Patents by Inventor Chung Chih Wang

Chung Chih Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6093228
    Abstract: A method and a device for collecting by-products individually, applied to the semiconductor manufacture factory, is disclosed. The device, adapted to be used to filter a fluid accompanied with an object, for retaining the object therein includes a body, an entrance provided on an upper portion of the body for enabling the fluid to flow into the body, a powder trap mounted in the body for filtering the fluid to retain the object therein, a guiding device mounted in the body for guiding the fluid to pass the powder trap, and an exit provided on a lower portion of the body for enabling the filtered fluid to flow out. The advantages of the present invention have: (a) preventing the by-products from being reacted with each other resulting in a fire; (b) preventing the low vacuum tube from being chocked by by-products; and (c) collecting the by-products individually.
    Type: Grant
    Filed: November 18, 1998
    Date of Patent: July 25, 2000
    Assignee: Winbond Electronics Corp.
    Inventor: Chung-Chih Wang
  • Patent number: 5946568
    Abstract: A solid state memory fabrication method of DRAM chips with a self-alignment of field plate/BL isolation process includes using oxide-poly-oxide etch followed by oxidation or sidewall deposition (LPTEOS) to isolate the field plate and BL. This process uses a first etchant and a second etchant in etching the BL/N.sup.+ contact in the fabrication process. During the etch of BL/N.sup.+ contact (2C etch), a low selectivity etchant etches away Ploy-3 first. This first etchant is applied for approximately one hundred eighty seconds. And then a second etchant process is performed using a high Si selectivity etchant, which etches a way the residual oxide. The second etchant is applied for approximately ninety seconds. The exposed poly on the sidewall is isolated from the contact hole by oxidation or deposition (LPTEOS). The oxide formed on the substrate during oxidation is etched away by anisotropic etch. The self-alignment of BL/3P is thus achieved.
    Type: Grant
    Filed: May 17, 1996
    Date of Patent: August 31, 1999
    Assignee: Mosel Vitelic, Inc.
    Inventors: Chia-Shun Hsiao, Wei-Jing Wen, Wen-Jeng Lin, Chung-Chih Wang