Patents by Inventor Chun-Yin Tsai

Chun-Yin Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240115151
    Abstract: A physiological signal measurement system, a physiological signal measurement method, and a mobile device protective case are provided. The physiological signal measurement system includes a first electrode, a second electrode, a reference electrode, an impedance front-end circuit module and a dynamic signal matching module. The first electrode, the second electrode and the reference electrode are used to obtain a first sensing signal and a second sensing signal. The impedance front-end circuit module is used to detect a first impedance of the first electrode and a second impedance of the second electrode, and obtain an original differential signal according to the first sensing signal and the second sensing signal. The dynamic signal matching module is used to obtain a calibration sequence according to the first impedance, the second impedance and the original differential signal, and obtain a compensated calibration sequence according to the calibration sequence and the original differential signal.
    Type: Application
    Filed: October 5, 2023
    Publication date: April 11, 2024
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yun-Yi HUANG, Yu-Chiao TSAI, Chun LIU, Heng-Yin CHEN
  • Publication number: 20230382716
    Abstract: Various embodiments of the present disclosure are directed towards an electronic device that comprises a semiconductor substrate having a first surface opposite a second surface. The semiconductor substrate at least partially defines a cavity. A first microelectromechanical systems (MEMS) device is disposed along the first surface of the semiconductor substrate. The first MEMS device comprises a first backplate and a diaphragm vertically separated from the first backplate. A second MEMS device is disposed along the first surface of the semiconductor substrate. The second MEMS device comprises spring structures and a moveable element. The spring structures are configured to suspend the moveable element in the cavity. A segment of the semiconductor substrate continuously laterally extends from under a sidewall of the first MEMS device to under a sidewall of the second MEMS device.
    Type: Application
    Filed: August 9, 2023
    Publication date: November 30, 2023
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Chun Yin Tsai, Wen Cheng Kuo
  • Publication number: 20230370783
    Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate; and a membrane over the substrate and configured to generate charges in response to an acoustic wave, the membrane being in a polygonal shape including vertices. The membrane includes a via pattern includes: first lines that partition the membrane into slices and extend to the vertices of the membrane such that the slices are separated from each other near an anchored region of the membrane and connected to each other around a central region; and second lines extending from the anchored region of the membrane toward the central region of the membrane, each of the first lines or each of the second lines including non-straight lines.
    Type: Application
    Filed: July 21, 2023
    Publication date: November 16, 2023
    Inventors: CHUN-WEN CHENG, CHUN YIN TSAI, CHIA-HUA CHU
  • Patent number: 11750980
    Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate; and a membrane over the substrate and configured to generate charges in response to an acoustic wave, the membrane being in a polygonal shape including vertices. The membrane includes a via pattern having first lines that partition the membrane into slices and extend to the vertices of the membrane such that the slices are separated from each other near an anchored region of the membrane and connected to each other around a central region. The via pattern further includes second lines extending from the anchored region of the membrane toward the central region of the membrane. Each of the second lines includes a length less than a length of each of the first lines.
    Type: Grant
    Filed: July 27, 2022
    Date of Patent: September 5, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chun-Wen Cheng, Chun Yin Tsai, Chia-Hua Chu
  • Patent number: 11581476
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a first piezoelectric layer, and a first dummy layer. The first piezoelectric layer is over the substrate, and the first piezoelectric layer has a first top surface. The first dummy layer is over the first piezoelectric layer, and the first dummy layer has a second top surface. And an average roughness of the first top surface is greater than an average roughness of the second top surface. A method for manufacturing the semiconductor structure is also provided.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: February 14, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chun-Wen Cheng, Chun Yin Tsai, Chia-Hua Chu
  • Publication number: 20220369041
    Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate; and a membrane over the substrate and configured to generate charges in response to an acoustic wave, the membrane being in a polygonal shape including vertices. The membrane includes a via pattern having first lines that partition the membrane into slices and extend to the vertices of the membrane such that the slices are separated from each other near an anchored region of the membrane and connected to each other around a central region. The via pattern further includes second lines extending from the anchored region of the membrane toward the central region of the membrane. Each of the second lines includes a length less than a length of each of the first lines.
    Type: Application
    Filed: July 27, 2022
    Publication date: November 17, 2022
    Inventors: CHUN-WEN CHENG, CHUN YIN TSAI, CHIA-HUA CHU
  • Publication number: 20220289556
    Abstract: Various embodiments of the present disclosure are directed towards an electronic device that comprises a semiconductor substrate having a first surface opposite a second surface. The semiconductor substrate at least partially defines a cavity. A first microelectromechanical systems (MEMS) device is disposed along the first surface of the semiconductor substrate. The first MEMS device comprises a first backplate and a diaphragm vertically separated from the first backplate. A second MEMS device is disposed along the first surface of the semiconductor substrate. The second MEMS device comprises spring structures and a moveable element. The spring structures are configured to suspend the moveable element in the cavity. A segment of the semiconductor substrate continuously laterally extends from under a sidewall of the first MEMS device to under a sidewall of the second MEMS device.
    Type: Application
    Filed: June 21, 2021
    Publication date: September 15, 2022
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Chun Yin Tsai, Wen Cheng Kuo
  • Patent number: 11418887
    Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate and a membrane over the substrate. The membrane includes a piezoelectric material configured to generate charges in response to an acoustic wave. The membrane includes a via pattern having first lines that partition the membrane into slices such that the slices are separated from each other at a first region near an edge of the membrane and connected to each other at a second region.
    Type: Grant
    Filed: June 18, 2020
    Date of Patent: August 16, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chun-Wen Cheng, Chun Yin Tsai, Chia-Hua Chu
  • Publication number: 20220227618
    Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a first dielectric layer formed over the substrate. The semiconductor device structure also includes a first movable membrane formed over the first dielectric layer. In addition, the first movable membrane has a first corrugated portion and a first edge portion connecting to the first corrugated portion. The semiconductor device structure further includes a second dielectric layer formed over the first movable membrane. In addition, the first edge portion is sandwiched between the first dielectric layer and the second dielectric layer, the first corrugated portion is partially sandwiched between the first dielectric layer and the second dielectric layer and is partially exposed by a cavity, and a bottom surface of the first corrugated portion is lower than a bottom surface of the first edge portion.
    Type: Application
    Filed: April 1, 2022
    Publication date: July 21, 2022
    Inventors: Yi-Chuan TENG, Chun-Yin TSAI, Chia-Hua CHU, Chun-Wen CHENG
  • Patent number: 11292712
    Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a first dielectric layer over a substrate and forming a first recess in the first dielectric layer. The method also includes conformally forming a first movable membrane over the first dielectric layer. In addition, the first movable membrane has a first corrugated portion in the first recess. The method further includes forming a second dielectric layer over the first movable membrane and partially removing the substrate, the first dielectric layer, and the second dielectric layer to form a cavity. In addition, the first corrugated portion of the first movable membrane is partially sandwiched between the first dielectric layer and the second dielectric layer.
    Type: Grant
    Filed: December 31, 2019
    Date of Patent: April 5, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Yi-Chuan Teng, Chun-Yin Tsai, Chia-Hua Chu, Chun-Wen Cheng
  • Patent number: 11184694
    Abstract: An integrated microphone device is provided. The integrated microphone device includes a substrate, a plate, and a membrane. The substrate includes an aperture allowing acoustic pressure to pass through. The plate is disposed on a side of the substrate. The membrane is disposed between the substrate and the plate and movable relative to the plate as acoustic pressure strikes the membrane. The membrane includes a vent valve having an open area that is variable in response to a change in acoustic pressure.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: November 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Chun-Yin Tsai, Tzu-Heng Wu, Wen-Cheng Kuo
  • Patent number: 11089408
    Abstract: A MEMS microphone includes a backplate that has a plurality of open areas, and a diaphragm spaced apart from the backplate. The diaphragm is deformable by sound waves to cause gaps between the backplate and the diaphragm being changed at multiple locations on the diaphragm. The diaphragm includes a plurality of anchor areas, located near a boundary of the diaphragm, which is fixed relative to the backplate. The diaphragm also includes multiple vent valves. Examples of the vent valve include a wing vent valve and a vortex vent valve.
    Type: Grant
    Filed: June 22, 2020
    Date of Patent: August 10, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Chun Yin Tsai
  • Publication number: 20210098681
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a first piezoelectric layer, and a first dummy layer. The first piezoelectric layer is over the substrate, and the first piezoelectric layer has a first top surface. The first dummy layer is over the first piezoelectric layer, and the first dummy layer has a second top surface. And an average roughness of the first top surface is greater than an average roughness of the second top surface. A method for manufacturing the semiconductor structure is also provided.
    Type: Application
    Filed: March 13, 2020
    Publication date: April 1, 2021
    Inventors: CHUN-WEN CHENG, CHUN YIN TSAI, CHIA-HUA CHU
  • Publication number: 20210067880
    Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate and a membrane over the substrate. The membrane includes a piezoelectric material configured to generate charges in response to an acoustic wave. The membrane includes a via pattern having first lines that partition the membrane into slices such that the slices are separated from each other at a first region near an edge of the membrane and connected to each other at a second region.
    Type: Application
    Filed: June 18, 2020
    Publication date: March 4, 2021
    Inventors: CHUN-WEN CHENG, CHUN YIN TSAI, CHIA-HUA CHU
  • Publication number: 20200322733
    Abstract: AMEMS microphone includes a backplate that has a plurality of open areas, and a diaphragm spaced apart from the backplate. The diaphragm is deformable by sound waves to cause gaps between the backplate and the diaphragm being changed at multiple locations on the diaphragm. The diaphragm includes a plurality of anchor areas, located near a boundary of the diaphragm, which is fixed relative to the backplate. The diaphragm also includes multiple vent valves. Examples of the vent valve include a wing vent valve and a vortex vent valve.
    Type: Application
    Filed: June 22, 2020
    Publication date: October 8, 2020
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Chun Yin Tsai
  • Patent number: 10715924
    Abstract: A MEMS microphone includes a backplate that has a plurality of open areas, and a diaphragm spaced apart from the backplate. The diaphragm is deformable by sound waves to cause gaps between the backplate and the diaphragm being changed at multiple locations on the diaphragm. The diaphragm includes a plurality of anchor areas, located near a boundary of the diaphragm, which is fixed relative to the backplate. The diaphragm also includes multiple vent valves. Examples of the vent valve include a wing vent valve and a vortex vent valve.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: July 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Chun Yin Tsai
  • Publication number: 20200213701
    Abstract: An integrated microphone device is provided. The integrated microphone device includes a substrate, a plate, and a membrane. The substrate includes an aperture allowing acoustic pressure to pass through. The plate is disposed on a side of the substrate. The membrane is disposed between the substrate and the plate and movable relative to the plate as acoustic pressure strikes the membrane. The membrane includes a vent valve having an open area that is variable in response to a change in acoustic pressure.
    Type: Application
    Filed: March 10, 2020
    Publication date: July 2, 2020
    Inventors: Chun-Wen CHENG, Chia-Hua CHU, Chun-Yin TSAI, Tzu-Heng WU, Wen-Cheng KUO
  • Publication number: 20200140259
    Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a first dielectric layer over a substrate and forming a first recess in the first dielectric layer. The method also includes conformally forming a first movable membrane over the first dielectric layer. In addition, the first movable membrane has a first corrugated portion in the first recess. The method further includes forming a second dielectric layer over the first movable membrane and partially removing the substrate, the first dielectric layer, and the second dielectric layer to form a cavity. In addition, the first corrugated portion of the first movable membrane is partially sandwiched between the first dielectric layer and the second dielectric layer.
    Type: Application
    Filed: December 31, 2019
    Publication date: May 7, 2020
    Inventors: Yi-Chuan Teng, Chun-Yin Tsai, Chia-Hua Chu, Chun-Wen Cheng
  • Patent number: 10609463
    Abstract: An integrated microphone device is provided. The integrated microphone device includes a substrate, a plate, and a membrane. The substrate includes an aperture allowing acoustic pressure to pass through. The plate is disposed on a side of the substrate. The membrane is disposed between the substrate and the plate and movable relative to the plate as acoustic pressure strikes the membrane. The membrane includes a vent valve having an open area that is variable in response to a change in acoustic pressure.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: March 31, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Wen Cheng, Wen-Cheng Kuo, Chia-Hua Chu, Chun-Yin Tsai, Tzu-Heng Wu
  • Patent number: 10526196
    Abstract: Structures and formation methods of a semiconductor device structure are provided. A semiconductor device structure includes a first dielectric layer and a second dielectric layer over a semiconductor substrate. A cavity penetrates through the first dielectric layer and the second dielectric layer. The semiconductor device structure also includes a first movable membrane between the first dielectric layer and the second dielectric layer. The first movable membrane is partially exposed through the cavity. The first movable membrane includes first corrugated portions arranged along an edge of the cavity.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: January 7, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Chuan Teng, Chun-Yin Tsai, Chia-Hua Chu, Chun-Wen Cheng