Abstract: A device including a semiconductive substrate having opposite first and second surfaces, a light-sensitive element in the semiconductive substrate, an isolation structure extending at least from the second surface of the semiconductive substrate to within the semiconductive substrate, and a color filter over the second surface of the semiconductive substrate. The isolation structure includes a dielectric fill and a first high-k dielectric layer wrapping around the dielectric fill.

Abstract: An optical isolation structure and a method for fabricating the same are provided. The optical isolation structure includes a first dielectric layer, a second dielectric layer, a third dielectric layer and a dielectric post. The first dielectric layer includes a trench portion located in a trench of the semiconductor substrate. The second dielectric layer includes a trench portion covering the trench portion of the first dielectric layer and located in the trench of the semiconductor substrate. The third dielectric layer includes a trench portion covering the trench portion of the second dielectric layer and located in the trench of the semiconductor substrate. The dielectric post is disposed in the trench of the semiconductor substrate and covering the trench portion of the third dielectric layer.

Abstract: A semiconductor structure includes a sensor wafer comprising a plurality of sensor chips on and within a substrate. Each of the plurality of sensor chips includes a pixel array region, a bonding pad region, and a periphery region. The periphery region is between adjacent to a scribe line, and the scribe line is between adjacent sensor chips of the plurality of sensor chips. Each of the plurality of sensor chips further includes a stress-releasing trench structure embedded in the substrate, wherein the stress-releasing trench structure is in the periphery region, and the stress-releasing trench structure fully surrounds a perimeter of the pixel array region and the bonding pad region of a corresponding sensor chip of the plurality of sensor chips.

Abstract: An image sensor includes a semiconductor substrate, a gate dielectric layer over the semiconductor substrate, a gate electrode over the gate dielectric layer, and a protection oxide film in contact with a top surface of the gate electrode.

Abstract: An optical isolation structure and a method for fabricating the same are provided. The optical isolation structure includes a first dielectric layer, a second dielectric layer, a third dielectric layer and a dielectric post. The first dielectric layer includes a trench portion located in a trench of the semiconductor substrate. The second dielectric layer includes a trench portion covering the trench portion of the first dielectric layer and located in the trench of the semiconductor substrate. The third dielectric layer includes a trench portion covering the trench portion of the second dielectric layer and located in the trench of the semiconductor substrate. The dielectric post is disposed in the trench of the semiconductor substrate and covering the trench portion of the third dielectric layer.

Abstract: A method of fabricating polysilicon gate structure in an image sensor device includes depositing a gate dielectric layer on a surface of a substrate. Then a polysilicon layer is deposited over the gate dielectric layer. Next, a protection film is deposited over the polysilicon layer. A hard mask is formed over the protection film, and the polysilicon gate structure is patterned. Following that, the hard mask is stripped off. The protection film exhibits etching selectivity against the polysilicon layer and has a thickness of between 40 and 60 angstroms. The hard mask is removed by phosphoric acid solution wet etching process.

Abstract: An optical isolation structure and a method for fabricating the same are provided. The optical isolation structure includes a first dielectric layer, a second dielectric layer, a third dielectric layer and a dielectric post. The first dielectric layer includes a trench portion located in a trench of the semiconductor substrate. The second dielectric layer includes a trench portion covering the trench portion of the first dielectric layer and located in the trench of the semiconductor substrate. The third dielectric layer includes a trench portion covering the trench portion of the second dielectric layer and located in the trench of the semiconductor substrate. The dielectric post is disposed in the trench of the semiconductor substrate and covering the trench portion of the third dielectric layer.

Abstract: An optical isolation structure and a method for fabricating the same are provided. The optical isolation structure includes a first dielectric layer, a second dielectric layer, a third dielectric layer and a dielectric post. The first dielectric layer includes a trench portion located in a trench of the semiconductor substrate. The second dielectric layer includes a trench portion covering the trench portion of the first dielectric layer and located in the trench of the semiconductor substrate. The third dielectric layer includes a trench portion covering the trench portion of the second dielectric layer and located in the trench of the semiconductor substrate. The dielectric post is disposed in the trench of the semiconductor substrate and covering the trench portion of the third dielectric layer.

Abstract: A method of fabricating polysilicon gate structure in an image sensor device includes depositing a gate dielectric layer on a surface of a substrate. Then a polysilicon layer is deposited over the gate dielectric layer. Next, a protection film is deposited over the polysilicon layer. A hard mask is formed over the protection film, and the polysilicon gate structure is patterned. Following that, the hard mask is stripped off. The protection film exhibits etching selectivity against the polysilicon layer and has a thickness of between 40 and 60 angstroms. The hard mask is removed by phosphoric acid solution wet etching process.