Abstract: The present invention is directed to an interactive image device and interactive method thereof for a traditional photo frame or a fameless painting, the device comprises a frame body provided with a fastening position, a display surface for display an image, an effect unit for generate effects, a trigger unit and a circuit module to enable or disable the effect unit in responding the operation of the trigger unit by a user. The user is able to get different interactive effect feedbacks by inserting the trigger unit to the fastening position each time, thus the present invention can easily integrate the displayed image with interactive effects and interact with users by novel operating methods.

Abstract: A method of sparse digital cancellation of receiver nonlinear distortion in carrier aggregation systems is proposed. A reference signal generator generates possible candidate reference signals to be included in a dictionary matrix D. A sparsity-based solution is then applied to dynamically select reference signals based on the RF transceiver configuration. Based on the auto-correlation and cross-correlation with an observed radio signal, a subset of reference signals is selected from the dictionary matrix to match the distortion signal. The number of selected reference signals is flexibly determined based on the design constraints on complexity and power consumption. A greedy sparse estimation approaches, e.g., Orthogonal Matching Pursuit (OMP) can be used for reference signal selection. The reference signal selection is dynamic and adapts itself for different channel responses through correlating the observed radio signal with the dictionary reference signals.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes operations below. First, an epitaxial layer is formed on a substrate. Then, a trench is formed in the epitaxial layer. Then, a first dielectric layer and a shield layer are formed in the trench, in which the shield layer is embedded within the first dielectric layer. Then, a spacer layer is formed in the trench and on the first dielectric layer. Finally, a second dielectric layer and a gate are formed in the trench and on the spacer layer, and a source is formed in the epitaxial layer surrounding the trench, in which the gate is embedded within the second dielectric layer, and the source surrounds the gate.

Abstract: The present disclosure provides an upper for an article of footwear. The upper may include a knitted component having a first yarn and a second yarn, where the first yarn comprises a core with a sheath, the sheath being formed of a thermoplastic material having a melting temperature. The second yarn may be substantially free of the thermoplastic material. The knitted component may further comprise a first layer having a first surface and a second layer having a second surface, where the first layer and the second layer are secured via a knit structure of the knitted component, and where the knitted component further comprises a first region and a second region.

Abstract: A power supply includes a housing having a compartment. An electric motor includes a fixed seat fixed to a first end wall of the housing and located in the compartment. The electric motor further includes a shaft rotatably mounted to the fixed seat. The electric motor further includes a first stator fixed on the fixed seat and a first rotor fixed to the shaft. A first fan is fixed to the shaft. A generator is concentrically mounted around the electric motor. The generator includes a second stator fixed to the fixed seat and a second rotor rotatably mounted to the shaft and concentric to the second stator. A second fan is fixed around the second rotor. The first and second fans are coaxial and adjacent to each other. A power device is mounted to the housing and is electrically connected to the generator and the electric motor.

Abstract: A termination structure of a semiconductor device is provided. The semiconductor device includes an active area and a termination area adjacent to the active area, in which the termination area has the termination structure. The termination structure includes a substrate, an epitaxy layer, a dielectric layer, a conductive material layer and a conductive layer. The epitaxy layer is disposed on the substrate and has a voltage-sustaining region. The voltage-sustaining region has trenches parallel to each other. The dielectric layer is disposed in the trenches and on a portion of the epitaxy layer. The conductive material layer is disposed on the dielectric layer in the trenches. The conductive layer covers the trenches, and is in contact with the conductive material layer and a portion of the epitaxy layer, and is electrically connected between the active area and the termination area. A method for manufacturing the termination structure is also provided.

Abstract: A method for manufacturing a photomask is provided. The method includes providing a flexible substrate, forming a plurality of microstructures on the flexible substrate, coating the flexible substrate with a shading material to form a shading layer on the substrate, and solidifying the shading layer which is a single layer.

Abstract: Among other things, one or more image sensors and techniques for forming such image sensors are provided. An image sensor comprises a photodiode array configured to detect light. A filler grid is formed over the photodiode array, such as over a dielectric grid. The filler grid comprises one or more filler structures, such as a first filler structure that provides a light propagation path to a first photodiode that is primarily through the first filler structure. In this way, signal strength decay of light along the light propagation path before detection by the first photodiode is mitigated. The image sensor comprises a reflective layer that channels light towards corresponding photodiodes. For example, a first reflective layer portion guides light towards the first photodiode and away from a second photodiode. In this way, crosstalk, otherwise resulting from detection of light by incorrect photodiodes, is mitigated.

Abstract: A system for operating a portable communication device includes a module to operate the portable communication device in a first mode. The system may provide telephony service to a user at a first performance level. The system may determine to operate the portable communication device in a power-save mode that is different from the first mode. The system may operate the portable communication device in the power-save mode and provide telephony service to the user at a second performance level different from the first performance level.

Abstract: The present disclosure relates to a transistor device having a channel region comprising a sandwich film stack with a plurality of different layers that improve device performance, and an associated apparatus. In some embodiments, the transistor device has a source region and a drain region disposed within a semiconductor substrate. A sandwich film stack is laterally positioned between the source region and the drain region. The sandwich film stack has a lower layer, a middle layer of a carbon doped semiconductor material disposed over the lower layer, and an upper layer disposed over the middle layer. A gate structure is disposed over the sandwich film stack. The gate structure is configured to control a flow of charge carriers in a channel region located between the source region and the drain region.

Abstract: A termination structure of a semiconductor device is provided. The semiconductor device includes an active area and a termination area adjacent to the active area, in which the termination area has the termination structure. The termination structure includes a substrate, an epitaxy layer, a dielectric layer, a conductive material layer and a conductive layer. The epitaxy layer is disposed on the substrate and has a voltage-sustaining region. The voltage-sustaining region has trenches parallel to each other. The dielectric layer is disposed in the trenches and on a portion of the epitaxy layer. The conductive material layer is disposed on the dielectric layer in the trenches. The conductive layer covers the trenches, and is in contact with the conductive material layer and a portion of the epitaxy layer, and is electrically connected between the active area and the termination area. A method for manufacturing the termination structure is also provided.

Abstract: A method of manufacturing super junction device includes forming a first epitaxial layer on a semiconductor substrate. The first epitaxial layer is patterned to form a trench. The trench has a first sidewall region, a second sidewall region and a bottom region. The bottom region is positioned in between the first and second sidewall regions. A second epitaxial layer is formed on the first sidewall region, the second sidewall region and the bottom region. A portion of the second epitaxial layer on the first sidewall region and the second sidewall region is removed. An oxide layer in contact with the second epitaxial layer is formed. A gate layer in contact with the oxide layer is formed.

Abstract: Among other things, one or more image sensors and techniques for forming such image sensors are provided. An image sensor comprises a photodiode array configured to detect light. A filler grid is formed over the photodiode array, such as over a dielectric grid. The filler grid comprises one or more filler structures, such as a first filler structure that provides a light propagation path to a first photodiode that is primarily through the first filler structure. In this way, signal strength decay of light along the light propagation path before detection by the first photodiode is mitigated. The image sensor comprises a reflective layer that channels light towards corresponding photodiodes. For example, a first reflective layer portion guides light towards the first photodiode and away from a second photodiode. In this way, crosstalk, otherwise resulting from detection of light by incorrect photodiodes, is mitigated.

Abstract: A termination structure of a semiconductor device is provided. The semiconductor device includes an active area and a termination area adjacent to the active area, in which the termination area has the termination structure. The termination structure includes a substrate, an epitaxy layer, a dielectric layer, a conductive material layer and a conductive layer. The epitaxy layer is disposed on the substrate and has a voltage-sustaining region. The voltage-sustaining region has trenches parallel to each other. The dielectric layer is disposed in the trenches and on a portion of the epitaxy layer. The conductive material layer is disposed on the dielectric layer in the trenches. The conductive layer covers the trenches, and is in contact with the conductive material layer and a portion of the epitaxy layer, and is electrically connected between the active area and the termination area. A method for manufacturing the termination structure is also provided.

Abstract: The present invention is directed to an interactive image device and interactive method thereof for a traditional photo frame or a fameless painting, the device comprises a frame body provided with a fastening position, a display surface for display an image, an effect unit for generate effects, a trigger unit and a circuit module to enable or disable the effect unit in responding the operation of the trigger unit by a user. The user is able to get different interactive effect feedbacks by inserting the trigger unit to the fastening position each time, thus the present invention can easily integrate the displayed image with interactive effects and interact with users by novel operating methods.

Abstract: A global server load balancing (GSLB) switch serves as a proxy to an authoritative DNS communicates with numerous site switches which are coupled to host servers serving specific applications. The GSLB switch receives from site switches operational information regarding host servers within the site switches neighborhood. When a client program requests a resolution of a host name, the GSLB switch, acting as a proxy of an authoritative DNS, returns one or more ordered IP addresses for the host name. The IP addresses are ordered using metrics that include the information collected from the site switches. In one instance, the GSLB switch places the address that is deemed “best” at the top of the list.

Abstract: The present disclosure relates to a method of forming a transistor device having a channel region comprising a sandwich film stack with a plurality of different layers that improve device performance, and an associated apparatus. In some embodiments, the method is performed by selectively etching a semiconductor substrate to form a recess along a top surface of the semiconductor substrate. A sandwich film stack having a plurality of nested layers is formed within the recess. At least two of the nested layers include different materials that improve different aspects of the performance of the transistor device. A gate structure is formed over the sandwich film stack. The gate structure controls the flow of charge carriers in a channel region having the sandwich film stack, which is laterally positioned between a source region and a drain region disposed within the semiconductor substrate.

Abstract: A method for determining travel time of a vehicle on a road, wherein the vehicle is operable within a mobile communication network, comprising: collecting historical communication events of a mobile user in order to obtain travel samples, wherein the historical communication events indicate when the mobile user travelled along a monitored road; determining a cell handover sequence from the historical communication events; determining from the cell handover sequence, one of more road segments of the monitored road; determining the travel time of the one or more road segments according to the travel time samples; selecting, for an undetermined road segment of the monitored road for which the real-time travel time is not determined from the collected historical communication events, a candidate mobile user that is most likely to appear on the undetermined road segment; actively positioning the candidate mobile user to obtain positioning information; and returning to the step of collecting communication events of

Abstract: The present disclosure is directed to a system and method for adjusting a conversion speed of an asynchronous SAR ADC based on a margin of time between when a conversion of a sample of an analog signal completes and a next sample of the analog signal is taken, referred to as a “conversion time margin.” The system and method reduce the conversion speed of an asynchronous SAR ADC when the conversion time margin permits to reduce the amount of power consumed and/or noise produced by the asynchronous SAR ADC.