Abstract: A MEMS microphone includes a backplate that has a plurality of open areas, and a diaphragm spaced apart from the backplate. The diaphragm is deformable by sound waves to cause gaps between the backplate and the diaphragm being changed at multiple locations on the diaphragm. The diaphragm includes a plurality of anchor areas, located near a boundary of the diaphragm, which is fixed relative to the backplate. The diaphragm also includes multiple vent valves. Examples of the vent valve include a wing vent valve and a vortex vent valve.

Abstract: Structures and formation methods of a semiconductor device structure are provided. A semiconductor device structure includes a first dielectric layer and a second dielectric layer over a semiconductor substrate. A cavity penetrates through the first dielectric layer and the second dielectric layer. The semiconductor device structure also includes a first movable membrane between the first dielectric layer and the second dielectric layer. The first movable membrane is partially exposed through the cavity. The first movable membrane includes first corrugated portions arranged along an edge of the cavity.

Abstract: An integrated microphone device is provided. The integrated microphone device includes a substrate, a plate, and a membrane. The substrate includes an aperture allowing acoustic pressure to pass through. The plate is disposed on a side of the substrate. The membrane is disposed between the substrate and the plate and movable relative to the plate as acoustic pressure strikes the membrane. The membrane includes a vent valve having an open area that is variable in response to a change in acoustic pressure.

Abstract: A light sensing device includes a substrate, a semiconductor device layer, a metal and insulation material stacked structure, and a light absorption layer. The substrate has a recessed portion. The semiconductor device layer is located on the substrate. The metal and insulation material stacked structure is located on the semiconductor device layer and includes a first interconnect structure, a second interconnect structure surrounding the first interconnect structure, and a device conductive line. The light absorption layer is located on the metal and insulation material stacked structure. The first interconnect structure is located between the light absorption layer and the semiconductor device layer, such that the light absorption layer and the semiconductor device layer located at different levels can be connected to each other and exchange heat.

Abstract: A micro-electromechanical apparatus includes a rotary element, at least one restraint and at least two folded springs. The rotary element is capable of rotating with respect to an axis. The folded springs are symmetrically disposed about the axis. Each folded spring has a moving end and a fixed end, the moving end is connected to the rotary element, and the fixed end is connected to the at least one restraint. The moving end is not located on the axis, and the fixed end is not located on the axis. A moving distance is defined as a distance between the moving end and the axis, a fixed distance is defined as a distance between the fixed end and the axis. A spring length is defined as a distance between the moving end and the fixed end. The spring length is varied according to the rotation of the rotary element.

Abstract: A light sensing device includes a substrate, a semiconductor device layer, a metal and insulation material stacked structure, and a light absorption layer. The substrate has a recessed portion. The semiconductor device layer is located on the substrate. The metal and insulation material stacked structure is located on the semiconductor device layer and includes a first interconnect structure, a second interconnect structure surrounding the first interconnect structure, and a device conductive line. The light absorption layer is located on the metal and insulation material stacked structure. The first interconnect structure is located between the light absorption layer and the semiconductor device layer, such that the light absorption layer and the semiconductor device layer located at different levels can be connected to each other and exchange heat.

Abstract: A micro-electromechanical apparatus includes a rotary element, at least one restraint and at least two folded springs. The rotary element is capable of rotating with respect to an axis. The folded springs are symmetrically disposed about the axis. Each folded spring has a moving end and a fixed end, the moving end is connected to the rotary element, and the fixed end is connected to the at least one restraint. The moving end is not located on the axis, and the fixed end is not located on the axis. A moving distance is defined as a distance between the moving end and the axis, a fixed distance is defined as a distance between the fixed end and the axis. A spring length is defined as a distance between the moving end and the fixed end. The spring length is varied according to the rotation of the rotary element.

Abstract: The disclosure provides a structure for a microelectromechanical system (MEMS)-based resonator device. The structure for the MEMS-based resonator device includes at least one resonator unit. The at least one resonator unit comprises a substrate having a trench therein. A pair of first electrodes is disposed on a pair of sidewalls of the trench. A piezoelectric material fills the trench, covering the pair of first electrodes. A second electrode is embedded in the piezoelectric material, separated from the pair of first electrodes by the piezoelectric material. The second electrode disposed in the trench is parallel to the pair of first electrodes.

Abstract: The disclosure provides a structure for a microelectromechanical system (MEMS)-based resonator device. The structure for the MEMS-based resonator device includes at least one resonator unit. The at least one resonator unit comprises a substrate having a trench therein. A pair of first electrodes is disposed on a pair of sidewalls of the trench. A piezoelectric material fills the trench, covering the pair of first electrodes. A second electrode is embedded in the piezoelectric material, separated from the pair of first electrodes by the piezoelectric material. The second electrode disposed in the trench is parallel to the pair of first electrodes.