an urea-containing material and a complex formed from an acidic substance and a basic substance, and a combination thereof. The hydrophilic proton-conductive component is present in an amount ranging from 23 parts by weight to 70 parts by weight based on 100 parts by weight of the proton-conductive membrane.

Abstract: A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.

Abstract: A structure of semiconductor device is provided. The structure includes a first bonding pattern, formed on a first substrate. A first grating pattern is disposed on the first substrate, having a plurality of first bars extending along a first direction. A second bonding pattern is formed on a second substrate. A second grating pattern, disposed on the second substrate, having a plurality of second bars extending along the first direction. The first bonding pattern is bonded to the second bonding pattern. One of the first grating pattern and the second grating pattern is stacked over and overlapping at the first direction with another one of the first grating pattern and the second grating pattern. A first gap between adjacent two of the first bars is different from a second gap between adjacent two of the second bars.

Abstract: The invention provides a flexible sealing film. The flexible sealing film includes a polymer layer and a thermosetting resin layer. The thermosetting layer is arranged on a surface of the polymer layer, and includes: (a) 100 parts by weight of epoxy resin, (b) 50 parts by weight to 100 parts by weight of a phosphorous flame retardant, (c) 20 parts by weight to 50 parts by weight of a toughening agent, (d) 0.1 parts by weight to 2.0 parts by weight of a phosphine compound, (e) 2 parts by weight to 12 parts by weight of silicon dioxide, and (f) 1 part by weight to 10 parts by weight of an ion exchanger. The invention further provides a flexible sealing film and a flexible sealing structure.

Abstract: A flexible sealing structure is provided. The flexible sealing structure includes a flexible sealing member and a membrane electrode assembly. The flexible sealing member includes a first flexible sealing film and a second flexible sealing film, and a hollow region is formed in a center of the flexible sealing member. The membrane electrode assembly is located between the first flexible sealing film and the second flexible sealing film. A side surface of the membrane electrode assembly is even. The membrane electrode assembly has a first surface and a second surface. The hollow region of the flexible sealing member exposes a portion of the first surface and a portion of the second surface of the membrane electrode assembly.

Abstract: A semiconductor structure includes a substrate having a frontside surface and a backside surface. A through-substrate via extends into the substrate from the frontside surface. The through-substrate via comprises a top surface. A metal cap covers the top surface of the through-substrate via. A plurality of cylindrical dielectric plugs is embedded in the metal cap. The cylindrical dielectric plugs are distributed only within a central area of the metal cap. The central area is not greater than a surface area of the top surface of the through-substrate via.

Abstract: A semiconductor structure includes a substrate having a frontside surface and a backside surface. A through-substrate via extends into the substrate from the frontside surface. The through-substrate via comprises a top surface. A metal cap covers the top surface of the through-substrate via. A plurality of cylindrical dielectric plugs is embedded in the metal cap. The cylindrical dielectric plugs are distributed only within a central area of the metal cap. The central area is not greater than a surface area of the top surface of the through-substrate via.

Abstract: A thin-film coil assembly includes a flexible substrate, an oscillation starting antenna, a resonant antenna, a first protective layer and a second protective layer. The flexible substrate has a first surface and a second surface opposed to the first surface. The oscillation starting antenna is disposed on the first surface of the flexible substrate. The resonant antenna is disposed on the second surface of the flexible substrate. Moreover, at least one capacitor is connected between a first end and a second end of the resonant antenna. An electromagnetic wave with a specified resonant frequency is emitted or received by the thin-film coil assembly in response to a resonant coupling effect of the resonant antenna and the oscillation starting antenna. The first protective layer covers the oscillation starting antenna. The second protective layer covers the resonant antenna.

Abstract: A wireless charging device includes a casing, a transmitter coil assembly and a shielding structure. The casing includes a main body with an accommodation space and an entrance. At least one power-receiving device is accommodated within the accommodation space. The transmitter coil assembly is disposed within the main body, and emits an electromagnetic wave with at least one specified frequency for wirelessly charging the at least one power-receiving device. Each transmitter coil assembly includes at least one antenna for receiving an AC signal so as to emit the electromagnetic wave. The shielding structure is attached on an outer surface of the main body or disposed within the main body. The shielding structure at least shields the antenna of the transmitter coil assembly so as to block divergence of the electromagnetic wave.

Abstract: A wireless charging device includes a first separation part, a second separation part, a flexible charging film and a circuit board. The first separation part has a first accommodation space. The second separation part has a second accommodation space. The flexible charging film is retractable back to the first accommodation space of the first separation part. The circuit board is electrically connected with the flexible charging film, and disposed within the second accommodation space of the second separation part. When the second separation part is moved in a direction away from the first separation part, the flexible charging film is stretched so as to wirelessly charge at least one power-receiving device. When the second separation part is moved in a direction toward the first separation part, the flexible charging film is retracted back to the first accommodation space of the first separation part.