Patents by Inventor Chun-Yuan Lo

Chun-Yuan Lo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11164880
    Abstract: A multi-time programming non-volatile memory includes a select transistor, a floating gate transistor, a switch transistor, a capacitor and an erase gate element. The select transistor is connected with a select line and a source line. The floating gate transistor includes a floating gate. The floating gate transistor is connected with the select transistor. The switch transistor is connected with a word line, the floating gate transistor and a bit line. A first terminal of the capacitor is connected with the floating gate. A second terminal of the capacitor is connected with a control line. The erase gate element includes the floating gate, a gate oxide layer and a p-type region. The erase gate element is connected with an erase line. The floating gate of the erase gate element at least includes an n-type floating gate part.
    Type: Grant
    Filed: March 29, 2019
    Date of Patent: November 2, 2021
    Assignee: EMEMORY TECHNOLOGY INC.
    Inventors: Chun-Yuan Lo, Shih-Chen Wang, Wen-Hao Ching, Chih-Hsin Chen, Wei-Ren Chen
  • Publication number: 20210287746
    Abstract: A memory cell array of a multi-time programmable non-volatile memory includes plural memory cells. The memory cell has the structure of 1T1C cell, 2T1C cell or 3T1C cell. Moreover, the floating gate transistors of the memory cells in different rows of the memory cell array are constructed in the same well region. Consequently, the chip size is reduced. Moreover, by providing proper bias voltages to the memory cell array, the program action, the erase action or the read action can be performed normally.
    Type: Application
    Filed: February 24, 2021
    Publication date: September 16, 2021
    Inventors: Chih-Hsin CHEN, Chun-Yuan LO, Shih-Chen WANG, Tsung-Mu LAI
  • Publication number: 20210074855
    Abstract: A switch device includes a P-type substrate, a first gate structure, a first N-well, a shallow trench isolation structure, a first P-well, a second gate structure, a first N-type doped region, a second P-well, and a second N-type doped region. The first N-well is formed in the P-type substrate and partly under the first gate structure. The shallow trench isolation structure is formed in the first N-well and under the first gate structure. The first P-well is formed in the P-type substrate and under the first gate structure. The first N-type doped region is formed in the P-type substrate and between the first gate structure and the second gate structure. The second P-well is formed in the P-type substrate and under the second gate structure. The second N-type doped region is formed in the second P-well and partly under the second gate structure.
    Type: Application
    Filed: September 8, 2020
    Publication date: March 11, 2021
    Inventors: Chih-Hsin Chen, Shih-Chen Wang, Tsung-Mu Lai, Wen-Hao Ching, Chun-Yuan Lo, Wei-Chen Chang
  • Publication number: 20200006508
    Abstract: A multi-time programming non-volatile memory includes a select transistor, a floating gate transistor, a switch transistor, a capacitor and an erase gate element. The select transistor is connected with a select line and a source line. The floating gate transistor includes a floating gate. The floating gate transistor is connected with the select transistor. The switch transistor is connected with a word line, the floating gate transistor and a bit line. A first terminal of the capacitor is connected with the floating gate. A second terminal of the capacitor is connected with a control line. The erase gate element includes the floating gate, a gate oxide layer and a p-type region. The erase gate element is connected with an erase line. The floating gate of the erase gate element at least includes an n-type floating gate part.
    Type: Application
    Filed: March 29, 2019
    Publication date: January 2, 2020
    Inventors: Chun-Yuan LO, Shih-Chen WANG, Wen-Hao CHING, Chih-Hsin CHEN, Wei-Ren CHEN
  • Patent number: 10181342
    Abstract: A method for improving a program speed of a memory includes acquiring a program level of the memory, comparing the program level of the memory with a valid level and a target level for generating a comparison result, and entering a first loop and/or a second loop for setting a program voltage of the memory according to the comparison result.
    Type: Grant
    Filed: November 3, 2017
    Date of Patent: January 15, 2019
    Assignee: eMemory Technology Inc.
    Inventors: Chun-Yuan Lo, Shih-Chen Wang, Wen-Hao Ching, Chun-Chieh Chao
  • Publication number: 20180315462
    Abstract: A method for improving a program speed of a memory includes acquiring a program level of the memory, comparing the program level of the memory with a valid level and a target level for generating a comparison result, and entering a first loop and/or a second loop for setting a program voltage of the memory according to the comparison result.
    Type: Application
    Filed: November 3, 2017
    Publication date: November 1, 2018
    Inventors: Chun-Yuan Lo, Shih-Chen Wang, Wen-Hao Ching, Chun-Chieh Chao
  • Patent number: 9953685
    Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a substrate, a memory device, and a select transistor. The memory device is located on the substrate. The select transistor is located on the substrate and electrically connected to the memory device. The select transistor includes a select gate, a first dielectric layer, and a second dielectric layer. The select gate is located on the substrate. The first dielectric layer is adjacent to the second dielectric layer, and located between the select gate and the substrate. The first dielectric layer is closer to the memory device than the second dielectric layer. The thickness of the first dielectric layer is greater than the thickness of the second dielectric layer.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: April 24, 2018
    Assignee: eMemory Technology Inc.
    Inventors: Jui-Ming Kuo, Chun-Yuan Lo, Chia-Jung Hsu, Wein-Town Sun
  • Patent number: 9792993
    Abstract: A memory cell includes a read transistor, a first floating gate transistor, a program transistor, a second floating gate transistor, and a common floating gate. The common floating gate is coupled to the second floating gate transistor and the first floating gate transistor. The memory cell is programmed and erased through the common floating gate on the second floating gate transistor, and is read through the first floating gate transistor and the read transistor.
    Type: Grant
    Filed: January 16, 2017
    Date of Patent: October 17, 2017
    Assignee: eMemory Technology Inc.
    Inventors: Chun-Yuan Lo, Shih-Chen Wang, Wen-Hao Ching
  • Publication number: 20170206969
    Abstract: A memory cell includes a read transistor, a first floating gate transistor, a program transistor, a second floating gate transistor, and a common floating gate. The common floating gate is coupled to the second floating gate transistor and the first floating gate transistor. The memory cell is programmed and erased through the common floating gate on the second floating gate transistor, and is read through the first floating gate transistor and the read transistor.
    Type: Application
    Filed: January 16, 2017
    Publication date: July 20, 2017
    Inventors: Chun-Yuan Lo, Shih-Chen Wang, Wen-Hao Ching
  • Patent number: 9653173
    Abstract: A memory cell includes a coupling device, a read transistor, a first read selection transistor, a second read selection transistor, an erase device, a program transistor, and a program selection transistor. The coupling device is formed on a first doped region. The erase device is formed on a second doped region. The read transistor, the first read selection transistor, the second read selection transistor, the program transistor, and the program selection transistor are formed on a third doped region. A gate terminal of the coupling device is coupled to a common floating gate. A gate terminal of the erase device is coupled to the floating gate. During a program operation, electrical charges are moved from the common floating gate. During an erase operation, electrical charges are ejected from the common floating gate to the erase device.
    Type: Grant
    Filed: December 4, 2016
    Date of Patent: May 16, 2017
    Assignee: eMemory Technology Inc.
    Inventors: Chun-Yuan Lo, Wei-Chen Chang, Shih-Chen Wang
  • Patent number: 9484094
    Abstract: A control method of a resistive random-access memory is provided. Firstly, an action is performed on the resistive random-access memory, so that the resistive random-access memory has a specified state. Then, an operation period begins. During a first sub-period of the operation period, a first control signal with a first polarity is provided. During a second sub-period of the operation period, a second control signal with a second polarity is provided. During a third sub-period of the operation period, a third control signal with the first polarity is provided. During a fourth sub-period of the operation period, a read signal is provided, so that the resistive random-access memory generates a read current. According to the read current, a controlling circuit verifies whether the resistive random-access memory is in the specified state.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: November 1, 2016
    Assignee: EMEMORY TECHNOLOGY INC.
    Inventors: Chia-Jung Hsu, Wein-Town Sun, Chun-Yuan Lo
  • Patent number: 9424939
    Abstract: The invention provides a non-volatile memory apparatus and an erasing method thereof. The non-volatile memory apparatus includes a plurality of memory sectors and a control voltage provider. The memory sectors disposed in a same well, wherein, each of the memory sectors includes a plurality of memory cells for respectively receiving a plurality of control line signals. The control voltage provider provides the control line signals to the memory cells of each of the first memory sectors. When an erasing operation is operated, one of the memory sectors is selected for erasing and the control voltage provider provides the control line signals of the selected memory sector with an erase control voltage and provides the control line signals of the un-selected memory sectors with a un-erase control voltage, voltage levels of the erase control voltage and the un-erase control voltage are different.
    Type: Grant
    Filed: October 23, 2015
    Date of Patent: August 23, 2016
    Assignee: eMemory Technology Inc.
    Inventors: Yu-Hsiung Tsai, Chun-Yuan Lo
  • Publication number: 20160211020
    Abstract: A control method of a resistive random-access memory is provided. Firstly, an action is performed on the resistive random-access memory, so that the resistive random-access memory has a specified state. Then, an operation period begins. During a first sub-period of the operation period, a first control signal with a first polarity is provided. During a second sub-period of the operation period, a second control signal with a second polarity is provided. During a third sub-period of the operation period, a third control signal with the first polarity is provided. During a fourth sub-period of the operation period, a read signal is provided, so that the resistive random-access memory generates a read current. According to the read current, a controlling circuit verifies whether the resistive random-access memory is in the specified state.
    Type: Application
    Filed: October 1, 2015
    Publication date: July 21, 2016
    Inventors: Chia-Jung Hsu, Wein-Town Sun, Chun-Yuan Lo
  • Publication number: 20160148686
    Abstract: A memory cell array includes a first bit line, a first word line, a first source line pair and a first memory cell. A select terminal of the first memory cell is connected with the first word line. A first control terminal of the first memory cell is connected with a first source line of the first source line pair. A second control terminal of the first memory cell is connected with a second source line of the first source line pair. A third control terminal of the first memory cell is connected with the first bit line.
    Type: Application
    Filed: October 7, 2015
    Publication date: May 26, 2016
    Inventors: Chia-Jung Hsu, Wein-Town Sun, Ching-Sung Yang, Chi-Yi Shao, Chun-Yuan Lo, Yu-Hsiung Tsai, Ching-Yuan Lin
  • Publication number: 20160042795
    Abstract: The invention provides a non-volatile memory apparatus and an erasing method thereof. The non-volatile memory apparatus includes a plurality of memory sectors and a control voltage provider. The memory sectors disposed in a same well, wherein, each of the memory sectors includes a plurality of memory cells for respectively receiving a plurality of control line signals. The control voltage provider provides the control line signals to the memory cells of each of the first memory sectors. When an erasing operation is operated, one of the memory sectors is selected for erasing and the control voltage provider provides the control line signals of the selected memory sector with an erase control voltage and provides the control line signals of the un-selected memory sectors with a un-erase control voltage, voltage levels of the erase control voltage and the un-erase control voltage are different.
    Type: Application
    Filed: October 23, 2015
    Publication date: February 11, 2016
    Inventors: Yu-Hsiung Tsai, Chun-Yuan Lo
  • Patent number: 9196367
    Abstract: The invention provides a non-volatile memory apparatus and an erasing method thereof. The non-volatile memory apparatus includes a plurality of memory sectors and a control voltage provider. The memory sectors disposed in a same well, wherein, each of the memory sectors includes a plurality of memory cells for respectively receiving a plurality of control line signals. The control voltage provider provides the control line signals to the memory cells of each of the first memory sectors. When an erasing operation is operated, one of the memory sectors is selected for erasing and the control voltage provider provides the control line signals of the selected memory sector with an erase control voltage and provides the control line signals of the un-selected memory sectors with a un-erase control voltage, voltage levels of the erase control voltage and the un-erase control voltage are different.
    Type: Grant
    Filed: June 4, 2014
    Date of Patent: November 24, 2015
    Assignee: eMemory Technology Inc.
    Inventors: Yu-Hsiung Tsai, Chun-Yuan Lo
  • Publication number: 20150287467
    Abstract: The invention provides a non-volatile memory apparatus and an erasing method thereof The non-volatile memory apparatus includes a plurality of memory sectors and a control voltage provider. The memory sectors disposed in a same well, wherein, each of the memory sectors includes a plurality of memory cells for respectively receiving a plurality of control line signals. The control voltage provider provides the control line signals to the memory cells of each of the first memory sectors. When an erasing operation is operated, one of the memory sectors is selected for erasing and the control voltage provider provides the control line signals of the selected memory sector with an erase control voltage and provides the control line signals of the un-selected memory sectors with a un-erase control voltage, voltage levels of the erase control voltage and the un-erase control voltage are different.
    Type: Application
    Filed: June 4, 2014
    Publication date: October 8, 2015
    Applicant: eMemory Technology Inc.
    Inventors: Yu-Hsiung Tsai, Chun-Yuan Lo
  • Publication number: 20150287738
    Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a substrate, a memory device, and a select transistor. The memory device is located on the substrate. The select transistor is located on the substrate and electrically connected to the memory device. The select transistor includes a select gate, a first dielectric layer, and a second dielectric layer. The select gate is located on the substrate. The first dielectric layer is adjacent to the second dielectric layer, and located between the select gate and the substrate. The first dielectric layer is closer to the memory device than the second dielectric layer. The thickness of the first dielectric layer is greater than the thickness of the second dielectric layer.
    Type: Application
    Filed: September 5, 2014
    Publication date: October 8, 2015
    Inventors: Jui-Ming Kuo, Chun-Yuan Lo, Chia-Jung Hsu, Wein-Town Sun
  • Patent number: 8927370
    Abstract: A method for fabrication a memory having a memory area and a periphery area is provided. The method includes forming a gate insulating layer over a substrate in the periphery area. Thereafter, a first conductive layer is formed in the memory area, followed by forming a buried diffusion region in the substrate adjacent to the sides of the first conductive layer. An inter-gate dielectric layer is then formed over the first conductive layer followed by forming a second conductive layer over the inter-gate dielectric layer. A transistor gate is subsequently formed over the gate insulating layer in the periphery area.
    Type: Grant
    Filed: July 24, 2006
    Date of Patent: January 6, 2015
    Assignee: MACRONIX International Co., Ltd.
    Inventors: Chun-Yuan Lo, Chun-Pei Wu
  • Patent number: 8526240
    Abstract: A programming method includes the following steps. A preset programming voltage is applied to a memory cell to program the memory cell. A first verify voltage is applied to the memory cell to detect a programming result of the memory cell. A programming voltage applied on the memory cell is adjusted according to the programming result of the memory cell. A flash memory is also provided.
    Type: Grant
    Filed: August 17, 2011
    Date of Patent: September 3, 2013
    Assignee: eMemory Technology Inc.
    Inventors: Chun-Yuan Lo, Wein-Town Sun