Abstract: An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.

Abstract: A semiconductor structure includes a first transistor having a first source/drain (S/D) feature and a first gate; a second transistor having a second S/D feature and a second gate; a multi-layer interconnection disposed over the first and the second transistors; a signal interconnection under the first and the second transistors; and a power rail under the signal interconnection and electrically isolated from the signal interconnection, wherein the signal interconnection electrically connects one of the first S/D feature and the first gate to one of the second S/D feature and the second gate.

Abstract: A method and apparatus are disclosed. In an example from the perspective of a device configured with a set of carriers and/or cells including a first carrier and/or a first cell, the device determines a limited power value based on a maximum transmit power and a number of a set of sidelink feedback transmissions on the set of carriers and/or cells in a transmission time interval (TTI) and/or an occasion. The device determines a first power value based on a first downlink (DL) pathloss in the first carrier and/or the first cell. The device determines a first sidelink transmit power of a first sidelink feedback transmission based on the limited power value and the first power value. The set of sidelink feedback transmissions includes the first sidelink feedback transmission. The device performs the first sidelink feedback transmission, on the first carrier and/or the first cell, based on the first sidelink transmit power.

Abstract: Methods, systems, and apparatuses for Sidelink Discontinuous Reception (SL DRX) in a wireless communication system to avoid ambiguity on slot offset calculations on SL DRX. A method for a UE comprises performing a SL communication associated with a destination Identity (ID), having a SL DRX configuration associated with the SL communication, wherein the SL DRX configuration comprises at least an on-duration timer and a DRX cycle, deriving a first offset associated with the SL communication based on the destination ID and the DRX cycle, deriving a second offset associated with the SL communication based on the destination ID and a number of slots per subframe, starting the on-duration timer after a time period determined based on the second offset from the beginning of a subframe, wherein the subframe is determined based on at least the first offset, and monitoring Sidelink Control Information (SCI) when the on-duration timer is running.

Abstract: Methods, systems, and apparatuses are provided for enhancing timing alignment for uplink (UL) multi-Transmission/Reception Point (TRP) (or mTRP) scenarios in a wireless communication system. A method for a UE in a wireless communication system can comprise receiving a signaling, wherein the signaling indicates activation for a first TRP and/or is a Physical Downlink Control Channel (PDCCH) signal, determining to perform a first random access procedure on the first TRP, based on the signaling, to obtain a first Time Alignment (TA) information associated with the first TRP, and performing multi-TRP operation on the first TRP associated with the first TA information and a second TRP associated with a second TA information.

Abstract: A semiconductor device includes a first cell in a first row, wherein the first row extends in a first direction, the first cell having a first cell height measured in a second direction perpendicular to the first direction. The semiconductor device further includes a second cell in the first row, wherein the second cell has a second cell height measured in the second direction, the second cell height is less than the first cell height. The second cell includes a first active region having a first width measured in the second direction, and a second active region having a second width measured in the second direction, wherein the second width is different from the first width.

Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

Abstract: A method for expediting Secondary Cell (SCell) activation is proposed. Under the proposed enhanced direct SCell activation procedure, while adding an SCell to be activated state, the network can add transmission configuration indication (TCI) state information for the SCell in a radio resource control (RRC) signaling message, in addition to TCI state information for a list of candidate TCI states. Upon receiving the RRC signaling message, UE adds the SCell accordingly, and then activates the SCell based on the received TCI state information. Because there is no additional time required for receiving and processing the TCI state information via a media access control (MAC) control element (CE), the SCell activation time is reduced.

Abstract: A method and apparatus are disclosed from the perspective of a first device performing sidelink transmission. In one embodiment, the method includes the first device performing sensing on a first sidelink resource pool. The method further includes the first device determining one or more sets of resources based on one or more characteristics or one or more characteristic values associated with the sensing. The method also includes the first device transmitting a signal to at least a second device, wherein the signal indicates the one or more sets of resources and indicates the one or more characteristics or one or more characteristic values for the one or more sets of resources.

Abstract: The present disclosure describes an example method for routing a standard cell with multiple pins. The method can include modifying a dimension of a pin of the standard cell, where the pin is spaced at an increased distance from a boundary of the standard cell than an original position of the pin. The method also includes routing an interconnect from the pin to a via placed on a pin track located between the pin and the boundary and inserting a keep out area between the interconnect and a pin from an adjacent standard cell. The method further includes verifying that the keep out area separates the interconnect from the pin from the adjacent standard cell by at least a predetermined distance.

Abstract: An image sensor includes a substrate, a first photosensitive unit, a second photosensitive unit, a buffer layer, a dielectric grid, a first color filter, and a second color filter. The first photosensitive unit and the second photosensitive unit are in the substrate. The buffer layer covers the substrate, the first photosensitive unit and the second photosensitive unit. The dielectric grid is over the buffer layer and between the first photosensitive unit and the second photosensitive unit. The dielectric grid has a round top surface. The first color filter is over the first photosensitive unit. The first color filter is in contact with the round top surface and the buffer layer. The second color filter is over the second photosensitive unit.

Abstract: A high electron mobility transistor (HEMT) includes a substrate, a channel layer, a barrier layer and a passivation layer. A contact structure is disposed on the passivation layer and extends through the passivation layer and the barrier layer to directly contact the channel layer. The contact structure includes a metal layer, and the metal layer includes a metal material doped with a first additive. A weight percentage of the first additive in the metal layer is between 0% and 2%.

Abstract: A magnetic tunnel junction (MTJ) element includes a reference layer, a tunnel barrier layer, a free layer, and a dusting layer. The reference layer has a fixed magnetic orientation. The tunnel barrier layer is disposed on the reference layer, and includes an insulating material. The free layer has a changeable magnetic orientation, and includes a first surface and a second surface. The second surface is disposed to confront the tunnel barrier layer and opposite to the first surface. The dusting layer is formed on one of the first and second surfaces of the free layer, and includes a non-magnetic metal. Another aspect of the MTJ element, and a method for manufacturing the MTJ element are also disclosed.

Abstract: The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

Abstract: A method and apparatus are disclosed. In an example from the perspective of a first User Equipment (UE), the first UE generates a message requesting inter-UE coordination information, wherein the message includes information associated with a first priority value. The first UE generates a Medium Access Control (MAC) Protocol Data Unit (PDU) including the message. The first UE sets a value of a priority field in a first sidelink control information (SCI) based on a second priority value of the message, wherein the second priority value of the message is a configured value and/or a lowest priority value among a defined set of priority values. The first UE transmits the first SCI to one or more UEs including a second UE, wherein the first SCI schedules a first Physical Sidelink Shared Channel (PSSCH) transmission for transmitting the MAC PDU.

Abstract: In an example, a User Equipment (UE) operates with shared spectrum channel access on a carrier and/or a cell. The UE receives a configuration for configuring configured grants for uplink transmission in a bandwidth part (BWP). The configured grants include a first configured grant and a second configured grant. The UE configures a first minimum Downlink Feedback Indication (DFI) time delay for the first configured grant according to the configuration. The first minimum DFI time delay is for validation of Hybrid Automatic Repeat Request (HARQ) information in response to one or more first uplink transmissions. The UE configures a second minimum DFI time delay for the second configured grant according to the configuration. The second minimum DFI time delay is for validation of HARQ information in response to one or more second uplink transmissions. The UE does not expect the second minimum DFI time delay to have a different value than the first minimum DFI time delay.

Abstract: A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.

Abstract: A method and apparatus for video coding. According to the method, a set of candidates associated with coding modes or mode parameters are determined. Boundary matching costs associated with the set of candidates are determined, where each of the boundary matching costs is determined for one target candidate of the set of candidates. The costs are calculated by using reconstructed or predicted samples of the current block and one or more neighboring blocks of the current block. Each of the boundary matching costs is calculated using one target configuration selected from a plurality of configurations. A final candidate is selected from the set of candidates based on the boundary matching costs. The current block is encoded or decoded using the final candidate.

Abstract: A heating device includes a resonant circuit, a detection unit and a control unit. The resonant circuit includes an inverter circuit and a resonant tank. The inverter circuit provides a resonant tank current and a resonant tank voltage. The resonant tank includes a heating coil, a resonant tank capacitor, a resonant tank equivalent inductor and a resonant tank equivalent impedance. The detection unit detects the resonant tank current and the resonant tank voltage to acquire associated parameters. The detection unit calculates an inductance of the resonant tank equivalent inductor according to a capacitance of the resonant tank capacitor, a resonant period and a first expression. The detection unit calculates an impedance value of the resonant tank equivalent impedance according to the inductance of the resonant tank equivalent inductor, a time difference, the resonant period, a reference current value, a negative peak current value and a second expression.

Abstract: A power detection circuit is provided for detecting current total input power of a resonant circuit. The power detection circuit includes a detection circuit and an estimation circuit. The detection circuit receives a current signal and obtains resonant-slot baseband power according to the current signal to generate the baseband power value. The current signal represents a resonant-slot current generated by the resonant circuit. The estimation circuit receives the baseband power value and estimates the current total input power according to the baseband power value to generate an estimated power value.