Patents by Inventor Chun-Yao Yang

Chun-Yao Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11101467
    Abstract: A metal-ion secondary battery is provided. The metal-ion secondary battery includes a positive electrode. The positive electrode includes at least one current-collecting layer and at least one active layer, wherein the current-collecting layer and the active layer are mutually stacked, and the current-collecting layer has at least one first through-hole.
    Type: Grant
    Filed: August 8, 2017
    Date of Patent: August 24, 2021
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chien-Chih Chiang, Kuang-Yao Chen, Chun-Hsing Wu, Chang-Chung Yang, Wen-Sheng Chang
  • Publication number: 20210143212
    Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.
    Type: Application
    Filed: January 25, 2021
    Publication date: May 13, 2021
    Inventors: Wei Chen, Hui-Lin Wang, Yu-Ru Yang, Chin-Fu Lin, Yi-Syun Chou, Chun-Yao Yang
  • Patent number: 10943948
    Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: March 9, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Wei Chen, Hui-Lin Wang, Yu-Ru Yang, Chin-Fu Lin, Yi-Syun Chou, Chun-Yao Yang
  • Publication number: 20200403144
    Abstract: A magnetoresistive random access memory (MRAM) structure includes a magnetic tunnel junction (MTJ), and a top electrode which contacts an end of the MTJ. The top electrode includes a top electrode upper portion and a top electrode lower portion. The width of the top electrode upper portion is larger than the width of the top electrode lower portion. A bottom electrode contacts another end of the MTJ. The top electrode, the MTJ and the bottom electrode form an MRAM.
    Type: Application
    Filed: July 9, 2019
    Publication date: December 24, 2020
    Inventors: Kuo-Chih Lai, Yi-Syun Chou, Ko-Wei Lin, Pei-Hsun Kao, Wei Chen, Chia-Fu Cheng, Chun-Yao Yang, Chia-Chang Hsu
  • Patent number: 10756128
    Abstract: An integrated circuit device includes a complementary metal oxide semiconductor (CMOS) image sensor. The complementary metal oxide semiconductor (CMOS) image sensor includes a P-N junction photodiode, a transistor gate, a polysilicon plug and a stacked metal layer. The P-N junction photodiode is disposed in a substrate. The transistor gate and the polysilicon plug are disposed on the substrate, wherein the polysilicon plug is directly connected to the P-N junction photodiode. The stacked metal layer connects the polysilicon plug to the transistor gate, wherein the stacked metal layer includes a lower metal layer and an upper metal layer, and the lower metal layer includes a first metal silicide part contacting to the polysilicon plug. The present invention also provides a method of fabricating said integrated circuit device.
    Type: Grant
    Filed: January 10, 2019
    Date of Patent: August 25, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kuo-Chih Lai, Shih-Min Chou, Ko-Wei Lin, Chin-Fu Lin, Wei-Chuan Tsai, Chun-Yao Yang, Chia-Fu Cheng, Yi-Syun Chou, Wei Chen
  • Publication number: 20200227471
    Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.
    Type: Application
    Filed: January 30, 2019
    Publication date: July 16, 2020
    Inventors: Wei Chen, Hui-Lin Wang, Yu-Ru Yang, Chin-Fu Lin, Yi-Syun Chou, Chun-Yao Yang
  • Publication number: 20200212090
    Abstract: An integrated circuit device includes a complementary metal oxide semiconductor (CMOS) image sensor. The complementary metal oxide semiconductor (CMOS) image sensor includes a P-N junction photodiode, a transistor gate, a polysilicon plug and a stacked metal layer. The P-N junction photodiode is disposed in a substrate. The transistor gate and the polysilicon plug are disposed on the substrate, wherein the polysilicon plug is directly connected to the P-N junction photodiode. The stacked metal layer connects the polysilicon plug to the transistor gate, wherein the stacked metal layer includes a lower metal layer and an upper metal layer, and the lower metal layer includes a first metal silicide part contacting to the polysilicon plug. The present invention also provides a method of fabricating said integrated circuit device.
    Type: Application
    Filed: January 10, 2019
    Publication date: July 2, 2020
    Inventors: Kuo-Chih Lai, Shih-Min Chou, Ko-Wei Lin, Chin-Fu Lin, Wei-Chuan Tsai, Chun-Yao Yang, Chia-Fu Cheng, Yi-Syun Chou, Wei Chen
  • Patent number: 10340350
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: July 2, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shih-Min Chou, Yun-Tzu Chang, Wei-Ning Chen, Wei-Ming Hsiao, Chia-Chang Hsu, Kuo-Chih Lai, Yang-Ju Lu, Yen-Chen Chen, Chun-Yao Yang
  • Publication number: 20180331193
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.
    Type: Application
    Filed: July 25, 2018
    Publication date: November 15, 2018
    Inventors: Shih-Min Chou, Yun-Tzu Chang, Wei-Ning Chen, Wei-Ming Hsiao, Chia-Chang Hsu, Kuo-Chih Lai, Yang-Ju Lu, Yen-Chen Chen, Chun-Yao Yang
  • Patent number: 10128366
    Abstract: A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed partially within the semiconductor substrate. The gate structure includes a gate dielectric layer formed over the semiconductor substrate, a gate electrode formed over the gate dielectric layer, and a spacer formed on side surfaces of the gate dielectric layer and the gate electrode. A laterally extending portion of the epitaxial structure extends laterally at an area below a top surface of the semiconductor substrate in a direction toward an area below the gate structure. A lateral end of the laterally extending portion is below the spacer.
    Type: Grant
    Filed: February 6, 2018
    Date of Patent: November 13, 2018
    Assignee: UNITED MICROELECTRONICS CORPORATION
    Inventors: Yu-Ying Lin, Kuan Hsuan Ku, I-Cheng Hu, Chueh-Yang Liu, Shui-Yen Lu, Yu Shu Lin, Chun Yao Yang, Yu-Ren Wang, Neng-Hui Yang
  • Publication number: 20180261675
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.
    Type: Application
    Filed: March 8, 2017
    Publication date: September 13, 2018
    Inventors: Shih-Min Chou, Yun-Tzu Chang, Wei-Ning Chen, Wei-Ming Hsiao, Chia-Chang Hsu, Kuo-Chih Lai, Yang-Ju Lu, Yen-Chen Chen, Chun-Yao Yang
  • Patent number: 10074725
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: September 11, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shih-Min Chou, Yun-Tzu Chang, Wei-Ning Chen, Wei-Ming Hsiao, Chia-Chang Hsu, Kuo-Chih Lai, Yang-Ju Lu, Yen-Chen Chen, Chun-Yao Yang
  • Publication number: 20180158943
    Abstract: A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed partially within the semiconductor substrate. The gate structure includes a gate dielectric layer formed over the semiconductor substrate, a gate electrode formed over the gate dielectric layer, and a spacer formed on side surfaces of the gate dielectric layer and the gate electrode. A laterally extending portion of the epitaxial structure extends laterally at an area below a top surface of the semiconductor substrate in a direction toward an area below the gate structure. A lateral end of the laterally extending portion is below the spacer.
    Type: Application
    Filed: February 6, 2018
    Publication date: June 7, 2018
    Inventors: Yu-Ying Lin, Kuan Hsuan KU, I-Cheng Hu, Chueh-Yang Liu, Shui-Yen Lu, Yu Shu LIN, Chun Yao YANG, Yu-Ren Wang, Neng-Hui Yang
  • Patent number: 9966434
    Abstract: A semiconductor device includes a substrate including a plurality of transistor devices formed thereon, at least an epitaxial structure formed in between the transistor devices, and a tri-layered structure formed on the epitaxial structure. The epitaxial structure includes a first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. The tri-layered structure includes an undoped epitaxial layer, a metal-semiconductor compound layer, and a doped epitaxial layer sandwiched in between the undoped epitaxial layer and the metal-semiconductor compound layer. The undoped epitaxial layer and the doped epitaxial layer include at least the second semiconductor material.
    Type: Grant
    Filed: June 26, 2017
    Date of Patent: May 8, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Shiou Hsieh, Chun-Yao Yang, Shi-You Liu, Rong-Sin Lin, Han-Ting Yen, Yi-Wei Chen, I-Cheng Hu, Yu-Shu Lin, Neng-Hui Yang
  • Publication number: 20180108570
    Abstract: A method for manufacturing fins includes following steps. A substrate including a plurality of fins formed thereon is provided. At least an ion implantation is performed to the fins. A thermal process is performed after the ion implantation. An insulating layer is formed on the substrate, and the fins are embedded in the insulating layer. Thereafter, a portion of the insulating layer is removed to form an isolation structure on the substrate, and the fins are exposed from a top surface of the isolation structure. The insulating layer is formed after the ion implantation and the thermal process. Or, the isolation structure is formed before the ion implantation, or between the ion implantation and the thermal process.
    Type: Application
    Filed: November 19, 2017
    Publication date: April 19, 2018
    Inventors: Ming-Shiou Hsieh, Chun-Yao Yang, Shi-You Liu, Rong-Sin Lin, Han-Ting Yen, Neng-Hui Yang, Tsai-Yu Wen, Ching-I Li
  • Patent number: 9947588
    Abstract: A method for manufacturing fins includes following steps. A substrate including a plurality of fins formed thereon is provided. At least an ion implantation is performed to the fins. A thermal process is performed after the ion implantation. An insulating layer is formed on the substrate, and the fins are embedded in the insulating layer. Thereafter, a portion of the insulating layer is removed to form an isolation structure on the substrate, and the fins are exposed from a top surface of the isolation structure. The insulating layer is formed after the ion implantation and the thermal process. Or, the isolation structure is formed before the ion implantation, or between the ion implantation and the thermal process.
    Type: Grant
    Filed: November 19, 2017
    Date of Patent: April 17, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Shiou Hsieh, Chun-Yao Yang, Shi-You Liu, Rong-Sin Lin, Han-Ting Yen, Neng-Hui Yang, Tsai-Yu Wen, Ching-I Li
  • Patent number: 9929264
    Abstract: A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed partially within the semiconductor substrate. A vertically extending portion of the epitaxial structure extends vertically above a top surface of the semiconductor substrate in an area adjacent the gate structure. A laterally extending portion of the epitaxial structure extends laterally at an area below the top surface of the semiconductor substrate in a direction toward an area below the gate structure and beyond an area where the epitaxial structure extends vertically. The device further includes an interlayer dielectric layer between a side surface of the vertically extending portion of the epitaxial structure and a side surface of the gate structure. A top surface of the laterally extending portion of the epitaxial structure directly contacts the interlayer dielectric layer.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: March 27, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Ying Lin, Kuan Hsuan Ku, I-Cheng Hu, Chueh-Yang Liu, Shui-Yen Lu, Yu Shu Lin, Chun Yao Yang, Yu-Ren Wang, Neng-Hui Yang
  • Patent number: 9859164
    Abstract: A method for manufacturing fins includes following steps. A substrate including a plurality of fins formed thereon is provided. At least an ion implantation is performed to the fins. A thermal process is performed after the ion implantation. An insulating layer is formed on the substrate, and the fins are embedded in the insulating layer. Thereafter, a portion of the insulating layer is removed to form an isolation structure on the substrate, and the fins are exposed from a top surface of the isolation structure. The insulating layer is formed after the ion implantation and the thermal process. Or, the isolation structure is formed before the ion implantation, or between the ion implantation and the thermal process.
    Type: Grant
    Filed: October 17, 2016
    Date of Patent: January 2, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Shiou Hsieh, Chun-Yao Yang, Shi-You Liu, Rong-Sin Lin, Han-Ting Yen, Neng-Hui Yang, Tsai-Yu Wen, Ching-I Li
  • Publication number: 20170365703
    Abstract: A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed partially within the semiconductor substrate. A vertically extending portion of the epitaxial structure extends vertically above a top surface of the semiconductor substrate in an area adjacent the gate structure. A laterally extending portion of the epitaxial structure extends laterally at an area below the top surface of the semiconductor substrate in a direction toward an area below the gate structure and beyond an area where the epitaxial structure extends vertically. The device further includes an interlayer dielectric layer between a side surface of the vertically extending portion of the epitaxial structure and a side surface of the gate structure. A top surface of the laterally extending portion of the epitaxial structure directly contacts the interlayer dielectric layer.
    Type: Application
    Filed: June 20, 2017
    Publication date: December 21, 2017
    Inventors: Yu-Ying LIN, Kuan Hsuan KU, I-Cheng HU, Chueh-Yang LIU, Shui-Yen LU, Yu Shu LIN, Chun Yao YANG, Yu-Ren WANG, Neng-Hui YANG
  • Patent number: 9842760
    Abstract: A method for fabricating semiconductor device is disclosed. First, a substrate having a fin-shaped structure thereon is provided, a spacer is formed adjacent to the fin-shaped structure, and the spacer is used as mask to remove part of the substrate for forming an isolation trench, in which the isolation trench includes two sidewall portions and a bottom portion. Next, a plasma doping process is conducted to implant dopants into the two sidewall portions and the bottom portion of the isolation trench.
    Type: Grant
    Filed: July 20, 2016
    Date of Patent: December 12, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Li-Wei Feng, Tong-Jyun Huang, Shih-Hung Tsai, Jyh-Shyang Jenq, Chun-Yao Yang, Ming-Shiou Hsieh, Rong-Sin Lin