Patents by Inventor Chun-Yin Tsai
Chun-Yin Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240115151Abstract: A physiological signal measurement system, a physiological signal measurement method, and a mobile device protective case are provided. The physiological signal measurement system includes a first electrode, a second electrode, a reference electrode, an impedance front-end circuit module and a dynamic signal matching module. The first electrode, the second electrode and the reference electrode are used to obtain a first sensing signal and a second sensing signal. The impedance front-end circuit module is used to detect a first impedance of the first electrode and a second impedance of the second electrode, and obtain an original differential signal according to the first sensing signal and the second sensing signal. The dynamic signal matching module is used to obtain a calibration sequence according to the first impedance, the second impedance and the original differential signal, and obtain a compensated calibration sequence according to the calibration sequence and the original differential signal.Type: ApplicationFiled: October 5, 2023Publication date: April 11, 2024Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yun-Yi HUANG, Yu-Chiao TSAI, Chun LIU, Heng-Yin CHEN
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Publication number: 20230382716Abstract: Various embodiments of the present disclosure are directed towards an electronic device that comprises a semiconductor substrate having a first surface opposite a second surface. The semiconductor substrate at least partially defines a cavity. A first microelectromechanical systems (MEMS) device is disposed along the first surface of the semiconductor substrate. The first MEMS device comprises a first backplate and a diaphragm vertically separated from the first backplate. A second MEMS device is disposed along the first surface of the semiconductor substrate. The second MEMS device comprises spring structures and a moveable element. The spring structures are configured to suspend the moveable element in the cavity. A segment of the semiconductor substrate continuously laterally extends from under a sidewall of the first MEMS device to under a sidewall of the second MEMS device.Type: ApplicationFiled: August 9, 2023Publication date: November 30, 2023Inventors: Chun-Wen Cheng, Chia-Hua Chu, Chun Yin Tsai, Wen Cheng Kuo
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Publication number: 20230370783Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate; and a membrane over the substrate and configured to generate charges in response to an acoustic wave, the membrane being in a polygonal shape including vertices. The membrane includes a via pattern includes: first lines that partition the membrane into slices and extend to the vertices of the membrane such that the slices are separated from each other near an anchored region of the membrane and connected to each other around a central region; and second lines extending from the anchored region of the membrane toward the central region of the membrane, each of the first lines or each of the second lines including non-straight lines.Type: ApplicationFiled: July 21, 2023Publication date: November 16, 2023Inventors: CHUN-WEN CHENG, CHUN YIN TSAI, CHIA-HUA CHU
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Patent number: 11750980Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate; and a membrane over the substrate and configured to generate charges in response to an acoustic wave, the membrane being in a polygonal shape including vertices. The membrane includes a via pattern having first lines that partition the membrane into slices and extend to the vertices of the membrane such that the slices are separated from each other near an anchored region of the membrane and connected to each other around a central region. The via pattern further includes second lines extending from the anchored region of the membrane toward the central region of the membrane. Each of the second lines includes a length less than a length of each of the first lines.Type: GrantFiled: July 27, 2022Date of Patent: September 5, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chun-Wen Cheng, Chun Yin Tsai, Chia-Hua Chu
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Patent number: 11581476Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a first piezoelectric layer, and a first dummy layer. The first piezoelectric layer is over the substrate, and the first piezoelectric layer has a first top surface. The first dummy layer is over the first piezoelectric layer, and the first dummy layer has a second top surface. And an average roughness of the first top surface is greater than an average roughness of the second top surface. A method for manufacturing the semiconductor structure is also provided.Type: GrantFiled: March 13, 2020Date of Patent: February 14, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chun-Wen Cheng, Chun Yin Tsai, Chia-Hua Chu
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Publication number: 20220369041Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate; and a membrane over the substrate and configured to generate charges in response to an acoustic wave, the membrane being in a polygonal shape including vertices. The membrane includes a via pattern having first lines that partition the membrane into slices and extend to the vertices of the membrane such that the slices are separated from each other near an anchored region of the membrane and connected to each other around a central region. The via pattern further includes second lines extending from the anchored region of the membrane toward the central region of the membrane. Each of the second lines includes a length less than a length of each of the first lines.Type: ApplicationFiled: July 27, 2022Publication date: November 17, 2022Inventors: CHUN-WEN CHENG, CHUN YIN TSAI, CHIA-HUA CHU
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Publication number: 20220289556Abstract: Various embodiments of the present disclosure are directed towards an electronic device that comprises a semiconductor substrate having a first surface opposite a second surface. The semiconductor substrate at least partially defines a cavity. A first microelectromechanical systems (MEMS) device is disposed along the first surface of the semiconductor substrate. The first MEMS device comprises a first backplate and a diaphragm vertically separated from the first backplate. A second MEMS device is disposed along the first surface of the semiconductor substrate. The second MEMS device comprises spring structures and a moveable element. The spring structures are configured to suspend the moveable element in the cavity. A segment of the semiconductor substrate continuously laterally extends from under a sidewall of the first MEMS device to under a sidewall of the second MEMS device.Type: ApplicationFiled: June 21, 2021Publication date: September 15, 2022Inventors: Chun-Wen Cheng, Chia-Hua Chu, Chun Yin Tsai, Wen Cheng Kuo
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Patent number: 11418887Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate and a membrane over the substrate. The membrane includes a piezoelectric material configured to generate charges in response to an acoustic wave. The membrane includes a via pattern having first lines that partition the membrane into slices such that the slices are separated from each other at a first region near an edge of the membrane and connected to each other at a second region.Type: GrantFiled: June 18, 2020Date of Patent: August 16, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chun-Wen Cheng, Chun Yin Tsai, Chia-Hua Chu
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Publication number: 20220227618Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a first dielectric layer formed over the substrate. The semiconductor device structure also includes a first movable membrane formed over the first dielectric layer. In addition, the first movable membrane has a first corrugated portion and a first edge portion connecting to the first corrugated portion. The semiconductor device structure further includes a second dielectric layer formed over the first movable membrane. In addition, the first edge portion is sandwiched between the first dielectric layer and the second dielectric layer, the first corrugated portion is partially sandwiched between the first dielectric layer and the second dielectric layer and is partially exposed by a cavity, and a bottom surface of the first corrugated portion is lower than a bottom surface of the first edge portion.Type: ApplicationFiled: April 1, 2022Publication date: July 21, 2022Inventors: Yi-Chuan TENG, Chun-Yin TSAI, Chia-Hua CHU, Chun-Wen CHENG
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Patent number: 11292712Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a first dielectric layer over a substrate and forming a first recess in the first dielectric layer. The method also includes conformally forming a first movable membrane over the first dielectric layer. In addition, the first movable membrane has a first corrugated portion in the first recess. The method further includes forming a second dielectric layer over the first movable membrane and partially removing the substrate, the first dielectric layer, and the second dielectric layer to form a cavity. In addition, the first corrugated portion of the first movable membrane is partially sandwiched between the first dielectric layer and the second dielectric layer.Type: GrantFiled: December 31, 2019Date of Patent: April 5, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Yi-Chuan Teng, Chun-Yin Tsai, Chia-Hua Chu, Chun-Wen Cheng
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Patent number: 11184694Abstract: An integrated microphone device is provided. The integrated microphone device includes a substrate, a plate, and a membrane. The substrate includes an aperture allowing acoustic pressure to pass through. The plate is disposed on a side of the substrate. The membrane is disposed between the substrate and the plate and movable relative to the plate as acoustic pressure strikes the membrane. The membrane includes a vent valve having an open area that is variable in response to a change in acoustic pressure.Type: GrantFiled: March 10, 2020Date of Patent: November 23, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Chun-Wen Cheng, Chia-Hua Chu, Chun-Yin Tsai, Tzu-Heng Wu, Wen-Cheng Kuo
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Patent number: 11089408Abstract: A MEMS microphone includes a backplate that has a plurality of open areas, and a diaphragm spaced apart from the backplate. The diaphragm is deformable by sound waves to cause gaps between the backplate and the diaphragm being changed at multiple locations on the diaphragm. The diaphragm includes a plurality of anchor areas, located near a boundary of the diaphragm, which is fixed relative to the backplate. The diaphragm also includes multiple vent valves. Examples of the vent valve include a wing vent valve and a vortex vent valve.Type: GrantFiled: June 22, 2020Date of Patent: August 10, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Wen Cheng, Chia-Hua Chu, Chun Yin Tsai
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Publication number: 20210098681Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a first piezoelectric layer, and a first dummy layer. The first piezoelectric layer is over the substrate, and the first piezoelectric layer has a first top surface. The first dummy layer is over the first piezoelectric layer, and the first dummy layer has a second top surface. And an average roughness of the first top surface is greater than an average roughness of the second top surface. A method for manufacturing the semiconductor structure is also provided.Type: ApplicationFiled: March 13, 2020Publication date: April 1, 2021Inventors: CHUN-WEN CHENG, CHUN YIN TSAI, CHIA-HUA CHU
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Publication number: 20210067880Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate and a membrane over the substrate. The membrane includes a piezoelectric material configured to generate charges in response to an acoustic wave. The membrane includes a via pattern having first lines that partition the membrane into slices such that the slices are separated from each other at a first region near an edge of the membrane and connected to each other at a second region.Type: ApplicationFiled: June 18, 2020Publication date: March 4, 2021Inventors: CHUN-WEN CHENG, CHUN YIN TSAI, CHIA-HUA CHU
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Publication number: 20200322733Abstract: AMEMS microphone includes a backplate that has a plurality of open areas, and a diaphragm spaced apart from the backplate. The diaphragm is deformable by sound waves to cause gaps between the backplate and the diaphragm being changed at multiple locations on the diaphragm. The diaphragm includes a plurality of anchor areas, located near a boundary of the diaphragm, which is fixed relative to the backplate. The diaphragm also includes multiple vent valves. Examples of the vent valve include a wing vent valve and a vortex vent valve.Type: ApplicationFiled: June 22, 2020Publication date: October 8, 2020Inventors: Chun-Wen Cheng, Chia-Hua Chu, Chun Yin Tsai
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Patent number: 10715924Abstract: A MEMS microphone includes a backplate that has a plurality of open areas, and a diaphragm spaced apart from the backplate. The diaphragm is deformable by sound waves to cause gaps between the backplate and the diaphragm being changed at multiple locations on the diaphragm. The diaphragm includes a plurality of anchor areas, located near a boundary of the diaphragm, which is fixed relative to the backplate. The diaphragm also includes multiple vent valves. Examples of the vent valve include a wing vent valve and a vortex vent valve.Type: GrantFiled: June 25, 2018Date of Patent: July 14, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Wen Cheng, Chia-Hua Chu, Chun Yin Tsai
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Publication number: 20200213701Abstract: An integrated microphone device is provided. The integrated microphone device includes a substrate, a plate, and a membrane. The substrate includes an aperture allowing acoustic pressure to pass through. The plate is disposed on a side of the substrate. The membrane is disposed between the substrate and the plate and movable relative to the plate as acoustic pressure strikes the membrane. The membrane includes a vent valve having an open area that is variable in response to a change in acoustic pressure.Type: ApplicationFiled: March 10, 2020Publication date: July 2, 2020Inventors: Chun-Wen CHENG, Chia-Hua CHU, Chun-Yin TSAI, Tzu-Heng WU, Wen-Cheng KUO
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Publication number: 20200140259Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a first dielectric layer over a substrate and forming a first recess in the first dielectric layer. The method also includes conformally forming a first movable membrane over the first dielectric layer. In addition, the first movable membrane has a first corrugated portion in the first recess. The method further includes forming a second dielectric layer over the first movable membrane and partially removing the substrate, the first dielectric layer, and the second dielectric layer to form a cavity. In addition, the first corrugated portion of the first movable membrane is partially sandwiched between the first dielectric layer and the second dielectric layer.Type: ApplicationFiled: December 31, 2019Publication date: May 7, 2020Inventors: Yi-Chuan Teng, Chun-Yin Tsai, Chia-Hua Chu, Chun-Wen Cheng
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Patent number: 10609463Abstract: An integrated microphone device is provided. The integrated microphone device includes a substrate, a plate, and a membrane. The substrate includes an aperture allowing acoustic pressure to pass through. The plate is disposed on a side of the substrate. The membrane is disposed between the substrate and the plate and movable relative to the plate as acoustic pressure strikes the membrane. The membrane includes a vent valve having an open area that is variable in response to a change in acoustic pressure.Type: GrantFiled: October 30, 2017Date of Patent: March 31, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Wen Cheng, Wen-Cheng Kuo, Chia-Hua Chu, Chun-Yin Tsai, Tzu-Heng Wu
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Patent number: 10526196Abstract: Structures and formation methods of a semiconductor device structure are provided. A semiconductor device structure includes a first dielectric layer and a second dielectric layer over a semiconductor substrate. A cavity penetrates through the first dielectric layer and the second dielectric layer. The semiconductor device structure also includes a first movable membrane between the first dielectric layer and the second dielectric layer. The first movable membrane is partially exposed through the cavity. The first movable membrane includes first corrugated portions arranged along an edge of the cavity.Type: GrantFiled: January 18, 2018Date of Patent: January 7, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yi-Chuan Teng, Chun-Yin Tsai, Chia-Hua Chu, Chun-Wen Cheng