Patents by Inventor Chun Wen

Chun Wen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods and systems for detecting computer security threats
    Patent number: 10061921
    Abstract: A behavior of a computer security threat is described in a root-cause chain, which is represented by a detection rule. The detection rule includes the objects of the root-cause chain and computer operations that represent links of the root-cause chain. An endpoint computer establishes a link between objects described in the detection rule when a corresponding computer operation between the objects is detected. Detected computer operations are accumulated to establish the links between objects. The threat is identified to be in the computer when the links of the detection rule have been established.
    Type: Grant
    Filed: February 13, 2017
    Date of Patent: August 28, 2018
    Assignee: Trend Micro Incorporated
    Inventors: Sheng Che Chang, Chun Wen Chang, Nai-Wei Chang, Meng-Che Lee
  • Backside Sensing BioFET with Enhanced Performance
    Publication number: 20180238827
    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure having a treated layer adjacent to the channel region, an isolation layer, and a dielectric layer in an opening of the isolation layer on the treated layer. The dielectric layer and the treated layer are disposed on opposite side of the transistor from a gate structure. The treated layer may be a lightly doped channel layer or a depleted layer.
    Type: Application
    Filed: April 20, 2018
    Publication date: August 23, 2018
    Inventors: Chun-Wen CHENG, Yi-Shao Liu, Fei-Lung Lai, Wei-Cheng Lin, Ta-Chuan Liao, Chien-Kuo Yang
  • Semiconductor structure and manufacturing method thereof
    Patent number: 10035700
    Abstract: A semiconductor structure includes a substrate including a plurality of vias passing through the substrate and filled with a conductive or semiconductive material, and an oxide layer surrounding the conductive or semiconductive material, the substrate defining a cavity therein; a membrane disposed over the substrate and the cavity; a heater disposed within the membrane and electrically connected with the substrate; and a sensing electrode disposed over the membrane and the heater.
    Type: Grant
    Filed: January 26, 2017
    Date of Patent: July 31, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Fei-Lung Lai, Shiang-Chi Lin
  • MEMS Devices Including MEMS Dies and Connectors Thereto
    Publication number: 20180194613
    Abstract: An embodiment is MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.
    Type: Application
    Filed: March 2, 2018
    Publication date: July 12, 2018
    Inventors: Chun-Wen Cheng, Jung-Huei Peng, Shang-Ying Tsai, Hung-Chia Tsai, Yi-Chuan Teng
  • CMOS COMPATIBLE BIOFET
    Publication number: 20180195998
    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
    Type: Application
    Filed: March 5, 2018
    Publication date: July 12, 2018
    Inventors: Alexander Kalnitsky, Yi-Shao Liu, Kai-Chih Liang, Chia-Hua Chu, Chun-Ren Cheng, Chun-Wen Cheng
  • METHOD OF USING BIOCHIP WITH BIOSENSORS
    Publication number: 20180195999
    Abstract: A method of sensing a biological sample includes introducing a fluid containing the biological sample through a first opening in a substrate. The method further includes passing the fluid from the first opening to a first cavity through at least one microfluidic channel. The method further includes repelling the biological sample from a first surface of the first cavity using a first surface modification layer. The method further includes attracting the biological sample to a sensing device using a plurality of modified surface patterns, wherein a first modified surface pattern of the plurality of modified surface patterns has different surface properties from a second modified surface pattern of the plurality of modified surface patterns. The method further includes outputting the fluid through a second opening in the substrate.
    Type: Application
    Filed: March 6, 2018
    Publication date: July 12, 2018
    Inventors: Yi-Shao LIU, Chun-Wen CHENG, Chun-Ren CHENG
  • MEMS pressure sensor and microphone devices having through-vias and methods of forming same
    Patent number: 10017378
    Abstract: A method embodiment includes providing a MEMS wafer. A portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device. A carrier wafer is bonded to the MEMS wafer. The carrier wafer is etched to expose the first membrane and a first surface of the second membrane to an ambient environment. A MEMS structure is formed in the MEMS wafer. A cap wafer is bonded to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure and a second sealed cavity including a second surface of the second membrane for the pressure sensor device. The cap wafer comprises an interconnect structure. A through-via electrically connected to the interconnect structure is formed in the cap wafer.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: July 10, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu
  • MEMS integrated pressure sensor devices and methods of forming same
    Patent number: 10017382
    Abstract: A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment.
    Type: Grant
    Filed: February 15, 2016
    Date of Patent: July 10, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Hua Chu, Chun-Wen Cheng
  • Detachable aerial photographic apparatus
    Patent number: 10009518
    Abstract: A detachable aerial photographic apparatus includes a carrier, an aircraft, a take-off delaying device and a trigger. The aircraft includes a main body disposed on the carrier, at least one propeller is pivotally furnished in the main body and a camera disposed on the main body. The take-off delaying device includes a movable member disposed on the carrier and at least one stopper connected to the movable member. The stopper is detachably connected to the aircraft for prevent the aircraft from taking off. The movable member is for detaching the stopper from the aircraft for releasing the aircraft. The trigger is electrically connected to the aircraft and the take-off delaying device. The trigger is for triggering the propeller and the movable member. A first time point when the propeller is triggered by the trigger is earlier than a second time point when the stopper is detached from the aircraft.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: June 26, 2018
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Wei-Ying Tai, Chan-Ru Chang, Chun-Wen Tang
  • Method for manufacturing a microphone
    Patent number: 9998843
    Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.
    Type: Grant
    Filed: February 8, 2016
    Date of Patent: June 12, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jung-Huei Peng, Chia-Hua Chu, Chun-wen Cheng, Chin-Yi Cho, Li-Min Hung, Yao-Te Huang
  • METHOD FOR INTEGRATING COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) DEVICES WITH MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES USING A FLAT SURFACE ABOVE A SACRIFICIAL LAYER
    Publication number: 20180148326
    Abstract: An integrated circuit (IC) with an integrated microelectromechanical systems (MEMS) structure is provided. In some embodiments, the IC comprises a semiconductor substrate, a back-end-of-line (BEOL) interconnect structure, the integrated MEMS structure, and a cavity. The BEOL interconnect structure is over the semiconductor substrate, and comprises wiring layers stacked in a dielectric region. Further, an upper surface of the BEOL interconnect structure is planar or substantially planar. The integrated MEMS structure overlies and directly contacts the upper surface of the BEOL interconnect structure, and comprises an electrode layer. The cavity is under the upper surface of the BEOL interconnect structure, between the MEMS structure and the BEOL interconnect structure.
    Type: Application
    Filed: September 27, 2017
    Publication date: May 31, 2018
    Inventors: Chun-Wen Cheng, Chia-Hua Chu
  • MEMS integrated pressure sensor and microphone devices and methods of forming same
    Patent number: 9981841
    Abstract: A micro-electromechanical systems (MEMS) device includes a MEMS substrate having a first opening, a second opening, and a membrane layer comprising a first membrane disposed over the first opening and a second membrane disposed over the second opening. The MEMS device also includes a carrier substrate bonded to a first side of the MEMS substrate, the carrier substrate having a first cavity exposing the first membrane and a second cavity exposing the second membrane, and a cap substrate bonded to a second side of the MEMS substrate. The cap substrate has a third cavity connected to the first opening and a fourth cavity connected to the second opening. The first membrane, the first cavity, and the third cavity are part of a pressure sensor. The fourth cavity extends completely through the cap substrate. The second membrane, the second cavity, and the fourth cavity are part of a microphone.
    Type: Grant
    Filed: May 15, 2017
    Date of Patent: May 29, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Hua Chu, Chun-Wen Cheng
  • Backside sensing BioFET with enhanced performance
    Patent number: 9976982
    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure having a treated layer adjacent to the channel region, an isolation layer, and a dielectric layer in an opening of the isolation layer on the treated layer. The dielectric layer and the treated layer are disposed on opposite side of the transistor from a gate structure. The treated layer may be a lightly doped channel layer or a depleted layer.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: May 22, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Yi-Shao Liu, Fei-Lung Lai, Wei-Cheng Lin, Ta-Chuan Liao, Chien-Kuo Yang
  • Stacked semiconductor structure and method of forming the same
    Patent number: 9975762
    Abstract: A stacked semiconductor structure includes a first substrate. A multilayer interconnect is disposed over the first substrate. Metal sections are disposed over the multilayer interconnect. First bonding features are over the metal sections. A second substrate has a front surface. A cavity extends from the front surface into a depth D in the second substrate. A movable structure is disposed over the front surface of the second substrate and suspending over the cavity. The movable structure includes a dielectric membrane, metal units over the dielectric membrane and a cap dielectric layer over the metal units. Second bonding features are over the cap dielectric layer and bonded to the first bonding features. The second bonding features extend through the cap dielectric layer and electrically coupled to the metal units.
    Type: Grant
    Filed: June 12, 2013
    Date of Patent: May 22, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Hua Chu, Chun-Wen Cheng
  • Apparatus for measuring a curvature of a thin film and the method thereof
    Patent number: 9970880
    Abstract: An apparatus for measuring a curvature of a thin film includes a light emitting module, a first optical module, a second optical module, a third optical module, and an image analysis module. The light emitting module emits a single laser to be used as an incident light. The incident light is transmitted through a first optical path provided by the first optical module, then the incident light is guided by the second optical module to be incident to the thin film through a second optical path. A reflected light reflected by the thin film is transmitted through the second optical path, then guided by the third optical module to be transmitted along a third optical path. The image analysis module determines the curvature of the thin film according to the characteristic of the reflected light.
    Type: Grant
    Filed: December 19, 2016
    Date of Patent: May 15, 2018
    Assignee: Industrial Technology Research Institute
    Inventors: Tzung-Te Chen, Hsueh-Hsing Liu, Chun-Wen Chu, Yi-Keng Fu
  • Method and Structure for CMOS-MEMS Thin Film Encapsulation
    Publication number: 20180118560
    Abstract: Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.
    Type: Application
    Filed: January 2, 2018
    Publication date: May 3, 2018
    Inventors: Yu-Chia Liu, Chia-Hua Chu, Chun-Wen Cheng
  • MEMS device structure with a capping structure
    Patent number: 9938138
    Abstract: An integrated circuit device includes a dielectric layer disposed over a semiconductor substrate, the dielectric layer having a sacrificial cavity formed therein, a membrane layer formed onto the dielectric layer, and a capping structure formed on the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity through a via formed into the membrane layer.
    Type: Grant
    Filed: February 20, 2017
    Date of Patent: April 10, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu
  • Integrated biosensor
    Patent number: 9933388
    Abstract: The present disclosure relates to an integrated chip having an integrated bio-sensor with horizontal and vertical sensing surfaces. In some embodiments, the integrated chip has a sensing device disposed within a substrate, and a lower metal wire over the substrate and electrically coupled to the sensing device. First and second metal vias are arranged on the lower metal wire at locations set back from sidewalls of the lower metal wire, and first and second upper metal wires respectively cover top surfaces of the first and second metal vias. A dielectric structure surrounds the lower metal wire, the first and second metal vias, and the first and second upper metal wires. A sensing well has sensing surfaces that extend along an upper surface of the lower metal wire and along sidewalls of the first and second metal vias and the first and second upper metal wires.
    Type: Grant
    Filed: September 27, 2016
    Date of Patent: April 3, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Wen Cheng, Fei-Lung Lai, Chia-Hua Chu, Yi-Hsien Chang, Hsin-Chieh Huang
  • MEMS DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20180086624
    Abstract: A MEMS device includes a substrate, a supporter, a first back plate, a second back plate and a diaphragm. The substrate has a cavity. The supporter is over the substrate. The first back plate is over the cavity and fixed on the supporter. The second back plate is over the cavity and fixed on the supporter. The diaphragm is between the first back plate and the second back plate. The diaphragm includes a first sub-diaphragm and a second sub-diaphragm over the cavity and fixed on the supporter.
    Type: Application
    Filed: September 26, 2016
    Publication date: March 29, 2018
    Inventors: CHUN-WEN CHENG, CHIA-HUA CHU, MING-DAO WU, TZU-HENG WU
  • MEMS devices including MEMS dies and connectors thereto
    Patent number: 9919914
    Abstract: An embodiment is MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.
    Type: Grant
    Filed: May 20, 2016
    Date of Patent: March 20, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Jung-Huei Peng, Shang-Ying Tsai, Hung-Chia Tsai, Yi-Chuan Teng