Abstract: A gate driver includes: a signal generator configured to generate a gate signal, and output the gate signal to a first output terminal; and an inverted signal generator configured to generate an inverted gate signal based on the gate signal, and output the inverted gate signal to a second output terminal, wherein the inverted signal generator includes: a first transistor connected between a first node connected to the second output terminal and a first driving power supply terminal, and including a PMOS transistor; and a second transistor connected between the first node and a second driving power supply terminal, and including an NMOS transistor, and wherein a second node connected to the first output terminal is connected to a gate electrode of each of the first and second transistors.

Abstract: A multilayer capacitor includes a body including dielectric layers and internal electrodes and external electrodes disposed on an external surface of the body and connected to the internal electrodes. The body includes a first surface and a second surface to which the internal electrodes are exposed, the first surface and the second surface opposing each other in a first direction, a third surface and a fourth surface opposing each other in a second direction which is a direction in which the dielectric layers are stacked, and a fifth surface and a sixth surface opposing each other in a third direction. At least one of the internal electrodes include a first bottleneck structure having a first directional length of a third-directional outer region smaller than an inner region thereof and a second bottleneck structure having a third directional length of a first directional outer region smaller than an inner region thereof.

Abstract: The present disclosure provides a silicon carbide (SiC) opto-thyristor and a method for manufacturing the same. The SiC opto-thyristor includes a SiC substrate, a SiC light emitter and a SiC light-sensitive thyristor. In the method, a SiC epitaxy is mainly formed on the SiC substrate with the doped P-type and N-type semiconductor materials to define the regions for forming the SiC light emitter and the basic structures of the SiC light-sensitive thyristor. A passivation layer is deposited. Conducting channels for the SiC light emitter and the SiC light-sensitive thyristor are formed by an etching process. After patterning a metal conductor layer, a structure of electrical contacts of the SiC light emitter and the SiC light-sensitive thyristor is formed. Then, terminals of an input voltage and an output voltage of the silicon carbide opto-thyristor are formed after a wire bonding process upon the electrical contacts. Finally, a packaging process is performed.

Abstract: A display panel includes first and second pixels each including a light emitting device including a first electrode and a second electrode and a transistor electrically connected to the second electrode, a first insulating layer disposed on the transistor of each of the first and second pixels, a conductive pattern disposed on the first insulating layer and including a first pattern corresponding to the first pixel and a second pattern corresponding to the second pixel and spaced apart from the first pattern, and a separator disposed between the first pattern and the second pattern and contacting a portion of the first insulating layer, which is exposed and not covered by the first and second patterns, to separate the second electrode of the first pixel from the second electrode of the second pixel.

Abstract: A display panel includes a base layer including a first display region, a second display region adjacent to the first display region, and a non-display region adjacent to the first display region and the second display region, a demultiplexer circuit overlapping the second display region, a first pixel including a first pixel driver overlapping the first display region, and a first light emitting element overlapping the first display region and electrically connected with the first pixel driver, and a second pixel including a second pixel driver overlapping the first display region, and a second light emitting element and a third light emitting element that are electrically connected with the second pixel driver. At least one of the second light emitting element and the third light emitting element overlaps the second display region and is disposed on the demultiplexer circuit.

Abstract: Examples disclosed herein relate to device. The device includes a substrate, a plurality of adjacent pixel-defining layer (PDL structures disposed over the substrate, and a plurality of sub-pixels. The PDL structure have a top surface coupled to adjacent sidewalls of the PDL structure. The plurality of sub-pixels are defined by the PDL structures. Each sub-pixel includes an anode, an organic light emitting diode (OLED), a cathode, and an encapsulation layer. The organic light emitting diode (OLED) material disposed over the anode. The OLED material extends over the top surface of the PDL structure past the adjacent sidewalls. The cathode is disposed over the OLED material. The cathode extends over the top surface of the PDL structure past the adjacent sidewalls. The encapsulation layer is disposed over the cathode. The encapsulation layer has a first sidewall and a second sidewall.

Abstract: A method of manufacturing a multilayer electronic component, the method includes, attaching a margin portion green sheet including a ceramic material, a photocuring agent, and a photoinitiator to at least one end surface of each of the plurality of cut ceramic green sheet stacked bodies in the third direction, an energy irradiation operation of irradiating, with energy, the margin portion green sheet to generate a photocuring polymerization reaction between the photocuring agent and the photoinitiator.

Abstract: A light-transmitting antenna includes a substrate, a first and a second conductive pattern. The first and the second conductive pattern is disposed on a first and a second surface of the substrate respectively. The first conductive pattern includes a first feeder unit, a first and a second radiation unit, a first and a second coupling unit and a first parasitic unit. The first feeder unit is connected to the second radiation unit. The first and the second radiation unit are located between the first and the second coupling unit. One side and the other side of the first parasitic unit is connected to the second coupling unit and adjacent to the first coupling unit respectively. The second conductive pattern includes a second feeder unit, a third coupling unit, a second parasitic unit, and a fourth coupling unit.

Abstract: A method is provided for forming an integrated circuit (IC) chip package structure. The method includes providing a substrate for an interposer, and forming a conductive interconnect structure in and on the substrate for connecting a group of selected IC dies. The method includes forming warpage-reducing trenches in non-routing regions of the interposer, wherein the warpage-reducing trenches are sized and positioned based on a warpage characteristic to reduce the warpage of the chip package structure. The method also includes depositing a warpage-relief material in the warpage-reducing trenches according to the warpage characteristic to reduce the warpage of the chip package structure, and bonding the group of selected IC dies to the interposer to form a chip package structure.

Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device includes forming nanowire structures stacked over a substrate and spaced apart from one another, and forming a dielectric material surrounding the nanowire structures. The dielectric material has a first nitrogen concentration. The method also includes treating the dielectric material to form a treated portion. The treated portion of the dielectric material has a second nitrogen concentration that is greater than the first nitrogen concentration. The method also includes removing the treating portion of the dielectric material, thereby remaining an untreated portion of the dielectric material as inner spacer layers; and forming the gate stack surrounding nanowire structures and between the inner spacer layers.

Abstract: A display panel includes first, second, and third emitting parts arranged along a first direction, first, second, and third transistors spaced apart from the first, second, and third emitting parts, and arranged along the first direction, and first, second, and third connection wirings each extending along the first direction and connecting the first, second, and third emitting parts to the first, second, and third transistors. The first, second, and third connection wirings include first, second, and third emission connection parts each connected to a corresponding emitting part, and first, second, and third driver connection parts each connected to a corresponding transistor. An arrangement order of the first, second, and third emission connection parts arranged in the first direction and an arrangement order of the first, second, and third driver connection parts arranged in the first direction are same as each other.

Abstract: A display device includes a display panel including a first region, a second region, and a third region. The display panel includes a plurality of light emitting devices disposed in the first electrode, and each including a first electrode, an intermediate layer disposed on the first electrode, and a second electrode disposed on the intermediate layer, a separator including a pixel boundary portion disposed in the first region, a peripheral partition portion disposed in the second region, and a peripheral boundary portion disposed in the first region and the third region, and a plurality conductive pattern layers disposed in the second region. A plurality of second electrodes of the plurality of light emitting devices are electrically separated by the pixel boundary portion, and the plurality of conductive pattern layers are electrically separated by the peripheral partition portion.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a first conductive structure over a substrate. A data storage structure overlies the first conductive structure. The data storage structure comprises a first dielectric layer on the first conductive structure and a second dielectric layer on the first dielectric layer. The first dielectric layer comprises a dielectric material and a first dopant having a concentration that changes from a top surface of the first dielectric layer in a direction towards the first conductive structure. A second conductive structure overlies the data storage structure.

Abstract: A display panel includes a transistor, a first insulation layer disposed on the transistor, a pixel definition layer disposed on the first insulation layer and having a light emitting opening and an opening pattern surrounding the light emitting opening, a light emitting element disposed on the first insulation layer and including a first electrode at least a portion of which is exposed by the light emitting opening and a second electrode which is electrically connected to the transistor, and a connection line disposed on the transistor and electrically connecting the transistor and the second electrode. A groove overlapping the opening pattern is defined in the first insulation layer, and a portion of the pixel definition layer protrudes from an edge of the first insulation layer defining the groove toward an inside of the opening pattern.

Abstract: Provided is a method for manufacturing a display panel, the method includes forming a driving element layer including a transistor and a first insulation layer on a base layer; forming a contact-hole partially exposing the transistor; and providing a connection wiring electrically connected to the transistor through the contact-hole on the first insulation layer. The method includes forming a first tip portion by performing a primary etching on the connection wiring; providing the first tip portion exposed by the first open region as a second preliminary tip portion; and forming a second tip portion by performing a secondary etching on the second preliminary tip portion.

Abstract: Disclosed is a display panel including a first emitting part and a second emitting part spaced apart from each other. Each of the first and second emitting parts includes an separator and at least one emitting part. The separator includes a first isolation portion. The first isolation portion includes first portions spaced apart from each other and second portions, each of the second portions is bent from each of the first portions and is disposed between adjacent ones of the first portions.

Abstract: A display panel includes a transistor, a light emitting device electrically connected to the transistor, a connection wiring electrically connecting the transistor to the light emitting device and including side surfaces, a capping pattern disposed on the transistor and contacting at least a side surface among side surfaces, an upper insulating layer disposed on the transistor and including a first opening that overlaps the at least the side surface, and a pixel definition layer disposed on the upper insulating layer and covering the first opening of the upper insulating layer.

Abstract: A display panel including a transistor, a light-emitting element including a first electrode, a light emitting layer disposed on the first electrode, and a second electrode disposed on the light emitting layer, the second electrode being electrically connected to the transistor, an insulating layer disposed between the transistor and the light-emitting element, and connection wiring.

Abstract: A multilayer structure, a capacitor structure and an electronic device are provided. The multilayer structure includes a first dielectric layer, a second dielectric layer and an intermediate dielectric layer. The intermediate dielectric layer is disposed between the first dielectric layer and the second dielectric layer. A material of the intermediate dielectric layer is represented by a formula of AxB1-xO, wherein A includes hafnium (Hf), zirconium (Zr), lanthanum (La) or tantalum (Ta), B includes lanthanum (La), aluminum (Al) or tantalum (Ta), A is different from B, O is oxygen, and x is a number less than 1 and greater than 0.

Abstract: A cosmetic container having a wiper capable of removing a cosmetic liquid from an application support rod having a non-circular cross-sectional area is proposed. The cosmetic container includes a container (110) in which the cosmetic liquid is accommodated, a container cap (120) opened/closed with respect to an injection port (112) of the container (110), and an application part (130) rotatably fitted and coupled to the container cap. The wiper (140) is coupled to an inner side of the injection port (112) of the container, a through-hole (144) of the cleaner part (142) is formed in a circular shape, the application part includes an application support rod (132) and an application member (134), an airtight recessed groove (133) is formed on an upper portion of the application support rod, and the application support rod extended from a lower portion of the airtight recessed groove has a non-circular cross-sectional area.