Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.

Abstract: An antenna apparatus, a communication apparatus, and a steering adjustment method thereof are provided. The antenna apparatus includes an antenna structure. The antenna structure includes an antenna unit. The antenna unit includes i feeding ports, where i is a positive integer larger than 2. A vector of each of the feeding ports is controlled independently. In the steering adjustment method, a designated direction is determined, where the designated direction corresponds to beam directionality of the antenna structure. In addition, the vectors of the feeding ports of the antenna unit are configured according to the designated direction. Accordingly, the antenna size can be reduced, and beam steering in multiple directions would be achieved.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members disposed over a substrate, a gate structure engaging the channel members, and an epitaxial feature adjacent the channel members. At least one of the channel members has an end portion in physical contact with an outer portion of the epitaxial feature. The end portion of the at least one of the channel members includes a first dopant of a first concentration. The outer portion of the epitaxial feature includes a second dopant of a second concentration. The first concentration is higher than the second concentration.

Abstract: The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.

Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.

Abstract: A fluorene-based copolymer of formula I includes a monomeric unit that includes a fluorene group and at least one steric hindering chemical group to provide sufficient steric interaction such that the spatial conformation of the fluorene-based copolymer is substantially non-planar. The fluorene-based copolymer exhibits UV light emission.

Abstract: The present invention is a apparatus of multi-unit modular stackable switched reluctance motor system with parallely excited low reluctance circumferential magnetic flux loops for high torque density generation. For maximized benefits and advanced motor features, the present invention takes full combined advantages of both SRM architecture and “Axial Flux” architecture by applying “Axial Flux” architecture into SRM design without using any permanent magnet, by modularizing and stacking the “Axial Flux” SRM design for easy configuration and customization to satisfy various drive torque requirements and broad applications, and by incorporating an en energy recovery transformer for minimizing switching circuitry thus further lowering the cost and further increasing the reliability and robustness. Unlike prior arts, the present invention does not use any permanent magnet and this “Axial Flux” SRM system is modularized and stackable with many benefits.

Abstract: A fluorene-based copolymer of formula I includes a monomeric unit that includes a fluorene group and at least one steric hindering chemical group to provide sufficient steric interaction such that the spatial conformation of the fluorene-based copolymer is substantially non-planar. The fluorene-based copolymer exhibits UV light emission.

Abstract: The present invention is drawn to a layered organic device, and a method of forming the same. The method includes steps of applying a first solvent-containing organic layer to a substrate and removing solvent from the first solvent-containing organic layer to form a first solidified organic layer. Additional steps include applying a second solvent-containing organic layer to the first solidified organic layer and removing solvent from the second solvent-containing organic layer to form a second solidified organic layer. The first solidified organic layer can be crosslinked, which suppresses negative impact to components in the first solidified organic layer when the solvent of the second solvent-containing organic layer is deposited on the first solidified organic layer.

Abstract: The present invention is drawn to a layered organic device, and a method of forming the same. The method includes steps of applying a first solvent-containing organic layer to a substrate and removing solvent from the first solvent-containing organic layer to form a first solidified organic layer. Additional steps include applying a second solvent-containing organic layer to the first solidified organic layer and removing solvent from the second solvent-containing organic layer to form a second solidified organic layer. The first solidified organic layer can be crosslinked, which suppresses negative impact to components in the first solidified organic layer when the solvent of the second solvent-containing organic layer is deposited on the first solidified organic layer.

Abstract: A system and method of capturing a skin print from skin having ridges and valleys. A skin print sensor having a return/supply contact and a plurality of contact pads is provided. A finger is applied to the skin print sensor and data is stored representative of contact pads in contact with skin ridges.

Abstract: An assembly for depositing material onto a substrate includes a reservoir containing the material. The reservoir also includes a nozzle through which the material is jetted and formed into droplets. The droplets travel through flight paths prior to deposition onto the substrate. The assembly includes a charging ring for inducing an electrical charge to one or more of the droplets and a plurality of deflection plates for controlling the flight paths of the droplets. In addition, the assembly also includes a droplet manipulating device configured to manipulate the droplets at least one of during the flight paths and after deposition of the droplets onto the substrate.

Abstract: An ultra-high-density data storage device that relies on optical signals. The device includes a luminescent layer that emits light when stimulated by an electron beam. The device also includes a phase-change layer that contains data bits that may absorb or reflect the stimulated light before the light reaches a detector. Also, a method of data storage and retrieval that includes writing data bits in the phase-change layer, stimulating emissions in the luminescent layer, and reading data bits by monitoring the amount of light that reaches the detector.

Abstract: A microelectromechanical system includes a first wafer, a second wafer including a moveable portion, and a third wafer. The movable portion is movable between the first wafer and the third wafer. The first wafer, the second wafer, and the third wafer are bonded together.

Abstract: Ultra-high-density data-storage media employing indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide films to form bit-storage regions that act as photoconductive, photovoltaic, or photoluminescent semiconductor devices that produce electrical signals when exposed to electromagnetic radiation, or to form bit-storage regions that act as cathodoconductive, cathodovoltaic, or cathodoluminescent semiconductor devices that produce electrical signals when exposed to electron beams. Two values of a bit are represented by two solid phases of the data-storage medium, a crystalline phase and an amorphous phase, with transition between the two phases effected by heating the bit storage region.

Abstract: A microelectromechanical system includes a first wafer, a second wafer including a moveable portion, and a third wafer. The movable portion is movable between the first wafer and the third wafer. The first wafer, the second wafer, and the third wafer are bonded together.

Abstract: An ultra-high-density data storage device that relies on optical signals. The device includes a luminescent layer that emits light when stimulated by an electron beam. The device also includes a phase-change layer that contains data bits that may absorb or reflect the stimulated light before the light reaches a detector. Also, a method of data storage and retrieval that includes writing data bits in the phase-change layer, stimulating emissions in the luminescent layer, and reading data bits by monitoring the amount of light that reaches the detector.

Abstract: A device isolation process flow for an atomic resolution storage (ARS) system inserts device isolation into a process flow of the ARS system so that diodes may be electrically insulated from one another to improve signal to noise ratio. In addition, since most harsh processing is done prior to depositing a phase change layer, which stores data bits, process damage to the phase change layer may be minimized.

Abstract: A device isolation process flow for an atomic resolution storage (ARS) system inserts device isolation into a process flow of the ARS system so that diodes may be electrically insulated from one another to improve signal to noise ratio. In addition, since most harsh processing is done prior to depositing a phase change layer, which stores data bits, process damage to the phase change layer may be minimized.

Abstract: A device isolation process flow for an atomic resolution storage (ARS) system inserts device isolation into a process flow of the ARS system so that diodes may be electrically insulated from one another to improve signal to noise ratio. In addition, since most harsh processing is done prior to depositing a phase change layer, which stores data bits, process damage to the phase change layer may be minimized.