Abstract: The present disclosure provides a method for dehydrating a semiconductor structure, including providing a semiconductive substrate, forming a trench on the semiconductive substrate, dispensing an agent in liquid form into the trench, solidifying the agent, and dehydrating a surface in the trench by transforming the agent from solid form to vapor form.

Abstract: A method for drying a wafer is provided. The method includes providing or receiving the wafer and applying a rinsing liquid in a liquid state to the wafer. The rinsing liquid has a boiling point. The method also includes drying the wafer by applying a drying fluid in a gaseous state to the wafer. The drying fluid has a higher temperature than the boiling point of the rinsing liquid, and the rinsing liquid is evaporated and removed by the drying fluid. After the removal of the rinsing liquid, the drying fluid remains in a gaseous state.

Abstract: A computer device and a data protection method therefor are provided. The computer device includes an embedded controller, a data storage, and a power module. The embedded controller includes a general-purpose input-output port. The data storage is coupled to the embedded controller through the general-purpose input-output port. The power module is coupled to the embedded controller. The embedded controller detects whether an abnormal shutdown event occurs. When the abnormal shutdown event occurs, the embedded controller informs the data storage to perform a buffered data storage operation through the general-purpose input-output port, so as to transfer buffered data in the data storage to a non-volatile storage area in the data storage, and the embedded controller controls the power module to maintain power supply to the data storage in a predetermined time period.

Abstract: The present disclosure provides a dehydrating chemical for dehydrating a semiconductor substrate under an ambient temperature, including a first chemical having a melting point below the ambient temperature, and a second chemical having a melting point greater than the melting point of the first chemical, wherein the dehydrating chemical has a melting point less than the ambient temperature by predetermined ?T0 degrees, and at least one of the first chemical and the second chemical has a saturated vapor pressure greater than a predetermined pressure PSV under 1 atm.

Abstract: The present disclosure provides a semiconductor structure etching solution, including an etchant, an ionic strength enhancer having an ionic strength greater than 10?3 M in the semiconductor structure etching solution, and a solvent having a dielectric constant lower than a dielectric constant of water.

Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.

Abstract: The present disclosure provides a method for dehydrating a semiconductor structure, including providing a semiconductive substrate, forming a trench on the semiconductive substrate, dispensing an agent in liquid form into the trench, solidifying the agent, and dehydrating a surface in the trench by transforming the agent from solid form to vapor form.

Abstract: In a method of cleaning a substrate, a solution including a size-modification material is applied on a substrate, on which particles to be removed are disposed. Size-modified particles having larger size than the particles are generated, from the particles and the size-modification material. The size-modified particles are removed from the substrate.

Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.

Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.

Abstract: The present disclosure provides a method for dehydrating a semiconductor structure, including providing a semiconductive substrate, forming a trench on the semiconductive substrate, dispensing an agent in liquid form into the trench, solidifying the agent, and dehydrating a surface in the trench by transforming the agent from solid form to vapor form.

Abstract: In a method of cleaning a substrate, a solution including a size-modification material is applied on a substrate, on which particles to be removed are disposed. Size-modified particles having larger size than the particles are generated, from the particles and the size-modification material. The size-modified particles are removed from the substrate.

Abstract: A hard disk monitoring method and a hard disk monitoring system are provided. The hard disk monitoring method includes: determining whether a speaker outputs a sound source by using a host system; if the speaker outputs the sound source, determining whether a performance of the hard disk is lower than a threshold by using the host system; if the performance of the hard disk is lower than the threshold, adjusting the sound source signal of the sound source by using the host system. Therefore, the hard disk monitoring method and the hard disk monitoring system inspect the performance of the hard disk when the speaker outputs the sound source. If the performance of the hard disk drops, the volume outputted by the speaker is dynamically turned down to stop the performance drop of the hard disk caused by the vibration generated by the speaker outputting the sound source.

Abstract: The present disclosure provides a method for dehydrating a semiconductor structure, including providing a semiconductive substrate, forming a trench on the semiconductive substrate, dispensing an agent in liquid form into the trench, solidifying the agent, and dehydrating a surface in the trench by transforming the agent from solid form to vapor form.

Abstract: In a method of cleaning a substrate, a solution including a size-modification material is applied on a substrate, on which particles to be removed are disposed. Size-modified particles having larger size than the particles are generated, from the particles and the size-modification material. The size-modified particles are removed from the substrate.

Abstract: A computer device and a data protection method therefore are provided. The computer device includes an embedded controller, a data storage, and a power module. The embedded controller includes a general-purpose input-output port. The data storage is coupled to the embedded controller through the general-purpose input-output port. The power module is coupled to the embedded controller. The embedded controller detects whether an abnormal shutdown event occurs. When the abnormal shutdown event occurs, the embedded controller informs the data storage to perform a buffered data storage operation through the general-purpose input-output port, so as to transfer buffered data in the data storage to a non-volatile storage area in the data storage, and the embedded controller controls the power module to maintain power supply to the data storage in a predetermined time period.

Abstract: A method for drying a wafer is provided. The method includes providing or receiving the wafer and applying a rinsing liquid in a liquid state to the wafer. The rinsing liquid has a boiling point. The method also includes drying the wafer by applying a drying fluid in a gaseous state to the wafer. The drying fluid has a higher temperature than the boiling point of the rinsing liquid, and the rinsing liquid is evaporated and removed by the drying fluid. After the removal of the rinsing liquid, the drying fluid remains in a gaseous state.

Abstract: A method of solid precursor delivery for a vapor deposition process is provided. In some embodiments, a precursor ampoule is provided including a solid precursor arranged in the precursor ampoule. A solvent is added to the precursor ampoule including one or more ionic liquids to dissolve chemical species of the solid precursor and to form a liquid precursor. A carrier gas is applied into the liquid precursor through an inlet of the precursor ampoule. A gas precursor is generated at an upper region of the precursor ampoule by vaporization of the liquid precursor. The chemical species of the solid precursor are delivered into a vapor deposition chamber by the carrier gas. The chemical species of the solid precursor is deposited onto a substrate within the vapor deposition chamber.

Abstract: A method of solid precursor delivery for a vapor deposition process is provided. In some embodiments, a precursor ampoule is provided including a solid precursor arranged in the precursor ampoule. A solvent is added to the precursor ampoule including one or more ionic liquids to dissolve chemical species of the solid precursor and to form a liquid precursor. A carrier gas is applied into the liquid precursor through an inlet of the precursor ampoule. A gas precursor is generated at an upper region of the precursor ampoule by vaporization of the liquid precursor. The chemical species of the solid precursor are delivered into a vapor deposition chamber by the carrier gas. The chemical species of the solid precursor is deposited onto a substrate within the vapor deposition chamber.

Abstract: A hard disk monitoring method and a hard disk monitoring system are provided. The hard disk monitoring method includes: determining whether a speaker outputs a sound source by using a host system; if the speaker outputs the sound source, determining whether a performance of the hard disk is lower than a threshold by using the host system; if the performance of the hard disk is lower than the threshold, adjusting the sound source signal of the sound source by using the host system. Therefore, the hard disk monitoring method and the hard disk monitoring system inspect the performance of the hard disk when the speaker outputs the sound source. If the performance of the hard disk drops, the volume outputted by the speaker is dynamically turned down to stop the performance drop of the hard disk caused by the vibration generated by the speaker outputting the sound source.