Abstract: Embodiments described herein relate to a sub-pixel. The sub-pixel includes an anode, overhang structures, separation structures, an organic light emitting diode (OLED) material, and a cathode. The anode is defined by adjacent first pixel isolation structures (PIS) and adjacent second PIS. The overhang structures are disposed on the first PIS. The overhang structures include a second structure disposed over the first structure and an intermediate structure disposed between the second structure and the first structure. A bottom surface of the second structure extends laterally past an upper surface of the first structure. The first structure is disposed over the first PIS. Separation structures are disposed over the second PIS. The OLED material is disposed over the anode and an upper surface of the separation structures. The cathode disposed over the OLED material and an upper surface of the separation structures.

Abstract: The present invention relates to a bi-specific antibody that specifically binds to alpha-synuclein and IGF1R, and an use of the bi-specific antibody for the prevention, treatment and/or diagnosis of synucleinopathies associated with alpha-synuclein or alpha-synuclein aggregates, and can allow the alpha-synuclein antibody or an antigen-binding fragment thereof to penetrate the blood brain barrier to exert its action in the brain, and extend the half-life to maintain the efficacy for a long time.

Abstract: A display device includes a display panel including pixels, a gate driver which sequentially applies scan signals to pixel rows including the pixels at a scan frequency, a data driver which applies data voltages to the pixels, a power voltage generator which applies a power voltage to the pixels, and a timing controller which sets a ripple frequency of the power voltage to deviate from the scan frequency by a predetermined reference ratio or more.

Abstract: An integrated circuit (IC) die includes first through third adjacent rows of through-silicon vias (TSVs), and first and second adjacent rows of memory macros. TSVs of the first row of TSVs extend through and are electrically isolated from memory macros of the first row of memory macros. TSVs of the third row of TSVs extend through and are electrically isolated from memory macros of the second row of memory macros.

Abstract: Described are anti-doppel antibody-drug conjugates, compositions comprising them, and related methods of treating doppel-associated diseases and conditions, including cancer.

Abstract: A method includes forming a fin structure over a substrate, wherein the fin structure comprises first semiconductor layers and second semiconductor layers alternately stacked over a substrate; forming a dummy gate structure over the fin structure; removing a portion of the fin structure uncovered by the dummy gate structure; performing a selective etching process to laterally recess the first semiconductor layers, including injecting a hydrogen-containing gas from a first gas source of a processing tool to the first semiconductor layers and the second semiconductor layers; and injecting an F2 gas from a second gas source of the processing tool to the first semiconductor layers and the second semiconductor layers; forming inner spacers on opposite end surfaces of the laterally recessed first semiconductor layers of the fin structure; and replacing the dummy gate structure and the first semiconductor layers with a metal gate structure.

Abstract: A base material is provided. A first patterned circuit layer and a second patterned circuit layer are formed on a first surface and a second surface of the base material. A first insulation layer and a metal reflection layer are provided on the first patterned circuit layer and a portion of the first surface exposed by the first patterned circuit layer, wherein the metal reflection layer covers the first insulation layer, and a reflectance of the metal reflection layer is substantially greater than or equal to 85%, there is no conductive material between the first patterned circuit layer and the metal reflection layer. A first ink layer is formed on the first insulation layer before the metal reflection layer is formed.

Abstract: Proposed is a stick type cosmetic container that includes a first holder for supporting the underside of a cosmetic material to allow the cosmetic material to move in upward and downward directions, a handle for controlling the upward and downward movements of the cosmetic material and having a first hollow portion formed at the inside thereof, an inner container located at the first hollow portion and thus rotatable with respect to the handle and having fixing and fastening grooves formed on the lower end periphery thereof and thus fixedly fastened to the handle whenever the inner container rotates once, and a second holder located inside the inner container to support the underside of the first holder.

Abstract: A headphone includes a headgear and two earmuffs connected to opposite ends of the headgear, and each of the earmuffs includes an adjustment assembly. The adjustment assembly includes a base, two elastic members, two protrusions, and two sliding blocks. The base has two opposite accommodating parts and two guiding grooves. The elastic members are disposed in the accommodating parts, respectively, and the elastic members extend along a first axial direction. The protrusions are slidably connected to the guiding grooves, respectively, and protrude into the accommodating parts. The sliding blocks are disposed in the accommodating parts, respectively, and each of the sliding blocks is respectively connected between the corresponding protrusion and the corresponding elastic member.

Abstract: The purpose of the present invention is to provide: a crosslinked hyaluronic acid hydrogel in which a crosslinking agent and a polyol are used to reduce toxicity during crosslinking, and thereby enhance safety while increasing persistence in the body; and a filler composition including the crosslinked hyaluronic acid hydrogel.

Abstract: A semiconductor structure includes a first gate structure, a second gate structure coupled to the first gate structure, a source region, a first drain region, and a second drain region. The source region is surrounded by the first gate structure and the second gate structure. The first drain region is separated from the source region by the first gate structure. The second drain region is separated from the source region by the second gat structure. A shape of the first drain region and a shape of the second drain region are different from each other from a plan view.

Abstract: Antibody-mediated rejection (ABMR) is one of the main obstacles to successful transplantation, including ABO blood group-incompatible (ABOi) transplantation. C4d deposition is a marker of ABMR and is also found in most ABOi allograft tissues. Described herein are anti-C4d CAR Tregs that suppress ABMR in ABOi allografts. Anti-C4d CAR Tregs prepared by retroviral transduction of CAR into CD62L +CD4 +CD25 +Tregs, expressed Foxp3, CD25, CTLA-4, LAP, and GITR to similar extents as non-transduced Tregs. Anti-C4d CAR Tregs were activated by specific binding to C4d and suppressed in vitro T cell proliferation as well as non-transduced Tregs. Furthermore, adoptive transfer of anti-C4d CAR Tregs significantly prolonged mouse ABOi heart allograft survival (P<0.05).

Abstract: The current disclosure describes techniques for forming a low resistance junction between a source/drain region and a nanowire channel region in a gate-all-around FET device. A semiconductor structure includes a substrate, multiple separate semiconductor nanowire strips vertically stacked over the substrate, a semiconductor epitaxy region adjacent to and laterally contacting each of the multiple separate semiconductor nanowire strips, a gate structure at least partially over the multiple separate semiconductor nanowire strips, and a dielectric structure laterally positioned between the semiconductor epitaxy region and the gate structure. The first dielectric structure has a hat-shaped profile.

Abstract: A multilayer electronic component includes: a body including dielectric layers and having first and second surfaces opposing each other in a first direction, third and fourth surfaces connected to the first and second surfaces and opposing each other in a second direction, and fifth and sixth surfaces connected to the first to fourth surfaces and opposing each other in a third direction; side margin portions disposed on the fifth and sixth surfaces, respectively; and external electrodes disposed on the third and fourth surfaces, respectively. The body includes an active portion including internal electrodes disposed alternately with the dielectric layers in the first direction, one of the internal electrodes includes a central portion and an interface portion disposed between the central portion and one of the dielectric layers, and the interface portion and one of the side margin portions include Sn.

Abstract: A UE for beam failure detection is provided. The UE includes a radio frequency (RF) signal processing device. The RF signal processing device receives a first candidate-beam reference-signal (RS) list and a second candidate-beam RS list and reports a beam failure information. The first candidate-beam RS list is associated with a first beam-failure-detection RS (BFD-RS) set and the second candidate-beam RS list is associated with a second BFD-RS set. The beam failure information includes at least one of following: at least on component carrier (CC) index, at least one new candidate beam, an identity of BFD-RS set, or an CORESETPoolIndex.

Abstract: The present application relates to a hybrid cord including a bio-based nylon primarily twisted yarn. According to the present application, while including a primarily twisted yarn including bio-based nylon having a higher modulus compared to chemical-based nylon, there is provided a hybrid cord and has elongation and fatigue resistance equivalent to or higher than commercially required levels (i.e., the level that the cord including a conventional chemical-based nylon primarily twisted yarn has).

Abstract: A processing method of a single crystal material includes the following steps. A single crystal material is provided as an object to be modified. The amorphous phase modification apparatus is used for emitting a femtosecond laser beam to process an internal portion of the object to be modified. The processing includes using a femtosecond laser beam to form a plurality of processing lines in the internal portion of the object to be modified, wherein each of the processing lines include a zigzag pattern processing, and a processing line spacing between the plurality of processing lines is in a range of 200 ?m to 600 ?m, wherein after the object to be modified is processed, a modified layer is formed in the object to be modified. Slicing or separating out a portion in the object to be modified that includes the modified layer.

Abstract: Provided is a gate driving circuit comprising an N-th stage and an N+1-th stage. The N-th stage outputs an N-th scan gate signal based on an N-th scan clock signal, a voltage of a QN node, and a voltage of a QBN node and to output an N-th carry signal based on an N-th carry clock signal, the voltage of the QN node, and the voltage of the QBN node. The N+1-th stage outputs an N+1-th scan gate signal based on an N+1-th scan clock signal, a voltage of a QN+1 node, and the voltage of the QBN node and an N+1-th carry signal based on an N+1-th carry clock signal, the voltage of the QN+1 node, and the voltage of the QBN node. The N-th stage and the N+1-th stage share an inverting circuit. The inverting circuit controls the QBN node based on a third signal. N is a positive integer.

Abstract: A multilayer ceramic capacitor includes a ceramic body having a dielectric layer, a plurality of internal electrodes disposed in the ceramic body, and a first side margin portion and a second side margin portion arranged on end portions of the internal electrodes exposed through respective opposing surfaces of the ceramic body. The ceramic body includes an active portion having the plurality of internal electrodes arranged to overlap each other with the dielectric layer interposed therebetween to form capacitance, and cover portions disposed above an uppermost and below a lowermost internal electrode of the active portion. The first and second side margin portions include tin (Sn), and a content of Sn included in the first and second side margin portions is greater than a content of Sn included in the dielectric layer of the active portion.