Abstract: A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.

Abstract: There is provided a vehicle system including a sensing unit, a processing unit, a control unit and a display unit. The sensing unit is configured to capture an image frame containing an eyeball image from a predetermined distance. The processing unit is configured to calculate a pupil position of the eyeball image in the image frame and generate a drive signal corresponding to the pupil position. The control unit is configured to trigger a vehicle device associated with the pupil position according to the drive signal. The display unit is configured to show information of the vehicle device.

Abstract: A method forming a semiconductor package device includes: providing a substrate; forming a flip chip die on a first side on the substrate; and forming a molding compound on the first side of the substrate. The molding compound covers the flip chip die. The method further includes forming a heat sink on the molding compound; and forming a taping layer on a second side of the substrate, wherein the second side is opposite from the first side in a vertical direction. After forming the taping layer, the method further includes performing a pre-cut process and an etching process on the heat sink; and removing the taping layer.

Abstract: The application discloses a method and a system for shaping flexible blocks on a chip canvas in an integrated circuit design. An input is received describing geometric features of flexible blocks. A set of flexible blocks are generated based on the input. Obtained block areas of the set of flexible blocks are computed. Whether the set of flexible blocks are legal is determined based on determining whether area differences between the obtained block areas and a plurality of required areas for the set of flexible blocks meet a requirement. The set of flexible blocks are updated until the set of flexible blocks are all legal.

Abstract: An eye diagram measuring method includes: sampling a compensated input signal according to a reference voltage and a reference clock to obtain a first sampling result; and sampling a to-be-compensated input signal according to a scan voltage and a scan clock to obtain a second sampling result, including: (b1) storing a minimum phase and a voltage level which render the first sampling result identical to the second sampling result; (b2) increasing the voltage level and repeating operation (b1); (b3) decreasing the voltage level and repeating operation (b1); (b4) storing a maximum phase and the voltage level which render the first sampling result identical to the second sampling result; (b5) increasing the voltage level and repeating operation (b4); and (b6) decreasing the voltage level and repeating operation (b4). Voltage levels, maximum phases and minimum phases that are stored are for adjusting the reference voltage and the reference clock.

Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.

Abstract: A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.

Abstract: An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.

Abstract: An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.

Abstract: A semiconductor device includes a semiconductor fin. The semiconductor device includes a metal gate disposed over the semiconductor fin. The semiconductor device includes a gate dielectric layer disposed between the semiconductor fin and the metal gate. The semiconductor device includes first spacers sandwiching the metal gate. The first spacers have a first top surface and the gate dielectric layer has a second top surface, and the first top surface and a first portion of the second top surface are coplanar with each other. The semiconductor device includes second spacers further sandwiching the first spacers. The second spacers have a third top surface above the first top surface and the second top surface. The semiconductor device includes a gate electrode disposed over the metal gate.

Abstract: In various examples, systems and method are provided for generation of ground truth gaze data for training in-cabin monitoring systems and applications. A gaze target projector mounted to a known position inside a cabin may be used to project a gaze target onto an interior surface of the cabin. Because a beam of light may be used to produce the projected gaze target, the projected gaze target may be displayed at a projection point on the surface of the cabin interior, even if the surface at the projection point is curved, small, or an irregular shape. Three-dimensional coordinates of a projected gaze target in the cabin coordinate system may be determined and used to label image data that is captured as a projected gaze target is selectively projected onto an interior surface of the cabin and a test occupant's gaze is directed at the projected gaze target.

Abstract: An information handling system has a SIM card slot that accepts a micro SIM card and also accepts a nano SIM card when inserted in an adapter having an outer perimeter of a micro SIM card. The adapter holds contact pads of the nano SIM card in alignment with spring contacts of SIM card socket. When the adapter is inserted into the SIM card socket without a nano SIM card, a contact cover coupled to an eject member has an opening through which spring contacts extend against contact pads, and when the eject member is pressed inward to eject the SIM card adapter, the contact cover moves inward to press down on the spring contacts so that the SIM card adapter is kept clear of the spring contact through ejection.

Abstract: A method for CMP includes following operations. A first metal layer and a second metal layer are formed in a dielectric structure. The second metal layer is formed over a portion of the first metal layer. A first composition is provided to remove a portion of the first metal layer. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed to expose the second metal layer. A CMP operation is performed to remove a portion of the first metal layer, a portion of the second metal layer and a portion of the dielectric structure.

Abstract: An intelligent light supplement device, video apparatus, and an intelligent light supplement method are disclosed. The intelligent light supplement device includes a light source input module, a light source computing module, and a light source output module. The light source input module has a light sensing unit, which receives an ambient light source. The light source computing module is electrically connected to the light source input module, compares the ambient light source with a content of an illuminance comparison table to generate an illuminance control signal corresponding to an apparatus illuminance value, and/or compares the ambient light source with a content of a color temperature comparison table to generate a color temperature control signal corresponding to an apparatus color temperature value. The light source output module has a light emitting unit and drives the light emitting unit according to the illuminance control signal and/or the color temperature control signal.

Abstract: A semiconductor device having an improved source/drain region profile and a method for forming the same are disclosed. In an embodiment, a method includes etching one or more semiconductor fins to form one or more recesses; and forming a source/drain region in the one or more recesses, the forming the source/drain region including epitaxially growing a first semiconductor material in the one or more recesses at a temperature of 600° C. to 800° C., the first semiconductor material including doped silicon germanium; and conformally depositing a second semiconductor material over the first semiconductor material at a temperature of 300° C. to 600° C., the second semiconductor material including doped silicon germanium and having a different composition than the first semiconductor material.

Abstract: A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region and a second cell region and a diffusion region on the substrate extending through the first cell region and the second cell region. Preferably, the diffusion region includes a first H-shape and a second H-shape according to a top view.

Abstract: A semiconductor pattern is provided in the present invention, including a first line extending to one end in a first direction and a second line extending in a second direction perpendicular to the first direction and adjacent to the end of the first line in the first direction, wherein the end of the first line is provided with a rounding feature, the first line has a width in the second direction, and the width is gradually increased to a maximum width toward the end and gradually converged to form the rounding feature.

Abstract: A temperature compensation method for a weighing device, wherein the scale is provided with a temperature sensor, the method is performed by a processor, and includes, when the scale is powered on: receiving a first ambient temperature from the temperature sensor at a first time point; receiving a second ambient temperature from the temperature sensor at a second time point; obtaining a first compensation value associated to a default temperature threshold and a relationship between the first ambient temperature and the second ambient temperature, and obtaining a cumulative compensation value updated by the default temperature threshold; and obtaining a calibrated target temperature that is a target temperature of a subject sensed by the temperature sensor being calibrated by the cumulative compensation value, wherein the first time point is earlier than the second time point. The present disclosure also provides a weighing device with temperature sensing function.

Abstract: Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a frontside and a backside. The workpiece includes a substrate, a first plurality of channel members over a first portion of the substrate, a second plurality of channel members over a second portion of the substrate, an isolation feature sandwiched between the first and second portions of the substrate. The method also includes forming a joint gate structure to wrap around each of the first and second pluralities of channel members, forming a pilot opening in the isolation feature, extending the pilot opening through the join gate structure to form a gate cut opening that separates the joint gate structure into a first gate structure and a second gate structure, and depositing a dielectric material into the gate cut opening to form a gate cut feature.