Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.

Abstract: Semiconductor devices and methods of manufacture are provided whereby fences are formed over a substrate and III-V materials are grown over the substrate, wherein the fences block growth of the III-V materials. As such, smaller areas of the III-V materials are grown, thereby preventing stresses that occur with the growth of larger sheets.

Abstract: An automated speech recognition (ASR) model includes a first encoder, a second encoder, and a decoder. The first encoder receives, as input, a sequence of acoustic frames, and generates, at each of a plurality of output steps, a first higher order feature representation for a corresponding acoustic frame in the sequence of acoustic frames. The second encoder receives, as input, the first higher order feature representation generated by the first encoder at each of the plurality of output steps, and generates, at each of the plurality of output steps, a second higher order feature representation for a corresponding first higher order feature frame. The decoder receives, as input, the second higher order feature representation generated by the second encoder at each of the plurality of output steps, and generates, at each of the plurality of time steps, a first probability distribution over possible speech recognition hypotheses.

Abstract: An optical structure is provided. The optical structure includes a substrate and a light-emitting element disposed on the substrate. The optical structure also includes a cap disposed on the substrate and covering the light-emitting element. The cap has a top portion and a sidewall connected to the top portion. The optical structure further includes a first micro-structure disposed on a first side of the top portion facing the light-emitting element. The first micro-structure is periodically arranged.

Abstract: A control system includes a plurality of pressure sensors, each to detect a pressure in a respective dynamic gas lock (DGL) nozzle control region of a plurality of DGL nozzle control regions. Each DGL nozzle control region includes one or more DGL nozzles. The control system includes a plurality of mass flow controllers (MFCs). Each MFC of the plurality of MFCs is to control a flow velocity in a respective DGL nozzle control region of the plurality of DGL nozzle control regions. The control system includes a controller to selectively cause one or more MFCs of the plurality of MFCs to adjust flow velocities in one or more DGL nozzle control regions of the plurality of DGL nozzle control regions based on pressures detected by the plurality of pressure sensors in DGL nozzle control regions of the plurality of DGL nozzle control regions.

Abstract: A memory device including a static random-access memory that includes two cross-coupled inverters and an access transistor having a gate connected to a word line. The memory device further includes one or more logic gates electrically coupled to the static random-access memory, and a non-volatile memory electrically coupled to the static random-access memory and configured to store data and be read using the static random-access memory, wherein the non-volatile memory is connected on one side to the access transistor and on another side to the two cross-coupled inverters.

Abstract: A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. At least the second layer is porous. The mask is formed by forming a multilayer reflective structure over the LTEM substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. A capping layer is formed over the multilayer reflective structure. An absorber layer is formed over the capping layer.

Abstract: A test wafer is placed inside a baking module and is baked. Via one or more temperature sensors, a cumulative heat amount delivered to the test wafer during the baking is measured. The measured cumulative heat amount is compared with a predefined cumulative heat amount threshold. In response to the comparing indicating that the measured cumulative heat amount is within the predefined cumulative heat amount threshold, it is determined that the baking module is qualified for actual semiconductor fabrication. In response to the comparing indicating that the measured cumulative heat amount is outside of the predefined cumulative heat amount threshold, it is determined that the baking module is not qualified for actual semiconductor fabrication.

Abstract: A method of manufacturing a semiconductor structure is provided by embodiments of this disclosure, and the method includes the following steps. An insulating area and an active area are formed in a substrate. A first word line trench is formed in the active are. A first dielectric layer is deposited in the first word line trench and on the active area and the insulating area. A second word line trench is formed through etching the first dielectric layer. Besides, the second word line trench is linear and extends through the insulating area and the active area of the substrate, and a portion of the first dielectric layer is remained in a bottom of the second word line trench. Then, a word line structure is formed in the second word line trench. Moreover, a semiconductor structure is provided in this disclosure.

Abstract: Systems and methods can utilize a conformer model to process a data set for various data processing tasks, including, but not limited to, speech recognition, sound separation, protein synthesis determination, video or other image set analysis, and natural language processing. The conformer model can use feed-forward blocks, a self-attention block, and a convolution block to process data to learn global interactions and relative-offset-based local correlations of the input data.

Abstract: A method includes irradiating a target droplet in an extreme ultraviolet (EUV) light source of an extreme ultraviolet lithography tool with non-ionizing light from a droplet illumination module. The method further includes detecting light reflected and/or scattered by the target droplet, and performing particle image velocimetry, based on the detected light, to determine a velocity of the target droplet. The method also includes adjusting a time delay between a generation of the target droplet and a generation of an excitation laser beam based on the velocity of the target droplet.

Abstract: A memory device including a static random-access memory that includes two cross-coupled inverters and an access transistor having a gate connected to a word line. The memory device further includes one or more logic gates electrically coupled to the static random-access memory, and a non-volatile memory electrically coupled to the static random-access memory and configured to store data and be read using the static random-access memory, wherein the non-volatile memory is connected on one side to the access transistor and on another side to the two cross-coupled inverters.

Abstract: An extreme ultraviolet (EUV) lithography system includes a vane bucket module. The vane bucket module includes a temperature adjusting pack and a collecting tank inserted into the temperature adjusting pack. The temperature adjusting pack has a plurality of inlets. The collecting tank has a cover and the cover includes a plurality of through holes. The inlets of the temperature adjusting pack are aligned with the through holes of the cover. Each through hole has a minimum depth at a first position and a maximum depth at a second position. The first position is closer to a center of the cover than the second position.

Abstract: A memory device includes RRAM memory cells configured to form a zero-transistor and one-resistor (0T1R) array structure in which access transistors of the RRAM memory cells are bypassed or removed. Alternatively, the access transistors of the RRAM memory cells may be arranged in a parallel structure to reduce associated IR drop and thus enable reduced write voltage operation.

Abstract: This document describes systems and techniques directed at a machine-learning-based greedy optimization mechanism for reducing radio-frequency (RF) tests in production. In aspects, a process capability index is disclosed, the process capability index used to refine a test-set. The test-set includes tests configured to be performed on an electronic device. The process capability index is configured based on upper specification limits and lower specification limits of the electronic device for each test in the test-set, as well as results for each of the tests in the test-set. The process capability index is further configured based on a new upper specification limit and a new lower specification limit of the electronic device for a new test not in the test-set, as well as results for the new test.

Abstract: A system is provided. The system includes an exposing device configured to generate a real-time image, including multiple first align marks, of a mask and an adjusting device configured to adjust an off-set of the mask from a pre-determined position to be smaller than a minimum aligning distance according to the first align marks and multiple align marks on a substrate, and further to move the mask closer to the pre-determined position to have a displacement, less than a minimum mapping distance, from the pre-determined position according to the real-time image and a reference image of the mask.

Abstract: A measurement pattern for monitoring overlay shift of bonded wafers includes a top wafer pattern and a bottom wafer pattern. The top wafer pattern includes a first portion with a width Wx1 measured along a first axis. The bottom wafer pattern includes a first part with a width Wx2 measured along the first axis, wherein the first portion of the top wafer pattern and the first part of the bottom wafer pattern are separated by a target distance Dx, and wherein the measurement pattern satisfies the following measurement formulas: Tx > Dx - Sx ; ? Tx < Dx - Sx + Wx ? 2 ; ? Tx > Sx ; ? Tx < Dx - Sx + Wx ? 1 ; wherein, Tx represents a searching distance for finding an end-point of the first portion or an end-point of the first part; and Sx represents an actual shifting amount of the first portion.

Abstract: The present invention is related to a method for treating and/or preventing Alzheimer's disease, especially using mitochondria for treatment and/or prevention of Alzheimer's disease.

Abstract: A method for automatic speech recognition using joint acoustic echo cancellation, speech enhancement, and voice separation includes receiving, at a contextual frontend processing model, input speech features corresponding to a target utterance. The method also includes receiving, at the contextual frontend processing model, at least one of a reference audio signal, a contextual noise signal including noise prior to the target utterance, or a speaker embedding including voice characteristics of a target speaker that spoke the target utterance. The method further includes processing, using the contextual frontend processing model, the input speech features and the at least one of the reference audio signal, the contextual noise signal, or the speaker embedding vector to generate enhanced speech features.

Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.